| dbo:abstract |
John Battiscombe „J. B.“ Gunn (* 13. Mai 1928 in Kairo, Ägypten; † 2. Dezember 2008 in Mount Kisco, New York) war ein britischer Physiker. Nach ihm sind u. a. der Gunn-Effekt und die Gunn-Diode benannt. (de) John Battiscombe "J. B." Gunn (13 May 1928 – 2 December 2008), known as Ian or Iain, was a British physicist, who spent most of his career in the United States. He discovered the Gunn effect, which led to the invention of the Gunn diode, the first inexpensive source of microwave power that did not require vacuum tubes. He was born John Battiscombe Gunn, but only used that name in legal documents. (en) John Battiscombe Gunn (né le 13 mai 1928 en Égypte - mort le 2 décembre 2008) est un physicien britannique. Il a donné son nom à l'effet Gunn et à la diode Gunn basée sur cet effet. (fr) John Battiscombe Gunn, noto che come J. B. Gunn, Ian Gunn o Iain Gunn (Il Cairo, 13 maggio 1928 – Mount Kisco, 2 dicembre 2008), è stato un fisico statunitense. Figlio di Battiscombe Gunn, fu docente alla Columbia University dal 1953 al 1971 e ricercatore all'IBM dal 1971. Il suo nome è legato alla scoperta (1964) dell', che permise la realizzazione del diodo Gunn, la prima fonte di microonde che non richiedeva la valvola termoionica. (it) Джон Бэттискомб Ганн (англ. John Battiscombe Gunn; 13 мая 1928 — 2 декабря 2008) — британский физик (большую часть жизни работавший в США), открывший эффект Ганна, позволивший создать диод, также названный в его честь — дешёвый источник микроволновых колебаний, не требующий вакуумных трубок. В документах использовал имя J. B. Gunn. (ru) Джон Баттіскомб Ґанн (англ. John Battiscombe Gunn) (13 травня 1928 — 2 грудня 2008) — британський та американський фізик. (uk) |
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Gunn with friends at a party, 1969. (en) |
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IEEE Fellow (en) (en) IEEE Morris N. Liebmann Memorial Award (en) Valdemar Poulsen Medal (en) IBM Fellow (en) John Scott Award (en) |
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Cairo, Egypt (en) |
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Gunn with friends at a party, 1969. (en) |
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British (en) |
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University of British Columbia (en) (en) Thomas J. Watson Research Center (en) Elliott Brothers (en) Royal Radar Establishment (en) |
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John Battiscombe „J. B.“ Gunn (* 13. Mai 1928 in Kairo, Ägypten; † 2. Dezember 2008 in Mount Kisco, New York) war ein britischer Physiker. Nach ihm sind u. a. der Gunn-Effekt und die Gunn-Diode benannt. (de) John Battiscombe "J. B." Gunn (13 May 1928 – 2 December 2008), known as Ian or Iain, was a British physicist, who spent most of his career in the United States. He discovered the Gunn effect, which led to the invention of the Gunn diode, the first inexpensive source of microwave power that did not require vacuum tubes. He was born John Battiscombe Gunn, but only used that name in legal documents. (en) John Battiscombe Gunn (né le 13 mai 1928 en Égypte - mort le 2 décembre 2008) est un physicien britannique. Il a donné son nom à l'effet Gunn et à la diode Gunn basée sur cet effet. (fr) John Battiscombe Gunn, noto che come J. B. Gunn, Ian Gunn o Iain Gunn (Il Cairo, 13 maggio 1928 – Mount Kisco, 2 dicembre 2008), è stato un fisico statunitense. Figlio di Battiscombe Gunn, fu docente alla Columbia University dal 1953 al 1971 e ricercatore all'IBM dal 1971. Il suo nome è legato alla scoperta (1964) dell', che permise la realizzazione del diodo Gunn, la prima fonte di microonde che non richiedeva la valvola termoionica. (it) Джон Бэттискомб Ганн (англ. John Battiscombe Gunn; 13 мая 1928 — 2 декабря 2008) — британский физик (большую часть жизни работавший в США), открывший эффект Ганна, позволивший создать диод, также названный в его честь — дешёвый источник микроволновых колебаний, не требующий вакуумных трубок. В документах использовал имя J. B. Gunn. (ru) Джон Баттіскомб Ґанн (англ. John Battiscombe Gunn) (13 травня 1928 — 2 грудня 2008) — британський та американський фізик. (uk) |
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John Battiscombe Gunn (de) John Battiscombe Gunn (it) J. B. Gunn (en) John Battiscombe Gunn (fr) Ганн, Джон (ru) Джон Баттіскомб Ґанн (uk) |
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