J. Grzyb - Academia.edu (original) (raw)

Papers by J. Grzyb

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2019

This paper presents system-level characterization and performance evaluation for higher-order M-Q... more This paper presents system-level characterization and performance evaluation for higher-order M-QAM modulation formats of a fully-electronic 1-m wireless link with two highly-integrated direct-conversion quadrature TX and RX modules in 0.13-µm SiGe HBT technology operating with a tunable 220-260 GHz LO carrier. With the limited baseband bandwidth of 15 GHz, the maximum achieved data rates for 16-/32-/64-QAM modulation are 90 Gbps (EVM of 14.6%), 90 Gbps (EVM of 11.9%) and 81 Gbps (EVM of 8.7%), respectively.

IEEE International Workshop on Antenna Technology Small Antennas and Novel Metamaterials, 2006.

A coplanar patch antenna suitable for integration with millimeter wave (mmWave) transceiver ICs i... more A coplanar patch antenna suitable for integration with millimeter wave (mmWave) transceiver ICs is presented. The antenna is printed on a fused silica substrate and can be connected to a silicon transceiver via solder balls with 150µm pitch. The antenna was designed and manufactured for the 60GHz industrial scientific medical (ISM) band and shows about 5GHz of bandwidth with high

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)

... process. A treatment of the error boxes measured by the calibration comparison method was pre... more ... process. A treatment of the error boxes measured by the calibration comparison method was presented in [6] and determines the characteristic impedance accounting for only a shunt codact-pad capacitance and conductance. ...

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014

This paper presents recent developments on transmitter and receiver circuit in advanced SiGe tech... more This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct detectors, heterodyne receivers and Radar transceivers for wide-band signal detection. The circuits are attached to a secondary silicon lens and packaged on low-cost FR4 printed circuit boards.

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012

ABSTRACT This paper presents heterojunction bipolar transistor (HBT) based terahertz power detect... more ABSTRACT This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity RI of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.

ABSTRACT Next generation wireless communiaction terminals will demand the use of advanced compone... more ABSTRACT Next generation wireless communiaction terminals will demand the use of advanced component integration process and high density packaging technologies in order to reduce size and to increase performance. The ability of the MCM-D low-cost Large Area Panel Processing technology to provide controlled impedance, microstrip, coplanar structures and integrated thin film passive components with useful performance in the microwave frequency regime is reported in this paper. This technologyis the 4 layer metallisation 1212in 2 and 2424in 2 panels MCM-D developed for digital applications. We show that it is also able to realize RF functions through the integration of of a range of integrated inductors and capacitors. Representative equivalent circuit models for these models are discussed. The analysis of different design options and design parameters for planar spiral inductors is also considered . Special attention is given to the costs driven by area consumption and yield loss. Key words: Large Area PanelProcessing, MCM-D technology, integrated inductors and capacitors I.

ABSTRACT A new low cost thin film substrate technology was developed within the EU research proje... more ABSTRACT A new low cost thin film substrate technology was developed within the EU research project LAP. The project's substrate cost target of 1 US$/inch 2 shall be obtained by using low cost materials and large area panel processing (LAP). This paper presents tests and measurements showing the process accuracy and the geometric variations resulting from low cost manufacturing. The second part is focusing on the impact on RF structure integration and on partitioning aspects for RF chip-package co-design. 1

2011 IEEE International Solid-State Circuits Conference, 2011

ABSTRACT In this paper, recent advances in SiGe HBT device technology are used to demonstrate a 8... more ABSTRACT In this paper, recent advances in SiGe HBT device technology are used to demonstrate a 820GHz TX/RX chipset for active terahertz imaging applications.

32nd European Microwave Conference, 2002, 2002

ABSTRACT The procedures allowing determination of the microstrip and CPW lines characteristic imp... more ABSTRACT The procedures allowing determination of the microstrip and CPW lines characteristic impedance are presented. The procedures are based on the measurement technique of two on-wafer line standards as presented by Carchon et al (1). An initial off-wafer LRM or TRL calibration is assumed. The formulation of the whole extraction problem in terms of the ABCD chain matrix allows us to omit the influence of a difference between complex characteristic impedances of both lines on the S-matrix asymmetry of the feeding transition. On the contrary, the AD-BC=1 condition of its chain matrix is not influenced by this effect. The next novelty lies in the modelling of the CPW-microstrip transition by a symmetric model. This allows to extract the characteristic impedance without using of any fixed transition model and takes automatically into consideration a distributed nature of the transition. The next feature is that a specific treatment of the measured standards enables to extract an equivalent position of the probe-tips along the line. In case of MCM-D different microstrip feed topologies have been analysed and the best possible one has been found.

Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, 2002

IEEE Transactions on Microwave Theory and Techniques, 2006

Page 1. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 8, AUGUST 2006 3387 A ... more Page 1. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 8, AUGUST 2006 3387 A Chip-Scale Packaging Technology for 60-GHz Wireless Chipsets Ullrich R. Pfeiffer, Member, IEEE, Janusz ...

