Henri Happy - Academia.edu (original) (raw)
Papers by Henri Happy
HAL (Le Centre pour la Communication Scientifique Directe), Oct 29, 2018
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Carbon Nanotubes and Their Applications, 2012
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Annals of Clinical and Medical Case Reports, 2021
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IEEE Transactions on Microwave Theory and Techniques, 2018
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International Journal of Microwave and Wireless Technologies, Oct 1, 2010
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Analytical and Bioanalytical Chemistry, Jun 3, 2023
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This paper relates the state of the art of the HEMT low noise technologies for the space applicat... more This paper relates the state of the art of the HEMT low noise technologies for the space applications at millimeter wave and specially for the earth observation in the G-band (140 – 220 GHz)).The different III-V technologies (HEMT and LNA)and their associated performance are presented.Parameters limiting the improvement of high frequency characteristics for HEMTs with the downscaling process are studied.
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2017 75th Annual Device Research Conference (DRC), 2017
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Annales Des Télécommunications, 2001
ABSTRACT Ce papier présente un état actuel des performances de puissance et de bruit des transist... more ABSTRACT Ce papier présente un état actuel des performances de puissance et de bruit des transistors à effet de champ à gaz ďélectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dépendance des caractéristiques électriques de ces composants avec la structure de couche (matériaux employés, épaisseursï) et la géométric Enfin on compare les performances en fréquences de coupure, puissance et bruit de différentes structures de hemts (p-hemt, lm-hemt, mm-hemt). This paper presents a tutorial review on the High Electron Mobility Transistors (HEMTs)for low-noise and power applications at millimeter wave range frequencies. The major parameters to achieve high performance with such devices are discussed. Present status on power and noise performances is given for InAlAs/InGaAs HEMTs on InP and GaAs substrates.
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Suchamplifier hasbeenpackaged witha highresponsivity photodiode intoa fiber pig-tailed module. Ey... more Suchamplifier hasbeenpackaged witha highresponsivity photodiode intoa fiber pig-tailed module. Eyediagrams Circuits werefabricated using acomnercially available measurements demonstrate thesuccessful high-speed operation DOlMHprocess developedby OMMIC.This process isbased ofthephotoreceiver. onlownoise 0.1pmmetamorphic HEMTdevices with Index Terms- distributed amplifiers, metamorphic cHMTm s as * * w ~~~~~~~~~current cut-off frequency Ft of.150,maxk m MM[Cs, photorecdver, fiber optic communication, microstrip circudts.
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Ce travail concerne la modelisation de composants a Effet de Champ en regime lineaire, integree a... more Ce travail concerne la modelisation de composants a Effet de Champ en regime lineaire, integree a un logiciel convivial nomme HELENA, pour «Hemt ELEctrical properties and Noise Analysis». HELENA est un logiciel facile d'emploi, qui permet d'obtenir : la loi de commande de charges de la structure des couches sous la grille (caracteristique C-V), les caracteristiques statiques du transistor, le schema equivalent intrinseque petit signal, les performances de bruit du transistor extrinseque, les parametres S et les differents gains. La modelisation est basee sur l'approche quasi-bidimensionnelle, qui est amelioree de facon significative: 1) Nous tenons compte de la loi de commande de charges exacte de la structure pour l'analyse du composant. 2) Les parametres du schema equivalent petit signal sont determines par la methode de la ligne active. 3) Les performances de bruit du transistor sont calculees en utilisant le formalisme des matrices de correlation, couple a la met...
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EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015
A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain... more A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.
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2014 44th European Microwave Conference, 2014
This paper deals with both DC and high frequency characterization of graphene devices, associated... more This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon FET (GNR FET), a compact electrical model was presented accounting the DC and HF characteristics in broad range of operating conditions. The differences between DC and pulsed I-V characterizations of the GNR FET are investigated and compared to simulations. The small signal behavior and some figure of merits (FOM) like current gain cut-off frequency ft maximum oscillation frequency fmax. The nonlinear modelling of GNR FET is becoming of prime importance along with technological efforts to demonstrate the actual potential of this promising technology. This approach was also applied to conventional GFET, with a large flake of graphene used as a device channel.
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HAL (Le Centre pour la Communication Scientifique Directe), 2011
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2021 Device Research Conference (DRC)
Recently, low-power analog switches have been enjoying rapidly growing interest owing to their pr... more Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (F CO =1/2πR ON C OFF ), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.
