Eduard Cartier - Academia.edu (original) (raw)
Papers by Eduard Cartier
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014
We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) t... more We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) technology, which uses only thin TiN layers as workfunction (WF)-setting metals for CMOS integration. The SIGMA stack provides 100× PBTI lifetime improvement via band alignment engineering. Moreover, the SIGMA stack enables 9nm more gate length (Lg) scaling compared to the conventional stack with matched gate resistance and thus opens up pathways for aggressive Lg scaling toward the 14nm node and beyond.
Physical Review B, 1986
Effective mean free paths of hot electrons in the energy range 0.5 eV+Ek;"&20 eV are determined e... more Effective mean free paths of hot electrons in the energy range 0.5 eV+Ek;"&20 eV are determined experimentally for the paraffin n-C36H7~with the internal photoemission for transport analysis method. The hot-electron transport parameters are discussed in terms of fundamental scattering mechanisms in organic dielectrics. The influence of hot-electron-induced trap formation on the transport properties is investigated. The consequences for dielectric breakdown are pointed out.
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
2015 IEEE International Reliability Physics Symposium, 2015
Negative Bias Temperature Instability (NBTI) is assessed in (100)Si planar cSi<sub>0.5</... more Negative Bias Temperature Instability (NBTI) is assessed in (100)Si planar cSi<sub>0.5</sub>Ge<sub>0.5</sub> Replacement Metal Gate (RMG) gate stacks, with and without high-k nitridation for various post nitridation anneal (PNA) conditions. Observed initial N<sub>it</sub> was 8~9×10<sup>11</sup> cm<sup>-2</sup>. Nitrided devices show higher NBTI than non-nitrided devices. Observed time slopes become shallower from ~0.25 to ~0.20. Overall, observed NBTI in cSi<sub>0.5</sub>Ge<sub>0.5</sub> stacks are promising making it viable for use in 7nm and below nodes.
MRS Proceedings, 2002
ABSTRACTA fast screening technique is used to study the ALD HfO2 growth behavior on different typ... more ABSTRACTA fast screening technique is used to study the ALD HfO2 growth behavior on different types of starting surfaces (H-passivated, chemical oxide, thermal oxide). The amount of Hf deposited at the early stages of the ALD process is measured by means of RBS. The HfO2 film quality on different starting surfaces is examined with ToFSIMS. The results suggest an island growth mechanism on a H-terminated starting surface: nucleation, development of separated nuclei and flattening. It is shown that ALD growth starts faster if –OH groups are present on the surface. A remote H2 plasma surface pre-treatment at room temperature is also studied. The influence of the plasma exposure time and number of water pulses prior to HfO2 deposition was examined. The H2 plasma surface pre-treatment can be considered as a promising candidate for sub 1 nm EOT performance.
Digest of Technical Papers - Symposium on VLSI Technology, 2005
We demonstrate experimentally that the flatband/threshold voltages (VFB/Vt) of pFET metal gates a... more We demonstrate experimentally that the flatband/threshold voltages (VFB/Vt) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O2 partial pressure during post-deposition N2/O2 and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack VFB can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and VFB/Vt-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift VFB/Vt. The results indicate that VFB/Vt control remains a formidable processing challenge with high workfunction metals on HfO2.
Physics Letters A, 1981
A variety of metallic glasses (CuxZrioo-x with x = 30, 40 and 50, Ni 24Zr76 and RE67Co33, RE = Nd... more A variety of metallic glasses (CuxZrioo-x with x = 30, 40 and 50, Ni 24Zr76 and RE67Co33, RE = Nd, Sm, Gd, Dy, Er) were studied using 27 angular correlation techniques. Significant positron trapping is observed in all the glassy alloys investigated. The defect structure changes drastically during crystallization. For the RE-Co glasses the results suggest the existence of vacancy-like defects in the amorphous alloys.
Microelectronic Engineering, 2001
Charges arising from single electrons and holes localized in SiO gate oxides and at the SiO-Si(11... more Charges arising from single electrons and holes localized in SiO gate oxides and at the SiO-Si(111) interface were 2 2 imaged with a non-contact atomic force microscope (AFM). The polarity of the charge was ascertained from simultaneously recorded Kelvin images. The bias dependent position of the Fermi level controls the trap occupancy in general, as well as the state of charge of interface states (P centers) and their polarity. Temporary trap occupancy caused by the extreme band b bending beneath the AFM tip can lead to an appreciable enhancement in the apparent resolution of the charge image.
