Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film (original) (raw)
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Properties Enhancement of Electrodeposit-n-Cu2O Thin Film by Annealing Treatment
The report is on analysis of the n-type cuprous oxide (n-Cu 2 O) thin film toward the effect of annealing duration. The n-Cu 2 O material is firstly accumulated on the glass substrate of fluorine-doped tin oxide (FTO) by approach of electrodeposition with deposition time of 30 minutes, with a 60°C of solution temperature and pH 6.5. The n-Cu 2 O sample is then undergoes an annealing treatment with duration ranged from 40 till 70 minutes with an 200ºCofannealing temperature. Next, effective properties of structural, morphology, topology, optical, electrical and photoelectrochemical of annealed n-Cu 2 O thin film were evaluate against the related instrument. From the characterization finding, 50 minutes possess to be the most suitable annealing time. With the implementation treatment of annealing, the n-Cu 2 O thin films properties were significantly enhanced. .
The Effect of Annealing Treatment on n-Cu2O Thin Film for Homostructure Application
This experiment is about fabrication of homojunction (n-type and p-type) based cuprous oxide (Cu 2 O) thin film by using electrodeposition method. The Cu 2 O thin film were deposited on fluorine doped tin oxide (FTO) substrates by using copper acetate based solution through potentiostatic electrodeposition method. The n-type Cu 2 O was fabricated at pH 6.3 with a fixed potential of-0.125V vs. Ag/AgCl and time deposition at 30 minutes. While, for p-type Cu 2 O was fabricated at pH 12.5 with fixed potential obtained from cyclic voltammetry measurement of-0.30V vs. Ag/AgCl for 2 hours. Annealing treatment was introduced to enhance the properties of the homostructure thin films. The quality of Cu 2 O thin film were studied and varied in term of annealing temperature and duration. Structural, morphological, optical and electrical properties were characterized using X-Ray Diffractometer (XRD), Field Emission Scanning Electron Microscopy (FE-SEM), Ultraviolet-visible Spectroscopy (UV-Vis) and Four Point Probe, respectively. Lastly, photoelectrochemical cell (PEC) measurement was studied to confirm the conduction type of each thin film and their photoresponse between as-deposited and annealed sample.
Structural and annealing studies of potentiostatically deposited Cu2O thin films
Solar Energy Materials and Solar Cells, 2005
Cuprous oxide (Cu 2 O) thin films were deposited on Cu and tin oxide coated glass substrates through potentiostatic electrodeposition. The optimum range of deposition parameters was experimentally investigated. X-ray diffraction studies revealed the formation of single-phase cubic Cu 2 O films in the deposition potential range from À0.355 to À0.555 V versus SCE. Studies revealed that an optimum pH of 9.0 yielded single-phase cubic films with improved crystallinity. The preferential orientation of (2 0 0) cubic Cu 2 O peak was found to increase with bath temperature in the range 30-70 1C. The effects of annealing on the preferred orientation, grain size and optical band gap were studied. The energy conversion efficiencies of as-deposited and annealed p-Cu 2 O films as photocathodes in photoelectrochemical (PEC) solar cells were studied and the results were discussed. r
physica status solidi (b), 2015
The n-type and p-type cuprous oxide thin films were electrodeposited potentiostatically in acetate and lactate baths, respectively. Sulfur treatment of n-type and p-type cuprous oxide surfaces were achieved using gaseous (NH 4) 2 S. Sulfurtreated Cu 2 O films were annealed in air at 100, 150, 200, 250, 350, and 450 8C for unique times to obtain the best photocurrent. Unannealed and annealed samples of sulfurtreated and untreated cuprous oxide were then investigated using high-energy X-ray diffraction (HEXRD). The HEXRD measurements and the pair distribution function (PDF) analysis revealed that the sulfur treatment leads to the formation of crystalline CuS on Cu 2 O film surfaces. The present study also shows that the sulfur treatment causes minor structural changes in Cu 2 O samples due to the formation of CuS. It was observed that the sulfur-treated cuprous oxide samples retarded the formation of CuO at higher temperatures showing good thermal stability and enhancement of the photoactivity of the n-type and p-type cuprous oxides. ß 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim K. M. D. C. Jayathilaka et al.: Annealing effects of untreated and sulfur-treated Cu 2 O thin films
Preparation and microstructural studies of electrodeposited Cu2O thin films
Materials Letters, 2004
Cuprous oxide (Cu 2 O) thin films have been synthesised potentiostatically on Cu and tin oxide-coated substrates at various bath temperatures. X-ray diffraction studies showed the deposition of single-phase cubic Cu 2 O film with improved crystallinity at the optimum deposition parameter conditions. X-ray line profile analyses are carried out on Cu 2 O films and microstructural parameters are evaluated. The variations of microstructural parameters with deposition and annealing conditions are studied.
