IVO LUBIS - Academia.edu (original) (raw)
Papers by IVO LUBIS
Journal of Structural Biology, 2007
Biological trajectories can be characterized by transient patterns that may provide insight into ... more Biological trajectories can be characterized by transient patterns that may provide insight into the interactions of the moving object with its immediate environment. The accurate and automated identification of trajectory motifs is important for the understanding of the underlying mechanisms. In this work, we develop a novel trajectory segmentation algorithm based on supervised support vector classification. The algorithm is validated on synthetic data and applied to the identification of trajectory fingerprints of fluorescently tagged human adenovirus particles in live cells. In virus trajectories on the cell surface, periods of confined motion, slow drift, and fast drift are efficiently detected. Additionally, directed motion is found for viruses in the cytoplasm. The algorithm enables the linking of microscopic observations to molecular phenomena that are critical in many biological processes, including infectious pathogen entry and signal transduction.
Physica C-superconductivity and Its Applications, 1992
Tungsten-silicon multilayers were prepared by electron beam deposition in ultrahigh vacuum. The n... more Tungsten-silicon multilayers were prepared by electron beam deposition in ultrahigh vacuum. The number of bilayers and their thicknesses were 10 and 2-24 nm, respectively. Structural properties were analyzed by low and large angle X-ray diffraction and TEM. Tungsten films in multilayers were amorphous for the layer thickness dw_-< 4 nm. Multilayers with dw = 1 and 2 nm were superconducting with T¢ = 2.72-4.21 K. Superconductivity was preserved in samples annealed up to 650 °C for 40 s. At higher annealing temperatures the formation of crystalline tungsten silicides was observed, simultaneously the periodicity of multilayers was destroyed and superconductivity was lost. 0921-4534/92/$05.00
Thin Solid Films, 2004
Recently, MoySi multilayer reflectors have been gaining industry interest as a promising choice f... more Recently, MoySi multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF yAr process regime shows the capability for highly anisotropic etching of sub (400 nm feature sizes in MoySi test 3 multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottomlevel polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in MoySi multilayers of 858, without undercut, bowing and ripples resulting in smooth sidewalls are achieved. ᮊ
Physica Status Solidi (a), 1996
Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with differ... more Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with different thicknesses of SiO2 underlayer were melted and crystallized using a XeCl laser beam. The energy densities of the beam F = 150 to 450 mJ/cm2 were chosen according to the results of calculations of the temperature evolution within the samples. A-Si films were irradiated by n = 1, 10, or 100 laser pulses. The samples were analyzed by X-ray diffraction (XRD), grazing incidence XRD (GI XRD), transmission and scanning electron microscopy. The influence of the underlying SiO2 thickness on the crystallization was studied. It was shown that the complete or near-complete melting of a-Si and higher temperature gradients in the melted Si (depending on the SiO2 thickness) are favourable conditions for Si crystallization. Overmelting into the oxide resulted in a lower quality of Si film crystallinity.
Journal of Non-crystalline Solids, 1995
Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates were melted... more Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates were melted and recrystallized using a XeCl laser beam. The energy densities of the beam were chosen according to the results of calculations of the temperature evolution within the samples. The influence of the underlying SiO2 thickness on the crystallization was studied. The samples were analyzed by X-ray
Applied Surface Science, 1993
The temperature dependence of the sheet resistance of e-beam evaporated W/Si multilayers was inve... more The temperature dependence of the sheet resistance of e-beam evaporated W/Si multilayers was investigated. A positive temperature coefficient of resistivity (TCR) 190-600 ppm/K was obtained for multilayers with crystalline tungsten layers ( dw > 4 nm). Multilayers with amorphous tungsten layers 1-4 nm thick revealed nom-metallic resistivity behaviour with a negative TCR, -(100-300) ppm/K in the temperature range 1.8-300 K, and were superconducting with the superconducting transition temperature Tc up to 4.21 K. The resistivity behaviour of the amorphous W/Si multilayers with Si layer thicknesses 1-10 nm can be described within the framework of 3D weak localization and interaction models. At temperatures close to Tc superconducting fluctuations decrease the resistance of these samples. At temperatures above Tc both effects can be comparable, resulting in a maximum in the temperature dependence of the resistance. A relatively strong coupling between metallic layers was observed. This coupling could originate from mixing at the W/Si interfaces and interdiffusion during the deposition and subsequent annealing. The different resistivity behaviour of amorphous tungsten monolayers strongly supports this assumption.
Journal of Materials Research, 1993
ISTILAH DAN PENGERTIAN HUKUM PERDATA Istilah hukum perdata pertama kali diperkenalkan oleh Prof. ... more ISTILAH DAN PENGERTIAN HUKUM PERDATA Istilah hukum perdata pertama kali diperkenalkan oleh Prof. Djojodiguno sebagai teremahan dariburgerlijkrecht pada masa penduduka jepang. Di samping istilah itu, sinonim hukum perdata adalah civielrechtdan privatrecht.