Microelectronic Engineering, 1997
We show that the potential fluctuation model of Brews applies very accurately to Pb centres at th... more We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pbl defects appear to have the same capture cross-section.
Journal of Non-Crystalline Solids, 1995
The generation of interface states at the SiSiO2-interface caused by atomic hydrogen, H0, from a ... more The generation of interface states at the SiSiO2-interface caused by atomic hydrogen, H0, from a remote hydrogen plasma has been studied. It is found that H0 produces large numbers of interface-states, irrespective of the oxide thickness and the substrate orientation. The interface-state density is found to increase linearly with the H0-dose over a wide range. The rate at which the
Applied Physics Letters, 1995
Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structure... more Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structures were detected as a collector current in the Si by using a STM configuration known as ballistic electron emission microscopy. The collector current, observed for STM tip potentials ≳4 V and for oxide biases ≥0 V, is direct evidence for electron transmission through the conduction band of the SiO2. Negative oxide biases delayed the onset of current to correspondingly higher tip potentials. A simple model was used to extract the energy and bias dependent transmission probabilities from the experimental data for a 62 A˚ SiO2 layer. The results are compared with Monte Carlo calculations.
Applied Physics Letters, 1992
Positive charge formation and its possible relationship to impact ionization in silicon dioxide h... more Positive charge formation and its possible relationship to impact ionization in silicon dioxide have been controversial issues for many years. In this study, band-gap ionization due to the development of a high-energy tail in the hot-electron energy distribution is shown to occur in films thicker than 20.0 nm at fields higher than 7 MV/cm. This process is demonstrated to ‘‘directly’’
Applied Physics Letters, 1993
Pb density of only 3-6 X 10" cme2, indicating that both reactions may be thermally activ... more Pb density of only 3-6 X 10" cme2, indicating that both reactions may be thermally activated. Further- more, we find that this steady-state Pb density is about an order of magnitude smaller than the total number of elec- trically active interface states produced by atomic hydro- gen. A remote microwave hydrogen-plasma system similar to the one described by Johnson' was
Applied Physics Letters, 2000
ABSTRACT
Applied Physics Letters, 1993
ABSTRACT
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014
We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) t... more We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) technology, which uses only thin TiN layers as workfunction (WF)-setting metals for CMOS integration. The SIGMA stack provides 100× PBTI lifetime improvement via band alignment engineering. Moreover, the SIGMA stack enables 9nm more gate length (Lg) scaling compared to the conventional stack with matched gate resistance and thus opens up pathways for aggressive Lg scaling toward the 14nm node and beyond.
Physical Review B, 1986
Effective mean free paths of hot electrons in the energy range 0.5 eV+Ek;"&20 eV are determined e... more Effective mean free paths of hot electrons in the energy range 0.5 eV+Ek;"&20 eV are determined experimentally for the paraffin n-C36H7~with the internal photoemission for transport analysis method. The hot-electron transport parameters are discussed in terms of fundamental scattering mechanisms in organic dielectrics. The influence of hot-electron-induced trap formation on the transport properties is investigated. The consequences for dielectric breakdown are pointed out.
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
2015 IEEE International Reliability Physics Symposium, 2015
Negative Bias Temperature Instability (NBTI) is assessed in (100)Si planar cSi<sub>0.5</... more Negative Bias Temperature Instability (NBTI) is assessed in (100)Si planar cSi<sub>0.5</sub>Ge<sub>0.5</sub> Replacement Metal Gate (RMG) gate stacks, with and without high-k nitridation for various post nitridation anneal (PNA) conditions. Observed initial N<sub>it</sub> was 8~9×10<sup>11</sup> cm<sup>-2</sup>. Nitrided devices show higher NBTI than non-nitrided devices. Observed time slopes become shallower from ~0.25 to ~0.20. Overall, observed NBTI in cSi<sub>0.5</sub>Ge<sub>0.5</sub> stacks are promising making it viable for use in 7nm and below nodes.
