Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-µm Optical-Fiber Band (original) (raw)
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Applied Physics Letters, 2012
Quantum dots as single-photon sources have several advantages, such as emitting light over a broad spectral range and being photostable. Quantum dots with densities as low as 1 dot/µm 2 have been achieved using ultra-low-rate epitaxy and single-dot emission measured without apertures or post-growth processing.
New optical fiber based spectroscopic tools open the possibility to develop more robust and efficient characterization experiments. Spectral filtering and light reflection have been used to produce compact and versatile fiber based optical cavities and sensors. Moreover, these technologies would be also suitable to study N-photon correlations, where high collection efficiency and frequency tunability is desirable. We demonstrated single photon emission of a single quantum dot emitting at 1300 nm, using a Fiber Bragg Grating for wavelength filtering and InGaAs Avalanche Photodiodes operated in Geiger mode for single photon detection. As we do not observe any significant fine structure splitting for the neutral exciton transition within our spectral resolution (46 μeV), metamorphic QD single photon emission studied with our all-fiber Hanbury Brown & Twiss interferometer could lead to a more efficient analysis of entangled photon sources at telecom wavelength. This all-optical fiber scheme opens the door to new first and second order interferometers to study photon indistinguishability, entangled photon and photon cross correlation in the more interesting telecom wavelengths. New emerging quantum optics technologies are mostly influenced by the possibility to design realistic proposals to implement and control quantum correlations between photons 1. Single photon and entangled photon emission has been demonstrated by different techniques and systems 2 , as for example by non-linear processes (parametric down conversion or four wave mixing) or by two level systems (atoms, molecules, Quantum Dots, single impurities or Nitrogen Vacancies in Diamond). However, an entangled photon source must fulfill several requirements for its use in quantum applications 3 : deterministic generation of entangled photons, high fidelity to the Bell state, high photon indistinguishability, and high efficiency. Although non-linear processes generate entangled photons at room temperature, two-level systems offer the opportunity to build a deterministic device, i.e., a system where entangled photons are emitted on demand by an external control (laser pulse or electrical signal). Furthermore, it is interesting to generate entangled photon emission compatible with optical fiber technologies, thus it is necessary to tune the optical emission to the second and third optical telecommunication windows (1300 and 1550 nm). In this regard, single self-assembled Quantum Dots (SAQDs) are well known solid-state semiconductor nano-structures that offer key advantages as single or entangled photon emitters fabricated on a GaAs substrate. SAQDs show confinement in all dimensions, leading to a 0-dimensional density of states similar to single atoms. The optical emission in the biexciton to neutral exciton cascade has been proposed as a deterministic polarization entangled photon source 4. Along the last decade, single SAQDs have been used to develop single 5 and entangled photon emitting diodes as sources of high fidelity Bell states 6. Single charge states have been controlled in order to manipulate hole spins with very large decoherence times 7 , which is a desirable property in the development of future quantum computing devices. High values of photon indistinguishability have also been obtained in two photon
Optical characteristics of single InAs∕InGaAsP∕InP(100) quantum dots emitting at 1.55 μm
Applied Physics Letters, 2006
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperaturedependent measurements reveal negligible optical-phonon induced broadening of the exciton line up to 50 K, and emission from the exciton state clearly persists above 70 K. Furthermore, we find no measurable polarized fine structure splitting of the exciton state within the experimental precision. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems.
Single InAs1-xPx/InP quantum dots as telecommunications-band photon sources
Physical Review B, 2011
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 mu\mumum), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 mu\mumum), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multi-exciton states. Single photon emission is reported for the dots emitting at 1.3 mu\mumum through anti-bunching measurements.
Single-photon generation with InAs quantum dots
New Journal of Physics, 2004
Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed. 14 Acknowledgments 15 References 15
Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range
Applied Physics Letters, 2012
We report on site-controlled growth of InP/GaInP quantum dots (QDs) on GaAs substrates. The QD nucleation sites are defined by shallow nanoholes etched into a GaInP layer. Optimized growth conditions allow us to realize QD arrays with excellent long range ordering on nanohole periods as large as 1.25 µm. Single QD lines with an average linewidth of 553 µeV and best values below 200 µeV are observed. Photoluminescence spectroscopy reveals excitonic and biexcitonic emission in the wavelength range of about 670 nm (1.85 eV) with an excitonbiexciton splitting of 1.8 meV. Second-order photon-autocorrelation measurements show clear single photon emission with g (2) (0)=0.13±0.01.
A quantum dot single photon source
2001
We demonstrate heralded single photon emission from a self-assembled InAs quantum dot (QD). Pulsed optical excitation (82 MHz) together with Coulomb renormalization effects allows for the realization of regular single photon emission at the excitonic transiton (1X) with nearly 100% efficiency. By temperature tuning, we are able to shift the 1X transition into resonance with a whispering gallery mode of a microdisk (Q∼ 6500) and achieve turnstile operation of the coupled QD-cavity system.
InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm
Nanotechnology, 2009
We demonstrate an optimized molecular beam epitaxial growth procedure of InAs quantum dots (QDs) capped by a low nitrogen-content GaInAs(N) quantum well to obtain single QD emission at telecommunication wavelengths. Technical separation of the nitrogen radio frequency plasma source to a second chamber does allow formation of InAs QDs without nitrogen incorporation. Thereby, optical quality degradation is avoided and by additional careful separation of the GaInAsN cap from the InAs QD layer with a partial GaInAs cap of nominal 4 nm thickness we achieve comparatively bright single dot emission above 1300 nm at 8K. Micro-photoluminescence spectroscopy on single QDs reveal excitonic and biexcitonic emission at 939.8 meV (~1.319 µm) and 934.6 meV (~1.327 µm), respectively. Hence, InAs/GaAs(N) QDs can be considered as to be a promising system for the use as single photon sources emitting in the 1.3 µm telecommunication band with prospects for an extension to even longer wavelength.