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Papers by Cécile D'Anterroches

Research paper thumbnail of George Ist d'Amboise humanist : the stalls of the castle of Gaillon, dialogue of sibyls and virtues

Le cardinal Georges Ier d’Amboise est connu pour ses fonctions cléricales et politiques. Lorsqu’i... more Le cardinal Georges Ier d’Amboise est connu pour ses fonctions cléricales et politiques. Lorsqu’il eut atteint le faîte de sa gloire, en réunissant les fonctions apostoliques, de légat en France et en Avignon, et politique, de premier conseiller du roi Louis XII, il fit construire à Gaillon un splendide palais privé, au sein duquel il fit édifier plusieurs chapelles. Un ensemble de stalles a été construit, entre 1509 et 1518, pour la chapelle haute dont l’abside se superpose exactement à celle de la chapelle basse. Ces stalles sont conservées dans la basilique Saint-Denis, et sont la seule œuvre, parmi celles que le cardinal a commandées, qui nous soit parvenue dans une intégrité pratiquement totale. À l’image du château de Gaillon elles présentent une mixité de style propre à leur époque, alliant avec bonheur les vocabulaires gothiques et antiques. Des artisans italiens sont venus en 1509 sur le chantier, ils ont créé les panneaux de marqueterie. Parmi eux était Giovanni Barili qui...

Research paper thumbnail of Georges 1er d'Amboise humaniste : les stalles du château de Gaillon, dialogue des sibylles et des vertus

Research paper thumbnail of High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)

Surface Science, 1986

Very thin hlms ot Sfllclde have been obtained by thermal reaction o1 4(I A thick Co layers deposi... more Very thin hlms ot Sfllclde have been obtained by thermal reaction o1 4(I A thick Co layers deposited onto SI(111) substrates Plateaus in the Auger peak variation have been explained b~ the evolution ot the sampled region from the Co metalhc phase to successively Co2SI, CoSI and CoSI 2 phases Samples coming trom the four stages have been analysed mainly using high-resolution electron mlt.roscopy In fact the results show that the so-called Co Co2SI and CoSJ phases are m~xtures ot the three, the proportions being different The results also suggest that the dlslhclde growth is initiated b~ an epltaxlal CoSi layer lormed by Co diffusion |ollowt_d bv tormatlon ot a textured sdlclde layer through $1 dlt|uslon In the terminal phase the CoSI,/SI interlace is well dehned but rough

Research paper thumbnail of Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

Microscopy Microanalysis Microstructures, 1992

Research paper thumbnail of Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopy

Thin Solid Films, 1986

... These two techniques have been used successfully by Saitoh et al:' and Bean and Poat... more ... These two techniques have been used successfully by Saitoh et al:' and Bean and Poate2 to obtain SMS structures. ... Bean and Poate grew a layer of COSi2 65 nm thick on substrates heated to 600 C and then an epitaxial silicon layer 120 nm thick. ...

Research paper thumbnail of Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Journal of Crystal Growth, 1993

We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolut... more We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the ...

Research paper thumbnail of Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale

Journal of Crystal Growth, 1995

Segregation processes entail severe deviations from the nominal composition profiles of heterostr... more Segregation processes entail severe deviations from the nominal composition profiles of heterostructures grown by molecular beam epitaxy for most semiconductor systems. It is, however, possible to compensate

Research paper thumbnail of Optical investigation of the band structure of InAs/GaAs short-period superlattices

Applied Physics Letters, 1989

We discuss optical data obtained on (InAs/GaAs)-InGaAlAs multiquantum well structures grown by mo... more We discuss optical data obtained on (InAs/GaAs)-InGaAlAs multiquantum well structures grown by molecular beam epitaxy. The combined use of photoluminescence and photoluminescence excitation to study such structures is an efficient test of the quality of the highly strained InAs/GaAs ordered alloy, which is used as the well material. The electron effective mass and the lifting of the valence-band degeneracy in InAs/GaAs short-period superlattices are obtained experimentally for the first time.

Research paper thumbnail of Co/Si(111) interface formation at room temperature

Physical Review B, 1987

Using the Auger line shape of Co atoms adsorbed on Si(111) at room temperature, we have been able... more Using the Auger line shape of Co atoms adsorbed on Si(111) at room temperature, we have been able to deduce detailed information on the development of the Co/Si interface which shows the initial formation of a boundary CoSi&-like phase. Simulation of these Auger lines within the Cini-Sawatzky theoretical scheme allows one to estimate the effective Coulomb interaction U,~of the final two-hole state in the Auger process for bulk Co and cobalt silicides. Finally, in order to confirm these spectroscopic results, lattice-imaging micrographs directly suggest the presence of an interfacial CoSi~layer.

Research paper thumbnail of Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale

Journal of Crystal Growth, 1995

processes entail severe deviations from the nominal composition profiles of heterostructures grow... more processes entail severe deviations from the nominal composition profiles of heterostructures grown by molecular beam epitaxy for most semiconductor systems. It is, however, possible to compensate

Research paper thumbnail of Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Journal of Crystal Growth, 1993

We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolut... more We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the ...

