Bohan Lin - Academia.edu (original) (raw)
Related Authors
Vienna Wiesenthal Institute for Holocaust Studies
Uploads
Papers by Bohan Lin
IEEE Journal of the Electron Devices Society, 2020
Physically unclonable function (PUF) and true random number generator (TRNG) are critical primiti... more Physically unclonable function (PUF) and true random number generator (TRNG) are critical primitives to provide lightweight hardware protection. As area is tightly restricted in IoT applications, merging PUF and TRNG is a novel trend to achieve higher area efficiency. In this work, a novel tri-functional module is proposed and experimental demonstrated using RRAM for the first time. A twophase forming process is designed to generate and store PUF ID utilizing the impact of different forming conditions on the switching window. As PUF ID is stored by the switching window, instead of a fixed resistance, PUF cells can be written to low resistance state and high resistance state as usual, and can be used as memory and TRNG. The inter-Hamming distance of the generated PUF IDs approaches 0.5, and with the majority voting readout strategy, low BER can be achieved in a wide range of temperatures from −40 • C to 125 • C. TRNG produces the true random numbers based on the parity of the number of pulses consumed in a write-zero process. The generated random numbers are uniform and uncorrelated after XORed, and the statistical randomness is verified by NIST SP800-22 tests.
IEEE Journal of the Electron Devices Society, 2020
Physically unclonable function (PUF) and true random number generator (TRNG) are critical primiti... more Physically unclonable function (PUF) and true random number generator (TRNG) are critical primitives to provide lightweight hardware protection. As area is tightly restricted in IoT applications, merging PUF and TRNG is a novel trend to achieve higher area efficiency. In this work, a novel tri-functional module is proposed and experimental demonstrated using RRAM for the first time. A twophase forming process is designed to generate and store PUF ID utilizing the impact of different forming conditions on the switching window. As PUF ID is stored by the switching window, instead of a fixed resistance, PUF cells can be written to low resistance state and high resistance state as usual, and can be used as memory and TRNG. The inter-Hamming distance of the generated PUF IDs approaches 0.5, and with the majority voting readout strategy, low BER can be achieved in a wide range of temperatures from −40 • C to 125 • C. TRNG produces the true random numbers based on the parity of the number of pulses consumed in a write-zero process. The generated random numbers are uniform and uncorrelated after XORed, and the statistical randomness is verified by NIST SP800-22 tests.