Chua, L. O. Memristor—missing circuit element. IEEE Trans. Circuit TheoryCT-18, 507–519 (1971). This article contains the original theoretical description of memristors. Article Google Scholar
Chua, L. O. & Kang, S. M. Memristive devices and systems. Proc. IEEE64, 209–223 (1976). Article Google Scholar
Chua, L. O. Resistance switching memories are memristors. Appl. Phys. A102, 765–783 (2011). ArticleCAS Google Scholar
Prodromakis, T., Toumazou, C. & Chua, L. Two centuries of memristors. Nature Mater.11, 478–481 (2012). ArticleCAS Google Scholar
Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature453, 80–83 (2008). This article first established the link between the memristor theory and experimental results. ArticleCAS Google Scholar
Hickmott, T. W. Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys.33, 2669–2682 (1962). ArticleCAS Google Scholar
Dearnaley, G., Stoneham, A. M. & Morgan, D. V. Electrical phenomena in amorphous oxide films. Rep. Prog. Phys.33, 1129–1191 (1970). Article Google Scholar
Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nature Mater.6, 833–840 (2007). ArticleCAS Google Scholar
Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories—Nanoionic mechanisms, prospects, and challenges. Adv. Mater.21, 2632–2663 (2009). ArticleCAS Google Scholar
Sawa, A. Resistive switching in transition metal oxides. Mater. Today11, 28–36 (June, 2008). ArticleCAS Google Scholar
Kyung Min, K., Doo Seok, J. & Cheol Seong, H. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology22, 254002 (2011). ArticleCAS Google Scholar
Valov, I., Waser, R., Jameson, J. R. & Kozicki, M. N. Electrochemical metallization memories—fundamentals, applications, prospects. Nanotechnology22, 254003 (2011). ArticleCAS Google Scholar
Pershin, Y. V. & Di Ventra, M. Memory effects in complex materials and nanoscale systems. Adv. Phys.60, 145–227 (2011). Article Google Scholar
McCreery, R. L. & Bergren, A. J. Progress with molecular electronic junctions: Meeting experimental challenges in design and fabrication. Adv. Mater.21, 4303–4322 (2009). ArticleCAS Google Scholar
Yang, Z., Ko, C. & Ramanathan, S. Oxide electronics utilizing ultrafast metal–insulator transitions. Ann. Rev. Mater. Res.41, 337–367 (2011). ArticleCAS Google Scholar
Jeong, D. S. et al. Emerging memories: resistive switching mechanisms and current status. Rep. Prog. Phys.75, 076502 (2012). ArticleCAS Google Scholar
Akinaga, H. & Shima, H. Resistive random access memory (ReRAM) based on metal oxides. Proc. IEEE98, 2237–2251 (2010). ArticleCAS Google Scholar
Waser, R. (ed.) Nanoelectronics and Information Technology 3rd edn, (Wiley, 2012). Google Scholar
Choi, B. J. et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. J. Appl. Phys.98, 033715 (2005). ArticleCAS Google Scholar
Seo, S. et al. Reproducible resistance switching in polycrystalline NiO films. Appl. Phys. Lett.85, 5655–5657 (2004). ArticleCAS Google Scholar
Szot, K., Speier, W., Bihlmayer, G. & Waser, R. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 . Nature Mater.5, 312–320 (2006). This article demonstrated scalability of oxide-based switching down to individual dislocations, that is, <1 nm. ArticleCAS Google Scholar
Beck, A., Bednorz, J. G., Gerber, C., Rossel, C. & Widmer, D. Reproducible switching effect in thin oxide films for memory applications. Appl. Phys. Lett.77, 139–141 (2000). ArticleCAS Google Scholar
Liu, S. Q., Wu, N. J. & Ignatiev, A. Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl. Phys. Lett.76, 2749–2751 (2000). ArticleCAS Google Scholar
