Midinfrared photoluminescence from IV–VI semiconductors grown on silicon (original) (raw)
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HOMOGENEITY RANGE AND NONSTOICHIOMETRIC DEFECTS IN IV-VI NARROW-GAP SEMICONDUCTORS
Enthalpies of Schottky defect formation in narrow-gap Pb1-x S n xTe (x = 0, 0.2) and Pb093Sn007Se solid solutions have been determined. Low values of the enthalpies (HvM = 0.45 eV, H v C h = 0.70 eV) define high values of vacancy concentrations at T = 800 K. in the metallic and chalcogen sublattice (N M = 5 x l 0 1 9 cm-3 , /NCh = 1018 cm-3), which practically prevents a reproducible manufacturing of layers of these semiconductors with free carrier concentrations less than 3 x l 0 16 cm-3 .
Properties of II–VI semiconductors associated with moving dislocations
Advances in Physics, 1986
Moving dislocations in II-VI semiconductors carry a large electric charge. This charge is not in thermal equilibrium, but is due to the sweeping up of electrons from point defects. Its movement produces a dislocation current during plastic deformation, and conversely, the application of an external field changes the flow stress. This paper reviews the structure and properties of these dislocations, the theory of their charge and the phenomena which are a consequence of the strong mutual interactions of the dislocation and electronic subsystems in these crystals. The materials show a large photoplastic effect (a change in flow stress under illumination), and related effects due to the injection of electrons at an electrode. Deformation produces reversible changes in the conductivity, pulsed and continuous luminescence and the emission of electrons from the surface. Contents Yu. A. Osip'yan et al. 6.3. Dynamic equilibrium between dislocations and electrons 145 6.4. Comparison of the dynamic equilibrium model with experiment 149 7. Dislocation motion 151 7.1. Flow stress 151 7.2. Technique of dislocation currents 151 7.3. Models of dislocation motion 156 8. The photoplastic effect 158 8.1. Observations on single crystals in basal slip 160 8.1.1. Basic features of the photoplastic effect 160 8.1.2. Infrared quenching of the photoplastic effect 161 8.1.3. Photoplastic after-effect 163 8.2. Photoplastic effect for prismatic slip in wurtzite structure 164 8.3. Photoplastic effects in CdTe 164 8.4. Cathodoplastic effect 166 8.5. The nature of the photoplastic effect 166 8.5.1. Positive photoplastic effect 166 8.5.2. Negative photoplastic effect 168 9. The injection-plastic effect 169 10. Reversible excitation of electronic subsystem by moving dislocations 171 10.1.
Acta Metallurgica, 1989
Strain localization at near-lattice-mismatched (100) semiconductor heterojunctions results in the formation of dislocations due to plastic deformation of the epilayer at low temperatures. A geometric model for this deformation has bee.n presented which predicts the main features of these dislocation arrays at the heterojunction. In a full analysis of these dislocations. both the dissociated nature of the dislocations and their a//J character must be taken into account. The model has been tested by analyzing the arrangement and character of dislocations present in (Ga, ln)As/GaAs and (Ga. In)P/GaAs heterostructures. It is shown that the dislocations geometries differ significantly depending on whether the epilayer was in tension or compression during growth.
Thermal and nonthermal melting of III-V compound semiconductors
Physical Review B, 2019
We study theoretically the response of group III-V compound semiconductors (AlAs, AlP, GaAs, GaP, GaSb) to free-electron laser irradiation, identifying their damage thresholds. The employed hybrid code XTANT is capable of modeling both thermal and nonthermal effects under ultrafast electronic excitation. It allowed us to reveal common trends in the studied materials: all but the AlAs III-V compounds studied here exhibit a phase transition into a metallic disordered state of lower density than the solid phase via a thermal phase transition. This transition is instigated by electron-ion coupling at doses below the nonthermal melting. Irradiated AlAs showed two possible phases produced: low-density and high-density liquid. We demonstrate that the transferrable tightbinding method within the Born-Oppenheimer approximation significantly overestimates the damage threshold predicting only nonthermal melting in comparison to a non-Born-Oppenheimer scheme, which accounts for both effects and their interplay.
Damage buildup and recovery in III–V compound semiconductors at low temperatures
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2005
Results are presented of the RBS/channeling study of the structural defect behavior in ion bombarded In x Ga 1Àx As y P 1Ày (0 6 x, y 6 1) compounds at temperatures ranging from 15 K (LT) to 300 K (RT). Experiments consisted of implantation with different ions to fluences ranging from 4 · 10 13 to 5 · 10 15 at./cm 2 at different temperatures followed by in situ RBS/channeling measurements. Successive measurements of LT implanted samples were performed during warming up to RT.
The Role of Defects in Semiconductor Materials and Devices. Discussion
1996
This literature review leads to the conclusion that recently the basis for an understanding of the electrical and optical properties of structural defects in semiconductors, especially in silicon, has begun to emerge. This is due largely to the ability of scanning electron microscopy (SEM) electron beam induced current (EBIC) and cathodoluminescence (CL) to determine the properties of single, well-defined defects in "state of the art" material. However, there are still major differences concerning the physical models to be used to explain different forms of dislocation EBIC contrast variation with temperature and beam current. Basic ideas in this field are emphasized. In contrast, there has been little systematic fundamental study of the role of defects in devices. Well-known correlations of properties with dislocation densities show that defects in materials and devices are undesirable, although the numbers that can be tolerated are often large and vary greatly from one m...
Journal of Physics: Conference Series, 2019
The development of GaAs/Si heterostructures can be an important stage for use as solar cells, LEDs and lasers based on silicon substrates. At present, A3B5 compounds grown epitaxial on Si substrates are of great interest because of the monolithic integration of optoelectronic devices with Si-based microelectronics. High-quality epitaxial growth of heterostructures will not only ensure high mobility of the carrier materials, but also preserve the advantages of lightweight and inexpensive Si substrates with high mechanical strength and excellent thermal parameters. However, obtaining A3B5 compounds with high quality crystals of GaAs/Si heterostructures is a difficult task due to the formation of an antiphase domain boundary as a result of the growth of polar GaAs on a non-polar Si substrate. Because of this, a high density of penetrating dislocations arises due to the mismatch of the lattice parameters (4.1%), as well as the coefficient of thermal expansion (62%).
1992
Approximately 250 papers were presented. This meeting addressed the fundamental science of imperfection in semiconductor materials. A wide range of defects of both fundamental and technological interest that include native defects, impurities, dislocations, and defects at surfaces and interfaces in a variety of semiconductor mate-'\ rials (Si, Ge, diamond, III-V and II-VI compounds, and related alloys) were discussed. Properties of interest included defect structures (atomic and electronic), defect-3-ICDS-16 COMMITTEES