Conor Rafferty | IEEE - Academia.edu (original) (raw)

Papers by Conor Rafferty

MRS Bulletin, 2000

... Silicon Processing Nicholas Cowern and Conor Rafferty ... Thus improved insight into the mate... more ... Silicon Processing Nicholas Cowern and Conor Rafferty ... Thus improved insight into the materials science of defects and diffusion in silicon leads directly to improved device and circuit performance. References 1. PM Fahey, PB Griffin, and JD Plummer, Rev. Mod. Phys. ...

Electrical Engineering Handbook, 1997

Essderc 94 24th European Solid State Device Research Conference, Sep 1, 1994

The 1998 international conference on characterization and metrology for ULSI technology, 1998

Predicting impurity profiles after diffusion is a key step in process design for deep submicron i... more Predicting impurity profiles after diffusion is a key step in process design for deep submicron integrated circuits. Recent technology trends give rise to strong anomalous diffusion effects arising from implantation damage. Present models describe such effects at high energy but require improvement for shallow implants.

Electron Devices Meeting, 1990. IEDM …, 1990

A Viscous Nitride Model for Nitride/Oxide Isolation Structures PB Griffin* and CS Rqfferty* +Cent... more A Viscous Nitride Model for Nitride/Oxide Isolation Structures PB Griffin* and CS Rqfferty* +Center for Integrated Systems, Stanford University, Stanford, CA 94305 •AT&T Bell Laboratories, Murray Hill, NJ 07974 ... [11] KY Chiu, R.Fang, J.Lin, JL Moll, C. Lage, S. Ange-los and R ...

Applied Physics Letters, 1996

2000 5th International Symposium on Antennas, Propagation, and EM Theory. ISAPE 2000 (IEEE Cat. No.00EX417), 2000

A large signal analysis of on-chip interconnects is presented. A set of nonlinear equations combi... more A large signal analysis of on-chip interconnects is presented. A set of nonlinear equations combining the motion equations of charge carriers and Maxwell's equations is devised in the frequency domain for the fundamental mode and harmonics and then solved by the finite element method and Newton's iterations. This analysis provides knowledge of the field-carrier interaction, substrate nonlinearity and loss, slow-wave effect, etc. Numerical examples are provided for some practical material and geometrical parameters

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2000

Ieee Transactions on Electron Devices, Oct 1, 1985

This paper examines iterative methods for solving the semiconductor device equations. The emphasi... more This paper examines iterative methods for solving the semiconductor device equations. The emphasis is on fully coupled methods, because of the failure of decoupled methods for on-state devices. Using the PISCES-II device simulator as a vehicle, incomplete factorization and operator decomposition iterative methods are presented for solving the Newton equations. The dependencies of these methods on factors such as choice of variables, bias condition and initial guess are analyzed. The results are compared with sparse Gaussian elimination.

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 1997

International Electron Devices Meeting, 1984

Although intrinsic effects have been successfully modeled using computer analysis, the capability... more Although intrinsic effects have been successfully modeled using computer analysis, the capability to characterize and predict extrinsic effects has lagged behind. Scaling of VLSI now requires coordinated analysis of all resistive, capacitive, and parasitic devices-especially those associated with isolation and CMOS well structures. This paper addresses the problem of intrinsic devices imbedded in a complete technology framework including parasitics. Results

... When the models are modified to conform to these heuristics, TR-BDF2 provides a very robust t... more ... When the models are modified to conform to these heuristics, TR-BDF2 provides a very robust temporal ... and a complementary (DARPA-funded) project with UT Austin, device simulation capabilities for steady state analysis using the ... During the process of implementation, much ...

We investigate the density-gradient (DG) transport model for efficient multi-dimensional sim- ula... more We investigate the density-gradient (DG) transport model for efficient multi-dimensional sim- ulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum con- finement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capaci- tors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum con- finement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-grad...

Proceedings of IEEE International Electron Devices Meeting, 1993

Reverse short channel effect (RSCE), the paradoxical increase in threshold voltage (Vt) of short ... more Reverse short channel effect (RSCE), the paradoxical increase in threshold voltage (Vt) of short channel MOSFETs, has previously been explained by diffusion broadening of a buried channel profile. We report here on RSCE in transistors which have very shallow or flat channel profiles, where such broadening cannot be the mechanism. It is shown that for several different dopings and process