Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications (original) (raw)
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IEEE Transactions on Electron Devices, 2015
In this paper, a short-gate tunneling-field-effecttransistor (SG-TFET) structure has been investigated for the dielectrically modulated biosensing applications in comparison with a full-gate tunneling-field-effect-transistor structure of similar dimensions. This paper explores the underlying physics of these architectures and estimates their comparative sensing performance. The sensing performance has been evaluated for both the charged and charge-neutral biomolecules using extensive device-level simulation, and the effects of the biomolecule dielectric constant and charge density are also studied. In SG-TFET architecture, the reduction of the gate length enhances its drain control over the band-to-band tunneling process and this has been exploited for the detection, resulting to superior drain current sensitivity for biomolecule conjugation. The gate and drain biasing conditions show dominant impact on the sensitivity enhancement in the short-gate biosensors. Therefore, the gate and drain bias are identified as the effective design parameters for the efficiency optimization. Index Terms-Band-to-band tunneling (BTBT), biosensors, dielectric modulated tunneling-field-effect transistor (DMTFET), tunnel field-effect transistor (FET).
Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors
Silicon
In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. Here, the recent developments compared with the conventional schottky FET sensor, and modified conventional configuration have improved sensitivity and faster responses controlled by dielectric modulation and changing the barrier height. The change in sensitivity-with the current optimization has been considered for dissimilar gate, and drain voltage. The dielectric modulation can advance the finding limits, sensitivity, and reaction time of the novel structures in dissimilar applications, such as U-V finding, gas and chemical/ biosensing. In addition, the efficiency and doped channel have been deliberately studied under dissimilar biomolecule model specifications. This article reviews a recent study on emerging future generation SK FET biosensors with their sensitivity performance and the effect of their metal and channel contact is presented.
Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor
IEEE Electron Device Letters, 2012
In this letter, we propose a dielectric modulated double-gate tunnel field-effect transistor (DG-TFET)-based sensor for low power consumption label-free biomolecule detection applications. A nanogap-embedded FET-based biosensor has already been demonstrated experimentally, but a TFET-based biosensor has not been demonstrated earlier. Thus, a concept of TFET-based sensor is presented by analytical and simulation-based study. The results indicate better sensitivity toward two different effects (dielectric constant and charge of biomolecule) in comparison with a FET-based biosensor, and the additional advantages of CMOS compatibility, low leakage (low static power dissipation), and steep subthreshold slope make TFET an attractive alternative architecture for CMOS-based sensor applications.
IEEE Transactions on Electron Devices, 2012
In this paper, an analytical model for a p-n-p-n tunnel field-effect transistor (TFET) working as a biosensor for label-free biomolecule detection purposes is developed and verified with device simulation results. The model provides a generalized solution for the device electrostatics and electrical characteristics of the p-n-p-n-TFET-based sensor and also incorporates the two important properties possessed by a biomolecule, i.e., its dielectric constant and charge. Furthermore, the sensitivity of the TFET-based biosensor has been compared with that of a conventional FET-based counterpart in terms of threshold voltage (V th) shift, variation in the ON-current (I on) level, and I on /I off ratio. It has been shown that the TFET-based sensor shows a large deviation in the current level, and thus, change in I on can also be considered as a suitable sensing parameter. Moreover, the impacts of device parameters (channel thickness and cavity length), process variability, and process-induced damage on the sensitivity of the biosensor have also been discussed.
Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor
Silicon, 2020
This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within the gate dielectric near the source end for sensing biomolecules. Therefore, the modulation of the SB width at the source end occurs due to presence of biomolecules in the form of different dielectric material used to fill the nanogap cavity. Hence, the current flow from source to drain is highly sensitive to the change in properties of dielectric materials. Here, we have investigated the performance of the proposed device in terms of its sensing capability by variation in dielectric constant and, charge density. Also, the performance of the device is observed for different cavity length and, thickness for different drain and source bias. Results show high sensitivity in terms of change in drive current of the device for the variation in the dielectric constant and charge density. Simulations have been performed by the two dimensional SILVACO ATLAS device simulator.
Design and Development of Biosensors Based on Nano Tube Tunnel Field Effect Transistor
International Journal of Advances in Scientific Research and Engineering, 2023
Tunnel Field Effect Transistor (TFET) is gaining recognition and provide solution for Integrated Circuit (IC) design with low power. This is due to TFET's carrier transportation scheme, which utilizes inter-band tunneling of carriers, and its fabrication similarity to MOSFET. TFET presents itself as a widely adopted device structure that can overcome the limitations of MOSFETs. However, TFETs suffer from poor DC and Radio Frequency (RF) performance, mainly due to minority carrier transport and physical doping, which forms an abrupt junction in nanoscale devices due to RDFs. The junction-less device structure presents a viable solution to these issues without sacrificing DC parameters, even at high-frequency. Furthermore, the nanotube structure of TFET effectively reduces the Subthreshold Swing (SS) and leakage current due to better controllability of channel. The gate-all-around structure of nanotube TFET improves the surface potential distribution over the channel region, not only enhancing the DC characteristics of TFET but also improving the high-frequency parameters. The core gate Nano Tube (NT)-TFET is a promising device structure for exploring its application in the field of biomedical science as a biosensor. The proposed core gate nanotube structure provides a larger surface area for immobilizing biomolecules in the cavity, thus improving sensitivity analysis. This work proposes the utility of a novel core gate NT-TFET as a biosensor for detecting label-free biomolecules and DNAs. In this design, the detection capability of biosensor is improved, and the detection processes are investigated by high-frequency parameters of the proposed twin cavity dual metal NT-TFET biosensor. This study demonstrates the sensitivity analysis of biosensor based on transit time and device efficiency, which are two critical high-frequency parameters. This approach results in a biosensor with a lower annealing budget, making it more cost-effective and with comparatively higher sensitivity.
