Kirill Shcherbachev - Academia.edu (original) (raw)
Papers by Kirill Shcherbachev
physica status solidi (a), 2007
Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10 16 cm... more Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10 16 cm -2 . After implantation, Si : H samples were annealed at 450 and 650 °C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as-implanted and processed Si : H was determined by X-ray scattering methods. Two types of defect clusters contributing to diffuse scattering were revealed: (i) the defects produced by hydrogen diffusion, characterized by small dimensions, with concentration dependent on annealing temperature; (ii) rather large bubbles and platelets produced due to hydrogen agglomeration at defects with negative dilatation. The samples annealed under high pressure contain large defects with the double force tensor equivalent to the dislocation loops one. It is found that the high pressure heat treatment retards the hydrogen diffusion. Distribution of diffuse scattering around the 004 reciprocal lattice point for each type of defects is simulated and compared with the experimental data.
Acta Crystallographica Section A Foundations of Crystallography, 2005
physica status solidi (RRL) - Rapid Research Letters, 2015
Russian Microelectronics, 2011
ABSTRACT This paper presents the analysis of peculiarities of defect formation in the course of t... more ABSTRACT This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers.
physica status solidi (a), 2011
ABSTRACT The defect structure of the layer damaged by implantation with 64Zn+ ions and its evolut... more ABSTRACT The defect structure of the layer damaged by implantation with 64Zn+ ions and its evolution during subsequent annealing was studied by high-resolution X-ray diffraction combined with secondary ion mass spectrometry and Auger electron spectroscopy methods. The samples were pieces of n-type Si(001) wafer cut from a Czohralski grown ingot. The samples were implanted with 64Zn+ ions at an energy of 100 keV and an ion dose of 2 × 1014 cm−2 with subsequent annealing at 400 °C for 60 min and 700 °C for 10 min. The strain and Debye–Waller depth profiles determined from the diffraction patterns were analyzed and compared to Zn profiles. Annealing leads to significant changes in the shape of the profiles. These changes can be caused by annihilation of Frenkel pair components, redistribution of both radiation-induced point defects and the implanted impurity, and quasi-chemical reactions between point defects and implanted impurity. Analysis of Si(-2-24) reciprocal space maps confirms that the damaged layer remains fully coherent to the Si matrix in as-implanted state and after the heat treatments. The increase of X-ray diffuse scattering intensity after annealing is caused by clustering of radiation-induced point defects and implanted Zn atoms.
According to established ideas, the irradiation by energetic ions induces a significant number of... more According to established ideas, the irradiation by energetic ions induces a significant number of point defects (1). This process is multi-stage and includes generation of radiation induced vacancies and interstitial atoms (Frenkel pairs). The subsequent motion of these defects towards the surface and internal interfaces, as well as their interaction with each other, and with other imperfections of an irradiated sample result in the formation of stable complexes of defects. The real structure of the layer damaged by implantation is determined by these secondary processes. The amorphisation of the damaged layer proceeds by the generation and growth of radiation-induced point defect clusters. The vacancy and interstitial-type clusters are spatially separated: the former are located closer to the surface than the latter. Using a high-resolution X-ray diffraction method on a conventional diffractometer it was found (2) that the growth of vacancy-type clusters leads to amorphization of t...
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by mole... more A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers. © 2000 MAIK "Nauka/Interperiodica".
The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scatter... more The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 mm. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.
Semiconductors, 2006
Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) ... more Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) and to full-spectrum reactor neutrons with the ratio between the flux densities of slow and fast neutrons ϕ sn / ϕ fn ≈ 1 are studied. It is shown that, in regard to the effect of fast neutrons on the lattice spacing, two portions can be distinguished in its dependence on the irradiation dose. At small fluences of fast neutrons ( F fn < 2.5 × 10 17 cm -2 ), no increase in the lattice spacing is observed. As follows from the diffuse X-ray scattering data, in this region of fluences, the clusters of vacancies dissociate and the number of small-sized interstitial-type clusters increases. At F fn > 2.5 × 10 17 cm -2 , the lattice spacing increases linearly with increasing fluences of neutrons, and numerous small-sized vacancy clusters and interstitial clusters capable of trapping the Sn dopant atoms are formed. Heat treatment of the exposed samples at temperatures up to 400 ° C results in complete restoration of the lattice spacing.
