Lucky Agarwal - Academia.edu (original) (raw)

Papers by Lucky Agarwal

Research paper thumbnail of Fabrication and Characterization of AA7075 Metal Matrix Composite Reinforced With MWCNT

Materials Today: Proceedings, 2018

Many engineering applications requires components with light weight property as well as good mech... more Many engineering applications requires components with light weight property as well as good mechanical properties, this requirement can be served by the Metal Matrix Composites (MMCs) of Aluminum due to its outstanding performance. In the current research work an attempt has been made to fabricate the Aluminum metal matrix composite by liquid route i.e. stir casting. Aluminum Alloy (AA) 7075 is used as a matrix which is reinforced with Multi Walled Carbon Nanotubes (MWCNT) with varying percentage (0wt%, 0.25wt%, 0.5wt%, 0.75wt %). Experiments were carried out to analyze microstructure, micro hardness and the other mechanical properties like tensile strength and Impact strength. Also the samples were studied under Optical microscope and Scanning Electron Microscope (SEM) to investigate the dispersion of MWCNT in AA7075. Microscopic study of 0.25wt%, 0.5wt% & 0.75wt% samples shows a good dispersion of MWCNT into AA7075. Hardness of material increases by 6%, 12% and 25% for 0.25wt%, 0.5wt%, 0.75wt% respectively thus hardness increase with increase of MWCNT percentage. Ultimate tensile strength of material increases with increase in percentage of MWCNT and %Elongation reduces. Impact strength of material increases with increase in percentage of MWCNT.

Research paper thumbnail of Highly Selective Behavior of Thin Film ZnO Based Homojunction Photodetector for UV Sensing

Journal of Nano- and Electronic Physics

ZnO is considered as a prominent semiconductor material in the II-VI metal-oxide group due to its... more ZnO is considered as a prominent semiconductor material in the II-VI metal-oxide group due to its exceptional optical properties that persuade many researchers to use it in the fabrication of photodetectors for ultraviolet (UV) sensing applications. The sensitivity of a photodetector is measured in terms of its responsivity. In this article, the authors have reported a p-n homojunction based on nanostructured ZnO thin film for application as a photodetector in the UV region. The p-type nature of ZnO was obtained by selective doping of ZnO with copper. Hall and hot point probe measurements confirmed that the deposited Cu doped ZnO (CZO) thin film poses p-type conductivity with a resistivity of 0.9 Ωcm, carrier concentration of 1.0287  10 18 cm-3 and mobility of 6.5 cm 2 /Vs at room temperature. The crystalline, morphological studies of ZnO films have been performed by X-ray diffractometer (XRD), atomic force microscopy (AFM), energy dispersive spectrum (EDAX). The current-voltage (I-V) measurements under dark and illuminated conditions have been carried out using Semiconductor Device Analyzer (SDA). The fabricated device shows good rectification property with low reverse leakage current and high rectification ratio. The device has been found to be stable and exhibiting a high value of responsivity (3.2 A/W) at 376 nm for a reverse bias voltage of 3 V. The performance of the new p-n junction ZnO based UV detector is found to outstrip the existing ZnO based Schottky diode photodetectors.

Research paper thumbnail of Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Research paper thumbnail of 二重金属ゲートFinFETデバイスにおけるunderlaped二重Kスペーサの短チャンネル効果(SCE)特性化【Powered by NICT】

IEEE Conference Proceedings, 2016

Research paper thumbnail of Pd/CuドープZnO/Si及びNi/CuドープZnO/Si Schottkyダイオードの製作及び特徴づけ

Research paper thumbnail of Fabrication and characterization of thin-film heterojunction diodes for smart systems

In the present article we report copper (Cu) doped ZnO (p-type) thin-film based heterojunction di... more In the present article we report copper (Cu) doped ZnO (p-type) thin-film based heterojunction diodes grown on p/n-Si substrate. Sol-gel spin coating method has been used to deposit the Cu doped ZnO thin films on p/n-type silicon. The p-type nature of the deposited Cu doped ZnO thin films have been confirmed by hot point probe method. The electrical parameters of the as fabricated devices have been gauged from I-V characteristics. The ZnO based devices on Si platform are expected to be deployed in future generation smart systems for UV/gas sensing and photovoltaic applications.