Nanoscale Research Letters, 2014
Cuprous oxide (Cu 2 O) thin films were prepared by using electrodeposition technique at different applied potentials (−0.1, −0.3, −0.5, −0.7, and −0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.
Potentiostatic Electrodeposition of Cuprous Oxide Thin Films for Photovoltaic Applications
Electrochimica Acta, 2011
"Potentiostatic deposition of Cu2O thin films on glass substrates coated with F-doped SnO2 from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu2O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu2O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu2O/AZO structure were fabricated by sputtering an AZO film onto the Cu2O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu2O film deposited at -0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu2O film than those of the Cu2O films deposited at other potentials. Key Words: electrodeposition, Cu2O, potentiostatic regime, Al-doped ZnO, heterojunction"
Journal of Nanomaterials
The transition metal oxide-based nanomaterial attracted researchers for its various applications due to its interesting physical, chemical, and optical properties. Copper oxide thin films with different oxidation states were prepared on various transparent, nontransparent nature conducting substrates from the acidic and alkaline medium by electrodeposition technique. The deposition parameters such as potential, bath temperature, solution pH, and deposition time determine the physical, chemical, and optical properties. The complexing agents such as sodium thiosulfate, lactic acid, citric acid, and triethanolamine determine the stability of cuprous and cupric ions in the deposited films. Optical properties reported that the deposited films have direct band gap value 1.3 and 3.7 eV represents the absorbance of the deposited films in the visible region of solar spectrum. The absorbance of light in visible region, good electrical conductivity, and various nanostructure morphologies with ...
Applied Physics A, 2007
This work demonstrates the electrodeposition of cuprous oxide (Cu 2 O) thin films onto a fluorine-doped tin oxide (FTO)-coated conducting glass substrates from Cu(II) sulfate solution with C 6 H 8 O 7 chelating agent. During cyclic voltammetry experiences, the potential interval where the electrodeposition of Cu 2 O is carried out was established. The thin films were obtained potentiostatically and were characterized through different techniques. From the Mott-Schottky measurements, the flat-band potential and the acceptor density for the Cu 2 O thin films are determined. All the films showed a p-type semiconductor character with a carrier density varying between 2.41 × 10 18 cm −3 and 5.38 × 10 18 cm −3 . This little difference is attributed to the increase of the stoichiometric defects in the films with the deposition potential. Atomic force microscopy analysis showed that the Cu 2 O thin films obtained at high potential are more homogenous in appearance and present lower crystallites size. X-ray diffraction measurements indicate a cubic structure with good crystallization state and the deposition potential was found to have an influence on the size of the crystallites. The optical measurements show a direct band gap between 2.07-2.49 eV depending on the applied potential.
Study of annealing effects of cuprous oxide grown by electrodeposition technique
Solar Energy Materials and Solar Cells, 1996
Low temperature electrochemical deposition of cuprous oxide from aqueous solutions has been investigated. X-ray diffraction, scanning electron microscopy, optical absorption, and photo-response of liquid/cuprous oxide junctions have been used to study the deposits' crystallographic, morphological, optical, and electrical properties. Effects of annealing in air have been studied using the above mentioned methods. As-deposited cuprous oxide exhibits a direct band gap of 2.0 eV, and shows an n-type behaviour when used in an liquid/solid junction. Annealing below 300°C enhances the n-type photocurrent produced by the junction. Type conversion occurs after heat treatments in air at temperatures above 300°C. No apparent bulk structure changes have been observed during annealing below this temperature, but heat treatments above this temperature produce darker films containing cupric oxide and its complexes with water.