Engineering the Properties of Indium Sulfide for Thin Film Solar Cells by Doping (original) (raw)
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Indium sulfide thin films as window layer in chemically deposited solar cells
Thin Solid Films, 2014
Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10 −3 -10 −7 (Ω cm) −1 , depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .
International Journal of Sciences: Basic and Applied Research (IJSBAR)
Abstract: In the present study the optical properties of indium sulphide thin films deposited by vacuum thermal evaporation method at different substrate temperature are investigated. Before being optically characterized, the compositions as well as the crystalline properties of the film have been checked with the help of Energy Dispersive Spectroscopy (EDX), X-Ray Diffraction (XRD) analyses and Atomic Force Microscopy (AFM). The optical absorption coefficient α has been deduced from reflectivity R (λ) and transmission T (λ) measurements over the wavelength range 300-1800 nm. The direct band gap is about 2.02 eV for layers deposited at 240°C. The refractive index and extinction coefficient are dependent on substrate temperature. The static refractive index n (), the oscillation energy E0 and the dispersion energy Ed are calculated using the theoretical Wemple-Didomenico model. It was found that the refractive index dispersion data obeyed the single oscillator of this model, from wh...
In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction solar cells. Although having a bandgap of 2.0 eV relative to 2.5 eV for CdS, the lower toxicity and environmental impact of indium relative to cadmium, and significant photosensitivity, compel ongoing research [1]. Indium sulfide thin films were deposited onto molybdenum-coated glass (SiO 2 ) substrates by electrodeposition from organic baths (ethylene glycolbased) containing indium chloride (InCl 3 ), sodium chloride (NaCl), and sodium thiosulfate (Na 2 S 2 O 3 .5H 2 O), the latter used as an additional sulfur source along with elemental sulfur (S). The Taguchi method was used to optimize the deposition paramters so as to minimize non-uniformity, cracks, and improper stoichiometry. The measured performance characteristics (molar ratio (In:S) and crack density) for all of the In 2 S 3 films were calculated to analyze the effect of each deposition factor (deposition voltage, deposition temperature, composition of solution, and deposition time) involved in the electrodeposition process by calculating the sensitivity (signal to noise, S/N, ratios).
Nano-Granular Indium Sulfide Layers for Thin Film Solar Cells
2006
Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz and glass substrates kept at TS = 220–240 °C during the deposition process. High transmit-tance of the nano-granular indium sulfide films in the visible region has been observed. Cor-relations between optical properties and morphology of film samples with various thickness have been investigated. Modification of the form and short-wavelength shift of the band edge occur simultaneously upon decreasing of the film thickness from 800 nm up to 30 nm, and the involved mechanisms have been explained. The results indicate that the former effects are assigned to multicomponent composition of the investigated films and that the obtained nano-granular thin films might be proposed as low-cost buffer materials for high-efficient thin-film solar cells with chalcopyrite absorber layers.
In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction solar cells. Although having a bandgap of 2.0 eV relative to 2.5 eV for CdS, the lower toxicity and environmental impact of indium relative to cadmium, and significant photosensitivity, compel ongoing research [1]. Indium sulfide thin films were deposited onto molybdenum-coated glass (SiO 2) substrates by electrodeposition from organic baths (ethylene glycol-based) containing indium chloride (InCl 3), sodium chloride (NaCl), and sodium thiosulfate (Na 2 S 2 O 3 .5H 2 O), the latter used as an additional sulfur source along with elemental sulfur (S). The Taguchi method was used to optimize the deposition paramters so as to minimize non-uniformity, cracks, and improper stoichiometry. The measured performance characteristics (molar ratio (In:S) and crack density) for all of the In 2 S 3 films were calculated to analyze the effect of each deposition factor (deposition voltage, deposition temperature, composition of solution, and deposition time) involved in the electrodeposition process by calculating the sensitivity (signal to noise, S/N, ratios).
Materials Sciences and Applications, 2012
The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfide oxide thin film was annealed in sulphure atmosphere for 60 min at 150˚C and 300˚C. The impact of the annealing process on the composition, crystal structure, and surface morphology of the thin film was investigated. In addition, superstrate heterojunction solar cells based on the annealed film as a buffer layer and tin sulphide as an active layer were fabricated and characterized. They showed diode-like behavior under dark condition and a relatively small photovoltaic effect under AM1.5 illumination condition.
Morphological and compositional analysis of electrodeposited indium (III) sulfide (In2S3) films
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014
Within the last few years, there has been notable progress in understanding the growth mechanisms of semiconductor thin films for photovoltaic (PV) applications. Electrodeposition continues to be a complex deposition technique that can lead to regions of low quality (for example, cracks) in films. Such cracks can form porous zones on the substrate and diminish the heterojunction interface quality of a PV cell. In this paper, electrodeposition of In 2 S 3 films was systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time, and deposition temperature. Their effects upon the morphology, composition, and film growth mechanism were studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and digital imaging analysis (using fracture and buckling analysis software). In addition, the effect of different annealing treatments (200 • C, 300 • C, and 400 • C in air) and coated glass-substrates (Mo, ITO, and FTO) upon the properties of the In 2 S 3 films was analyzed. Furthermore, the Taguchi/Design of Experiments (DOE) Method was used to determine the optimal electrodeposition parameters in order to improve the properties. 11 12 13 14 15 16 17 18 19 20
Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique
The Open Condensed Matter Physics Journal, 2009
Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3 ) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl 3 ) and indium nitrate (In(NO 3 ) 3 ) and post deposition annealing were also studied. Films fabricated with In(NO 3 ) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions.
ELSEVIER, 2015
Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was briefly reviewed. In2S3 has emerged as a promising low-hazard buffer (or window) material, and has proven to improve the properties of the solar cells, while reducing toxicity. Various deposition techniques have been employed to synthesize In2S3 films on different types of substrates. Until now, atomic layer deposition (ALD) and ionic layer gas atomic reaction (ILGAR) techniques have been the two most successful, yielding maximum energy conversion efficiencies up to 16.4% and 16.1%, respectively. The impact of varied deposition parameters upon the In2S3 film properties and performance of cadmium (Cd)-free solar cells has been outlined. A comparative/operational analysis (solar cell efficiencies above 9% reported for cell area ≤ 1cm2) of various buffer layers used in two primary types of TFSC technology: chalcopyrite (CIS/CIGS)- and CdTe-based solar cells was also performed to measure the progress of In2S3 compared to its counterparts.