MRS Proceedings, 2002
ABSTRACTA fast screening technique is used to study the ALD HfO2 growth behavior on different typ... more ABSTRACTA fast screening technique is used to study the ALD HfO2 growth behavior on different types of starting surfaces (H-passivated, chemical oxide, thermal oxide). The amount of Hf deposited at the early stages of the ALD process is measured by means of RBS. The HfO2 film quality on different starting surfaces is examined with ToFSIMS. The results suggest an island growth mechanism on a H-terminated starting surface: nucleation, development of separated nuclei and flattening. It is shown that ALD growth starts faster if –OH groups are present on the surface. A remote H2 plasma surface pre-treatment at room temperature is also studied. The influence of the plasma exposure time and number of water pulses prior to HfO2 deposition was examined. The H2 plasma surface pre-treatment can be considered as a promising candidate for sub 1 nm EOT performance.
Digest of Technical Papers - Symposium on VLSI Technology, 2005
We demonstrate experimentally that the flatband/threshold voltages (VFB/Vt) of pFET metal gates a... more We demonstrate experimentally that the flatband/threshold voltages (VFB/Vt) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O2 partial pressure during post-deposition N2/O2 and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack VFB can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and VFB/Vt-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift VFB/Vt. The results indicate that VFB/Vt control remains a formidable processing challenge with high workfunction metals on HfO2.
Physics Letters A, 1981
A variety of metallic glasses (CuxZrioo-x with x = 30, 40 and 50, Ni 24Zr76 and RE67Co33, RE = Nd... more A variety of metallic glasses (CuxZrioo-x with x = 30, 40 and 50, Ni 24Zr76 and RE67Co33, RE = Nd, Sm, Gd, Dy, Er) were studied using 27 angular correlation techniques. Significant positron trapping is observed in all the glassy alloys investigated. The defect structure changes drastically during crystallization. For the RE-Co glasses the results suggest the existence of vacancy-like defects in the amorphous alloys.
Microelectronic Engineering, 2001
Charges arising from single electrons and holes localized in SiO gate oxides and at the SiO-Si(11... more Charges arising from single electrons and holes localized in SiO gate oxides and at the SiO-Si(111) interface were 2 2 imaged with a non-contact atomic force microscope (AFM). The polarity of the charge was ascertained from simultaneously recorded Kelvin images. The bias dependent position of the Fermi level controls the trap occupancy in general, as well as the state of charge of interface states (P centers) and their polarity. Temporary trap occupancy caused by the extreme band b bending beneath the AFM tip can lead to an appreciable enhancement in the apparent resolution of the charge image.
Microelectronic Engineering, 1997
We show that the potential fluctuation model of Brews applies very accurately to Pb centres at th... more We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pbl defects appear to have the same capture cross-section.
Journal of Non-Crystalline Solids, 1995
The generation of interface states at the SiSiO2-interface caused by atomic hydrogen, H0, from a ... more The generation of interface states at the SiSiO2-interface caused by atomic hydrogen, H0, from a remote hydrogen plasma has been studied. It is found that H0 produces large numbers of interface-states, irrespective of the oxide thickness and the substrate orientation. The interface-state density is found to increase linearly with the H0-dose over a wide range. The rate at which the
Applied Physics Letters, 1995
Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structure... more Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structures were detected as a collector current in the Si by using a STM configuration known as ballistic electron emission microscopy. The collector current, observed for STM tip potentials ≳4 V and for oxide biases ≥0 V, is direct evidence for electron transmission through the conduction band of the SiO2. Negative oxide biases delayed the onset of current to correspondingly higher tip potentials. A simple model was used to extract the energy and bias dependent transmission probabilities from the experimental data for a 62 A˚ SiO2 layer. The results are compared with Monte Carlo calculations.
Applied Physics Letters, 1992
Positive charge formation and its possible relationship to impact ionization in silicon dioxide h... more Positive charge formation and its possible relationship to impact ionization in silicon dioxide have been controversial issues for many years. In this study, band-gap ionization due to the development of a high-energy tail in the hot-electron energy distribution is shown to occur in films thicker than 20.0 nm at fields higher than 7 MV/cm. This process is demonstrated to ‘‘directly’’
Applied Physics Letters, 1993
Pb density of only 3-6 X 10" cme2, indicating that both reactions may be thermally activ... more Pb density of only 3-6 X 10" cme2, indicating that both reactions may be thermally activated. Further- more, we find that this steady-state Pb density is about an order of magnitude smaller than the total number of elec- trically active interface states produced by atomic hydro- gen. A remote microwave hydrogen-plasma system similar to the one described by Johnson' was
Applied Physics Letters, 2000
ABSTRACT
Applied Physics Letters, 1993
ABSTRACT