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Number of items: 105.

Kumaresan, Yogeenth ORCID: https://orcid.org/0000-0002-7256-6949, Ma, Sihang and Dahiya, Ravinder ORCID: https://orcid.org/0000-0002-3858-3841(2021)PMMA sacrificial layer based reliable debonding of ultra-thin chips after lapping. Microelectronic Engineering, 247, 111588. (doi: 10.1016/j.mee.2021.111588)

Gupta, Shoubhik, Vilouras, Anastasios ORCID: https://orcid.org/0000-0002-3966-5275 and Dahiya, Ravinder ORCID: https://orcid.org/0000-0002-3858-3841(2020)Polydimethylsiloxane as polymeric protective coating for fabrication of ultra-thin chips. Microelectronic Engineering, 221, 111157. (doi: 10.1016/j.mee.2019.111157)

Panaro, S., Toma, A., Proietti Zaccaria, R., Chirumamilla, M., Saeed, A. ORCID: https://orcid.org/0000-0001-5033-1180, Razzari, L., Das, G., Liberale, C., De Angelis, F. and Di Fabrizio, E.(2016)Design and top-down fabrication of metallic L-shape gap nanoantennas supporting plasmon-polariton modes. Microelectronic Engineering, 111, pp. 91-95. (doi: 10.1016/j.mee.2013.02.014)

Connell, Andrew, Reynolds, Paul M. ORCID: https://orcid.org/0000-0001-7614-0008, Saeed, Anwer ORCID: https://orcid.org/0000-0001-5033-1180 and Gadegaard, Nikolaj ORCID: https://orcid.org/0000-0002-3396-846X(2016)Fabrication of mesoscale topographical gradients in bulk titanium and their use in injection moulding. Microelectronic Engineering, 164, pp. 36-42. (doi: 10.1016/j.mee.2016.07.004)

Hui, Fei, Pan, Chengbin, Shi, Yuanyuan, Ji, Yanfeng, Grustan Gutierrez, Enric ORCID: https://orcid.org/0000-0002-2898-2056 and Lanza, Mario(2016)On the use of two dimensional hexagonal boron nitride as dielectric. Microelectronic Engineering, 163, pp. 119-133. (doi: 10.1016/j.mee.2016.06.015)

Sun, K., Zeimpekis, I., Hu, C. ORCID: https://orcid.org/0000-0003-4031-1340, Ditshego, N.M.J., Thomas, O., de Planque, M.R.R., Chong, H.M.H., Morgan, H. and Ashburn, P.(2016)Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications. Microelectronic Engineering, 153, pp. 96-100. (doi: 10.1016/j.mee.2016.02.016)

Pusino, Vincenzo ORCID: https://orcid.org/0000-0002-2542-1253, Xie, Chengzhi, Khalid, Ata-ul-Habib ORCID: https://orcid.org/0000-0002-4039-8282, Thayne, Iain G. ORCID: https://orcid.org/0000-0002-9197-5393 and Cumming, David R.S. ORCID: https://orcid.org/0000-0002-7838-8362(2016)Development of InSb dry etch for mid-IR applications. Microelectronic Engineering, 153, pp. 11-14. (doi: 10.1016/j.mee.2015.12.014)

Cho, S.J., Roberts, J., Guiney, I., Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2015)A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi: 10.1016/j.mee.2015.04.067)

Kettle, J., Chang, S.-W. and Horie, M.(2015)Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers. Microelectronic Engineering, 146, pp. 105-108. (doi: 10.1016/j.mee.2015.05.006)

Cao, Menglin, Li, Xu ORCID: https://orcid.org/0000-0002-4220-4605, Missous, Mohamed and Thayne, Iain ORCID: https://orcid.org/0000-0002-9197-5393(2015)Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors. Microelectronic Engineering, 140, pp. 56-59. (doi: 10.1016/j.mee.2015.06.003)