Quintero, M., Levy, P., Leyva, A. G. & Rozenberg, M. J. Mechanism of electric-pulse-induced resistance switching in manganites. Phys. Rev. Lett.98, 116601 (2007). ArticleCAS Google Scholar
Goux, L. et al. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers. J. Appl. Phys.107, 024512–024517 (2009). ArticleCAS Google Scholar
Jeong, D. S., Schroeder, H. & Waser, R. Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack. Electrochemi. Solid State Lett.10, G51–G53 (2007). ArticleCAS Google Scholar
Yang, J. J. et al. Metal/TiO2 interfaces for memristive switches. Appl. Phys. A102, 785–789 (2011). ArticleCAS Google Scholar
Yang, J. J. et al. Diffusion of adhesion layer metals controls nanoscale memristive switching. Adv. Mater.22, 4034–4038 (2010). ArticleCAS Google Scholar
Stewart, D. R. et al. Molecule-independent electrical switching in Pt/organic monolayer/Ti devices. Nano Lett.4, 133–136 (2003). ArticleCAS Google Scholar
Standley, B. et al. Graphene-based atomic-scale switches. Nano Lett.8, 3345–3349 (2008). ArticleCAS Google Scholar
Yao, J., Zhong, L., Natelson, D. & Tour, J. M. Silicon oxide: A non-innocent surface for molecular electronics and nanoelectronics studies. J. Am. Chem. Soc.133, 941–948 (2011). ArticleCAS Google Scholar
Gomez-Marlasca, F., Ghenzi, N., Rozenberg, M. J. & Levy, P. Understanding electroforming in bipolar resistive switching oxides. Appl. Phys. Lett.98, 042901–042903 (2011). ArticleCAS Google Scholar
Yang, J. J. et al. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology20, 215201 (2009). ArticleCAS Google Scholar
Jeong, D. S., Schroeder, H., Breuer, U. & Waser, R. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere J. Appl. Phys.104, 123716 (2008). ArticleCAS Google Scholar
Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotech.3, 429–433 (2008). ArticleCAS Google Scholar
Kwon, D. H. et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotech.5, 148–153 (2010). This article first demonstrated that the channel structure of TiO2is a crystalline suboxide, Magnéli phase, Ti4O7. ArticleCAS Google Scholar
Nagashima, K. et al. Intrinsic mechanisms of memristive switching. Nano Lett.11, 2114–2118 (2011). ArticleCAS Google Scholar
Kim, K. M. et al. Collective motion of conducting filaments in Pt/n-type TiO2/p-Type NiO/Pt stacked resistance switching memory. Adv. Funct. Mater.21, 1587–1592 (2011). ArticleCAS Google Scholar
He, J. et al. Prediction of high-temperature point defect formation in TiO2 from combined ab initio and thermodynamic calculations. Acta Mater.55, 4325–4337 (2007). ArticleCAS Google Scholar
Janousch, M. et al. Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory. Adv. Mater.19, 2232–2235 (2007). ArticleCAS Google Scholar
Nian, Y. B., Strozier, J., Wu, N. J., Chen, X. & Ignatiev, A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett.98, 146403 (2007). ArticleCAS Google Scholar
Strachan, J. P. et al. Direct identification of the conducting channels in a functioning memristive device. Adv. Mater.22, 3573–3577 (2010). ArticleCAS Google Scholar
Yajima, T. et al. Spatial redistribution of oxygen ions in oxide resistance switching device after forming process. Jpn. J. Appl. Phys.49, 060215 (2010). ArticleCAS Google Scholar
Magyari-Köpe, B., Tendulkar, M., Park, S-G., Lee, H. D. & Nishi, Y. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7 Ca0.3 MnO3 . Nanotechnology22, 254029 (2011). ArticleCAS Google Scholar
Jameson, J. R. & Nishi, Y. Role of hydrogen ions in TiO2-based memory devices. Integrated Ferroelectrics124, 112–118 (2011). ArticleCAS Google Scholar