Research paper thumbnail of Design and Analysis of Ion Selective Field Effect Transistor for Biomedical Application

Lecture notes in electrical engineering, 2023

Research paper thumbnail of Si-Ge based Vertical TFET Junction-Less Structure with improved sensitivity using Dielectric Modulation for Bio-Sensing Applications

Chinese Physics B

In this work, dielectric modulation strategy of gate oxide material that enhances the sensing per... more In this work, dielectric modulation strategy of gate oxide material that enhances the sensing performance of biosensors in junction less vertical tunnel field effect transistor is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the device's proper functioning. TCAD simulation studies of the proposed structure and junction structure have been compared, and it showed an enhanced rectification of 104 times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand side of the fixed gate dielectric which improves the biosensor capture area, hence the sensitivity. By considering the neutral and charged biomolecules with different dielectric, TCAD simulation studies were compared for their sensitivities. IOFF can be used as a suitable sensing parameter because it has been observed that the pro...

Research paper thumbnail of A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design

Research paper thumbnail of Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications

Research paper thumbnail of Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

Silicon

In this review, we explored the modern development of schottky field effect transistor (SK FET) s... more In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. Here, the recent developments compared with the conventional schottky FET sensor, and modified conventional configuration have improved sensitivity and faster responses controlled by dielectric modulation and changing the barrier height. The change in sensitivity-with the current optimization has been considered for dissimilar gate, and drain voltage. The dielectric modulation can advance the finding limits, sensitivity, and reaction time of the novel structures in dissimilar applications, such as U-V finding, gas and chemical/ biosensing. In addition, the efficiency and doped channel have been deliberately studied under dissimilar biomolecule model specifications. This article reviews a recent study on emerging future generation SK FET biosensors with their sensitivity performance and the effect of their metal and channel contact is presented.

Research paper thumbnail of Design of TFET with Ferroelectric Gate Material for Low Power Applications

2021 First International Conference on Advances in Computing and Future Communication Technologies (ICACFCT)

Research paper thumbnail of Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review

Springer Tracts in Electrical and Electronics Engineering, Jun 24, 2022

Research paper thumbnail of Design and Analysis of Junctionless VTFET Device for Sensing Applications

Journal of Nano- and Electronic Physics

Research paper thumbnail of A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

Research paper thumbnail of Study on Recent Trends of Smart Wearable

2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)

In this study, we reviewed on smart wearable to the external environment. Wearable devices are a ... more In this study, we reviewed on smart wearable to the external environment. Wearable devices are a significant topic in both marketable and hypothetical areas. Aggregate request for novelty has managed to better research and innovative yields making gainful chances. The wearable technology is one of the fastest growing technologies in entertainment, health and education. A smart fabric is a part of the cutting-edge scientific field of fashion industry, notwithstanding with the booming improvement of internet industry and smart phone devices. There is a large scope for smart gadgets which are multifunctional, user-friendly with amazing comfort features that is based on advanced electronic fabric systems. This review target to support researchers to enhance perceive recent request trends.

Research paper thumbnail of Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device

2016 International Conference on Control, Computing, Communication and Materials (ICCCCM)

FinFETs are new structures for scaling the devices at sub-nanometer regime to continue the Moore&... more FinFETs are new structures for scaling the devices at sub-nanometer regime to continue the Moore's law. To increase the performance of FinFETs, a dual metal gate with underlap concepts has been introduced. Moreover, its performance can be enhanced by spacers. The dual metal gate comprises of two different workfunction materials (Molybdenum and Tungsten) for double gate (DG) and triple gate (TG) FinFET structures with different underlap length (LUN) has been presented. The TG FinFET exhibits the better control of short channel effects (SCEs) over the DG FinFET device. The significance of the spacer with a variation of spacer length poses the use of dual-k spacer in TG FinFET device to procure the better performance such as high on-current (Ion), Ion/Ioff ratio and smaller subthreshold swing (SS), drain induced barrier lowering (DIBL). The simulation carried by SILVACO ATLAS, and it shows that TG FinFET with different combination of dual-k (smaller high-k length (Lhk), larger low-k length (Llk)) draws an attention for nanoscale application.