Dahiya, Ravinder ORCID: https://orcid.org/0000-0002-3858-3841, Gottardi, Gloria and Laidani, Nadhira(2015)PDMS residues-free micro/macrostructures on flexible substrates. Microelectronic Engineering, 136, pp. 57-62. (doi: 10.1016/j.mee.2015.04.037)

Thoms, Stephen ORCID: https://orcid.org/0000-0001-7820-6023, Macintyre, Douglas S., Docherty, Kevin E. and Weaver, John M.R.(2014)Alignment verification for electron beam lithography. Microelectronic Engineering, 123, pp. 9-12. (doi: 10.1016/j.mee.2014.02.005)

Cao, Menglin, Li, Xu ORCID: https://orcid.org/0000-0002-4220-4605, Ferguson, Susan, Thoms, Stephen ORCID: https://orcid.org/0000-0001-7820-6023, Macintyre, Douglas and Thayne, Iain ORCID: https://orcid.org/0000-0002-9197-5393(2014)A simple silicon compatible 40nm electroplated copper T-gate process. Microelectronic Engineering, 121, pp. 153-155. (doi: 10.1016/j.mee.2014.05.007)

Cho, Sung-Jin, Wang, Cong and Kim, Namyoung(2014)High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimised manufacturing process for Ka-band applications. Microelectronic Engineering, 113, pp. 11-19. (doi: 10.1016/j.mee.2013.07.001)

Greer, Andrew I.M. ORCID: https://orcid.org/0000-0003-2817-5884, Seunarine, Krishna, Khokhar, Ali Z., MacLaren, Ian ORCID: https://orcid.org/0000-0002-5334-3010, Brydone, Alistair S., Moran, David A.J. ORCID: https://orcid.org/0000-0003-4085-7650 and Gadegaard, NIkolaj ORCID: https://orcid.org/0000-0002-3396-846X(2013)Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification. Microelectronic Engineering, 112, pp. 67-73. (doi: 10.1016/j.mee.2013.05.016)

Wang, Cong, Cho, Sung-Jin and Kim, Nam-Young(2013)Comparison of SiO 2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs. Microelectronic Engineering, 109, pp. 24-27. (doi: 10.1016/j.mee.2013.03.059)

Vasiev, I., Greer, A.I.M. ORCID: https://orcid.org/0000-0003-2817-5884, Khokhar, A.Z., Stormonth-Darling, J. ORCID: https://orcid.org/0000-0001-8173-4038, Tanner, K.E. ORCID: https://orcid.org/0000-0003-2257-0218 and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2013)Self-folding nano- and micropatterned hydrogel tissue engineering scaffolds by single step photolithographic process. Microelectronic Engineering, 108, pp. 76-81. (doi: 10.1016/j.mee.2013.04.003)

Toma, A., Das, G., Chirumamilla, M., Saeed, A. ORCID: https://orcid.org/0000-0001-5033-1180, Proietti Zaccaria, R., Razzari, L., Leoncini, M., Liberale, C., De Angelis, F. and Di Fabrizio, E.(2012)Fabrication and characterization of a nanoantenna-based Raman device for ultrasensitive spectroscopic applications. Microelectronic Engineering, 98, pp. 424-427. (doi: 10.1016/j.mee.2012.07.066)

Dahiya, R.S. ORCID: https://orcid.org/0000-0002-3858-3841, Adami, A., Collini, C. and Lorenzelli, L.(2012)Fabrication of single crystal silicon micro-/nanostructures and transferring them to flexible substrates. Microelectronic Engineering, 98, pp. 502-507. (doi: 10.1016/j.mee.2012.07.084)

Khalid, A. ORCID: https://orcid.org/0000-0002-4039-8282, Li, C. ORCID: https://orcid.org/0000-0001-5654-0039, Grant, J. ORCID: https://orcid.org/0000-0003-3562-393X, Saha, S., Ferguson, S. and Cumming, D. ORCID: https://orcid.org/0000-0002-7838-8362(2012)Simple e-beam air-bridge technology for mm-wave applications. Microelectronic Engineering, 98, pp. 262-265. (doi: 10.1016/j.mee.2012.06.006)

