Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework (original) (raw)

Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366(2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework.Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Abstract

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

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Funder and Project Information

SUPERAID7

Asen Asenov

Asenov, Professor Asen

ENG - Electronics & Nanoscale Engineering

Quantum Simulator for Entangled Electronics (QSEE)

Vihar Georgiev

EP/S001131/1

ENG - Electronics & Nanoscale Engineering

Quantum Electronics Device Modelling (QUANTDEVMOD)

Vihar Georgiev

EP/P009972/1

ENG - Electronics & Nanoscale Engineering

Electrochemically-enabled high-throughput peptidomics for next-generation precision medicine

Vihar Georgiev

862539

ENG - Electronics & Nanoscale Engineering

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