Research paper thumbnail of George Ist d'Amboise humanist : the stalls of the castle of Gaillon, dialogue of sibyls and virtues

Le cardinal Georges Ier d’Amboise est connu pour ses fonctions cléricales et politiques. Lorsqu’i... more Le cardinal Georges Ier d’Amboise est connu pour ses fonctions cléricales et politiques. Lorsqu’il eut atteint le faîte de sa gloire, en réunissant les fonctions apostoliques, de légat en France et en Avignon, et politique, de premier conseiller du roi Louis XII, il fit construire à Gaillon un splendide palais privé, au sein duquel il fit édifier plusieurs chapelles. Un ensemble de stalles a été construit, entre 1509 et 1518, pour la chapelle haute dont l’abside se superpose exactement à celle de la chapelle basse. Ces stalles sont conservées dans la basilique Saint-Denis, et sont la seule œuvre, parmi celles que le cardinal a commandées, qui nous soit parvenue dans une intégrité pratiquement totale. À l’image du château de Gaillon elles présentent une mixité de style propre à leur époque, alliant avec bonheur les vocabulaires gothiques et antiques. Des artisans italiens sont venus en 1509 sur le chantier, ils ont créé les panneaux de marqueterie. Parmi eux était Giovanni Barili qui...

Research paper thumbnail of Georges 1er d'Amboise humaniste : les stalles du château de Gaillon, dialogue des sibylles et des vertus

Research paper thumbnail of High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)

Surface Science, 1986

Very thin hlms ot Sfllclde have been obtained by thermal reaction o1 4(I A thick Co layers deposi... more Very thin hlms ot Sfllclde have been obtained by thermal reaction o1 4(I A thick Co layers deposited onto SI(111) substrates Plateaus in the Auger peak variation have been explained b~ the evolution ot the sampled region from the Co metalhc phase to successively Co2SI, CoSI and CoSI 2 phases Samples coming trom the four stages have been analysed mainly using high-resolution electron mlt.roscopy In fact the results show that the so-called Co Co2SI and CoSJ phases are m~xtures ot the three, the proportions being different The results also suggest that the dlslhclde growth is initiated b~ an epltaxlal CoSi layer lormed by Co diffusion |ollowt_d bv tormatlon ot a textured sdlclde layer through $1 dlt|uslon In the terminal phase the CoSI,/SI interlace is well dehned but rough

Research paper thumbnail of Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

Microscopy Microanalysis Microstructures, 1992

Research paper thumbnail of Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopy

Thin Solid Films, 1986

... These two techniques have been used successfully by Saitoh et al:' and Bean and Poat... more ... These two techniques have been used successfully by Saitoh et al:' and Bean and Poate2 to obtain SMS structures. ... Bean and Poate grew a layer of COSi2 65 nm thick on substrates heated to 600 C and then an epitaxial silicon layer 120 nm thick. ...

Research paper thumbnail of Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Journal of Crystal Growth, 1993

We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolut... more We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the ...

Research paper thumbnail of Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale

Journal of Crystal Growth, 1995

Segregation processes entail severe deviations from the nominal composition profiles of heterostr... more Segregation processes entail severe deviations from the nominal composition profiles of heterostructures grown by molecular beam epitaxy for most semiconductor systems. It is, however, possible to compensate

Research paper thumbnail of Optical investigation of the band structure of InAs/GaAs short-period superlattices

Applied Physics Letters, 1989

We discuss optical data obtained on (InAs/GaAs)-InGaAlAs multiquantum well structures grown by mo... more We discuss optical data obtained on (InAs/GaAs)-InGaAlAs multiquantum well structures grown by molecular beam epitaxy. The combined use of photoluminescence and photoluminescence excitation to study such structures is an efficient test of the quality of the highly strained InAs/GaAs ordered alloy, which is used as the well material. The electron effective mass and the lifting of the valence-band degeneracy in InAs/GaAs short-period superlattices are obtained experimentally for the first time.

Research paper thumbnail of Co/Si(111) interface formation at room temperature

Physical Review B, 1987

Using the Auger line shape of Co atoms adsorbed on Si(111) at room temperature, we have been able... more Using the Auger line shape of Co atoms adsorbed on Si(111) at room temperature, we have been able to deduce detailed information on the development of the Co/Si interface which shows the initial formation of a boundary CoSi&-like phase. Simulation of these Auger lines within the Cini-Sawatzky theoretical scheme allows one to estimate the effective Coulomb interaction U,~of the final two-hole state in the Auger process for bulk Co and cobalt silicides. Finally, in order to confirm these spectroscopic results, lattice-imaging micrographs directly suggest the presence of an interfacial CoSi~layer.

Research paper thumbnail of Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale

Journal of Crystal Growth, 1995

processes entail severe deviations from the nominal composition profiles of heterostructures grow... more processes entail severe deviations from the nominal composition profiles of heterostructures grown by molecular beam epitaxy for most semiconductor systems. It is, however, possible to compensate

Research paper thumbnail of Monolayer scale study of segregation effects in InAs/GaAs heterostructures

Journal of Crystal Growth, 1993

We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolut... more We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the ...