Pedersen, R.H., Kustanovich, K. and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2012)Single-step 3D nanolithography using plasma polymerized hexane films. Microelectronic Engineering, 98, pp. 167-170. (doi: 10.1016/j.mee.2012.07.054)

Moran, D.A.J. ORCID: https://orcid.org/0000-0003-4085-7650, MacLaren, D. A. ORCID: https://orcid.org/0000-0003-0641-686X, Porro, S., McLelland, H., John, P. and Wilson, J.I.B.(2011)Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88(8), pp. 2691-2693. (doi: 10.1016/j.mee.2010.11.029)

Thayne, I. ORCID: https://orcid.org/0000-0002-9197-5393, Bentley, S., Holland, M., Jansen, W., Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Macintyre, D., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Shin, B., Ahn, J. and McIntyre, P.(2011)III–V nMOSFETs – some issues associated with roadmap worthiness (invited). Microelectronic Engineering, 88(7), pp. 1070-1075. (doi: 10.1016/j.mee.2011.03.100)

Craven, A., Schaffer, B. and Sarahan, M.(2011)Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack. Microelectronic Engineering, 88(7), pp. 1488-1491. (doi: 10.1016/j.mee.2011.03.084)

Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366(2011)Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)

Benbakhti, B., Kalna, K., Chan, K.H., Towie, E., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366(2011)Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure. Microelectronic Engineering, 88(4), pp. 358-361. (doi: 10.1016/j.mee.2010.11.019)

Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366(2011)Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)

Zhang, Y., Dobson, P. ORCID: https://orcid.org/0000-0001-5137-8298 and Weaver, J.(2011)Batch fabricated dual cantilever resistive probe for scanning thermal microscopy. Microelectronic Engineering, 88(8), pp. 2435-2438. (doi: 10.1016/j.mee.2011.02.040)

Khokhar, A.Z., Gaston, A., Obieta, I. and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2011)Compact LED based nanoimprinter for UV-NIL. Microelectronic Engineering, 88(11), pp. 3347-3352. (doi: 10.1016/j.mee.2011.06.023)

Khokhar, A.Z. et al. (2010)Nanofabrication of gallium nitride photonic crystal light-emitting diodes. Microelectronic Engineering, 87(11), pp. 2200-2207. (doi: 10.1016/j.mee.2010.02.003)

Zhang, Y., Docherty, K.E. and Weaver, J.(2010)Batch fabrication of cantilever array aperture probes for scanning near-field optical microscopy. Microelectronic Engineering, 87(5-8), pp. 1229-1232. (doi: 10.1016/j.mee.2009.11.140)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Zhou, H., Hill, R.J.W., Longo, P., Holland, M. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2010)Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87(5-8), pp. 1587-1589. (doi: 10.1016/j.mee.2009.11.011)

Pedersen, R.H., Hamzah, M., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Roach, P., Alexander, M.R. and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2010)Electron beam lithography using plasma polymerized hexane as resist. Microelectronic Engineering, 87(5-8), pp. 1112-1114. (doi: 10.1016/j.mee.2009.11.043)

Ignatova, O., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Jansen, W., Macintyre, D.S. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2010)Lithography scaling issues associated with III-V MOSFETs. Microelectronic Engineering, 87(5-8), pp. 1049-1051. (doi: 10.1016/j.mee.2009.11.093)

Gaston, A., Khokhar, A.Z., Bilbao, L., Saez-Martinez, V., Corres, A., Obieta, I. and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2010)Nanopatterned UV curable hydrogels for biomedical applications. Microelectronic Engineering, 87(5-8), pp. 1057-1061. (doi: 10.1016/j.mee.2009.11.089)

Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W. ORCID: https://orcid.org/0000-0002-4680-048X, Hill, R., Passlack, M., Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366(2009)Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86(7-9), pp. 1564-1567. (doi: 10.1016/j.mee.2009.03.024)

Vincenc Oboňa, J., de Teresa, J.M., Córdoba, R., Fernández-Pacheco, A. ORCID: https://orcid.org/0000-0002-3862-8472 and Ibarra, M.R.(2009)Creation of stable nanoconstrictions in metallic thin films via progressive narrowing by focused-ion-beam technique and in situ control of resistance. Microelectronic Engineering, 86(4-6), pp. 639-641. (doi: 10.1016/j.mee.2009.01.075)

Cleary, A., Clark, A. ORCID: https://orcid.org/0000-0001-9797-5776, Glidle, A., Cooper, J.M. ORCID: https://orcid.org/0000-0002-2358-1050 and Cumming, D.R.S. ORCID: https://orcid.org/0000-0002-7838-8362(2009)Fabrication of double split metallic nanorings for Raman sensing. Microelectronic Engineering, 86(4-6), pp. 1146-1149. (doi: 10.1016/j.mee.2009.02.008)

Bentley, S., Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Moran, D.A.J. ORCID: https://orcid.org/0000-0003-4085-7650 and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2009)Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86(4-6), pp. 1067-1070. (doi: 10.1016/j.mee.2008.12.029)

Holland, M., Longo, Paolo, Paterson, G.W. ORCID: https://orcid.org/0000-0002-4680-048X, Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 and Gregory, R.(2009)Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi: 10.1016/j.mee.2008.01.043)

Blanco-Gomez, G., Glidle, A., Flendrig, L.M. and Cooper, J.M. ORCID: https://orcid.org/0000-0002-2358-1050(2009)Creation of super-hydrophobic siloxane-modified SU-8 microstuctures. Microelectronic Engineering, 86(4-6), pp. 1325-1328. (doi: 10.1016/j.mee.2008.11.069)

Docherty, K., Lister, K.A., Romijn, J. and Weaver, J.M.R.(2009)High robustness of correlation-based alignment with Penrose patterns to marker damage in electron beam lithography. Microelectronic Engineering, 86(4-6), pp. 532-534. (doi: 10.1016/j.mee.2008.11.037)

Oxland, R.K., Long, A.R. and Rahman, F.(2009)Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi: 10.1016/j.mee.2009.05.007)

Shi, X.H., Cleary, A., Khalid, A. ORCID: https://orcid.org/0000-0002-4039-8282 and Cumming, D.R.S.(2009)Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots. Microelectronic Engineering, 86(4-6), pp. 1111-1113. (doi: 10.1016/j.mee.2008.12.070)

Longo, P., Craven, A.J., Holland, M.C., Moran, D.A.J. ORCID: https://orcid.org/0000-0003-4085-7650 and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2009)A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices. Microelectronic Engineering, 86(3), pp. 214-217. (doi: 10.1016/j.mee.2008.08.013)

Longo, P., Paterson, G.W ORCID: https://orcid.org/0000-0002-4680-048X, Holland, M.C., Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 and Craven, A.J.(2009)A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices. Microelectronic Engineering, 86(7-9), pp. 1568-1570. (doi: 10.1016/j.mee.2009.03.131)

Jugessur, A.S., Dou, J., Aitchison, J.S., De La Rue, R.M. ORCID: https://orcid.org/0000-0001-9544-0647 and Gnan, M(2009)A photonic nano-Bragg grating device integrated with microfluidic channels for bio-sensing applications. Microelectronic Engineering, 86(4-6), pp. 1488-1490. (doi: 10.1016/j.mee.2008.12.002)

