Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes (original) (raw)

The introduction of a low-temperature-grown (LTG) GaN cap layer on GaN Schottky barrier diodes (SBDs) significantly reduces reverse-bias leakage current, achieving a reduction factor of 3-4. The LTG GaN layer effectively blocks leakage paths associated with threading dislocations, leading to improved performance characterized by a homogeneous spatial distribution of current. Experimental results show that the LTG GaN cap layer mitigates surface defects, enhancing the overall stability and efficiency of GaN-based electronic devices.