Physics of the Solid State, 2003
Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treat... more Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450 ° C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.
physica status solidi (a), 2011
ABSTRACT An investigation into the influence of implantation conditions (dose, energy, and target... more ABSTRACT An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He+ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.
physica status solidi (a), 2007
The differences in the secondary processes proceeding in the silicon layer of SOI and reference b... more The differences in the secondary processes proceeding in the silicon layer of SOI and reference bulk silicon wafers are revealed by using High-Resolution X-ray diffraction and Rutherford Backscattering spectroscopy methods. The damage depth profiles in the implanted layers described by both strain and static Debye -Waller factor profiles, were reconstructed from the diffraction patterns using an autofitting procedure, based on a genetic algorithm. The contribution of diffuse scattering was excluded using the triplecrystal diffractometry technique. The defect density profiles were obtained from the RBS/Channelling measurements, which were carried out using 4 He + beam at 2.0 MeV. The DICADA code, based on the theoretical description of dechanneling was used to interpret the RBS/C data. Accumulation kinetics, spatial distribution, and concentration of radiation-induced defects in the topmost silicon layer of SOI and a bulk silicon were shown to be essentially different. The influence of the fields was shown to lead to the loss of crystallinity of the thin surface layer of silicon in SOI due to accumulation of vacancy-type defects and increase of concentration of interstitial atoms near the internal interphase boundary "Si -SiO 2 ".
physica status solidi (a), 2007
ABSTRACT A high resolution X-ray diffraction method has been effectively used for the structural ... more ABSTRACT A high resolution X-ray diffraction method has been effectively used for the structural characterization of InP porous layers. It was revealed that strong diffuse scattering from pores around reciprocal lattice points does depend on the azimuth positions of samples. To extract structural information about porous layers fabricated under different conditions theoretical analysis of the measured reciprocal space maps (RSM) was performed. The statistical dynamical X-ray diffraction theory was used to describe coherent and diffuse scattering from a layer with cylindrical pores. A numerical analysis of the RSMs for two azimuth positions φ (φ = 0 and φ = 90°) and detailed sections of RSMs (linescans) allowed determination of the radius, the length of the pores and tilting angle with respect to the surface normal. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Physica B: Condensed Matter, 2006
The structural transformations in InSb crystals irradiated with fast neutrons (E40:1 MeV ) and th... more The structural transformations in InSb crystals irradiated with fast neutrons (E40:1 MeV ) and the full spectrum of reactor neutrons with the ratio of the slow to fast neutron fluxes j sn /j fn E1 are studied. Two ranges on the dose dependence can be selected according to the influence of fast neutron irradiation on the lattice parameter. Increase of the lattice parameter is not observed at the low flux (F fn o2:5 Â 10 17 cm À2 ). As it follows from the X-ray diffuse scattering analysis, vacancy-type clusters dissociate in this range, and the number of small interstitial-type clusters simultaneously increases in this range. At F fn 42:5 Â 10 17 cm À2 the lattice parameter linearly increases with flux. A great number of small interstitial-and vacancy-type clusters, which can trap Sn impurity atoms, are formed. The heat treatment of irradiated samples up to 400 1C completely recovers the values of the lattice parameter. r
Physica B: Condensed Matter, 2009
ABSTRACT The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffus... more ABSTRACT The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 μm. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.
Physica B: Condensed Matter, 2006
The multiple quantum wells (MQW) Mg 0.27 Zn 0.73 O/ZnO have been grown by pulsed laser deposition... more The multiple quantum wells (MQW) Mg 0.27 Zn 0.73 O/ZnO have been grown by pulsed laser deposition method with different well width L w . The optical and structural characteristics of MQW Mg 0.27 Zn 0.73 O/ZnO have been investigated. The quantum confinement effect showing up in the blue shift of exciton peak in low temperature (8 K) photoluminescence spectra at well width reduction has been studied. It is established that intensity exciton peak I ex and Einstein's characteristic temperature Θ Е increase at reduction of well width L w . It is revealed that the discontinuity ratio of conduction and a valence bands in heterostructure Mg 0.27 Zn 0.73 O/ZnO is 0.65/0.35 that corresponds to the literature.
