Cabir Temirci - Academia.edu (original) (raw)

Papers by Cabir Temirci

Materials Science in Semiconductor Processing, Dec 1, 2014

We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The op... more We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 Â 10 2 and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed.

Applied Surface Science, 2006

Materials Science in Semiconductor Processing, 2014

We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The op... more We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 Â 10 2 and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed.

Iğdır üniversitesi fen bilimleri enstitüsü dergisi (Online), Mar 1, 2024

The effects of surface oxidation and H-Termination processes applied to Si using electrolytic Hyd... more The effects of surface oxidation and H-Termination processes applied to Si using electrolytic Hydrogen Peroxide solution to the produced Cu/p-Si Schottky contact parameters.

Sn/p-Si Schottky kontaklari uretildi. Numunelerin Akim-Voltaj (I-V), Kapasitans-Voltaj (C-V) ve K... more Sn/p-Si Schottky kontaklari uretildi. Numunelerin Akim-Voltaj (I-V), Kapasitans-Voltaj (C-V) ve Kapasitans-frekans (C-f) olcumleri karanlikta ve oda sicakliginda alindi. Numunelerin idealite faktorleri (n) ve engel yukseklikleri (Φb) dogru beslem akim-voltaj (I-V) karakteristiklerinden ve ayrica sonuclarin uyumlulugunu kontrol etmek icin Cheung Fonksiyonlarindan hesaplandi. Numunelerin seri direncleri (Rs) Cheung Fonksiyonlarindan belirlendi. Diyot A’nin 100 kHz-20 MHz frekans araliginda C-V karakteristiklerinden difuzyon potansiyelini hesaplayarak, difuzyon potansiyeli-frekans degisimi gozlendi. Ilave olarak, ayni numunenin 1 MHz, 5 MHz, 10 MHz, 15 MHz ve 20 MHz frekans degerlerinde C-V karakteristikleri kullanilarak engel yukseklikleri hesaplandi. Olcumler ve hesaplamalar neticesinde, numunelerin engel yuksekliklerinin 1 MHz’den 5 MHz’e kadar cok az arttigi, ancak 5 MHz’den 20 MHz’e kadar surekli olarak dustugu tespit edildi. Elde edilen verilerden, uretilen Schottky diyotlarin en...

Physica status solidi, Nov 1, 2004

ABSTRACT

Applied Surface Science, 2001

We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior t... more We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior to the Sn evaporation on the p-Si(001), the first kinds of samples consisted of a dip in diluted aqueous HF solution followed by a rinse in de-ionized water (sample 1, SD1), the second kinds of samples several steps of anodization in aqueous KOH solution each followed by

Physica B: Condensed Matter, 2007

Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the... more Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device

We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior t... more We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior to the Sn evaporation on the p-Si(0 0 1), the ®rst kinds of samples consisted of a dip in diluted aqueous HF solution followed by a rinse in de-ionized water (sample 1, SD1), the second kinds of samples several steps of anodization in aqueous KOH solution each followed by a dip in diluted aqueous HF solution and a subsequent rinse in de-ionized water (sample 2, SD2), and the third kinds of samples one anodization step only (sample 3, SD3). We have found the lowest values of both the barrier heights and ideality factors with the diodes of preparation type SD2. The anodization, on the other hand, have increased both, the barrier heights as well as the ideality factors. The extrapolation of the barrier heights versus ideality factors plot to the ideality factor determined by the image force effect have given the laterally homogeneous barrier heights of approximately 0.75 and 0.92 eV for the SD2 and SD3 diodes. Furthermore, we have calculated a mean tunneling barrier height of w 0X12 eV for the MIS Sn/p-Si diodes with the anodic oxide layer.

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation techniq... more In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φ b) and series resistance (R s) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

In order to investigate relationship between photovoltaic and diode characteristic parameters, we... more In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current-voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed.

Materials Science-Poland, 2020

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation techniq... more In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height ( Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Scho...

Materials Today: Proceedings, 2019

We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-v... more We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode's current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I 0) were calculated. Moreover, the barrier height (Ф b) and series resistance (R S) were calculated with Cheungs' and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance.

