Claudio Betancourt - Academia.edu (original) (raw)
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CSIC (Consejo Superior de Investigaciones Científicas-Spanish National Research Council)
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Papers by Claudio Betancourt
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both t... more The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector.
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
The charge collected from beta source particles in single pad detectors produced on p-type Magnet... more The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), s... more Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures were manufactured on several high-resistivity substrates: ptype Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60 Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and test structures are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 o C, and large effects on the surface parameters observed.
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both t... more The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector.
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
The charge collected from beta source particles in single pad detectors produced on p-type Magnet... more The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2007
Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), s... more Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures were manufactured on several high-resistivity substrates: ptype Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60 Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and test structures are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 o C, and large effects on the surface parameters observed.