Micro-Raman and field emission studies of silicon nanowires prepared by metal assisted chemical etching (original) (raw)
Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned vertical SiNWs. Raman shift and size relation from bond-polarizability model has been used to calculate exact confinement sizes in SiNWs. The Si optical phonon peak for SiNWs showed a downshift and an asymmetric broadening with decreasing diameter of the SiNWs due to quantum connement of optical phonons. The field emission characteristics of these SiNWs are studied based by carrying out currentvoltage measurements followed by a theoretical analysis using FowlerNordheim equation. The electron field emission increased with decreasing diameter of SiNWs. Field emission from these SiNWs exhibits signicant enhancement in turn-on eld and total emission current with decreasing nanowire size. The reported results in the current study indicate that MACE is a simple technique to prepare well-aligned SiNWs with potentials for applications in field emission devices.
Loading Preview
Sorry, preview is currently unavailable. You can download the paper by clicking the button above.