Quantum Hall Effect Research Papers (original) (raw)

We report the experimental detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, B, in the large filling factor limit.... more

We report the experimental detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, B, in the large filling factor limit. Vanishing resistance is observed in the vicinity of B = [4/(4j+1)] B_f, where Bf =2π f m^*/e, where m^* an the effective mass, e is the charge, and f is the microwave frequency. The dependence of the effect is reported as a function of f, the temperature, the power, the current, and other experimental variables.[1] [1] R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Nature 420, 646 (2002); cond-mat/0303034, 0305507, 0306388, 0310474, 0311010.