C. Wyon - Academia.edu (original) (raw)

Papers by C. Wyon

Bourvon et al.: On the way to wafer-level quantum dot light-emitting diodes

ECS Meeting Abstracts, 2009

not Available.

Mr. Ryan Ross 1, Marc De la Bardonnie 2, Magali Lamy 3, Khiem Ly 1, Frederic Lorut 3, Christophe ... more Mr. Ryan Ross 1, Marc De la Bardonnie 2, Magali Lamy 3, Khiem Ly 1, Frederic Lorut 3, Christophe Wyon 4 and Laurens Kwakman 2, 1 Freescale Semiconductor, 870, Rue Jean Monnet, Crolles, 38926, France, 2 Philips Semiconductors, 860, Rue Jean Monnet, ...

Advanced Solid State Lasers, 1991

With the Er3+ doped crystals we are looking presently for high power laser materials operating in... more With the Er3+ doped crystals we are looking presently for high power laser materials operating in the eye-safe spectral region around 1.54 μm, with at least equivalent optical characteristics and laser performance - when codoped with Yb3+-but with better thermal properties than that of the commercially available Er-doped phosphate . glasses (such as Kigre QE-7 for example). With the Tm3+ doped systems, we are looking for materials for efficient diode-pumped mid infrared miniature lasers which can lase in a tunable mode in the 2 μm spectral region.

Advanced Solid State Lasers, 1992

ABSTRACT

Planar waveguide lasers based on single crystal materials are very attractive in order to produce... more Planar waveguide lasers based on single crystal materials are very attractive in order to produce compact diode pumped solid state lasers exhibiting very low laser threshold. These waveguide lasers can be manufactured by ion diffusion, ion implantation or liquid phase epitaxy.

ECS Meeting Abstracts, 2011

in 29 different location of eastern Uttar Pradesh revealed the occurrence of Tylenchorhynchus spp... more in 29 different location of eastern Uttar Pradesh revealed the occurrence of Tylenchorhynchus spp., Helicotylenchus spp., Pratylenchus spp., and Hoplolaimus sp in low (1-100/250 cc/soil) to high (501-1000 and >1000/250-cc/soil)population densities. Consistent association of Pratylenchus and prevalence of root-knot nematode, although in low numbers, is a matter of concern as these might build up to serious proportion with intensive cultivation of the crop. For productive cultivation of the crop it is therefore, desirable to monitor nematode population on a regular basis.

Advanced Solid State Lasers, 1996

... 1, for severa1 population inversion ratios p, the efficient gain cross section osain@) taking... more ... 1, for severa1 population inversion ratios p, the efficient gain cross section osain@) taking into account the reabsorption and calculated by the ... In Er3+ doped crystals, the absorption and emission spectral line shapes and the high phonon energy are favourable to the 1.55 pm ...

Advanced Solid State Lasers, 1993

Page 1. Nd3+:Ca2A12Si0, a New Solid-State Laser Material for Diode PuIuping B. Viana, D.Saber, A.... more Page 1. Nd3+:Ca2A12Si0, a New Solid-State Laser Material for Diode PuIuping B. Viana, D.Saber, A. M. Lejus, and D. Vivien ... For Rout = 95.9 Cli, and E I c, corresponding to the favorable orientation the extracted IR laser oscillation is 15OmW for a 600mW punip. ...

X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films anneal... more X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C-450°C) has been characterized by measuring the sheet resistance (Rs). Combining Rs and XRR measurements, the resistivity of the nickel silicide is deduced, showing a factor ~3 difference between the high-resistivity Ni2Si phase and the low-resistivity NiSi phase. A measured 49-point contour map shows wafer non-uniformity

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis

IC manufacturers, among other things, have to define a global failure analysis (FA) strategy that... more IC manufacturers, among other things, have to define a global failure analysis (FA) strategy that is best adopted to the challenges associated to the introduction of the 90 and 65 nm CMOS technologies. This article reviews the existing FA techniques and then describes an FA strategy that is aiming at fast, efficient, and economic learning in the latest 120-65 nm CMOS technologies. The strategy is based on a well-balanced mix and usage of in-line defectivity data, voltage contrast analyses, SRAM bitmap analysis results, OBIRCH fault isolation, and various advanced physical characterization techniques. A SRAM bitmap strategy has demonstrated to be very effective in driving most relevant process improvements, and also OBIRCH applied to parametric test structures has helped significantly in identifying major yield detractors.