Journal of Structural Biology, 2007
Biological trajectories can be characterized by transient patterns that may provide insight into ... more Biological trajectories can be characterized by transient patterns that may provide insight into the interactions of the moving object with its immediate environment. The accurate and automated identification of trajectory motifs is important for the understanding of the underlying mechanisms. In this work, we develop a novel trajectory segmentation algorithm based on supervised support vector classification. The algorithm is validated on synthetic data and applied to the identification of trajectory fingerprints of fluorescently tagged human adenovirus particles in live cells. In virus trajectories on the cell surface, periods of confined motion, slow drift, and fast drift are efficiently detected. Additionally, directed motion is found for viruses in the cytoplasm. The algorithm enables the linking of microscopic observations to molecular phenomena that are critical in many biological processes, including infectious pathogen entry and signal transduction.
Physica C-superconductivity and Its Applications, 1992
Tungsten-silicon multilayers were prepared by electron beam deposition in ultrahigh vacuum. The n... more Tungsten-silicon multilayers were prepared by electron beam deposition in ultrahigh vacuum. The number of bilayers and their thicknesses were 10 and 2-24 nm, respectively. Structural properties were analyzed by low and large angle X-ray diffraction and TEM. Tungsten films in multilayers were amorphous for the layer thickness dw_-< 4 nm. Multilayers with dw = 1 and 2 nm were superconducting with T¢ = 2.72-4.21 K. Superconductivity was preserved in samples annealed up to 650 °C for 40 s. At higher annealing temperatures the formation of crystalline tungsten silicides was observed, simultaneously the periodicity of multilayers was destroyed and superconductivity was lost. 0921-4534/92/$05.00
Thin Solid Films, 2004
Recently, MoySi multilayer reflectors have been gaining industry interest as a promising choice f... more Recently, MoySi multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF yAr process regime shows the capability for highly anisotropic etching of sub (400 nm feature sizes in MoySi test 3 multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottomlevel polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in MoySi multilayers of 858, without undercut, bowing and ripples resulting in smooth sidewalls are achieved. ᮊ
Physica Status Solidi (a), 1996
Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with differ... more Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with different thicknesses of SiO2 underlayer were melted and crystallized using a XeCl laser beam. The energy densities of the beam F = 150 to 450 mJ/cm2 were chosen according to the results of calculations of the temperature evolution within the samples. A-Si films were irradiated by n = 1, 10, or 100 laser pulses. The samples were analyzed by X-ray diffraction (XRD), grazing incidence XRD (GI XRD), transmission and scanning electron microscopy. The influence of the underlying SiO2 thickness on the crystallization was studied. It was shown that the complete or near-complete melting of a-Si and higher temperature gradients in the melted Si (depending on the SiO2 thickness) are favourable conditions for Si crystallization. Overmelting into the oxide resulted in a lower quality of Si film crystallinity.
Journal of Non-crystalline Solids, 1995
Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates were melted... more Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates were melted and recrystallized using a XeCl laser beam. The energy densities of the beam were chosen according to the results of calculations of the temperature evolution within the samples. The influence of the underlying SiO2 thickness on the crystallization was studied. The samples were analyzed by X-ray
Applied Surface Science, 1993
The temperature dependence of the sheet resistance of e-beam evaporated W/Si multilayers was inve... more The temperature dependence of the sheet resistance of e-beam evaporated W/Si multilayers was investigated. A positive temperature coefficient of resistivity (TCR) 190-600 ppm/K was obtained for multilayers with crystalline tungsten layers ( dw > 4 nm). Multilayers with amorphous tungsten layers 1-4 nm thick revealed nom-metallic resistivity behaviour with a negative TCR, -(100-300) ppm/K in the temperature range 1.8-300 K, and were superconducting with the superconducting transition temperature Tc up to 4.21 K. The resistivity behaviour of the amorphous W/Si multilayers with Si layer thicknesses 1-10 nm can be described within the framework of 3D weak localization and interaction models. At temperatures close to Tc superconducting fluctuations decrease the resistance of these samples. At temperatures above Tc both effects can be comparable, resulting in a maximum in the temperature dependence of the resistance. A relatively strong coupling between metallic layers was observed. This coupling could originate from mixing at the W/Si interfaces and interdiffusion during the deposition and subsequent annealing. The different resistivity behaviour of amorphous tungsten monolayers strongly supports this assumption.
Journal of Materials Research, 1993
ISTILAH DAN PENGERTIAN HUKUM PERDATA Istilah hukum perdata pertama kali diperkenalkan oleh Prof. ... more ISTILAH DAN PENGERTIAN HUKUM PERDATA Istilah hukum perdata pertama kali diperkenalkan oleh Prof. Djojodiguno sebagai teremahan dariburgerlijkrecht pada masa penduduka jepang. Di samping istilah itu, sinonim hukum perdata adalah civielrechtdan privatrecht.