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HAL (Le Centre pour la Communication Scientifique Directe), Oct 29, 2018
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Bookmarks Related papers MentionsView impact
Carbon Nanotubes and Their Applications, 2012
Bookmarks Related papers MentionsView impact
Annals of Clinical and Medical Case Reports, 2021
Bookmarks Related papers MentionsView impact
IEEE Transactions on Microwave Theory and Techniques, 2018
Bookmarks Related papers MentionsView impact
International Journal of Microwave and Wireless Technologies, Oct 1, 2010
Bookmarks Related papers MentionsView impact
Analytical and Bioanalytical Chemistry, Jun 3, 2023
Bookmarks Related papers MentionsView impact
This paper relates the state of the art of the HEMT low noise technologies for the space applicat... more This paper relates the state of the art of the HEMT low noise technologies for the space applications at millimeter wave and specially for the earth observation in the G-band (140 – 220 GHz)).The different III-V technologies (HEMT and LNA)and their associated performance are presented.Parameters limiting the improvement of high frequency characteristics for HEMTs with the downscaling process are studied.
Bookmarks Related papers MentionsView impact
2017 75th Annual Device Research Conference (DRC), 2017
Bookmarks Related papers MentionsView impact
Annales Des Télécommunications, 2001
ABSTRACT Ce papier présente un état actuel des performances de puissance et de bruit des transist... more ABSTRACT Ce papier présente un état actuel des performances de puissance et de bruit des transistors à effet de champ à gaz ďélectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dépendance des caractéristiques électriques de ces composants avec la structure de couche (matériaux employés, épaisseursï) et la géométric Enfin on compare les performances en fréquences de coupure, puissance et bruit de différentes structures de hemts (p-hemt, lm-hemt, mm-hemt). This paper presents a tutorial review on the High Electron Mobility Transistors (HEMTs)for low-noise and power applications at millimeter wave range frequencies. The major parameters to achieve high performance with such devices are discussed. Present status on power and noise performances is given for InAlAs/InGaAs HEMTs on InP and GaAs substrates.
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
Suchamplifier hasbeenpackaged witha highresponsivity photodiode intoa fiber pig-tailed module. Ey... more Suchamplifier hasbeenpackaged witha highresponsivity photodiode intoa fiber pig-tailed module. Eyediagrams Circuits werefabricated using acomnercially available measurements demonstrate thesuccessful high-speed operation DOlMHprocess developedby OMMIC.This process isbased ofthephotoreceiver. onlownoise 0.1pmmetamorphic HEMTdevices with Index Terms- distributed amplifiers, metamorphic cHMTm s as * * w ~~~~~~~~~current cut-off frequency Ft of.150,maxk m MM[Cs, photorecdver, fiber optic communication, microstrip circudts.
Bookmarks Related papers MentionsView impact
Ce travail concerne la modelisation de composants a Effet de Champ en regime lineaire, integree a... more Ce travail concerne la modelisation de composants a Effet de Champ en regime lineaire, integree a un logiciel convivial nomme HELENA, pour «Hemt ELEctrical properties and Noise Analysis». HELENA est un logiciel facile d'emploi, qui permet d'obtenir : la loi de commande de charges de la structure des couches sous la grille (caracteristique C-V), les caracteristiques statiques du transistor, le schema equivalent intrinseque petit signal, les performances de bruit du transistor extrinseque, les parametres S et les differents gains. La modelisation est basee sur l'approche quasi-bidimensionnelle, qui est amelioree de facon significative: 1) Nous tenons compte de la loi de commande de charges exacte de la structure pour l'analyse du composant. 2) Les parametres du schema equivalent petit signal sont determines par la methode de la ligne active. 3) Les performances de bruit du transistor sont calculees en utilisant le formalisme des matrices de correlation, couple a la met...
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015
A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain... more A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.
Bookmarks Related papers MentionsView impact
2014 44th European Microwave Conference, 2014
This paper deals with both DC and high frequency characterization of graphene devices, associated... more This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon FET (GNR FET), a compact electrical model was presented accounting the DC and HF characteristics in broad range of operating conditions. The differences between DC and pulsed I-V characterizations of the GNR FET are investigated and compared to simulations. The small signal behavior and some figure of merits (FOM) like current gain cut-off frequency ft maximum oscillation frequency fmax. The nonlinear modelling of GNR FET is becoming of prime importance along with technological efforts to demonstrate the actual potential of this promising technology. This approach was also applied to conventional GFET, with a large flake of graphene used as a device channel.
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
HAL (Le Centre pour la Communication Scientifique Directe), 2011
Bookmarks Related papers MentionsView impact
2021 Device Research Conference (DRC)
Recently, low-power analog switches have been enjoying rapidly growing interest owing to their pr... more Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (F CO =1/2πR ON C OFF ), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.
Bookmarks Related papers MentionsView impact