ECS Transactions, 2009

ABSTRACT The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma En... more ABSTRACT The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) is reported. Films were grown either on TiN/Si(100) or on Si(100) substrates. TiN layers (45nm thick) were PVD-deposited. High Resolution Transmission Electron Microscopy (HRTEM) micrographs show that ZrO2 films display a microstructure made of columnar grains with a diameter of 15-20 nm and extended throughout the whole film thickness. An interfacial layer between ZrO2 films and TiN substrates was detected by Synchrotron Radiation X-Ray Photoelectron Spectroscopy and HRTEM. According to thermodynamics simulations, this interfacial layer should be a ternary Zr-Ti-O compound.

Optics Communications, 1995

Cr-doped oxyapatite single crystals with formula AGd,(SiO,) 3O and A = Sr or Ca were grown and st... more Cr-doped oxyapatite single crystals with formula AGd,(SiO,) 3O and A = Sr or Ca were grown and studied. The shape and the intensity of their optical absorption and fluorescence bands as well as the values and the temperature variations of the fluorescence lifetimes are characteristic of those of tetrahedrally coordinated Cr4' ions. Gain measurements show their potential wavelength tunability between about 1.2 and 1.5 pm. Room temperature laser action is demonstrated at 1.37 and 1.44 pm in the Ca-and Sr-compounds, respectively.

Journal of Luminescence, 1994

ABSTRACT

AIP Conference …, 2006

This paper presents results obtained using a Junction Photo‐Voltage (JPV) method optimized for ch... more This paper presents results obtained using a Junction Photo‐Voltage (JPV) method optimized for characterization of the combined implant‐annealing process. The tool was found to be particularly suited to measurement of ultra‐shallow junction sheet resistivity ...

AIP Conference Proceedings, 2005

X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films anneal... more X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C-450°C) has been characterized by measuring the sheet resistance (Rs). Combining Rs and XRR measurements, the resistivity of the nickel silicide is deduced, showing a factor ~3 difference between the high-resistivity Ni2Si phase and the low-resistivity NiSi phase. A measured 49-point contour map shows wafer non-uniformity

ECS Transactions, 2000

ABSTRACT In the pursuit of smaller and faster devices manufacture, integration of new materials e... more ABSTRACT In the pursuit of smaller and faster devices manufacture, integration of new materials exhibiting a high dielectric permittivity is going on to replace silicon oxide SiO2 in Metal/Insulator/Metal (MIM) capacitors and in Dynamic Random Access Memory (DRAM). Among these materials, zirconium oxide, ZrO2, in its highest dielectric permittivity phase (the high temperature tetragonal one) is investigated. Atomic Layer Deposition (ALD) of out-of-equilibrium ZrO2 thin films in 3D architectures is explored using various approaches: evaluation of the zirconium gaseous precursor, influence of operating conditions, and thermal behavior of the deposited films. Thermodynamic models are used to better understand the film growth.

Surface and Interface Analysis

Recent time-of-flight secondary ion mass spectrometry (ToF-SIMS) studies using primary cluster io... more Recent time-of-flight secondary ion mass spectrometry (ToF-SIMS) studies using primary cluster ion sources such as Aun+, SFn+, Bin+ or C60+ have shown polyatomic ions to be more appropriate for the detection of high mass molecular secondary ions than monoatomic ion sources like Ga+, thanks to secondary ion yield and ion formation efficiency enhancements.This work is part of a study aiming at improving molecular compound quantification at the surface of microelectronics industry substrates by taking advantage of a polyatomic ion source in ToF-SIMS analysis. It focuses on the case of a phthalate-related contamination. Fundamental parameters like secondary ion yield, damage cross section and secondary ion efficiency were studied as a function of the size and the energy of the primary ions. The substrate composition influence on the ToF-SIMS results was also studied by comparing several substrates of interest in the microelectronics industry such as silicon wafers and low dielectric con...

Le Journal de Physique IV, 1991

We report here the growth and characterization of non linear single crystals p BaB204 (BBO) which... more We report here the growth and characterization of non linear single crystals p BaB204 (BBO) which is an interesting material for second harmonic generation. Single crystals were grown from NqO-B20, solutions using the top seeded solution growth method. The experimental set up included a Nd:YAG, Q switched, focalised with a cylindrical lens on the samples. Efficiency up to 40 % were obtained using 6 mm long crystal.