Tsuruoka, T. et al. Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches. Adv. Funct. Mater.22, 70–77 (2011). ArticleCAS Google Scholar
Strachan, J. P. et al. The switching location of a bipolar memristor: chemical, thermal and structural mapping. Nanotechnology22, 254015 (2011). ArticleCAS Google Scholar
Kim, K. M., Choi, B. J., Shin, Y. C., Choi, S. & Hwang, C. S. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films. Appl. Phys. Lett.91, 012907 (2007). ArticleCAS Google Scholar
Chang, S. H. et al. Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. Appl. Phys. Lett.92, 183507 (2008). ArticleCAS Google Scholar
Kim, K. M., Choi, B. J., Song, S. J., Kim, G. H. & Hwang, C. S. Filamentary resistive switching localized at cathode interface in NiO thin films. J. Electrochem. Soc.156, G213–G216 (2009). ArticleCAS Google Scholar
Baikalov, A. et al. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface. Appl. Phys. Lett.83, 957–959 (2003). ArticleCAS Google Scholar
Muenstermann, R., Menke, T., Dittmann, R. & Waser, R. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices. Adv. Mater.22, 4819–4822 (2010). ArticleCAS Google Scholar
Feng, M., Yang, J. J., Borghetti, J., Medeiros-Ribeiro, G. & Williams, R. S. Observation of two resistance switching modes in TiO2 memristive devices electroformed at low current. Nanotechnology22, 254007 (2011). ArticleCAS Google Scholar
Yang, J. J., Borghetti, J., Murphy, D., Stewart, D. R. & Williams, R. S. A family of electronically reconfigurable nanodevices. Adv. Mater.21, 3754–3758 (2009). ArticleCAS Google Scholar
Yoon, K. J. et al. Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell. Nanotechnology23, 185202 (2012). ArticleCAS Google Scholar
Ielmini, D., Bruchhaus, R. & Waser, R. Thermochemical resistive switching: materials, mechanisms, and scaling projections. Phase Transit.84, 570–602 (2011). ArticleCAS Google Scholar
Karg, S. F. et al. Transition-metal-oxide-based resistance-change memories. IBM J. Res. Dev.52, 481–492 (2008). ArticleCAS Google Scholar
Jiang, W. et al. Local heating-induced plastic deformation in resistive switching devices. J. Appl. Phys.110, 054514 (2011). ArticleCAS Google Scholar
Russo, U. et al. in Electron Devices Meeting, 2007. IEDM 2007. IEEE Int. 775–778 (IEEE, 2007). Book Google Scholar
Borghetti, J. et al. Electrical transport and thermometry of electroformed titanium dioxide memristive switches. J. Appl. Phys.106, 124504 (2009). ArticleCAS Google Scholar
Menzel, S. et al. Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches. Adv. Funct. Mater.21, 4487–4492 (2011). ArticleCAS Google Scholar
Liu, Q. et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv. Mater.24, 1844–1849 (2012). ArticleCAS Google Scholar
Yang, Y. et al. Observation of conducting filament growth in nanoscale resistive memories. Nature Commun.3, 732 (2012). ArticleCAS Google Scholar
Johnson, S. L., Sundararajan, A., Hunley, D. P. & Strachan, D. R. Memristive switching of single-component metallic nanowires. Nanotechnology21, 5 (2010). Google Scholar
Strukov, D., Alibart, F. & Stanley Williams, R. Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal-oxide-metal memristors. Appl. Phys. A107, 509–518 (2012). ArticleCAS Google Scholar
Miao, F. et al. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Adv. Mater.23, 5633–5640 (2011). ArticleCAS Google Scholar
Yao, J., Zhong, L., Natelson, D. & Tour, J. M. In situ imaging of the conducting filament in a silicon oxide resistive switch. Sci. Rep.2, 242 (2012). ArticleCAS Google Scholar
Chang, S. H. et al. Occurrence of both unipolar memory and threshold resistance switching in a NiO Film. Phys. Rev. Lett.102, 026801 (2009). ArticleCAS Google Scholar
