James Victory - Academia.edu (original) (raw)

Papers by James Victory

This paper presents a computer aided method for the analyses and simulation of a non -linear math... more This paper presents a computer aided method for the analyses and simulation of a non -linear mathematical model of a CNC Lathe machine tool. The derived model consist of the controller, axis drive and the spindle drive of a CNC turning machine and their connection through the cutting process. The overall model uses a modular multi-model approach to prototype the

2007 IEEE International Conference on Microelectronic Test Structures, 2007

Scalable models for circuit design components such as inductors are a requirement for state of th... more Scalable models for circuit design components such as inductors are a requirement for state of the art design environments. Accurate Spice-level modeling requires physical based models and an accurate RF characterization process. In this paper we present a semi-analytical de-embedding technique that accounts for the magnetic coupling between test structure feed-lines and device under test (DUT). The method significantly improves

IEEE Custom Integrated Circuits Conference 2006, 2006

Scalable models for circuit design components such as inductors are a requirement for state of th... more Scalable models for circuit design components such as inductors are a requirement for state of the art design environments. Octagonal inductors are preferred over square inductors due to their higher Q factor. In this paper the authors present a model methodology for broad-band scalable octagonal inductors. Measurement data and electromagnetic simulation results are presented to demonstrate the accuracy of the

Social Education, 1982

... Related Items: Show Related Items. Click on any of the links below to perform a new search. T... more ... Related Items: Show Related Items. Click on any of the links below to perform a new search. Title: Jamestown: A Site Selection Exercise. Authors: Victory, James. ...

2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, 2008

As consumer wireless protocols increase in complexity (3G and UMTS) and come under intense price ... more As consumer wireless protocols increase in complexity (3G and UMTS) and come under intense price pressure, wireless designers are faced with significant challenges to meet overall form factor and cost requirements. Although CMOS base band chips continue down the path of lower cost and smaller form factor, the scaling and cost of Front End Modules (FEMs) and RF transceivers pose

This paper presents a physically based model for LDMOS transistors. The model advances the state-... more This paper presents a physically based model for LDMOS transistors. The model advances the state-of-the-art by using a formulation applicable across a wide voltage range, by accounting for the distributed parasitic metal effects, and by properly modeling the bias dependence of parasitic capacitances. The model is implemented in Motorola's internal simulator MCSPICE.

MOSFETs with different drain and source series resistance, R, and RS, are common both in medium a... more MOSFETs with different drain and source series resistance, R, and RS, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of R , -RS . This paper presents the concept and the results of a new, simple, and physical extraction technique to determine R , -RS , purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling.

2010 IEEE 15th Conference on Emerging Technologies & Factory Automation (ETFA 2010), 2010

Induction motor failure modes can be instantaneous or progressive. This paper proposes a model-ba... more Induction motor failure modes can be instantaneous or progressive. This paper proposes a model-based methodology employed to attempt to identify the root causes of the main fault modes of progressive failures. Utilising indicators from the monitoring of three-phase motor currents, this paper explains how leading-edge and traditional theories could be combined and optimised to provide an integrated software algorithm set

shows the mathematical representation of BPV in action for the PSP model. The variances of e are ... more shows the mathematical representation of BPV in action for the PSP model. The variances of e are input directly from the PCM. The PSP sensitivity matrix is calculated directly within the circuit simulator. The system determines the variances of p (σ 2 δp ), which guarantees alignment of the simulated and measured variances of e. The 1-σ values of p are then input to the Monte Carlo statistical simulation tool within the design environment or scaled to produce corner models. The results are accurate in most cases to < 0.5 percent. This technique is employed across all device types, utilizing all the available PCM. In addition to accurate simulation of individual e, physical correlations among

We present an improved procedure for extracting parasitic capacitance parameters and gate current... more We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactor model. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/Pwell tunneling current sub-model.

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153), 2001

Performing accurate, robust and repeatable 1/f measurement is critical to meaningful modeling and... more Performing accurate, robust and repeatable 1/f measurement is critical to meaningful modeling and simulation of 1/f noise. Accurate measurement and modeling of 1/f noise of such devices as deep submicron CMOS, HBTs, and RF passive components is critical to design of RF circuits. In this paper, a new on-wafer flicker noise characterization system including test structure methodology is presented. The

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000

Including the effects of parasitic metal resistance and their dependence on device layout is cruc... more Including the effects of parasitic metal resistance and their dependence on device layout is crucial to accurate modeling of large area LDMOS devices. This paper presents the derivation and use of compact analytical model equations for accurately predicting the Rdson performance of large area LDMOS devices. Results are compared with both numerical simulations and experimental measurements

Proceedings of 1994 IEEE Workshop on Power Electronics in Transportation, 1994

... This is the first time a charge-sheet approach has been successfully used in modeling a power... more ... This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. Page 3. ... The equation for conduction through the itb sub-interval is given in tem of the inversion charge and electron quasi-Fermi level as ... 4 and Vo=qQJ+/C: 1181. ...

IEEE Solid-State Circuits Magazine, 2014

The SP-HV model and its capabilities.

Compact Modeling, 2010

... It is convenient to set q,-: q,-Q+ Aq; and q,-Q: q,-Q+ Aq.-0 Where q,-Q is the quiescent poin... more ... It is convenient to set q,-: q,-Q+ Aq; and q,-Q: q,-Q+ Aq.-0 Where q,-Q is the quiescent point value of q,-corresponding to a dc bias of Vgb: VQ; Aq, and Aq,-Q are the complex amplitudes of the harmonic com-ponents of q,-and q,-0, respectively. ...