Bourvon et al.: On the way to wafer-level quantum dot light-emitting diodes

ECS Meeting Abstracts, 2009

not Available.

Mr. Ryan Ross 1, Marc De la Bardonnie 2, Magali Lamy 3, Khiem Ly 1, Frederic Lorut 3, Christophe ... more Mr. Ryan Ross 1, Marc De la Bardonnie 2, Magali Lamy 3, Khiem Ly 1, Frederic Lorut 3, Christophe Wyon 4 and Laurens Kwakman 2, 1 Freescale Semiconductor, 870, Rue Jean Monnet, Crolles, 38926, France, 2 Philips Semiconductors, 860, Rue Jean Monnet, ...

Advanced Solid State Lasers, 1991

With the Er3+ doped crystals we are looking presently for high power laser materials operating in... more With the Er3+ doped crystals we are looking presently for high power laser materials operating in the eye-safe spectral region around 1.54 μm, with at least equivalent optical characteristics and laser performance - when codoped with Yb3+-but with better thermal properties than that of the commercially available Er-doped phosphate . glasses (such as Kigre QE-7 for example). With the Tm3+ doped systems, we are looking for materials for efficient diode-pumped mid infrared miniature lasers which can lase in a tunable mode in the 2 μm spectral region.

Advanced Solid State Lasers, 1992

ABSTRACT

Planar waveguide lasers based on single crystal materials are very attractive in order to produce... more Planar waveguide lasers based on single crystal materials are very attractive in order to produce compact diode pumped solid state lasers exhibiting very low laser threshold. These waveguide lasers can be manufactured by ion diffusion, ion implantation or liquid phase epitaxy.

ECS Meeting Abstracts, 2011

in 29 different location of eastern Uttar Pradesh revealed the occurrence of Tylenchorhynchus spp... more in 29 different location of eastern Uttar Pradesh revealed the occurrence of Tylenchorhynchus spp., Helicotylenchus spp., Pratylenchus spp., and Hoplolaimus sp in low (1-100/250 cc/soil) to high (501-1000 and >1000/250-cc/soil)population densities. Consistent association of Pratylenchus and prevalence of root-knot nematode, although in low numbers, is a matter of concern as these might build up to serious proportion with intensive cultivation of the crop. For productive cultivation of the crop it is therefore, desirable to monitor nematode population on a regular basis.

Advanced Solid State Lasers, 1996

... 1, for severa1 population inversion ratios p, the efficient gain cross section osain@) taking... more ... 1, for severa1 population inversion ratios p, the efficient gain cross section osain@) taking into account the reabsorption and calculated by the ... In Er3+ doped crystals, the absorption and emission spectral line shapes and the high phonon energy are favourable to the 1.55 pm ...

Advanced Solid State Lasers, 1993

Page 1. Nd3+:Ca2A12Si0, a New Solid-State Laser Material for Diode PuIuping B. Viana, D.Saber, A.... more Page 1. Nd3+:Ca2A12Si0, a New Solid-State Laser Material for Diode PuIuping B. Viana, D.Saber, A. M. Lejus, and D. Vivien ... For Rout = 95.9 Cli, and E I c, corresponding to the favorable orientation the extracted IR laser oscillation is 15OmW for a 600mW punip. ...

X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films anneal... more X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C-450°C) has been characterized by measuring the sheet resistance (Rs). Combining Rs and XRR measurements, the resistivity of the nickel silicide is deduced, showing a factor ~3 difference between the high-resistivity Ni2Si phase and the low-resistivity NiSi phase. A measured 49-point contour map shows wafer non-uniformity

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis

IC manufacturers, among other things, have to define a global failure analysis (FA) strategy that... more IC manufacturers, among other things, have to define a global failure analysis (FA) strategy that is best adopted to the challenges associated to the introduction of the 90 and 65 nm CMOS technologies. This article reviews the existing FA techniques and then describes an FA strategy that is aiming at fast, efficient, and economic learning in the latest 120-65 nm CMOS technologies. The strategy is based on a well-balanced mix and usage of in-line defectivity data, voltage contrast analyses, SRAM bitmap analysis results, OBIRCH fault isolation, and various advanced physical characterization techniques. A SRAM bitmap strategy has demonstrated to be very effective in driving most relevant process improvements, and also OBIRCH applied to parametric test structures has helped significantly in identifying major yield detractors.

