Programmable metallization cell (original) (raw)
The programmable metallization cell, or PMC, is a non-volatile computer memory developed at Arizona State University. PMC, a technology developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM. CBRAM became a registered trademark of Adesto Technologies in 2011. NEC has a variant called "Nanobridge" and Sony calls their version "electrolytic memory".
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| dbo:abstract | La cellule de métallisation programmable (programmable metallization cell en anglais, ou PMC) est une forme de mémoire non volatile en cours d'élaboration à l’université d’état d’Arizona (Arizona State University) et son entreprise dérivée, . La PMC est une des technologies qui sont mises au point pour remplacer la très populaire mémoire flash, la surpassant à la fois en durée de vie, économie de puissance électrique, et densité de stockage. Infineon Technologies, qui a breveté la technologie en 2004, l’appelle sous le nom de conductive-bridging RAM, ou CBRAM. NEC a une variante appelée « Nanobridge » et Sony appelle leur version « mémoire électrolytique » (« electrolytic memory »). La technologie PMC est inventée par le docteur Michael Kozicki, qui est professeur d’ingénierie électrique à l’Arizona State University. En 1996, il a fondé la société pour la commercialiser. (fr) The programmable metallization cell, or PMC, is a non-volatile computer memory developed at Arizona State University. PMC, a technology developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM. CBRAM became a registered trademark of Adesto Technologies in 2011. NEC has a variant called "Nanobridge" and Sony calls their version "electrolytic memory". (en) CBRAM, eller conductive-bridging RAM, är en version av den nya icke-flyktiga minnestypen (programmable metallization cell). Det amerikanska företaget licensierade teknologin 2004. Japanska NEC och Sony har också framställt egna varianter av teknologin. NEC:s variant kallas för "Nanobridge", medan Sony kallar sin variant för "electrolytic memory". PMC är det generella begreppet som omfattar denna nya typ av teknologi för icke-flyktigt minne. Tekniken utvecklades i Arizona State Universitys avdelning Axon Technologies, och är en av flera teknologier som har utvecklats för att ersätta den tidigare standarden flashminne, som idag är den vanligaste använda minnestypen. PMC ger en kombination av längre livslängd, lägre strömförbrukning och större minnesdensitet än konkurrerande minnestyper. (sv) 可編程金屬化單元（英語：programmable metallization cell，縮寫為PMC），一種新的非揮發性記憶體技術，由亞利桑那州立大學開發，這項專利目前已授權並轉移給Axon Technologies公司。它有可能取代快閃記憶體。 英飛凌在2004年取得PMC技術的授權，並用來開發導電橋接隨機存取記憶體(conductive-bridging RAM，CBRAM)，NEC稱為Nanobridge，Sony稱其為electrolytic memory。但這些公司都沒有做出實際應用成果。 目前最主要推動 CBRAM 裝置的公司是Adesto Technologies，最快有可能在2011年第一季推出首款 CBRAM 樣品。 (zh) |
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| rdfs:comment | The programmable metallization cell, or PMC, is a non-volatile computer memory developed at Arizona State University. PMC, a technology developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM. CBRAM became a registered trademark of Adesto Technologies in 2011. NEC has a variant called "Nanobridge" and Sony calls their version "electrolytic memory". (en) 可編程金屬化單元（英語：programmable metallization cell，縮寫為PMC），一種新的非揮發性記憶體技術，由亞利桑那州立大學開發，這項專利目前已授權並轉移給Axon Technologies公司。它有可能取代快閃記憶體。 英飛凌在2004年取得PMC技術的授權，並用來開發導電橋接隨機存取記憶體(conductive-bridging RAM，CBRAM)，NEC稱為Nanobridge，Sony稱其為electrolytic memory。但這些公司都沒有做出實際應用成果。 目前最主要推動 CBRAM 裝置的公司是Adesto Technologies，最快有可能在2011年第一季推出首款 CBRAM 樣品。 (zh) La cellule de métallisation programmable (programmable metallization cell en anglais, ou PMC) est une forme de mémoire non volatile en cours d'élaboration à l’université d’état d’Arizona (Arizona State University) et son entreprise dérivée, . La PMC est une des technologies qui sont mises au point pour remplacer la très populaire mémoire flash, la surpassant à la fois en durée de vie, économie de puissance électrique, et densité de stockage. Infineon Technologies, qui a breveté la technologie en 2004, l’appelle sous le nom de conductive-bridging RAM, ou CBRAM. NEC a une variante appelée « Nanobridge » et Sony appelle leur version « mémoire électrolytique » (« electrolytic memory »). (fr) CBRAM, eller conductive-bridging RAM, är en version av den nya icke-flyktiga minnestypen (programmable metallization cell). Det amerikanska företaget licensierade teknologin 2004. Japanska NEC och Sony har också framställt egna varianter av teknologin. NEC:s variant kallas för "Nanobridge", medan Sony kallar sin variant för "electrolytic memory". (sv) |
| rdfs:label | Programmable Metallization Cell (fr) Programmable metallization cell (en) CBRAM (sv) 可編程金屬化單元 (zh) |
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