Scandium nitride (original) (raw)
Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.
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| dbo:abstract | Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate. (en) 窒化スカンジウム(Scandium nitride)は、III-V間接遷移半導体である。スカンジウム陽イオンと窒化物陰イオンから構成される。昇華とにより、タングステンホイル上に結晶を成長させることができる。格子定数0.451 nmの岩塩型結晶構造であり、間接遷移が0.9 eV、直接遷移が2-2.4 eVである。これらの結晶は、窒素ガスをインジウム-スカンジウム溶融物に溶解し、マグネトロン、分子線エピタキシー法、やその他の沈殿法により合成することができる。窒化スカンジウムは、二酸化ケイ素または基板上の半導体の効果的なゲートでもある。 (ja) 氮化钪是一种无机化合物，化学式为ScN，由Sc3+和N3−构成。它可以由铟-钪熔体溶解氮气来制备，并在钨箔上通过升华和凝华来生长单晶。氮化钪也是二氧化硅（SiO2）或二氧化铪（HfO2）底物上半导体的有效栅极。 (zh) Нитрид скандия — бинарное неорганическое соединение металла скандия и азота с формулой ScN, синие кристаллы, реагирует с водой. (ru) |
| dbo:alternativeName | Nitridoscandium (en) Azanylidynescandium (en) |
| dbo:iupacName | Scandium nitride (en) |
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| dbo:wikiPageWikiLink | dbr:Scandium_phosphide dbr:Nitrogen dbr:Scandium dbr:Sputter_deposition dbr:Condensation dbc:Scandium_compounds dbr:Anion dbr:Silicon_dioxide dbr:Sublimation_(phase_transition) dbr:Yttrium_nitride dbr:Cation dbc:Nitrides dbc:Rock_salt_crystal_structure dbr:Tungsten dbr:Hafnium_dioxide dbr:HVPE dbr:Indirect_bandgap dbr:Indium dbr:Nanometre dbr:Semiconductors dbr:Semiconductor dbr:Nitride dbr:Molecular-beam_epitaxy dbr:III-V dbr:Lanthanum_nitride dbr:Scandium_antimonide dbr:Scandium_arsenide dbr:Scandium_bismuthide |
| dbp:iupacname | Scandium nitride (en) |
| dbp:othernames | Nitridoscandium (en) Azanylidynescandium (en) |
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| dcterms:subject | dbc:Scandium_compounds dbc:Nitrides dbc:Rock_salt_crystal_structure |
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| rdfs:comment | Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate. (en) 窒化スカンジウム(Scandium nitride)は、III-V間接遷移半導体である。スカンジウム陽イオンと窒化物陰イオンから構成される。昇華とにより、タングステンホイル上に結晶を成長させることができる。格子定数0.451 nmの岩塩型結晶構造であり、間接遷移が0.9 eV、直接遷移が2-2.4 eVである。これらの結晶は、窒素ガスをインジウム-スカンジウム溶融物に溶解し、マグネトロン、分子線エピタキシー法、やその他の沈殿法により合成することができる。窒化スカンジウムは、二酸化ケイ素または基板上の半導体の効果的なゲートでもある。 (ja) 氮化钪是一种无机化合物，化学式为ScN，由Sc3+和N3−构成。它可以由铟-钪熔体溶解氮气来制备，并在钨箔上通过升华和凝华来生长单晶。氮化钪也是二氧化硅（SiO2）或二氧化铪（HfO2）底物上半导体的有效栅极。 (zh) Нитрид скандия — бинарное неорганическое соединение металла скандия и азота с формулой ScN, синие кристаллы, реагирует с водой. (ru) |
| rdfs:label | 窒化スカンジウム (ja) Scandium nitride (en) Нитрид скандия (ru) 氮化钪 (zh) |
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