Solar Energy, 2016

In order to investigate relationship between photovoltaic and diode characteristic parameters, we... more In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current-voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed.

Synthetic Metals, 2004

The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky st... more The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether or not a nonpolymeric organic compound as contact to an inorganic semiconductor such as Si can provide the continuous control of the barrier height (BH). The barrier height Φ bp values of 0.51, 0.674, 0.75 and 0.79 eV for the Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have obtained from the forward current-voltage (I-V) characteristics. It has been seen that the values of Φ bp are significantly larger than those of conventional Schottky diodes.

International Journal of Electronics, 2001

ABSTRACT This work presents an attempt related to the importance of the fact that the series resi... more ABSTRACT This work presents an attempt related to the importance of the fact that the series resistance value is considered in calculating the inter-face state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the consistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 and 400µm have been prepared. Both diodes showed non-ideal I-V behaviour with ideality factors of 1.14 and 1.12, respectively, and thus it has been thought that the diodes have a metal-interface layer-semiconductor configuration. At the same energy position near the bottom of the conduction band, the interface state density (NSS) values, without taking into account the series resistance value of the devices, are almost one order of magnitude larger than the NSS values obtained taking into account the series resistance value.

Applied Surface Science, 1999

The Tirn-GaAs Te Schottky barrier diodes have been annealed in the temperature range 200-4008C wi... more The Tirn-GaAs Te Schottky barrier diodes have been annealed in the temperature range 200-4008C with steps of 1008C for 5 min. The barrier height value has increased with increasing annealing temperature. This increase has been attributed to that the annealing removes the passivation effect of the native oxide layer and reactivates the surface defects which are Ž. responsible for the Fermi level pinning. The value of equilibrium interface charge density Q 0 has increased with ss increasing annealing temperature. It has been found that the experimental density distribution curves of the interface states Ž. and the values of equilibrium interface charge density Q 0 has confirmed this interpretation. The results indicate that the ss negative equilibrium interface charge is responsible for the actual equilibrium barrier height value.

Physica Scripta, 2003

ABSTRACT

Materials Science-Poland

Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1... more Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under...

Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 2002

Materials Science in Semiconductor Processing, Dec 1, 2014

We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The op... more We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 Â 10 2 and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed.

Applied Surface Science, 2006

Materials Science in Semiconductor Processing, 2014

We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The op... more We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 Â 10 2 and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed.

Iğdır üniversitesi fen bilimleri enstitüsü dergisi (Online), Mar 1, 2024

The effects of surface oxidation and H-Termination processes applied to Si using electrolytic Hyd... more The effects of surface oxidation and H-Termination processes applied to Si using electrolytic Hydrogen Peroxide solution to the produced Cu/p-Si Schottky contact parameters.

Sn/p-Si Schottky kontaklari uretildi. Numunelerin Akim-Voltaj (I-V), Kapasitans-Voltaj (C-V) ve K... more Sn/p-Si Schottky kontaklari uretildi. Numunelerin Akim-Voltaj (I-V), Kapasitans-Voltaj (C-V) ve Kapasitans-frekans (C-f) olcumleri karanlikta ve oda sicakliginda alindi. Numunelerin idealite faktorleri (n) ve engel yukseklikleri (Φb) dogru beslem akim-voltaj (I-V) karakteristiklerinden ve ayrica sonuclarin uyumlulugunu kontrol etmek icin Cheung Fonksiyonlarindan hesaplandi. Numunelerin seri direncleri (Rs) Cheung Fonksiyonlarindan belirlendi. Diyot A’nin 100 kHz-20 MHz frekans araliginda C-V karakteristiklerinden difuzyon potansiyelini hesaplayarak, difuzyon potansiyeli-frekans degisimi gozlendi. Ilave olarak, ayni numunenin 1 MHz, 5 MHz, 10 MHz, 15 MHz ve 20 MHz frekans degerlerinde C-V karakteristikleri kullanilarak engel yukseklikleri hesaplandi. Olcumler ve hesaplamalar neticesinde, numunelerin engel yuksekliklerinin 1 MHz’den 5 MHz’e kadar cok az arttigi, ancak 5 MHz’den 20 MHz’e kadar surekli olarak dustugu tespit edildi. Elde edilen verilerden, uretilen Schottky diyotlarin en...