Pickett, M. D., Borghetti, J., Yang, J. J., Medeiros-Ribeiro, G. & Williams, R. S. Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system. Adv. Mater.23, 1730–1733 (2011). ArticleCAS Google Scholar
Yang, J. J. et al. High switching endurance in TaO_x_ memristive devices. Appl. Phys. Lett.97, 232102 (2010). This article first proposed memristive material selection criteria for high endurance and low variability. ArticleCAS Google Scholar
Goldfarb, I. et al. Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior. Appl. Phys. A107, 1–11 (2012). ArticleCAS Google Scholar
Lee, M-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nature Mater.10, 625–630 (2011). This article demonstrated >trillion switching cycles from an oxide memristive device. ArticleCAS Google Scholar
Lee, H. Y. et al. in Int. Electron Devices Meeting 2010 IEDM 2010. IEEE Int. 19.7.1–19.7.4 (IEEE, 2010). Google Scholar
Hirose, Y. & Hirose, H. Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films. J. Appl. Phys.47, 2767–2772 (1976). ArticleCAS Google Scholar
West, W. C., Sieradzki, K., Kardynal, B. & Kozicki, M. N. Equivalent circuit modeling of the Ag vertical bar As0.24S0.36Ag0.40 vertical bar Ag system prepared by photodissolution of Ag. J. Electrochem. Soc.145, 2971–2974 (1998). ArticleCAS Google Scholar
Lu, W., Jeong, D. S., Kozicki, M. & Waser, R. Electrochemical metallization cells-blending nanoionics into nanoelectronics? Mater. Res. Soc. Bull.37, 124–130 (2012). ArticleCAS Google Scholar
Hasegawa, T., Terabe, K., Tsuruoka, T. & Aono, M. Atomic switch: Atom/ion movement controlled devices for beyond von-Neumann computers. Adv. Mater.24, 252–267 (2012). ArticleCAS Google Scholar
Jo, S. H., Kim, K. H. & Lu, W. Programmable resistance switching in nanoscale two-terminal devices. Nano Lett.9, 496–500 (2009). ArticleCAS Google Scholar
Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A. L. & Kozicki, M. N. Study of multilevel programming in programmable metallization cell (PMC) memory. Electron Dev. IEEE Trans. on56, 1040–1047 (2009). ArticleCAS Google Scholar
Banno, N., Sakamoto, T., Hasegawa, T., Terabe, K. & Aono, M. Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch. Jpn. J. Appl. Phys.45, 3666–3668 (2006). ArticleCAS Google Scholar
Wang, Z. et al. Resistive switching mechanism in Zn_x_Cd1−_x_S nonvolatile memory devices. Electron Dev. Lett. IEEE28, 14–16 (2007). ArticleCAS Google Scholar
Mitkova, M. & Kozicki, M. N. Mass transport in chalcogenide electrolyte films—materials and applications. J. Non-Cryst. Solids352, 567–577 (2006). ArticleCAS Google Scholar
Valov, I. et al. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. Nature Mater.11, 530–535 (2012). ArticleCAS Google Scholar
Terabe, K., Hasegawa, T., Nakayama, T. & Aono, M. Quantized conductance atomic switch. Nature433, 47–50 (2005). This article demonstrated switching by the motion of a few atoms. ArticleCAS Google Scholar
Sakamoto, T. et al. Electronic transport in Ta2O5 resistive switch. Appl. Phys. Lett.91, 092110 (2007). ArticleCAS Google Scholar
Kever, T., Bottger, U., Schindler, C. & Waser, R. On the origin of bistable resistive switching in metal organic charge transfer complex memory cells. Appl. Phys. Lett.91, 083506 (2007). ArticleCAS Google Scholar
Chen, C., Yang, Y. C., Zeng, F. & Pan, F. Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device. Appl. Phys. Lett.97, 083502–083503 (2010). ArticleCAS Google Scholar