Journal of Physics D: Applied Physics, 2005
ABSTRACT The effect of in situ photoexcitation on the generation of structure defects in Si cryst... more ABSTRACT The effect of in situ photoexcitation on the generation of structure defects in Si crystals implanted by Ar+ and Ne+ ions was studied using high-resolution x-ray diffraction. Photoexcitation was found to decrease the residual concentration of radiation-induced point defects in the case of low radiation damage (low doses, high energies) leading to annihilation of Frenkel pairs. For heavy damage (high doses, low implantation temperatures, low energies), photoexcitation contributes to amorphization of the damaged layer, which manifests itself as the formation and growth of clusters of radiation-induced point defects. Thus, in situ photoexcitation speeds up secondary processes, and the predominance of one or other process is stipulated by the degree of supersaturation of the solid solution of radiation-induced point defects.
Journal of Crystal Growth, 1998
Buried cobalt disilicide layers have been synthesized in Si by high-dose Co+ implantation and ann... more Buried cobalt disilicide layers have been synthesized in Si by high-dose Co+ implantation and annealing. The implanted doses have been 1017 and 3×1017ions/cm2, and after implantation the samples have been annealed in a one (600°C, 1h) or two step (600°C, 1h+1000°C, 30min) process. The detailed characterization of the samples has been performed by SIMS, XPS, TEM, XRD and Raman scattering
Journal of Applied Crystallography, 2013
A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy an... more A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatment. The shape of the SIMS profiles for Zn atoms correlates with the crystal structure of the damaged layer and depends on the presence of the following factors influencing the mobility of Zn atoms: (i) an amorphous/ crystalline (a/c) interface, (ii) end-of-range defects, which are located slightly deeper than the a/c interface; (iii) a surface area enriched by Si vacancies; and (iv) the chemical interaction of Zn with Si atoms, which leads to the formation of Zn-containing phases in the surface layer.
physica status solidi (a), 2007
Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10 16 cm... more Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10 16 cm -2 . After implantation, Si : H samples were annealed at 450 and 650 °C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as-implanted and processed Si : H was determined by X-ray scattering methods. Two types of defect clusters contributing to diffuse scattering were revealed: (i) the defects produced by hydrogen diffusion, characterized by small dimensions, with concentration dependent on annealing temperature; (ii) rather large bubbles and platelets produced due to hydrogen agglomeration at defects with negative dilatation. The samples annealed under high pressure contain large defects with the double force tensor equivalent to the dislocation loops one. It is found that the high pressure heat treatment retards the hydrogen diffusion. Distribution of diffuse scattering around the 004 reciprocal lattice point for each type of defects is simulated and compared with the experimental data.
Acta Crystallographica Section A Foundations of Crystallography, 2005
physica status solidi (RRL) - Rapid Research Letters, 2015
Russian Microelectronics, 2011
ABSTRACT This paper presents the analysis of peculiarities of defect formation in the course of t... more ABSTRACT This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers.
physica status solidi (a), 2011
ABSTRACT The defect structure of the layer damaged by implantation with 64Zn+ ions and its evolut... more ABSTRACT The defect structure of the layer damaged by implantation with 64Zn+ ions and its evolution during subsequent annealing was studied by high-resolution X-ray diffraction combined with secondary ion mass spectrometry and Auger electron spectroscopy methods. The samples were pieces of n-type Si(001) wafer cut from a Czohralski grown ingot. The samples were implanted with 64Zn+ ions at an energy of 100 keV and an ion dose of 2 × 1014 cm−2 with subsequent annealing at 400 °C for 60 min and 700 °C for 10 min. The strain and Debye–Waller depth profiles determined from the diffraction patterns were analyzed and compared to Zn profiles. Annealing leads to significant changes in the shape of the profiles. These changes can be caused by annihilation of Frenkel pair components, redistribution of both radiation-induced point defects and the implanted impurity, and quasi-chemical reactions between point defects and implanted impurity. Analysis of Si(-2-24) reciprocal space maps confirms that the damaged layer remains fully coherent to the Si matrix in as-implanted state and after the heat treatments. The increase of X-ray diffuse scattering intensity after annealing is caused by clustering of radiation-induced point defects and implanted Zn atoms.
