Optically active Er3+ ions in SiO2 codoped with Si nanoclusters (original) (raw)
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Optically active Er[sup 3+] ions in SiO[sub 2] codoped with Si nanoclusters
Journal of Applied Physics, 2009
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Si nanoclusters coupled to Er3+ ions in a SiO2 matrix for optical amplifiers
Optical Materials, 2011
In this work we will give an overview of the optical properties of Si nanoclusters coupled to Er 3+ ions in SiO 2 matrices produced by reactive magnetron co-sputtering. We have divided the work into two separate studies realised on the same samples, which are the result of a thorough optimisation work. The first one have been realised in order to get a clear picture of the interaction mechanism. On the second we will show a quantitative evaluation of the potential performances from a material point of view (determination of the whole optically active Er 3+ content, excitable by direct or indirect means) and actual performance in a waveguide device (determination of internal gain values).
Physics of the Solid State, 2005
The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO 2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er 3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er 3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO 2 structures. The Er 3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er 3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO 2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 µ m.
On optical activity of Er[sup 3+] ions in Si-rich SiO[sub 2] waveguides
Applied Physics Letters, 2006
Photoluminescence spectroscopy was used to explore the optical activity of Er 3+ ions in Si-rich SiO 2 waveguides prepared by ion implantation. Measurements were performed for a series of materials characterized by different Si excess levels, Er concentrations, and annealing temperatures. The highest fraction of optically active Er 3+ ions which can be efficiently activated by nonresonant pumping was found to be 2.6%. This was realized in a waveguide with an Er concentration of ͓Er͔ =10 18 cm −3 and Si excess of 20%, annealed at 900°C. This optical activity level is insufficient to realize optical gain. It is therefore clear that further material improvement is needed before optical amplification in SiO 2 : Er matrices sensitized by Si nanocrystals/nanoclusters can be achieved.
Nanoscale research letters, 2014
The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si NCs to LCs. Optimum Er(3+) PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists.
Applied Physics Letters, 2001
The exciton-erbium coupling and the excitation dynamics of Er 3ϩ in erbium-doped silicon-rich silicon oxide are investigated using time-resolved measurements of Er 3ϩ luminescence. The dependence of the Er 3ϩ luminescence on the pump power and duration indicates that the excitonerbium coupling is dominant over carrier-exciton coupling. The results further support the idea that the luminescent Er 3ϩ ions are not in the Si nanoclusters but in the interface region surrounding the nanoclusters.
Maximum fraction of Er3+ ions optically pumped through Si nanoclusters
Journal of Luminescence, 2006
By quantifying the amount of excited Er ions and considering the interaction distance between Si nanoclusters (Si-ncs) and the nearby Er ions, we were able to determine the maximum excitable Er concentration, when indirectly pumped through the Si-ncs. Our study was carried out on silica layers codoped with Si clusters and Er ions, grown by reactive magnetron sputtering. Si-rich silica layers were formed with different amounts of Si excess and doped to a wide range of Er concentrations. Thermal treatments were performed at 900 1C for different durations to maximize the Er emission at 1540 nm. The saturation limit of Er ions optically excitable through the Si-ncs was found about 3% of the total concentration. Simulations were carried out in order to explain this low value. The modelization takes into account the spatial distribution of the Er population, the measured size and density of Si clusters and the short-range character of the interaction between Er and Si-ncs. The small excitable fraction thus obtained appears as the ultimate intrinsic limitation to attain very high optical efficiency in such structures. r
2011
We present a study on erbium (Er)-doped silicon (Si)-rich silicon oxide thin films grown by the magnetron cosputtering of three confocal cathodes according to the deposition temperature and the annealing treatment. It is shown that, through a careful tuning of both deposition and annealing temperatures, it is possible to engineer the fraction of agglomerated Si that may play the role of sensitizer toward Er ions. To investigate the different emitting centers present within the films according to the fraction of agglomerated Si, a cathodoluminescence experiment was made. We observe in all samples contributions from point-defect centers due to some oxygen vacancies and generally known as silicon-oxygen deficient centers (SiODC), at around 450-500 nm. The behavior of such contributions suggests the possible occurrence of an energy transfer from the SiODCs toward Er 3+ ions. Photoluminescence experiments were carried out to characterize the energy transfer from Si nanoclusters toward Er 3+ ions with a nonresonant wavelength (476 nm) that is unable to excite SiODCs and then exclude any role of these centers in the energy transfer process for the PL experiments. Accordingly, it is shown that structural differences have some effects on the optical properties that lead to better performance for hightemperature deposited material. This aspect is illustrated by the Er-PL efficiency that is found higher for 500 • C-deposited, when compared to that for RT-deposited sample. Finally, it is shown that the Er-PL efficiency is gradually increasing as a function of the fraction of agglomerated silicon. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). to 128.148.54.68. Terms of Use: http://spiedl.org/terms Cueff et al.: Cathodoluminescence and photoluminescence comparative study of Er-doped Si-rich silicon oxide