Guan, W. H., Liu, M., Long, S. B., Liu, Q. & Wang, W. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt. Appl. Phys. Lett.93, 223506 (2008). ArticleCAS Google Scholar
Huang, R. et al. Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications. Appl. Phys. A102, 927–931 (2011). ArticleCAS Google Scholar
Feng, P., Shong, Y. & Subramanian, V. A detailed study of the forming stage of an electrochemical resistive switching memory by KMC simulation. Electron Dev. Lett. IEEE32, 949–951 (2012). Google Scholar
Guo, X., Schindler, C., Menzel, S. & Waser, R. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems. Appl. Phys. Lett.91, 133513 (2007). ArticleCAS Google Scholar
Tsuruoka, T., Terabe, K., Hasegawa, T. & Aono, M. Forming and switching mechanisms of a cation-migration-based oxide resistive memory. Nanotechnology21, 425205 (2010). ArticleCAS Google Scholar
Parkin, S. S. P. et al. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers. Nature Mater.3, 862–867 (2004). ArticleCAS Google Scholar
Chanthbouala, A. et al. Solid-state memories based on ferroelectric tunnel junctions. Nature Nanotech.7, 101–104 (2012). ArticleCAS Google Scholar
Jiang, A. Q. et al. A resistive memory in semiconducting BiFeO3 thin-film capacitors. Adv. Mater.23, 1277–1281 (2011). ArticleCAS Google Scholar
Wuttig, M. & Yamada, N. Phase-change materials for rewriteable data storage. Nature Mater.6, 824–832 (2007). ArticleCAS Google Scholar
Raoux, S., Welnic, W. & Ielmini, D. Phase change materials and their application to nonvolatile memories. Chem. Rev.110, 240–267 (2009). ArticleCAS Google Scholar
Chen, A. B. K., Kim, S. G., Wang, Y., Tung, W-S. & Chen, I. W. A size-dependent nanoscale metal–insulator transition in random materials. Nature Nanotech.6, 237–241 (2011). ArticleCAS Google Scholar
Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. H. & Chu, C. W. Electrical switching and bistability in organic/polymeric thin films and memory devices. Adv. Funct. Mater.16, 1001–1014 (2006). ArticleCAS Google Scholar
Lee, T. & Chen, Y. Organic resistive nonvolatile memory materials. Mater. Res. Soc. Bull.37, 144–149 (2012). ArticleCAS Google Scholar
Cario, L., Vaju, C., Corraze, B., Guiot, V. & Janod, E. Electric-field-induced resistive switching in a family of Mott insulators: Towards a new class of RRAM memories. Adv. Mater.22, 5193–5197 (2010). ArticleCAS Google Scholar
Inoue, I. H. & Rozenberg, M. J. Taming the Mott transition for a novel Mott transistor. Adv. Funct. Mater.18, 2289–2292 (2008). ArticleCAS Google Scholar
Hasegawa, T. et al. Volatile/nonvolatile dual-functional atom transistor. Appl. Phys. Express4, 015204 (2010). ArticleCAS Google Scholar
Xia, Q. et al. Two- and three-terminal resistive switches: Nanometer-scale memristors and memistors. Adv. Funct. Mater.21, 2660–2665 (2011). ArticleCAS Google Scholar
Widrow, B. An adaptive “ADALINE” neuron using chemical “Memistors”. Stanford Electronics Laboratories Technical Report No. 1553–2 (1960). Google Scholar
Xiong, F., Liao, A. D., Estrada, D. & Pop, E. Low-power switching of phase-change materials with carbon nanotube electrodes. Science332, 568–570 (2011). ArticleCAS Google Scholar
Cagli, C. et al. Resistive-switching crossbar memory based on Ni–NiO core–shell nanowires. Small7, 2899–2905 (2011). ArticleCAS Google Scholar
Alibart, F., Gao, L. G., Hoskins, B. D. & Strukov, D. B. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology23, 075201 (2012). ArticleCAS Google Scholar
Strukov, D. B. & Williams, R. S. Exponential ionic drift: fast switching and low volatility of thin-film memristors. Appl. Phys. A94, 515–519 (2009). ArticleCAS Google Scholar