Kong, X., Krasa, D., Zhou, H. P., Williams, W., McVitie, S. ORCID: https://orcid.org/0000-0003-4511-6413, Weaver, J. M. R. and Wilkinson, C. D. W.(2008)Very high resolution etching of magnetic nanostructures in organic gases. Microelectronic Engineering, 85(5-6), pp. 988-991. (doi: 10.1016/j.mee.2007.12.006)

Burt, D. P., Dobson, P. S. ORCID: https://orcid.org/0000-0001-5137-8298, Donaldson, L. and Weaver, J. M. R.(2008)A simple method for high yield fabrication of sharp silicon tips. Microelectronic Engineering, 85(3), pp. 625-630. (doi: 10.1016/j.mee.2007.11.010)

Docherty, F.T. ORCID: https://orcid.org/0000-0001-9897-9939, MacKenzie, M., Craven, A.J., McComb, D.W., De Gendt, S., McFadzean, S. and McGilvery, C.M.(2008)A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon. Microelectronic Engineering, 85(1), pp. 61-64. (doi: 10.1016/j.mee.2007.03.001)

Seunarine, K., Meredith, D.O., Riehle, M.O. ORCID: https://orcid.org/0000-0001-7988-1514, Wilkinson, C.D.W. and Gadegaard, N. ORCID: https://orcid.org/0000-0002-3396-846X(2008)Biodegradable polymer tubes with litho graphically controlled 3D micro- and nanotopography. Microelectronic Engineering, 85(5-6), pp. 1350-1354. (doi: 10.1016/j.mee.2008.02.002)

Bentley, S., Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Moran, D. A. J. ORCID: https://orcid.org/0000-0003-4085-7650 and Thayne, I. G. ORCID: https://orcid.org/0000-0002-9197-5393(2008)Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85(5-6), pp. 1375-1378. (doi: 10.1016/j.mee.2008.01.058)

Kettle, J., Hoyle, R.T., Dimov, S. and Perks, R.M.(2008)Fabrication of complex 3D structures using Step and Flash Imprint Lithography (S-FIL). Microelectronic Engineering, 85(5-6), pp. 853-855. (doi: 10.1016/j.mee.2007.12.003)

Docherty, K.E., Thoms, S., Dobson, P.M. ORCID: https://orcid.org/0000-0001-5137-8298 and Weaver, J.M.R.(2008)Improvements to the alignment process in a commercial vector scan electron beam lithography tool. Microelectronic Engineering, 85(5-6), pp. 761-763. (doi: 10.1016/j.mee.2008.01.081)

Docherty, K.E., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Dobson, P. ORCID: https://orcid.org/0000-0001-5137-8298 and Weaver, J.M.R.(2008)Improvements to the alignment process in a commercial vector scan electron beam lithography tool. Microelectronic Engineering, 85(5-6), pp. 761-763. (doi: 10.1016/j.mee.2008.01.081)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Zhou, H.P., Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2008)Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods. Microelectronic Engineering, 85(5-6), pp. 966-968. (doi: 10.1016/j.mee.2007.12.056)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Hill, R.J.W., Zhou, H P., Wilkinson, C.D.W. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2008)A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs. Microelectronic Engineering, 85(5-6), pp. 996-999. (doi: 10.1016/j.mee.2007.12.064)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Zhou, H., Hill, R.J.W., Wilkinson, C.D.W and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2007)Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs. Microelectronic Engineering, 84(5-8), pp. 1124-1127. (doi: 10.1016/j.mee.2007.01.045)

De Teresa, J.M., Fernandez-Pacheco, Amalio ORCID: https://orcid.org/0000-0002-3862-8472, Morellon, L., Orna, J., Pardo, J.A., Serrate, D., Algarabel, P.A. and Ibarra, M.R.(2007)Magnetotransport properties of Fe3O4 thin films for applications in spin electronics. Microelectronic Engineering, 84(5-8), pp. 1660-1664. (doi: 10.1016/j.mee.2007.01.120)