Within the European project LIPS (www.ife.ethz.ch/lips) we are developing a substrate technology ... more Within the European project LIPS (www.ife.ethz.ch/lips) we are developing a substrate technology for an all-planar single- substrate 77GHz radar module for automotive applications. We use an enhanced MCM-D thin-film technology enabling millimeter-wave operation. Compared to the presently known designs the high resolution of the thin-film process eliminates need for post-production tuning. A build up with thick (45um) BCB dielectric, combination

2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220), 2000

2007 IEEE Antennas and Propagation International Symposium, 2007

Future telecommunication aplications will shift more and more to the use of higher frequncies. Mu... more Future telecommunication aplications will shift more and more to the use of higher frequncies. Multichip Modules (MCMs) and MCM technologies are very close to micro- and milimeter-wave systems like transmitter/receivr (T/R) for radars and communication modules for wireless infrastructure links. There are various stringent requirements for MCMs in the frequency range of 1 to 100GHz but one of the most critical requirements is the ability of high yield and high volume production together with the low cost and high RF performance. Integration of RF circuits and elements with digital and analog circuits on the same substrate is essential to reduce the overall cost and physical dimensions of the whole system. One of the most difficult elements to integrate in such a module is the antenna because the technological requirements driven by its performance characteristics (radiation efficiency, bandwidth) are opposite to these of non-radiating elements, where the radiation effect is not desir...

Passive and Active Millimeter-Wave Imaging XV, 2012

ABSTRACT Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-co... more ABSTRACT Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-cost portable systems operating at room-temperature with a video-rate speed and capable of delivering acceptable sensitivity at the very low-power consumption levels to become attractive for truly commercial applications. In particular, CMOS technologies are of interest due to their high integration level offered at a high yield that is capable of massive cost reduction of currently existing THz systems. It has been recently demonstrated that CMOS direct detectors achieve the performance comparable or even superior to the today's existing classical THz devices for active imaging operating at room-temperature. So far, however, only single pixels have been used, allowing only a raster-scan operation. To address this obstacle, we present the very initial work on a 1k-pixel camera chip with a completely integrated readout circuitry and with a full video-rate capability at a power consumption of 2.5μW/pixel. The chip is fully compliant with an industrial bulk CMOS technology and it is intended for active imaging applications. It exhibits a pixel pitch of 80μm, defined by a novel on-chip wire ring antenna, and is designed to accommodate silicon hyper-hemispherical lens for a wide operation bandwidth of at least 0.7-1.1 THz.

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2019

This paper presents system-level characterization and performance evaluation for higher-order M-Q... more This paper presents system-level characterization and performance evaluation for higher-order M-QAM modulation formats of a fully-electronic 1-m wireless link with two highly-integrated direct-conversion quadrature TX and RX modules in 0.13-µm SiGe HBT technology operating with a tunable 220-260 GHz LO carrier. With the limited baseband bandwidth of 15 GHz, the maximum achieved data rates for 16-/32-/64-QAM modulation are 90 Gbps (EVM of 14.6%), 90 Gbps (EVM of 11.9%) and 81 Gbps (EVM of 8.7%), respectively.

IEEE International Workshop on Antenna Technology Small Antennas and Novel Metamaterials, 2006.

A coplanar patch antenna suitable for integration with millimeter wave (mmWave) transceiver ICs i... more A coplanar patch antenna suitable for integration with millimeter wave (mmWave) transceiver ICs is presented. The antenna is printed on a fused silica substrate and can be connected to a silicon transceiver via solder balls with 150µm pitch. The antenna was designed and manufactured for the 60GHz industrial scientific medical (ISM) band and shows about 5GHz of bandwidth with high

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)

... process. A treatment of the error boxes measured by the calibration comparison method was pre... more ... process. A treatment of the error boxes measured by the calibration comparison method was presented in [6] and determines the characteristic impedance accounting for only a shunt codact-pad capacitance and conductance. ...

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014

This paper presents recent developments on transmitter and receiver circuit in advanced SiGe tech... more This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct detectors, heterodyne receivers and Radar transceivers for wide-band signal detection. The circuits are attached to a secondary silicon lens and packaged on low-cost FR4 printed circuit boards.

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012

ABSTRACT This paper presents heterojunction bipolar transistor (HBT) based terahertz power detect... more ABSTRACT This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity RI of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.

ABSTRACT Next generation wireless communiaction terminals will demand the use of advanced compone... more ABSTRACT Next generation wireless communiaction terminals will demand the use of advanced component integration process and high density packaging technologies in order to reduce size and to increase performance. The ability of the MCM-D low-cost Large Area Panel Processing technology to provide controlled impedance, microstrip, coplanar structures and integrated thin film passive components with useful performance in the microwave frequency regime is reported in this paper. This technologyis the 4 layer metallisation 1212in 2 and 2424in 2 panels MCM-D developed for digital applications. We show that it is also able to realize RF functions through the integration of of a range of integrated inductors and capacitors. Representative equivalent circuit models for these models are discussed. The analysis of different design options and design parameters for planar spiral inductors is also considered . Special attention is given to the costs driven by area consumption and yield loss. Key words: Large Area PanelProcessing, MCM-D technology, integrated inductors and capacitors I.