Zhirnov, V. V. et al. Memory devices: Energy-space-time tradeoffs. Proc. IEEE98, 2185–2200 (2010). Article Google Scholar
Zhirnov, V. V., Meade, R., Cavin, R. K. & Sandhu, G. Scaling limits of resistive memories. Nanotechnology22, 254027 (2011). ArticleCAS Google Scholar
Mott, N. F. & Gurney, R. W. Electronic Processes in Ionic Crystals 2nd edn, (Dover, 1940). Google Scholar
Pickett, M. D. et al. Switching dynamics in titanium dioxide memristive devices. J. Appl. Phys.106, 074508 (2009). ArticleCAS Google Scholar
Ielmini, D., Nardi, F. & Balatti, S. Evidence for voltage-driven set/reset processes in bipolar switching RRAM. Electron Devices, IEEE Trans. on59, 2049–2056 (2012). ArticleCAS Google Scholar
Noman, M., Jiang, W., Salvador, P., Skowronski, M. & Bain, J. Computational investigations into the operating window for memristive devices based on homogeneous ionic motion. Appl. Phys. A102, 877–883 (2011). ArticleCAS Google Scholar
Strukov, D. & Williams, R. An ionic bottle for high-speed, long-retention memristive devices. Appl. Phys. A102, 1033–1036 (2011). ArticleCAS Google Scholar
ITRS International Technology Roadmap for Semiconductors, 2011 edn; http://www.itrs.net
Kim, K-H. et al. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett.12, 389–395 (2012). This article experimentally demonstrated 1 Kb hybrid CMOS/memristor passive crossbar memory. ArticleCAS Google Scholar
Kawahara, A. et al. An 8 Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE Int. 432–434 (2012).
Strukov, D. B. & Likharev, K. K. Reconfigurable nano-crossbar architectures, in Nanoelectronics (ed. Waser, R.) (in the press, 2012). Google Scholar
Snider, G. S. & Williams, R. S. Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology18, 035204 (2007). ArticleCAS Google Scholar
Strukov, D. B. & Likharev, K. K. CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices. Nanotechnology16, 888 (2005). ArticleCAS Google Scholar
Kaeriyama, S. et al. A nonvolatile programmable solid-electrolyte nanometer switch. Solid-State Circuits, IEEE Journal of40, 168–176 (2005). Article Google Scholar
Young Yang, L., Zhiping, Z., Wanki, K., Gamal, A. E. & Wong, S. S. Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE Int. 406–408 (2012). Google Scholar
Xia, Q. F. et al. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Lett.9, 3640–3645 (2009). This article experimentally demonstrated 100 nm-gate scale hybrid CMOS/memristor logic. ArticleCAS Google Scholar
Borghetti, J. et al. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature464, 873–876 (2010). ArticleCAS Google Scholar
Holmes, A. J. et al. Use of a-Si:H memory devices for non-volatile weight storage in artificial neural networks. J. Non-Cryst. Solids164–166, Part 2, 817–820 (1993). Article Google Scholar
Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett.10, 1297–1301 (2010). ArticleCAS Google Scholar
Alibart, F. et al. An organic nanoparticle transistor behaving as a biological spiking synapse. Adv. Funct. Mater.20, 330–337 (2010). ArticleCAS Google Scholar
Kuzum, D., Jeyasingh, R. G. D., Lee, B. & Wong, H. S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett.12, 2179–2186 (2012). ArticleCAS Google Scholar
Ohno, T. et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nature Mater.10, 591–595 (2011). ArticleCAS Google Scholar
Likharev, K. K. CrossNets: Neuromorphic hybrid CMOS/nanoelectronic networks. Sci. Adv. Mater.3, 322–331 (2011). ArticleCAS Google Scholar
Strukov, D. B. & Likharev, K. K. Defect-tolerant architectures for nanoelectronic crossbar memories. J. Nanosci. Nanotechnol.7, 151–167 (2007). CAS Google Scholar