ECS Transactions, 2009

ABSTRACT The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma En... more ABSTRACT The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) is reported. Films were grown either on TiN/Si(100) or on Si(100) substrates. TiN layers (45nm thick) were PVD-deposited. High Resolution Transmission Electron Microscopy (HRTEM) micrographs show that ZrO2 films display a microstructure made of columnar grains with a diameter of 15-20 nm and extended throughout the whole film thickness. An interfacial layer between ZrO2 films and TiN substrates was detected by Synchrotron Radiation X-Ray Photoelectron Spectroscopy and HRTEM. According to thermodynamics simulations, this interfacial layer should be a ternary Zr-Ti-O compound.

Optics Communications, 1995

Cr-doped oxyapatite single crystals with formula AGd,(SiO,) 3O and A = Sr or Ca were grown and st... more Cr-doped oxyapatite single crystals with formula AGd,(SiO,) 3O and A = Sr or Ca were grown and studied. The shape and the intensity of their optical absorption and fluorescence bands as well as the values and the temperature variations of the fluorescence lifetimes are characteristic of those of tetrahedrally coordinated Cr4' ions. Gain measurements show their potential wavelength tunability between about 1.2 and 1.5 pm. Room temperature laser action is demonstrated at 1.37 and 1.44 pm in the Ca-and Sr-compounds, respectively.

Journal of Luminescence, 1994

ABSTRACT

AIP Conference …, 2006

This paper presents results obtained using a Junction Photo‐Voltage (JPV) method optimized for ch... more This paper presents results obtained using a Junction Photo‐Voltage (JPV) method optimized for characterization of the combined implant‐annealing process. The tool was found to be particularly suited to measurement of ultra‐shallow junction sheet resistivity ...

AIP Conference Proceedings, 2005

X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films anneal... more X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C-450°C) has been characterized by measuring the sheet resistance (Rs). Combining Rs and XRR measurements, the resistivity of the nickel silicide is deduced, showing a factor ~3 difference between the high-resistivity Ni2Si phase and the low-resistivity NiSi phase. A measured 49-point contour map shows wafer non-uniformity

ECS Transactions, 2000

ABSTRACT In the pursuit of smaller and faster devices manufacture, integration of new materials e... more ABSTRACT In the pursuit of smaller and faster devices manufacture, integration of new materials exhibiting a high dielectric permittivity is going on to replace silicon oxide SiO2 in Metal/Insulator/Metal (MIM) capacitors and in Dynamic Random Access Memory (DRAM). Among these materials, zirconium oxide, ZrO2, in its highest dielectric permittivity phase (the high temperature tetragonal one) is investigated. Atomic Layer Deposition (ALD) of out-of-equilibrium ZrO2 thin films in 3D architectures is explored using various approaches: evaluation of the zirconium gaseous precursor, influence of operating conditions, and thermal behavior of the deposited films. Thermodynamic models are used to better understand the film growth.

Surface and Interface Analysis

Recent time-of-flight secondary ion mass spectrometry (ToF-SIMS) studies using primary cluster io... more Recent time-of-flight secondary ion mass spectrometry (ToF-SIMS) studies using primary cluster ion sources such as Aun+, SFn+, Bin+ or C60+ have shown polyatomic ions to be more appropriate for the detection of high mass molecular secondary ions than monoatomic ion sources like Ga+, thanks to secondary ion yield and ion formation efficiency enhancements.This work is part of a study aiming at improving molecular compound quantification at the surface of microelectronics industry substrates by taking advantage of a polyatomic ion source in ToF-SIMS analysis. It focuses on the case of a phthalate-related contamination. Fundamental parameters like secondary ion yield, damage cross section and secondary ion efficiency were studied as a function of the size and the energy of the primary ions. The substrate composition influence on the ToF-SIMS results was also studied by comparing several substrates of interest in the microelectronics industry such as silicon wafers and low dielectric con...

Le Journal de Physique IV, 1991

We report here the growth and characterization of non linear single crystals p BaB204 (BBO) which... more We report here the growth and characterization of non linear single crystals p BaB204 (BBO) which is an interesting material for second harmonic generation. Single crystals were grown from NqO-B20, solutions using the top seeded solution growth method. The experimental set up included a Nd:YAG, Q switched, focalised with a cylindrical lens on the samples. Efficiency up to 40 % were obtained using 6 mm long crystal.