Inhibition of In desorption in diluted nitride InAsN quantum dots (original) (raw)

Applied Physics Letters, 2011

Abstract

The effect of low N-alloying on the structure of capped InAs/GaAs quantum dots is analyzed by transmission electron microscopy related techniques. A statistical study of interplanar distances in InAsN quantum dots shows an increase in the lattice parameter compared to the InAs case. We suggest that the addition of nitrogen blocks the Ga/In exchange processes during the quantum dot capping

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