According to established ideas, the irradiation by energetic ions induces a significant number of... more According to established ideas, the irradiation by energetic ions induces a significant number of point defects (1). This process is multi-stage and includes generation of radiation induced vacancies and interstitial atoms (Frenkel pairs). The subsequent motion of these defects towards the surface and internal interfaces, as well as their interaction with each other, and with other imperfections of an irradiated sample result in the formation of stable complexes of defects. The real structure of the layer damaged by implantation is determined by these secondary processes. The amorphisation of the damaged layer proceeds by the generation and growth of radiation-induced point defect clusters. The vacancy and interstitial-type clusters are spatially separated: the former are located closer to the surface than the latter. Using a high-resolution X-ray diffraction method on a conventional diffractometer it was found (2) that the growth of vacancy-type clusters leads to amorphization of t...
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by mole... more A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers. © 2000 MAIK "Nauka/Interperiodica".
The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scatter... more The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 mm. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.
Semiconductors, 2006
Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) ... more Structural transformations in InSb crystals exposed to fast neutrons (with energies E > 0.1 MeV) and to full-spectrum reactor neutrons with the ratio between the flux densities of slow and fast neutrons ϕ sn / ϕ fn ≈ 1 are studied. It is shown that, in regard to the effect of fast neutrons on the lattice spacing, two portions can be distinguished in its dependence on the irradiation dose. At small fluences of fast neutrons ( F fn < 2.5 × 10 17 cm -2 ), no increase in the lattice spacing is observed. As follows from the diffuse X-ray scattering data, in this region of fluences, the clusters of vacancies dissociate and the number of small-sized interstitial-type clusters increases. At F fn > 2.5 × 10 17 cm -2 , the lattice spacing increases linearly with increasing fluences of neutrons, and numerous small-sized vacancy clusters and interstitial clusters capable of trapping the Sn dopant atoms are formed. Heat treatment of the exposed samples at temperatures up to 400 ° C results in complete restoration of the lattice spacing.
Physics of the Solid State, 2003
Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treat... more Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450 ° C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.
physica status solidi (a), 2011
ABSTRACT An investigation into the influence of implantation conditions (dose, energy, and target... more ABSTRACT An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He+ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.
physica status solidi (a), 2007
The differences in the secondary processes proceeding in the silicon layer of SOI and reference b... more The differences in the secondary processes proceeding in the silicon layer of SOI and reference bulk silicon wafers are revealed by using High-Resolution X-ray diffraction and Rutherford Backscattering spectroscopy methods. The damage depth profiles in the implanted layers described by both strain and static Debye -Waller factor profiles, were reconstructed from the diffraction patterns using an autofitting procedure, based on a genetic algorithm. The contribution of diffuse scattering was excluded using the triplecrystal diffractometry technique. The defect density profiles were obtained from the RBS/Channelling measurements, which were carried out using 4 He + beam at 2.0 MeV. The DICADA code, based on the theoretical description of dechanneling was used to interpret the RBS/C data. Accumulation kinetics, spatial distribution, and concentration of radiation-induced defects in the topmost silicon layer of SOI and a bulk silicon were shown to be essentially different. The influence of the fields was shown to lead to the loss of crystallinity of the thin surface layer of silicon in SOI due to accumulation of vacancy-type defects and increase of concentration of interstitial atoms near the internal interphase boundary "Si -SiO 2 ".