Research paper thumbnail of Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

Silicon, 2022

In this review, we discussed highly sensitive biosensor devices which is having a more attractive... more In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications.

Research paper thumbnail of Ytterbium doped ZnO nanolaminated planar waveguide for ring resonator applications

Journal of Physics D: Applied Physics, 2022

In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for dif... more In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for different Yb molar concentrations. The YZO thin films are deposited over the silicon substrate via the sol-gel spin coating method. The range of Yb doping content (concentration) is 0 mol% to 1.5 mol% in ZnO. The morphological variations of the deposited thin film are studied using XRD, FE-SEM, atomic force microscopy, and Ellipsometer. The obtained results indicate that the YZO thin film possesses a single crystalline structure with (1 0 0) as the preferential orientation. All samples have a smooth, dense structure and are free of pinholes. A detailed optical result showed a favorable behavior of YZO thin film for integrated photonic devices. Hence, an optical ring resonator is simulated using MODE and FDTD tool of Lumerical to validate the experimental results. The eigen mode solver is incorporated in MODE (wavelength ranging from 300 to 800 nm) to compute refractive index, propagation co...

Research paper thumbnail of Electron Devices Refractive Index and Dielectric Constant Evaluation of Bi doped p-ZnO Thin Film Deposited by Sol gel Method

In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silic... more In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silicon substrate using sol-gel spin coating method. Bismuth doped ZnO film has been analyzed with hot point probe method which shows that 10 mol % Bi doped films exhibits p-nature. The XRD and AFM result of the films show that films are polycrystalline and almost uniform throughout the substrate. The various optical parameters like dielectric constant, extinction coefficient and refractive index have been calculated over the visible range of wavelength region.

Research paper thumbnail of Fabrication and Characterization of AA7075 Metal Matrix Composite Reinforced With MWCNT

Materials Today: Proceedings, 2018

Many engineering applications requires components with light weight property as well as good mech... more Many engineering applications requires components with light weight property as well as good mechanical properties, this requirement can be served by the Metal Matrix Composites (MMCs) of Aluminum due to its outstanding performance. In the current research work an attempt has been made to fabricate the Aluminum metal matrix composite by liquid route i.e. stir casting. Aluminum Alloy (AA) 7075 is used as a matrix which is reinforced with Multi Walled Carbon Nanotubes (MWCNT) with varying percentage (0wt%, 0.25wt%, 0.5wt%, 0.75wt %). Experiments were carried out to analyze microstructure, micro hardness and the other mechanical properties like tensile strength and Impact strength. Also the samples were studied under Optical microscope and Scanning Electron Microscope (SEM) to investigate the dispersion of MWCNT in AA7075. Microscopic study of 0.25wt%, 0.5wt% & 0.75wt% samples shows a good dispersion of MWCNT into AA7075. Hardness of material increases by 6%, 12% and 25% for 0.25wt%, 0.5wt%, 0.75wt% respectively thus hardness increase with increase of MWCNT percentage. Ultimate tensile strength of material increases with increase in percentage of MWCNT and %Elongation reduces. Impact strength of material increases with increase in percentage of MWCNT.