Kalna, K, Droopad, R, Passlack, M and Asenov, A(2007)Monte Carlo simulations of InGaAs nano-MOSFETs. Microelectronic Engineering, 84, pp. 2150-2153. (doi: 10.1016/j.mee.2007.04.011)

Asenov, A, Kalna, K, Thayne, I and Hill, RJW(2007)Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. Microelectronic Engineering, 84, pp. 2398-2403. (doi: 10.1016/j.mee.2007.04.117)

Thoms, S and Macintyre, DS(2007)Tilt-corrected stitching for electron beam lithography. Microelectronic Engineering, 84, pp. 793-796. (doi: 10.1016/j.mee.2007.01.127)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S, Macintyre, D., Holland, M. and Thayne, IG(2006)30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83, pp. 1152-1154. (doi: 10.1016/j.mee.2006.01.073)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Macintyre, D.S., Holland, M.C. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2006)30 nm tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83(4-9), pp. 1152-1154. (doi: 10.1016/j.mee.2006.01.073)

Gadegaard, N, Martines, E, Riehle, MO ORCID: https://orcid.org/0000-0001-7988-1514, Seunarine, K and Wilkinson, CDW(2006)Applications of nano-patterning to tissue engineering. Microelectronic Engineering, 83, pp. 1577-1581. (doi: 10.1016/j.mee.2006.01.147)

Macintyre, D.S., Young, I., Glidle, A., Cao, X., Weaver, J.M.R. and Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023(2006)High resolution e-beam lithography using a thin titanium layer to promote resist adhesion. Microelectronic Engineering, 83(4-9), pp. 1128-1131. (doi: 10.1016/j.mee.2006.01.103)

Tanner, M.G., Hasko, D.G. and Williams, D.A.(2006)Investigation of silicon isolated double quantum-dot energy levels for quantum computation. Microelectronic Engineering, 83(4-9), pp. 1818-1822. (doi: 10.1016/j.mee.2006.01.174)

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D., Holland, M. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2006)A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates. Microelectronic Engineering, 83(4-9), pp. 1159-1162. (doi: 10.1016/j.mee.2006.01.074)

MacIntyre, DS and Thoms, S(2006)Nanometre scale overlay and stitch metrology using an optical microscope. Microelectronic Engineering, 83, pp. 1051-1054. (doi: 10.1016/j.mee.2006.01.022)

Seunarine, K, Gadegaard, N, Riehle, M.O. ORCID: https://orcid.org/0000-0001-7988-1514 and Wilkinson, CDW(2006)Optical heating for short hot embossing cycle times. Microelectronic Engineering, 83, pp. 859-863. (doi: 10.1016/j.mee.2005.12.026)

Craven, A.J., MacKenzie, M., McComb, D.W. and Docherty, F.T. ORCID: https://orcid.org/0000-0001-9897-9939(2005)Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy. Microelectronic Engineering, 80, pp. 90-97. (doi: 10.1016/j.mee.2005.04.048)

Tanner, M.G., Emiroglu, E.G., Hasko, D.G. and Williams, D.A.(2005)Geometry dependence of the energy levels in silicon isolated double quantum-dots. Microelectronic Engineering, 78-79, pp. 195-200. (doi: 10.1016/j.mee.2005.01.001)

Pearson, JL and Cumming, DRS(2005)A single-step process for making nanofluidic channels using electron beam lithography. Microelectronic Engineering, 78-79, pp. 343-348. (doi: 10.1016/j.mee.2004.12.045)

Macintyre, DS and Thoms, S(2005)A study of resist flow during nanoimprint lithography. Microelectronic Engineering, 78-79, pp. 670-675. (doi: 10.1016/j.mee.2004.12.083)

Li, Xu ORCID: https://orcid.org/0000-0002-4220-4605, Elgaid, K., McLelland, H. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2005)Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79, pp. 233-238. (doi: 10.1016/j.mee.2004.12.032)