physica status solidi (a), 2007
ABSTRACT A high resolution X-ray diffraction method has been effectively used for the structural ... more ABSTRACT A high resolution X-ray diffraction method has been effectively used for the structural characterization of InP porous layers. It was revealed that strong diffuse scattering from pores around reciprocal lattice points does depend on the azimuth positions of samples. To extract structural information about porous layers fabricated under different conditions theoretical analysis of the measured reciprocal space maps (RSM) was performed. The statistical dynamical X-ray diffraction theory was used to describe coherent and diffuse scattering from a layer with cylindrical pores. A numerical analysis of the RSMs for two azimuth positions φ (φ = 0 and φ = 90°) and detailed sections of RSMs (linescans) allowed determination of the radius, the length of the pores and tilting angle with respect to the surface normal. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Physica B: Condensed Matter, 2006
The structural transformations in InSb crystals irradiated with fast neutrons (E40:1 MeV ) and th... more The structural transformations in InSb crystals irradiated with fast neutrons (E40:1 MeV ) and the full spectrum of reactor neutrons with the ratio of the slow to fast neutron fluxes j sn /j fn E1 are studied. Two ranges on the dose dependence can be selected according to the influence of fast neutron irradiation on the lattice parameter. Increase of the lattice parameter is not observed at the low flux (F fn o2:5 Â 10 17 cm À2 ). As it follows from the X-ray diffuse scattering analysis, vacancy-type clusters dissociate in this range, and the number of small interstitial-type clusters simultaneously increases in this range. At F fn 42:5 Â 10 17 cm À2 the lattice parameter linearly increases with flux. A great number of small interstitial-and vacancy-type clusters, which can trap Sn impurity atoms, are formed. The heat treatment of irradiated samples up to 400 1C completely recovers the values of the lattice parameter. r
Physica B: Condensed Matter, 2009
ABSTRACT The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffus... more ABSTRACT The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 μm. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.
Physica B: Condensed Matter, 2006
The multiple quantum wells (MQW) Mg 0.27 Zn 0.73 O/ZnO have been grown by pulsed laser deposition... more The multiple quantum wells (MQW) Mg 0.27 Zn 0.73 O/ZnO have been grown by pulsed laser deposition method with different well width L w . The optical and structural characteristics of MQW Mg 0.27 Zn 0.73 O/ZnO have been investigated. The quantum confinement effect showing up in the blue shift of exciton peak in low temperature (8 K) photoluminescence spectra at well width reduction has been studied. It is established that intensity exciton peak I ex and Einstein's characteristic temperature Θ Е increase at reduction of well width L w . It is revealed that the discontinuity ratio of conduction and a valence bands in heterostructure Mg 0.27 Zn 0.73 O/ZnO is 0.65/0.35 that corresponds to the literature.
Journal of Physics D: Applied Physics, 2005
ABSTRACT The effect of in situ photoexcitation on the generation of structure defects in Si cryst... more ABSTRACT The effect of in situ photoexcitation on the generation of structure defects in Si crystals implanted by Ar+ and Ne+ ions was studied using high-resolution x-ray diffraction. Photoexcitation was found to decrease the residual concentration of radiation-induced point defects in the case of low radiation damage (low doses, high energies) leading to annihilation of Frenkel pairs. For heavy damage (high doses, low implantation temperatures, low energies), photoexcitation contributes to amorphization of the damaged layer, which manifests itself as the formation and growth of clusters of radiation-induced point defects. Thus, in situ photoexcitation speeds up secondary processes, and the predominance of one or other process is stipulated by the degree of supersaturation of the solid solution of radiation-induced point defects.
Journal of Crystal Growth, 1998
Buried cobalt disilicide layers have been synthesized in Si by high-dose Co+ implantation and ann... more Buried cobalt disilicide layers have been synthesized in Si by high-dose Co+ implantation and annealing. The implanted doses have been 1017 and 3×1017ions/cm2, and after implantation the samples have been annealed in a one (600°C, 1h) or two step (600°C, 1h+1000°C, 30min) process. The detailed characterization of the samples has been performed by SIMS, XPS, TEM, XRD and Raman scattering
Journal of Applied Crystallography, 2013
A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy an... more A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatment. The shape of the SIMS profiles for Zn atoms correlates with the crystal structure of the damaged layer and depends on the presence of the following factors influencing the mobility of Zn atoms: (i) an amorphous/ crystalline (a/c) interface, (ii) end-of-range defects, which are located slightly deeper than the a/c interface; (iii) a surface area enriched by Si vacancies; and (iv) the chemical interaction of Zn with Si atoms, which leads to the formation of Zn-containing phases in the surface layer.