Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study (original) (raw)
Georgiev, Vihar P. 
ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore Maria, Ali, Talib Mahmood, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Busche, Christoph ORCID: https://orcid.org/0000-0002-3493-2020, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366(2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study.IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi: 10.1109/TED.2014.2378378)
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Text 103518.pdf - Accepted Version 3MB |
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Abstract
In this brief, we present a multiscale simulation study of a fully depleted silicon-on-insulator (FDSOI) nonvolatile memory cell based on polyoxometalates (POMs) inorganic molecular clusters used as a storage media embedded in the gate dielectric of flash cells. In particular, we focus our discussion on the threshold voltage variability introduced by random discrete dopants (random dopant fluctuation) and by fluctuations in the distribution of the POM molecules in the storage media (POM fluctuation). To highlight the advantages of the FDSOI POM flash cell, we provide a comparison with an equivalent cell based on conventional (BULK) transistors. The presented simulation framework and methodology is transferrable to flash cells based on alternative molecules used as a storage media.
| Item Type: | Articles |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vila-Nadal, Dr Laia and Cronin, Professor Lee and Busche, Dr Christopher and Amoroso, Dr Salvatore and Asenov, Professor Asen and Georgiev, Professor Vihar |
| Authors: | Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of ChemistryCollege of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 0018-9383 |
| Copyright Holders: | Copyright © 2015 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 62(2):680-684 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
| ID Code: | 103518 |
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| Depositing User: | Mrs Louise Annan-Moat |
| Datestamp: | 27 Feb 2015 09:13 |
| Last Modified: | 02 May 2025 05:16 |
| Date of first online publication: | January 2015 |
| Date Deposited: | 16 February 2016 |
| Data Availability Statement: | No |