Assessing the impact of process and design variations on reliability of complementary FET (original) (raw)
Dixit, Ankit 
ORCID: https://orcid.org/0000-0002-6653-6460, Kumar, Sandeep, Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, Patil, Deven H., Dasgupta, S., Bagga, Navjeet, Aguinsky, Luiz Felipe ORCID: https://orcid.org/0000-0003-4722-0636 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508(2025) Assessing the impact of process and design variations on reliability of complementary FET.Solid-State Electronics, 230, 109226. (doi: 10.1016/j.sse.2025.109226)
Abstract
This paper comprehensively analyzes the reliability concerns of the Complementary FET (CFET), engrossing the design parameters and the variability effects. The impact of process-induced variabilities, such as random dopant distribution (RDD), line edge roughness (LER), and metal gate granularity (MGG), is extensively studied through well-calibrated TCAD models. Variation aware compact model based statistical analysis is used to analyze 100 random device samples, which shows a significant spread in the IDₛ-VGₛ curve (transfer characteristics). Electrical performance based on the grain size and fin width is also analyzed on both n and p-type device. Therefore, the variation in threshold voltage (Vₜₕ) is used to predict the early aging of the devices.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported in part by the Engineering and Physical Sciences Research Council (EPSRC) under Grant EP/V048341/1 and EP/X5257161/1. |
| Keywords: | Complementary FET, process design, relaibility, random dopant distribution (RDD), line edge roughness (LER), metal gate granularity (MGG). |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Dixit, Mr Ankit and Georgiev, Professor Vihar and Kumar, Dr Naveen and Aguinsky, Dr Luiz Felipe |
| Creator Roles: | Dixit, A.Writing – original draft, Visualization, Investigation, Data curation, ConceptualizationKumar, N.Writing – review and editing, VisualizationAguinsky, L. F.Writing – review and editing, Formal analysisGeorgiev, V.Writing – review and editing, Resources, Funding acquisition, Conceptualization |
| Authors: | Dixit, A., Kumar, S., Kumar, N., Patil, D. H., Dasgupta, S., Bagga, N., Aguinsky, L. F., and Georgiev, V. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Solid-State Electronics |
| Publisher: | Elsevier |
| ISSN: | 0038-1101 |
| ISSN (Online): | 1879-2405 |
| Published Online: | 30 August 2025 |
| Copyright Holders: | Copyright © 2025 The Authors |
| First Published: | First published in Solid-State Electronics 230: 109226 |
| Publisher Policy: | Reproduced under a Creative Commons License |
University Staff: Request a correction | Enlighten Editors: Update this record
Funder and Project Information
Probing the States of Single Molecules for Sensing and Multi-value Memory Applications
Douglas Paul
EP/V048341/1
ENG - Electronics & Nanoscale Engineering
Deposit and Record Details
| ID Code: | 364505 |
|---|---|
| Depositing User: | Ms Gail Annan |
| Datestamp: | 01 Sep 2025 12:48 |
| Last Modified: | 30 Sep 2025 07:18 |
| Date of acceptance: | 26 August 2025 |
| Date of first online publication: | 30 August 2025 |
| Date Deposited: | 1 September 2025 |
| Data Availability Statement: | Yes |