ABSTRACT A new low cost thin film substrate technology was developed within the EU research proje... more ABSTRACT A new low cost thin film substrate technology was developed within the EU research project LAP. The project's substrate cost target of 1 US$/inch 2 shall be obtained by using low cost materials and large area panel processing (LAP). This paper presents tests and measurements showing the process accuracy and the geometric variations resulting from low cost manufacturing. The second part is focusing on the impact on RF structure integration and on partitioning aspects for RF chip-package co-design. 1

2011 IEEE International Solid-State Circuits Conference, 2011

ABSTRACT In this paper, recent advances in SiGe HBT device technology are used to demonstrate a 8... more ABSTRACT In this paper, recent advances in SiGe HBT device technology are used to demonstrate a 820GHz TX/RX chipset for active terahertz imaging applications.

32nd European Microwave Conference, 2002, 2002

ABSTRACT The procedures allowing determination of the microstrip and CPW lines characteristic imp... more ABSTRACT The procedures allowing determination of the microstrip and CPW lines characteristic impedance are presented. The procedures are based on the measurement technique of two on-wafer line standards as presented by Carchon et al (1). An initial off-wafer LRM or TRL calibration is assumed. The formulation of the whole extraction problem in terms of the ABCD chain matrix allows us to omit the influence of a difference between complex characteristic impedances of both lines on the S-matrix asymmetry of the feeding transition. On the contrary, the AD-BC=1 condition of its chain matrix is not influenced by this effect. The next novelty lies in the modelling of the CPW-microstrip transition by a symmetric model. This allows to extract the characteristic impedance without using of any fixed transition model and takes automatically into consideration a distributed nature of the transition. The next feature is that a specific treatment of the measured standards enables to extract an equivalent position of the probe-tips along the line. In case of MCM-D different microstrip feed topologies have been analysed and the best possible one has been found.

Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, 2002

IEEE Transactions on Microwave Theory and Techniques, 2006

Page 1. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 8, AUGUST 2006 3387 A ... more Page 1. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 8, AUGUST 2006 3387 A Chip-Scale Packaging Technology for 60-GHz Wireless Chipsets Ullrich R. Pfeiffer, Member, IEEE, Janusz ...

Within the European project LIPS (www.ife.ethz.ch/lips) we are developing a substrate technology ... more Within the European project LIPS (www.ife.ethz.ch/lips) we are developing a substrate technology for an all-planar single- substrate 77GHz radar module for automotive applications. We use an enhanced MCM-D thin-film technology enabling millimeter-wave operation. Compared to the presently known designs the high resolution of the thin-film process eliminates need for post-production tuning. A build up with thick (45um) BCB dielectric, combination

2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220), 2000

2007 IEEE Antennas and Propagation International Symposium, 2007

Future telecommunication aplications will shift more and more to the use of higher frequncies. Mu... more Future telecommunication aplications will shift more and more to the use of higher frequncies. Multichip Modules (MCMs) and MCM technologies are very close to micro- and milimeter-wave systems like transmitter/receivr (T/R) for radars and communication modules for wireless infrastructure links. There are various stringent requirements for MCMs in the frequency range of 1 to 100GHz but one of the most critical requirements is the ability of high yield and high volume production together with the low cost and high RF performance. Integration of RF circuits and elements with digital and analog circuits on the same substrate is essential to reduce the overall cost and physical dimensions of the whole system. One of the most difficult elements to integrate in such a module is the antenna because the technological requirements driven by its performance characteristics (radiation efficiency, bandwidth) are opposite to these of non-radiating elements, where the radiation effect is not desir...

Passive and Active Millimeter-Wave Imaging XV, 2012

ABSTRACT Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-co... more ABSTRACT Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-cost portable systems operating at room-temperature with a video-rate speed and capable of delivering acceptable sensitivity at the very low-power consumption levels to become attractive for truly commercial applications. In particular, CMOS technologies are of interest due to their high integration level offered at a high yield that is capable of massive cost reduction of currently existing THz systems. It has been recently demonstrated that CMOS direct detectors achieve the performance comparable or even superior to the today's existing classical THz devices for active imaging operating at room-temperature. So far, however, only single pixels have been used, allowing only a raster-scan operation. To address this obstacle, we present the very initial work on a 1k-pixel camera chip with a completely integrated readout circuitry and with a full video-rate capability at a power consumption of 2.5μW/pixel. The chip is fully compliant with an industrial bulk CMOS technology and it is intended for active imaging applications. It exhibits a pixel pitch of 80μm, defined by a novel on-chip wire ring antenna, and is designed to accommodate silicon hyper-hemispherical lens for a wide operation bandwidth of at least 0.7-1.1 THz.