This paper presents a computer aided method for the analyses and simulation of a non -linear math... more This paper presents a computer aided method for the analyses and simulation of a non -linear mathematical model of a CNC Lathe machine tool. The derived model consist of the controller, axis drive and the spindle drive of a CNC turning machine and their connection through the cutting process. The overall model uses a modular multi-model approach to prototype the

2007 IEEE International Conference on Microelectronic Test Structures, 2007

Scalable models for circuit design components such as inductors are a requirement for state of th... more Scalable models for circuit design components such as inductors are a requirement for state of the art design environments. Accurate Spice-level modeling requires physical based models and an accurate RF characterization process. In this paper we present a semi-analytical de-embedding technique that accounts for the magnetic coupling between test structure feed-lines and device under test (DUT). The method significantly improves

IEEE Custom Integrated Circuits Conference 2006, 2006

Scalable models for circuit design components such as inductors are a requirement for state of th... more Scalable models for circuit design components such as inductors are a requirement for state of the art design environments. Octagonal inductors are preferred over square inductors due to their higher Q factor. In this paper the authors present a model methodology for broad-band scalable octagonal inductors. Measurement data and electromagnetic simulation results are presented to demonstrate the accuracy of the

Social Education, 1982

... Related Items: Show Related Items. Click on any of the links below to perform a new search. T... more ... Related Items: Show Related Items. Click on any of the links below to perform a new search. Title: Jamestown: A Site Selection Exercise. Authors: Victory, James. ...

2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, 2008

As consumer wireless protocols increase in complexity (3G and UMTS) and come under intense price ... more As consumer wireless protocols increase in complexity (3G and UMTS) and come under intense price pressure, wireless designers are faced with significant challenges to meet overall form factor and cost requirements. Although CMOS base band chips continue down the path of lower cost and smaller form factor, the scaling and cost of Front End Modules (FEMs) and RF transceivers pose

This paper presents a physically based model for LDMOS transistors. The model advances the state-... more This paper presents a physically based model for LDMOS transistors. The model advances the state-of-the-art by using a formulation applicable across a wide voltage range, by accounting for the distributed parasitic metal effects, and by properly modeling the bias dependence of parasitic capacitances. The model is implemented in Motorola's internal simulator MCSPICE.

MOSFETs with different drain and source series resistance, R, and RS, are common both in medium a... more MOSFETs with different drain and source series resistance, R, and RS, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of R , -RS . This paper presents the concept and the results of a new, simple, and physical extraction technique to determine R , -RS , purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling.

2010 IEEE 15th Conference on Emerging Technologies & Factory Automation (ETFA 2010), 2010

Induction motor failure modes can be instantaneous or progressive. This paper proposes a model-ba... more Induction motor failure modes can be instantaneous or progressive. This paper proposes a model-based methodology employed to attempt to identify the root causes of the main fault modes of progressive failures. Utilising indicators from the monitoring of three-phase motor currents, this paper explains how leading-edge and traditional theories could be combined and optimised to provide an integrated software algorithm set

shows the mathematical representation of BPV in action for the PSP model. The variances of e are ... more shows the mathematical representation of BPV in action for the PSP model. The variances of e are input directly from the PCM. The PSP sensitivity matrix is calculated directly within the circuit simulator. The system determines the variances of p (σ 2 δp ), which guarantees alignment of the simulated and measured variances of e. The 1-σ values of p are then input to the Monte Carlo statistical simulation tool within the design environment or scaled to produce corner models. The results are accurate in most cases to < 0.5 percent. This technique is employed across all device types, utilizing all the available PCM. In addition to accurate simulation of individual e, physical correlations among

We present an improved procedure for extracting parasitic capacitance parameters and gate current... more We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactor model. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/Pwell tunneling current sub-model.

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153), 2001

Performing accurate, robust and repeatable 1/f measurement is critical to meaningful modeling and... more Performing accurate, robust and repeatable 1/f measurement is critical to meaningful modeling and simulation of 1/f noise. Accurate measurement and modeling of 1/f noise of such devices as deep submicron CMOS, HBTs, and RF passive components is critical to design of RF circuits. In this paper, a new on-wafer flicker noise characterization system including test structure methodology is presented. The

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000

Including the effects of parasitic metal resistance and their dependence on device layout is cruc... more Including the effects of parasitic metal resistance and their dependence on device layout is crucial to accurate modeling of large area LDMOS devices. This paper presents the derivation and use of compact analytical model equations for accurately predicting the Rdson performance of large area LDMOS devices. Results are compared with both numerical simulations and experimental measurements

Proceedings of 1994 IEEE Workshop on Power Electronics in Transportation, 1994

... This is the first time a charge-sheet approach has been successfully used in modeling a power... more ... This is the first time a charge-sheet approach has been successfully used in modeling a power MOSFET. Page 3. ... The equation for conduction through the itb sub-interval is given in tem of the inversion charge and electron quasi-Fermi level as ... 4 and Vo=qQJ+/C: 1181. ...

IEEE Solid-State Circuits Magazine, 2014

The SP-HV model and its capabilities.

Compact Modeling, 2010

... It is convenient to set q,-: q,-Q+ Aq; and q,-Q: q,-Q+ Aq.-0 Where q,-Q is the quiescent poin... more ... It is convenient to set q,-: q,-Q+ Aq; and q,-Q: q,-Q+ Aq.-0 Where q,-Q is the quiescent point value of q,-corresponding to a dc bias of Vgb: VQ; Aq, and Aq,-Q are the complex amplitudes of the harmonic com-ponents of q,-and q,-0, respectively. ...