Research paper thumbnail of Highly Selective Behavior of Thin Film ZnO Based Homojunction Photodetector for UV Sensing

Journal of Nano- and Electronic Physics

ZnO is considered as a prominent semiconductor material in the II-VI metal-oxide group due to its... more ZnO is considered as a prominent semiconductor material in the II-VI metal-oxide group due to its exceptional optical properties that persuade many researchers to use it in the fabrication of photodetectors for ultraviolet (UV) sensing applications. The sensitivity of a photodetector is measured in terms of its responsivity. In this article, the authors have reported a p-n homojunction based on nanostructured ZnO thin film for application as a photodetector in the UV region. The p-type nature of ZnO was obtained by selective doping of ZnO with copper. Hall and hot point probe measurements confirmed that the deposited Cu doped ZnO (CZO) thin film poses p-type conductivity with a resistivity of 0.9 Ωcm, carrier concentration of 1.0287  10 18 cm-3 and mobility of 6.5 cm 2 /Vs at room temperature. The crystalline, morphological studies of ZnO films have been performed by X-ray diffractometer (XRD), atomic force microscopy (AFM), energy dispersive spectrum (EDAX). The current-voltage (I-V) measurements under dark and illuminated conditions have been carried out using Semiconductor Device Analyzer (SDA). The fabricated device shows good rectification property with low reverse leakage current and high rectification ratio. The device has been found to be stable and exhibiting a high value of responsivity (3.2 A/W) at 376 nm for a reverse bias voltage of 3 V. The performance of the new p-n junction ZnO based UV detector is found to outstrip the existing ZnO based Schottky diode photodetectors.

Research paper thumbnail of Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

Research paper thumbnail of 二重金属ゲートFinFETデバイスにおけるunderlaped二重Kスペーサの短チャンネル効果(SCE)特性化【Powered by NICT】

IEEE Conference Proceedings, 2016

Research paper thumbnail of Pd/CuドープZnO/Si及びNi/CuドープZnO/Si Schottkyダイオードの製作及び特徴づけ

Research paper thumbnail of Fabrication and characterization of thin-film heterojunction diodes for smart systems

In the present article we report copper (Cu) doped ZnO (p-type) thin-film based heterojunction di... more In the present article we report copper (Cu) doped ZnO (p-type) thin-film based heterojunction diodes grown on p/n-Si substrate. Sol-gel spin coating method has been used to deposit the Cu doped ZnO thin films on p/n-type silicon. The p-type nature of the deposited Cu doped ZnO thin films have been confirmed by hot point probe method. The electrical parameters of the as fabricated devices have been gauged from I-V characteristics. The ZnO based devices on Si platform are expected to be deployed in future generation smart systems for UV/gas sensing and photovoltaic applications.

Research paper thumbnail of Design and Analysis of Ion Selective Field Effect Transistor for Biomedical Application

Lecture notes in electrical engineering, 2023

Research paper thumbnail of Si-Ge based Vertical TFET Junction-Less Structure with improved sensitivity using Dielectric Modulation for Bio-Sensing Applications

Chinese Physics B

In this work, dielectric modulation strategy of gate oxide material that enhances the sensing per... more In this work, dielectric modulation strategy of gate oxide material that enhances the sensing performance of biosensors in junction less vertical tunnel field effect transistor is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the device's proper functioning. TCAD simulation studies of the proposed structure and junction structure have been compared, and it showed an enhanced rectification of 104 times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand side of the fixed gate dielectric which improves the biosensor capture area, hence the sensitivity. By considering the neutral and charged biomolecules with different dielectric, TCAD simulation studies were compared for their sensitivities. IOFF can be used as a suitable sensing parameter because it has been observed that the pro...

Research paper thumbnail of A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design

Research paper thumbnail of Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications

Research paper thumbnail of Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

Silicon

In this review, we explored the modern development of schottky field effect transistor (SK FET) s... more In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. Here, the recent developments compared with the conventional schottky FET sensor, and modified conventional configuration have improved sensitivity and faster responses controlled by dielectric modulation and changing the barrier height. The change in sensitivity-with the current optimization has been considered for dissimilar gate, and drain voltage. The dielectric modulation can advance the finding limits, sensitivity, and reaction time of the novel structures in dissimilar applications, such as U-V finding, gas and chemical/ biosensing. In addition, the efficiency and doped channel have been deliberately studied under dissimilar biomolecule model specifications. This article reviews a recent study on emerging future generation SK FET biosensors with their sensitivity performance and the effect of their metal and channel contact is presented.