Physica status solidi, Nov 1, 2004

ABSTRACT

Applied Surface Science, 2001

We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior t... more We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior to the Sn evaporation on the p-Si(001), the first kinds of samples consisted of a dip in diluted aqueous HF solution followed by a rinse in de-ionized water (sample 1, SD1), the second kinds of samples several steps of anodization in aqueous KOH solution each followed by

Physica B: Condensed Matter, 2007

Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the... more Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device

We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior t... more We have fabricated the Sn/p-Si Schottky barrier diodes with different surface treatments. Prior to the Sn evaporation on the p-Si(0 0 1), the ®rst kinds of samples consisted of a dip in diluted aqueous HF solution followed by a rinse in de-ionized water (sample 1, SD1), the second kinds of samples several steps of anodization in aqueous KOH solution each followed by a dip in diluted aqueous HF solution and a subsequent rinse in de-ionized water (sample 2, SD2), and the third kinds of samples one anodization step only (sample 3, SD3). We have found the lowest values of both the barrier heights and ideality factors with the diodes of preparation type SD2. The anodization, on the other hand, have increased both, the barrier heights as well as the ideality factors. The extrapolation of the barrier heights versus ideality factors plot to the ideality factor determined by the image force effect have given the laterally homogeneous barrier heights of approximately 0.75 and 0.92 eV for the SD2 and SD3 diodes. Furthermore, we have calculated a mean tunneling barrier height of w 0X12 eV for the MIS Sn/p-Si diodes with the anodic oxide layer.

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation techniq... more In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φ b) and series resistance (R s) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

In order to investigate relationship between photovoltaic and diode characteristic parameters, we... more In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current-voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed.

Materials Science-Poland, 2020

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation techniq... more In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height ( Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Scho...

Materials Today: Proceedings, 2019

We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-v... more We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode's current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I 0) were calculated. Moreover, the barrier height (Ф b) and series resistance (R S) were calculated with Cheungs' and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance.

Solar Energy, 2016

In order to investigate relationship between photovoltaic and diode characteristic parameters, we... more In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current-voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed.

Synthetic Metals, 2004

The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky st... more The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether or not a nonpolymeric organic compound as contact to an inorganic semiconductor such as Si can provide the continuous control of the barrier height (BH). The barrier height Φ bp values of 0.51, 0.674, 0.75 and 0.79 eV for the Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have obtained from the forward current-voltage (I-V) characteristics. It has been seen that the values of Φ bp are significantly larger than those of conventional Schottky diodes.

International Journal of Electronics, 2001

ABSTRACT This work presents an attempt related to the importance of the fact that the series resi... more ABSTRACT This work presents an attempt related to the importance of the fact that the series resistance value is considered in calculating the inter-face state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the consistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 and 400µm have been prepared. Both diodes showed non-ideal I-V behaviour with ideality factors of 1.14 and 1.12, respectively, and thus it has been thought that the diodes have a metal-interface layer-semiconductor configuration. At the same energy position near the bottom of the conduction band, the interface state density (NSS) values, without taking into account the series resistance value of the devices, are almost one order of magnitude larger than the NSS values obtained taking into account the series resistance value.

Applied Surface Science, 1999

The Tirn-GaAs Te Schottky barrier diodes have been annealed in the temperature range 200-4008C wi... more The Tirn-GaAs Te Schottky barrier diodes have been annealed in the temperature range 200-4008C with steps of 1008C for 5 min. The barrier height value has increased with increasing annealing temperature. This increase has been attributed to that the annealing removes the passivation effect of the native oxide layer and reactivates the surface defects which are Ž. responsible for the Fermi level pinning. The value of equilibrium interface charge density Q 0 has increased with ss increasing annealing temperature. It has been found that the experimental density distribution curves of the interface states Ž. and the values of equilibrium interface charge density Q 0 has confirmed this interpretation. The results indicate that the ss negative equilibrium interface charge is responsible for the actual equilibrium barrier height value.

Physica Scripta, 2003

ABSTRACT

Materials Science-Poland

Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1... more Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under...

Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 2002