Yin, H.B. ORCID: https://orcid.org/0000-0001-7693-377X, Brown, T., Greef, R., Wilkinson, J.S. and Melvin, T.(2004)Chemical modification and micropatterning of Si(1 0 0) with oligonucleotides. Microelectronic Engineering, 73-74, pp. 830-836. (doi: 10.1016/j.mee.2004.03.060)

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C.R. and Thayne, I.G.(2004)Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74, pp. 818-821. (doi: 10.1016/j.mee.2004.03.058)

Elgaid, K., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G.(2004)Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4, pp. 452-455. (doi: 10.1016/j.mee.2004.03.016)

Hammond, PA and Cumming, DRS(2004)Encapsulation of a liquid-sensing microchip using SU-8 photoresist. Microelectronic Engineering, 73-4, pp. 893-897. (doi: 10.1016/j.mee.2004.03.071)

Lister, KA, Casey, BG, Dobson, PS, Thoms, S, Macintyre, DS, Wilkinson, CDW and Weaver, JMR(2004)Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond. Microelectronic Engineering, 73-4, pp. 319-322. (doi: 10.1016/j.mee.2004.02.060)

Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R. and Thayne, I.G.(2004)Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74, pp. 814-817. (doi: 10.1016/j.mee.2004.03.057)

Moran, DAJ, Boyd, E, Elgaid, K, McEwan, F, McLelland, H, Stanley, CR and Thayne, IG(2004)Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi: 10.1016/j.mee.2004.03.057)

Drysdale, TD, Mills, G, Ferguson, SM, Blaikie, RJ and Cumming, DRS(2004)Terahertz tuneable filters made by self-releasing deep dry etch process. Microelectronic Engineering, 73-4, pp. 441-446. (doi: 10.1016/j.mee.2004.03.014)

Blaikie, RJ, Drysdale, TD, Chong, HMH, Thayne, IG and Cumming, DRS(2004)Wide-field-of-view photonic bandgap filters micromachined from silicon. Microelectronic Engineering, 73-4, pp. 357-361. (doi: 10.1016/j.mee.2004.02.069)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R. and Thayne, I.G.(2003)Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89, pp. 769-774. (doi: 10.1016/S0167-9317(03)00137-0)

Lam, K.H. ORCID: https://orcid.org/0000-0003-1456-9049, Chan, H.L.W., Luo, H.S., Yin, Q.R., Yin, Z.W. and Choy, C.L.(2003)Dielectric properties of 65PMN-35PT/P(VDF-TrFE) 0-3 composites. Microelectronic Engineering, 66(1-4), pp. 792-797. (doi: 10.1016/S0167-9317(02)01001-8)

Gadegaard, N ORCID: https://orcid.org/0000-0002-3396-846X, Thoms, S, Macintyre, DS, Mcghee, K, Gallagher, J, Casey, B and Wilkinson, CDW(2003)Arrays of nano-dots for cellular engineering. Microelectronic Engineering, 67-8, pp. 162-168. (doi: 10.1016/S0167-9317(03)00067-4)

Chen, Y, Macintyre, DS, Boyd, E, Moran, D, Thayne, I and Thoms, S(2003)High electron mobility transistors fabricated by nanoimprint lithography. Microelectronic Engineering, 67-8, pp. 189-195. (doi: 10.1016/S0167-9317(03)00183-7)

Elgaid, K, McCloy, DA and Thayne, IG(2003)Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering, 67-8, pp. 417-421. (doi: 10.1016/S0167-9317(03)00188-6)

Chen, Y, Macintyre, DS and Thoms, S(2003)A non-destructive method for the removal of residual resist in imprinted patterns. Microelectronic Engineering, 67-8, pp. 245-251. (doi: 10.1016/S0167-9317(03)00184-9)

Cao, X and Thayne, I(2003)Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs. Microelectronic Engineering, 67-8, pp. 333-337. (doi: 10.1016/S0167-9317(03)00087-X)

Waghmare, Parag C., Patil, Samadhan B. ORCID: https://orcid.org/0000-0002-3697-0725, Kumbhar, Alka, Dusane, R.O. and Rao, V.Ramgopal(2002)Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies. Microelectronic Engineering, 61-62, pp. 625-629. (doi: 10.1016/S0167-9317(02)00575-0)

Barker, JR(2002)Normal vortex states and their application in mesoscopic semiconductor devices. Microelectronic Engineering, 63, pp. 223-231.