Research paper thumbnail of Design of TFET with Ferroelectric Gate Material for Low Power Applications

2021 First International Conference on Advances in Computing and Future Communication Technologies (ICACFCT)

Research paper thumbnail of Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review

Springer Tracts in Electrical and Electronics Engineering, Jun 24, 2022

Research paper thumbnail of Design and Analysis of Junctionless VTFET Device for Sensing Applications

Journal of Nano- and Electronic Physics

Research paper thumbnail of A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

Research paper thumbnail of Study on Recent Trends of Smart Wearable

2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)

In this study, we reviewed on smart wearable to the external environment. Wearable devices are a ... more In this study, we reviewed on smart wearable to the external environment. Wearable devices are a significant topic in both marketable and hypothetical areas. Aggregate request for novelty has managed to better research and innovative yields making gainful chances. The wearable technology is one of the fastest growing technologies in entertainment, health and education. A smart fabric is a part of the cutting-edge scientific field of fashion industry, notwithstanding with the booming improvement of internet industry and smart phone devices. There is a large scope for smart gadgets which are multifunctional, user-friendly with amazing comfort features that is based on advanced electronic fabric systems. This review target to support researchers to enhance perceive recent request trends.

Research paper thumbnail of Short channel effects (SCEs) characterization of underlaped dual-K spacer in dual-metal gate FinFET device

2016 International Conference on Control, Computing, Communication and Materials (ICCCCM)

FinFETs are new structures for scaling the devices at sub-nanometer regime to continue the Moore&... more FinFETs are new structures for scaling the devices at sub-nanometer regime to continue the Moore's law. To increase the performance of FinFETs, a dual metal gate with underlap concepts has been introduced. Moreover, its performance can be enhanced by spacers. The dual metal gate comprises of two different workfunction materials (Molybdenum and Tungsten) for double gate (DG) and triple gate (TG) FinFET structures with different underlap length (LUN) has been presented. The TG FinFET exhibits the better control of short channel effects (SCEs) over the DG FinFET device. The significance of the spacer with a variation of spacer length poses the use of dual-k spacer in TG FinFET device to procure the better performance such as high on-current (Ion), Ion/Ioff ratio and smaller subthreshold swing (SS), drain induced barrier lowering (DIBL). The simulation carried by SILVACO ATLAS, and it shows that TG FinFET with different combination of dual-k (smaller high-k length (Lhk), larger low-k length (Llk)) draws an attention for nanoscale application.

Research paper thumbnail of Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

Silicon, 2022

In this review, we discussed highly sensitive biosensor devices which is having a more attractive... more In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications.

Research paper thumbnail of Ytterbium doped ZnO nanolaminated planar waveguide for ring resonator applications

Journal of Physics D: Applied Physics, 2022

In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for dif... more In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for different Yb molar concentrations. The YZO thin films are deposited over the silicon substrate via the sol-gel spin coating method. The range of Yb doping content (concentration) is 0 mol% to 1.5 mol% in ZnO. The morphological variations of the deposited thin film are studied using XRD, FE-SEM, atomic force microscopy, and Ellipsometer. The obtained results indicate that the YZO thin film possesses a single crystalline structure with (1 0 0) as the preferential orientation. All samples have a smooth, dense structure and are free of pinholes. A detailed optical result showed a favorable behavior of YZO thin film for integrated photonic devices. Hence, an optical ring resonator is simulated using MODE and FDTD tool of Lumerical to validate the experimental results. The eigen mode solver is incorporated in MODE (wavelength ranging from 300 to 800 nm) to compute refractive index, propagation co...

Research paper thumbnail of Electron Devices Refractive Index and Dielectric Constant Evaluation of Bi doped p-ZnO Thin Film Deposited by Sol gel Method

In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silic... more In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silicon substrate using sol-gel spin coating method. Bismuth doped ZnO film has been analyzed with hot point probe method which shows that 10 mol % Bi doped films exhibits p-nature. The XRD and AFM result of the films show that films are polycrystalline and almost uniform throughout the substrate. The various optical parameters like dielectric constant, extinction coefficient and refractive index have been calculated over the visible range of wavelength region.