Rf-Magnetron Sputtering Research Papers - Academia.edu (original) (raw)

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- Engineering, Thin Film, Hydrogen Energy, Hydrogen Production
- by Giridhar S. Kulkarni
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- Engineering, Self Assembly, Semiconductor Devices, Advanced Materials
- by Alexandra Gonçalves
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- Engineering, Technology, Zinc Oxide, Physical sciences
- by ki park
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- Engineering, Technology, Crystal structure, Zinc Oxide
- by Phalguni Gupta
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- Engineering, Materials Engineering, Chemical Engineering, Thermodynamics
- by Elvira Fortunato
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- Field effect transistors, Thin Films, Electron Device, Thin Film
- by Raquel Barros
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- Engineering, Crystal structure, Physical sciences, Electrical Resistance
- by DIPTIRANJAN SAHU
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- Materials Science, Multidisciplinary, Thin Films, Thin Film
- by J. Wolke
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- Physical Chemistry, Water, Biomaterials, Hydroxyapatite
- by giuseppe zollo
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- Engineering, Technology, Zinc Oxide, Infrared spectroscopy

ZnO thin films were fabricated on glass substrate by sol-gel method. A stable and homogeneous solution was prepared by dissolving zinc acetate dehydrate as a starting material in a solution of 2-methoxyethanol and monoethanolamine (MEA). The precursor concentration was selected as the parameter to optimize the thin films quality. The molar ratio of zinc acetate dehydrate was kept at 1. The thin films were preheated at 300° C for 10 minutes after each coating. After depositing all layers, the thin films are annealed for 1 hour in order to obtain transparent ZnO thin films. It was found that the precursor concentration affect the IV characteristic, transmittance, and the thickness of the resultant ZnO thin films.

- by Hafiz Mamat
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- Engineering, Materials Engineering, Condensed Matter Physics, Quantum Physics

ZnO thin films were epitaxially grown on α-Al2O3 (0001) substrate by radio-frequency (rf) magnetron sputtering. Among the ZnO films deposited at 550 °C, the film deposited at 80 W has the narrowest full width half maximum (FWHM) of x-ray diffraction (XRD) θ-rocking curve, 0.16°, indicating a highly c-axis oriented columnar structure. The FWHM of XRD θ-rocking curve of the ZnO film deposited at 120 W and 600 °C was 0.13° with a minimum channeling yield, 4%-5%. In photoluminescence (PL) measurement, only the sharp near band edge emission was observed at room temperature (RT). The FWHM of PL peak was decreased from 133 to 89 meV as rf power increased from 80 to 120 W at 550 °C, and that of film deposited at 120 W and 600 °C showed 76 meV which is lower value than any other ever reported. These PL results were somewhat opposite to that of XRD. From transmission electron microscopy analysis, grain size and defects were found to affect the PL properties. In this study, the PL property of undoped ZnO thin films is discussed in terms of the crystalline structure and the size of grain.

- by Rodrigo Martins
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- Materials Engineering, Zinc Oxide, Non crystalline solids, Non
- by George Kiriakidis
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- Engineering, Remote Sensing, Applied Physics, Zinc Oxide
- by Guy GARRY
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- Engineering, Materials Engineering, Technology, Applied Physics

Cu2ZnSnSe4 (CZTSe) thin films were grown in a single step procedure by RF magnetron sputtering from a compacted powder consisting of blended chalcogenides. Targets with various chalcogenide mole ratios were designed for the purpose of preparing stoichiometric as-grown films. The material concentrations of the films grown at room temperature were found to depend on the mole ratio of the chalcogenides in the targets. It was found that a significant deviation of material concentration of the films from ideal stoichiometry led to the formation of CuSe, ZnSe and SnSe secondary phases. CZTSe films with a stannite phase could be grown even at room temperature from the sputtering target containing Cu2Se with corresponding growth orientations of (101), (112), (220/204), (312/116) and (332/316). The p-type CZTSe film grown at a substrate temperature of 150C showed a high absorption coefficient of 10cm with an optical band gap of 1.56 eV, resistivity as low as 1.482Ωcm and carrier concentration of 1×10cm. These results suggested that the control of the target compositions was crucial to grow single phase and stoichiometric quaternary CZTSe films.