Performance Analysis of Double Gate Dielectric Modulation In Schottky FET As Biomolecule Sensor
2021
In this article, a charge-plasma (CP)-based double gate schottky barrier FET structure has been investigated using dielectric controlled biomolecule sensor. The use of Hafnium as a charge plasma at the source side encourages an n+ charge plasma in an un-doped silicon region, which expressively decreases the Schottky barrier thickness. The oxide below the Metal gate M1 and M2 is etched out to create nanogap openings for biomolecule finding. Here, the existence of molecules is categorized by the modification in oxide material inside the nanogap and the related charge densities, hence, to controls the tunneling thickness at the Metal-source-silicon channel interface, also with the help of plasma charges in an intrinsic-Si film. This paper is mainly focused on the fundamental physics of the proposed structure and approximations of their relative sensitivity detecting enactment. The sensing enactment has been assessed for charged biomolecules and charge-neutral biomolecules by widespread...
Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis
Silicon, 2022
A highly sensitive, accurate, fast and power efficient biosensor is the need of the hour. Undoubtedly, dielectrically modulated (DM) tunnel FET (TFET) assures better sensitivity as compared to MOSFET biosensors in case of label-free biosensing. However, there exists immense possibilities to upgrade TFET biosensor properties through the improvement of its DC characteristics. Therefore, in this paper a ferroelectric (FE) gate oxide and a hetero material (HM) source/drain-channel based TFET is designed for biosensor applications. A FE layer of HfZrO 2 above SiO 2 gives rise to negative capacitance (NC) effect that causes voltage amplification and hence, boosts subthreshold swing (SS) and I ON /I OFF ratio. In addition, use of a low band gap material (Ge) in source and a high band gap material (GaAs) in drain-channel junctions enhances the probability of band-to-band-tunneling (BTBT) of charge carriers. Further, to introduce biomolecules, a cavity is impinged below HfZrO 2 near SiO 2 above source/channel junction that modulates BTBT as a function of charge density (N f) and dielectric constant (K). This paper presents a detailed comparative analysis of Ge/GaAs-NCTFET and Ge/GaAs-TFET biosensors for different K and N f values from which we can conclude that the incorporation of NC effect in TFET biosensors leads to enhanced sensitivity with high speed and low power consumption.
Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications
Silicon, 2020
Nanowire based devices are most important candidate for future generation application. The unique advantage of Nanowire as a channel material is one dimensional conduction, low subthreshold leakage current as well high electron mobility. Moreover Nanowire posses unique prosperities such as chemical, optical, electrical and mechanical making them suitable for sensor design. Nanowire Tunnel Field Effect Transistor (NW-TFET) has potential bio-sensor applications as ultra-low power highly sensitive sensors alternative to conventional sensors. NW-TFET can offer sharp inverse subthreshold slope (SS) leads to low leakage current. The important working mechanism is band-to-band tunnelling (BTBT) in TFET and their structures are based on gateall-around (GAA). This paper presents, recent advancements made on process, purpose and properties of NW-TFET and comparison on various NW-TFET structures and their characteristics. Various categories include in this paper are GAA, Junctionless, hetrojunction, charge plasma, doppingless, or in combination with multigate work functions are discussed. The comparative study revealed that HT-JL-DG-NW-TFET outperforms and highly sensitive bio-sensor application and better device performance over other NW-TFET.
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
IEEE Transactions on Electron Devices, 2017
A vertical dielectrically modulated tunnel field-effect transistor (V-DMTFET) as a label-free biosensor has been investigated in this paper for the first time and compared with lateral DMTFET (L-DMTFET) using underlap concept and gate work function engineering. To improve the performance of lateral biosensor (LB), a heavily doped front gate n +-pocket and gate-to-source overlap is introduced in the vertical biosensor (VB). The integrated effect of lateral tunneling as well as vertical tunneling in VB leads to enhanced ON-state current and decrease the subthreshold swing. To evaluate sensing ability of these devices, charged and charged neutral biomolecules are immobilized in nanogap cavity independently. A deep analysis has been performed to show the effect of variation in dielectric constant (k), charge density (ρ), x-composition of Ge, % volume filling of t cavity , length and thickness of a n +-pocket and sensitivity of electrical parameters is also incorporated. Dual-pocket (front and back gate pocket) VB is studied and compared with the LB and VB in the tabular form. Noise characteristic of dielectrically modulated field-effect transistor, L-DMTFET, and V-DMTFET is also evaluated. Index Terms-Band-to-band tunneling (BTBT), dielectrically modulated tunnel field-effect transistor (DMTFET), lateral biosensor (LB), n +-pocket, overlap gate, vertical biosensor (VB). I. INTRODUCTION T HE field-effect transistor (FET)-based biosensors are very popular for label-free detection process and also compatible for the CMOS technology [1]-[4]. FET-based biosensors have some critical challenges such as high subthreshold swing (SS > 60 mV/decade) due to kT/q limit and large response time. This can be eradicated by tunnel FET (TFET)based biosensor as TFET possesses SS <60 mV/decade due to its band-to-band-tunneling (BTBT) mechanism [5]-[7]. Along with this, response time (time required to detect the target biomolecules in the cavity) for TFET-based biosensor is lower because of its lower SS [6]. On this basis, TFET-based Manuscript