Turel, O., Lee, J. H., Ma, X. L. & Likharev, K. K. Neuromorphic architectures for nanoetectronic circuits. Int. J. Circ. Theory App.32, 277–302 (2004). Article Google Scholar
Lee, J. H. & Likharev, K. K. Defect-tolerant nanoelectronic pattern classifiers. Int. J. Circuit Theory and Applications35, 239–264 (2007). Article Google Scholar
Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G. & Williams, R. S. Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology22, 505402 (2011). ArticleCAS Google Scholar
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G. & Williams, R. S. Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology22, 485203 (2011). ArticleCAS Google Scholar
Chen, A. et al. Non-volatile resistive switching for advanced memory applications, in IEEE Int. Electron Devices Meeting 2005, Technical Digest 765–768 (IEEE, 2005). Google Scholar
Yang, J. J. et al. Engineering nonlinearity into memristors for passive crossbar applications. Appl. Phys. Lett.100, 113501 (2012). ArticleCAS Google Scholar
Govoreanu, B. et al. 10 × 10 nm2 Hf/HfO_x_ crossbar resistive RAM with excellent performance, reliability and low-energy operation. Electron Devices Meeting (IEDM), 2011 IEEE Int. 31.36.31–31.36.34 (2011). This article demonstrated functioning memristive devices at the 10 nm scale.
Likharev, K., Mayr, A., Muckra, I. & Türel, Ö. CrossNets: High-performance neuromorphic architectures for CMOL circuits. Ann. NY Acad. Sci.1006, 146–163 (2003). ArticleCAS Google Scholar
Lee, J. et al. Diode-less nano-scale ZrO_x_/HfO_x_ RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications. Tech. Dig. IEEE Int. Electron Devices Meeting, 452–455 (2010).
Kim, G. H. et al. Schottky diode with excellent performance for large integration density of crossbar resistive memory. Appl. Phys. Lett.100, 213508 (2012). ArticleCAS Google Scholar
Puthentheradam, S., Schroder, D. & Kozicki, M. Inherent diode isolation in programmable metallization cell resistive memory elements. Appl. Phys. A102, 817–826 (2011). ArticleCAS Google Scholar
Linn, E., Rosezin, R., Kugeler, C. & Waser, R. Complementary resistive switches for passive nanocrossbar memories. Nature Mater.9, 403–406 (2010). ArticleCAS Google Scholar
Alexandrov, A. S. et al. Current-controlled negative differential resistance due to Joule heating in TiO2 . Appl. Phys. Lett.99, 202104 (2011). ArticleCAS Google Scholar
Liu, X. et al. Diode-less bilayer oxide (WO_x_–NbO_x_) device for cross-point resistive memory applications. Nanotechnology22, 475702 (2011). ArticleCAS Google Scholar
Chang, S. H. et al. Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory. Adv. Mater.23, 4063–4067 (2011). ArticleCAS Google Scholar
Burr, G. W. et al. Large-scale (512 kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield. VLSI Technology (VLSIT), 2012 Symposium on, 41–42 (IEEE, 2012). Chapter Google Scholar
Szot, K. et al. TiO2 — a prototypical memristive material. Nanotechnology22, 254001 (2011). ArticleCAS Google Scholar
Likharev, K. K. Hybrid CMOS/nanoelectronic circuits: Opportunities and challenges. J. Nanoelectron. Optoelectron.3, 203–230 (2008). Article Google Scholar
Strukov, D. B. & Williams, R. S. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Proc. Natl Acad. Sci. USA106, 20155–20158 (2009). ArticleCAS Google Scholar
Dong, X. Y., Xu, C., Xie, Y. & Jouppi, N. P. NVSim: A circuit-level performance, energy, and area model for emerging nonvolatile memory. IEEE Trans. on Computer-Aided Des. Integrated Cir. Sys.31, 994–1007 (2012). Article Google Scholar