- by badrul munir
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- Materials Engineering, Physics, Condensed Matter Physics, Thin Films
- by Tomi Laurila
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- Atomic Force Microscopy, Microelectronic, Thin Film, Nitrogen
- by Wilfried Wunderlich
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- Materials Engineering, Epitaxial Growth, Crystal structure, Thin Film
- by Joop Wolke
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- Biomedical Engineering, Hydroxyapatite, Scanning Electron Microscopy, Titanium
- by Amit Goyal
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- Materials Engineering, Condensed Matter Physics, X Rays, Pulsed Laser Deposition
- by Luigi Quercia
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- Materials Engineering, Condensed Matter Physics, Nanotechnology, Optical Properties
- by tran cuong
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- Materials Engineering, Brain, Mathematical Sciences, Thin Film
- by Nainesh Patel
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- Engineering, Thin Film, Hydrogen Energy, Hydrogen Production
- by Soo Kim
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- Engineering, Plasma Physics, Technology, Microstructure
- by Isabel Ferreira
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- Engineering, Technology, Transparent Conducting Oxide Materials, Zinc Oxide
- by Franc Svegl
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- Materials Engineering, Crystal Growth, Nanoparticle, Copper

Aluminium-doped ZnO thin films, with a doping level in the range 2–2.8 at.%, were deposited by RF magnetron sputtering. Sputtering processes with pure Ar and Ar/H2 gas mixtures have been explored. Electrical conductivity and Hall mobility of ZnO:Al films were measured in a wide temperature range. It has been found that the addition of hydrogen to the sputtering gas is an effective method to modify the morphological, structural and electrical properties of the ZnO:Al films. A low hydrogen dilution is able to produce a noticeable improvement of the conductivity by means of a better effectiveness of the Al doping. ZnO:Al films deposited at low hydrogen dilution showed a columnar structure whereas at high hydrogen dilution spherical shaped domains were present, formed by many stacked crystallites. Carrier mobility for the former structure was limited by bulk mechanisms, particularly by acoustical phonon and ionized impurity scattering. Carrier mobility for the latter structure was limited by grain boundary mechanisms, particularly by tunnelling effect between neighbouring spherical macroaggregates.

- by Giovanni Cantele
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- Engineering, Technology, Zinc Oxide, Physical sciences
- by Alvin Compaan
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- Engineering, Solar Cell, Solar Energy, Magnetron Sputtering
- by Manoj Ramachandran
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- Materials Engineering, Zinc Oxide, Silica, Thin Film
- by Tsuyoshi Horikawa
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- Mathematical Sciences, Thin Film, Physical sciences, Electrical Resistance
- by Minh Nguyễn
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- Engineering, Technology, Solar Cell, Thin Film
- by Selvakumar N and +1
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- Engineering, Titanium, Heat Treatment, Copper
- by Stefano Loreti
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- Engineering, Technology, Crystal Growth, X Rays
- by Eri Wibowo
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- Engineering, Materials Engineering, Chemical Engineering, Analytical Chemistry
- by Abdul Faheem Khan
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- Engineering, Applied Physics, Atomic Force Microscopy, Multidisciplinary

Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C-V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10-7 A cm-2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer-ferroelectric interface is studied by the voltage stress method. Capacitance-voltage (C-V) and leakage current density (J-V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

- by anirban dhar
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- Engineering, Materials Engineering, Condensed Matter Physics, Technology
- by Mathias Schubert
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- Engineering, Applied Physics, Near Infrared, Atomic Force Microscopy
- by Alexandra Gonçalves
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- Engineering, Technology, Polymorphism, Zinc Oxide
- by Elvira Fortunato
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- Production, Secondary Ion Mass Spectrometry, Zinc Oxide, Annealing
- by Kostya Ostrikov
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- Materials Engineering, Hydroxyapatite, Vacuum, Quantum Dot
- by Kostya Ostrikov
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- Biomedical Engineering, Hydroxyapatite, Cell Culture, Thin Film
- by Boris Minaev
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- Engineering, Chemistry, Quantum Chemistry, Technology
- by Jorge Mata
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- Engineering, Materials Engineering, Mechanical Engineering, Condensed Matter Physics