Electrical creation of spin polarization in silicon at room temperature (original) (raw)

Nature volume 462, pages 491–494 (2009)Cite this article

Abstract

The control and manipulation of the electron spin in semiconductors is central to spintronics1,2, which aims to represent digital information using spin orientation rather than electron charge. Such spin-based technologies may have a profound impact on nanoelectronics, data storage, and logic and computer architectures. Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (gallium arsenide and silicon) using all-electrical structures3,4,5,6,7,8,9, but so far only at temperatures below 150 K and in n-type materials, which limits further development. Here we demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect and the electrical detection of the induced spin accumulation. A spin splitting as large as 2.9 meV is created in n-type silicon, corresponding to an electron spin polarization of 4.6%. The extracted spin lifetime is greater than 140 ps for conduction electrons in heavily doped n-type silicon at 300 K and greater than 270 ps for holes in heavily doped p-type silicon at the same temperature. The spin diffusion length is greater than 230 nm for electrons and 310 nm for holes in the corresponding materials. These results open the way to the implementation of spin functionality in complementary silicon devices and electronic circuits operating at ambient temperature, and to the exploration of their prospects and the fundamental rules that govern their behaviour.

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References

  1. Žutić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004)
    Article ADS Google Scholar
  2. Chappert, C., Fert, A. & Nguyen van Dau, F. The emergence of spin electronics in data storage. Nature Mater. 6, 813–823 (2007)
    Article ADS CAS Google Scholar
  3. Lou, X. et al. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Phys. 3, 197–202 (2007)
    Article ADS CAS Google Scholar
  4. Appelbaum, I., Huang, B. & Monsma, D. J. Electronic measurement and control of spin transport in silicon. Nature 447, 295–298 (2007)
    Article ADS CAS Google Scholar
  5. van ‘t Erve, O. M. J. et al. Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry. Appl. Phys. Lett. 91, 212109 (2007)
    Article ADS Google Scholar
  6. Ando, Y. et al. Electrical injection and detection of spin-polarized electrons in silicon through Fe3Si/Si Schottky tunnel barrier. Appl. Phys. Lett. 94, 182105 (2009)
    Article ADS Google Scholar
  7. Ciorga, M. et al. Electrical spin injection and detection in lateral all-semiconductor devices. Phys. Rev. B 79, 165321 (2009)
    Article ADS Google Scholar
  8. Lou, X. et al. Electrical detection of spin accumulation at a ferromagnet–semiconductor interface. Phys. Rev. Lett. 96, 176603 (2006)
    Article ADS CAS Google Scholar
  9. Tran, M. et al. Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. Phys. Rev. Lett. 102, 036601 (2009)
    Article ADS CAS Google Scholar
  10. Hanbicki, A. T., Jonker, B. T., Itskos, G., Kioseoglou, G. & Petrou, A. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Appl. Phys. Lett. 80, 1240–1242 (2002)
    Article ADS CAS Google Scholar
  11. Motsnyi, V. F. et al. Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure. Appl. Phys. Lett. 81, 265–267 (2002)
    Article ADS CAS Google Scholar
  12. Jonker, B. T., Kioseoglou, G., Hanbicki, A. T., Li, C. H. & Thompson, P. E. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact. Nature Phys. 3, 542–546 (2007)
    Article ADS CAS Google Scholar
  13. Fert, A. & Jaffrès, H. Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor. Phys. Rev. B 64, 184420 (2001)
    Article ADS Google Scholar
  14. Osipov, V. V. & Bratkovsky, A. M. Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets: spin injection and extraction. Phys. Rev. B 72, 115322 (2005)
    Article ADS Google Scholar
  15. Min, B. C., Motohashi, K., Lodder, J. C. & Jansen, R. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nature Mater. 5, 817–822 (2006)
    Article ADS CAS Google Scholar
  16. Park, B. G., Banerjee, T., Lodder, J. C. & Jansen, R. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers. Phys. Rev. Lett. 99, 217206 (2007)
    Article ADS CAS Google Scholar
  17. Patel, R. S., Dash, S. P., de Jong, M. P. & Jansen, R. Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers. J. Appl. Phys. 106, 016107 (2009)
    Article ADS Google Scholar
  18. Lepine, D. J. Spin resonance of localized and delocalized electrons in phosphorus-doped silicon between 20 and 300 K. Phys. Rev. B 2, 2429–2439 (1970)
    Article ADS Google Scholar
  19. Fabian, J., Matos-Abiague, A., Ertler, C., Stano, P. & Žutić, I. Semiconductor spintronics. Acta Phys. Slov. 57, 565–907 (2007)
    ADS CAS Google Scholar
  20. Cheng, J. L., Wu, M. W. & Fabian, J. Theory of the spin relaxation of conduction electrons in silicon. Preprint at 〈http://arxiv1.library.cornell.edu/abs/0906.4054〉 (2009)
  21. Kodera, H. Effect of doping on the electron spin resonance in phosphorus doped silicon. II. J. Phys. Soc. Jpn 21, 1040–1045 (1966)
    Article ADS CAS Google Scholar
  22. Anderberg, J. M., Einevoll, G. T., Vier, D. C., Schultz, S. & Sham, L. J. Probing the Schottky barrier with conduction electron spin resonance. Phys. Rev. B 55, 13745–13751 (1997)
    Article ADS CAS Google Scholar
  23. Biagi, R. et al. Photoemission investigation of alkali-metal-induced two-dimensional electron gas at the Si(111)(1×1):H surface. Phys. Rev. B 67, 155325 (2003)
    Article ADS Google Scholar
  24. Shang, C. H., Nowak, J., Jansen, R. & Moodera, J. S. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions. Phys. Rev. B 58, R2917–R2920 (1998)
    Article ADS CAS Google Scholar
  25. Feher, G., Hensel, J. C. & Gere, E. A. Paramagnetic resonance absorption from acceptors in silicon. Phys. Rev. Lett. 5, 309–311 (1960)
    Article ADS CAS Google Scholar
  26. Succi, M., Canino, R. & Ferrario, B. Atomic-absorption evaporation flow-rate measurements of alkali metal dispensers. Vacuum 35, 579–582 (1985)
    Article ADS CAS Google Scholar

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Acknowledgements

This work was financially supported by the NWO-VIDI programme and the Netherlands Foundation for Fundamental Research on Matter.

Author Contributions S.P.D. fabricated most of the devices and carried out most of the measurements. S.S. and M.P.d.J. contributed to the device fabrication and some of the measurements. R.S.P. contributed to the Yb control experiment. All co-authors contributed important insights and ideas. R.J. supervised and coordinated the research. R.J. and S.P.D. wrote the paper, with help from all co-authors.

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Authors and Affiliations

  1. MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands
    Saroj P. Dash, Sandeep Sharma, Ram S. Patel, Michel P. de Jong & Ron Jansen

Authors

  1. Saroj P. Dash
  2. Sandeep Sharma
  3. Ram S. Patel
  4. Michel P. de Jong
  5. Ron Jansen

Corresponding author

Correspondence toRon Jansen.

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Dash, S., Sharma, S., Patel, R. et al. Electrical creation of spin polarization in silicon at room temperature.Nature 462, 491–494 (2009). https://doi.org/10.1038/nature08570

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