Barker, JR and Watling, JR(2002)Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach. Microelectronic Engineering, 63, pp. 97-103.

Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Elgaid, K., McLelland, H. and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393(2001)Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58, pp. 633-640. (doi: 10.1016/S0167-9317(01)00495-6)

Thayne, I(2001)Fabrication of on-wafer MMIC compatible integrated NiCr loads. Microelectronic Engineering, 57-58, pp. 801-806.

Kundrotaite, A., Rahman, M., Aitchison, P.R. and Chapman, J.N.(2001)Interactions in magnetic arrays for storage and computation. Microelectronic Engineering, 57-58, 975 -979. (doi: 10.1016/S0167-9317(01)00561-5)

Thoms, S(2001)T-gate fabrication using a ZEP520A/UVIII bilayer. Microelectronic Engineering, 57-58, pp. 939-943.

Dunford, R.B., Ahmed, A., Paul, D.J. ORCID: https://orcid.org/0000-0001-7402-8530, Pepper, M., Churchill, A.C., Robbins, D.J. and Pidduck, A.J.(2000)Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures. Microelectronic Engineering, 53(1-4), pp. 205-208. (doi: 10.1016/S0167-9317(00)00297-5)

Dunford, R.B., Paul, D.J. ORCID: https://orcid.org/0000-0001-7402-8530, Pepper, M., Coonan, B., Griffin, N., Redmond, G., Crean, G.M., Hollander, B. and Mantl, S.(2000)Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process. Microelectronic Engineering, 53(1-4), pp. 209-212. (doi: 10.1016/S0167-9317(00)00298-7)

Schulze, Th., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S. ORCID: https://orcid.org/0000-0003-1523-0821, Pfau, T. and Mlynek, J.(1999)Sub-100 nm structures by neutral atom lithography. Microelectronic Engineering, 46(1-4), pp. 105-108. (doi: 10.1016/S0167-9317(99)00026-X)

Bell, A.S. ORCID: https://orcid.org/0000-0003-1523-0821, Pfau, T., Drodofsky, U., Stuhler, J., Schulze, Th., Brezger, B., Nowak, S. and Mlynek, J.(1998)Atomic lithography. Microelectronic Engineering, 41-42, pp. 587-590. (doi: 10.1016/S0167-9317(98)00138-5)

Paul, D.J. ORCID: https://orcid.org/0000-0001-7402-8530, Ryan, J.M., Pepper, M., Broers, A.N., Whall, T.E., Fernandez, J.M. and Joyce, B.A.(1997)Electron beam induced damage of silicon germanium. Microelectronic Engineering, 35(1-4), pp. 59-62. (doi: 10.1016/S0167-9317(96)00147-5)

Griffin, N., Paul, D.J. ORCID: https://orcid.org/0000-0001-7402-8530, Pepper, M., Taylor, S., Smith, J.P., Eccleston, W., Fernandez, J.M. and Joyce, B.A.(1997)Gating high mobility silicon-germanium heterostructures. Microelectronic Engineering, 35(1-4), pp. 309-312. (doi: 10.1016/S0167-9317(96)00137-2)

Paul, D..J. ORCID: https://orcid.org/0000-0001-7402-8530, Cleaver, J.R.A. and Ahmed, H.(1993)Fabrication of wires in silicon germanium material. Microelectronic Engineering, 21(1), 349 - 352. (doi: 10.1016/0167-9317(93)90089-N)

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