Luis Figueroa - Academia.edu (original) (raw)

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Papers by Luis Figueroa

Research paper thumbnail of Generation and quenching of intensity pulsations in semiconductor lasers coupled to external cavities

IEEE Journal of Quantum Electronics, 1980

The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated e... more The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated experimentally and theoretically. We investigate the dependence of the pulsation characteristics on the external cavity length using a saturable absorber model for self-pulsiig lasers. It was found that quenching of self-pulsation occurs only for a certain limited range of external cavity length, and the frequencies of external-cavity induced pulsations lies within a certain range determined by the coupling coefficient. Small-signal analysis allows these ranges to be derived analytically. Hitherto, complex pulsation phenomena c m be explained very intuitively by interpreting the combined laserexternal cavity system as a microwave oscillator with a limited gain band and discrete mode structure.

Research paper thumbnail of A high-speed p-In(0.53)Ga(0.47)As/p(+)-InP Schottky barrier photodiode for infrared photodetection

A new high-speed long-wavelength p-InGaAs/p(+)-InP Schottky-barrier photodiode for use in the 1.3... more A new high-speed long-wavelength p-InGaAs/p(+)-InP Schottky-barrier photodiode for use in the 1.30-1.65-micron regime is presented. This photodiode has been fabricated on a p-In(0.53)Ga(0.47)As epilayer using a mesa Schottky-barrier structure LPE-grown on a p(+)-InP substrate. The photodiode has a responsivity of 0.43 A/W at 1.3 microns and a rise time of 85 psec. The measured RC time constant for the photodiode with a 50-ohm load resistance is found to be 34.7 psec.

Research paper thumbnail of Opto-electronics Technology For Avionic And Space Applications

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels

Research paper thumbnail of Optical-microwave interactions in semiconductor devices. Quarterly report no. 3, 1 Jan-31 Mar 1979

The results of an extensive experimental study of mode locking in semiconductor lasers with diffe... more The results of an extensive experimental study of mode locking in semiconductor lasers with different external-cavity configurations are described. The generation of GaAs laser pulses less than 200 psec wide at approximately-GHz repetition rates was achieved by operating the laser in a 5-cm-long external cavity. The presence of a strong resonance at low frequencies in the laser actually aided the generation of short pulses. A novel external-cavity configuration using a piece of optical fiber is also described. Modulation frequencies as high as 4.26 GHz were obtained for lasers biased only slightly above threshold, and optical pulses as narrow as 200 psec were generated using this technique. A theoretical study of the response of GaAs FETs under optical illumination was presented. For a strong photo-transistor effect to occur in an FET requires that the region of active channel under the gate electrode be illuminated. A modified FET design suitable for this purpose is proposed and analyzed.

Research paper thumbnail of Laser Diode Technology and Applications

Research paper thumbnail of Leaky-guided channeled substrate planar (LCSP)

Research paper thumbnail of Strained quantum well laser for high temperature operation

Research paper thumbnail of High power laser diodes and applications; Proceedings of the Meeting, Los Angeles, CA, Jan. 14, 15, 1988

Proceedings of Spie the International Society For Optical Engineering, Dec 30, 1987

Research paper thumbnail of Studies of (GaAI)As injection lasers operating with an optical fiber resonator

Research paper thumbnail of High Speed Photoconductive Detector

Research paper thumbnail of Multiwavelength LED and laser diode optical source

Research paper thumbnail of Laser-diode technology and applications II; Proceedings of the Meeting, Los Angeles, CA, Jan. 16-19, 1990

Proceedings of Spie the International Society For Optical Engineering, 1990

Abstract Various papers on laser-diode technology and applications are presented. The general top... more Abstract Various papers on laser-diode technology and applications are presented. The general topics addressed include: miniature visible lasers; quantum well semiconductor laser devices; high power semiconductor optical sources: single-element devices; high-...

Research paper thumbnail of Gallium arsenide burrus FET structure for optical detection

Research paper thumbnail of Variations of linewith enhancement factor and linewidth as a function of laser geometry in (AlGa)As lasers

Ieee Journal of Quantum Electronics, 1989

Research paper thumbnail of Heterostructure interdigital high speed photoconductive detector

Research paper thumbnail of GHz bandwidth /GaAl/As semiconductor lasers and optical detectors for signal processing applications

Integrated Optics and Millimeter and Microwave Integrated Circuits, Aug 1, 1982

Research paper thumbnail of Integrated waveguide and FET detector

Research paper thumbnail of Optically pumped GaAs-Ga/sub x/Al/sub x/As half-ring laser fabricated by liquid-phase epitaxy over chemically etched channels

Research paper thumbnail of GaAs double-heterostructure injection lasers with lateral optical and current confinement

Research paper thumbnail of Specialty Fiber Optic Systems for Mobile Platforms and Plastic Optical Fibers

Specialty Fiber Optic Systems For Mobile Platforms and Plastic Optical Fibers, Feb 1, 1993

Research paper thumbnail of Generation and quenching of intensity pulsations in semiconductor lasers coupled to external cavities

IEEE Journal of Quantum Electronics, 1980

The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated e... more The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated experimentally and theoretically. We investigate the dependence of the pulsation characteristics on the external cavity length using a saturable absorber model for self-pulsiig lasers. It was found that quenching of self-pulsation occurs only for a certain limited range of external cavity length, and the frequencies of external-cavity induced pulsations lies within a certain range determined by the coupling coefficient. Small-signal analysis allows these ranges to be derived analytically. Hitherto, complex pulsation phenomena c m be explained very intuitively by interpreting the combined laserexternal cavity system as a microwave oscillator with a limited gain band and discrete mode structure.

Research paper thumbnail of A high-speed p-In(0.53)Ga(0.47)As/p(+)-InP Schottky barrier photodiode for infrared photodetection

A new high-speed long-wavelength p-InGaAs/p(+)-InP Schottky-barrier photodiode for use in the 1.3... more A new high-speed long-wavelength p-InGaAs/p(+)-InP Schottky-barrier photodiode for use in the 1.30-1.65-micron regime is presented. This photodiode has been fabricated on a p-In(0.53)Ga(0.47)As epilayer using a mesa Schottky-barrier structure LPE-grown on a p(+)-InP substrate. The photodiode has a responsivity of 0.43 A/W at 1.3 microns and a rise time of 85 psec. The measured RC time constant for the photodiode with a 50-ohm load resistance is found to be 34.7 psec.

Research paper thumbnail of Opto-electronics Technology For Avionic And Space Applications

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels

Research paper thumbnail of Optical-microwave interactions in semiconductor devices. Quarterly report no. 3, 1 Jan-31 Mar 1979

The results of an extensive experimental study of mode locking in semiconductor lasers with diffe... more The results of an extensive experimental study of mode locking in semiconductor lasers with different external-cavity configurations are described. The generation of GaAs laser pulses less than 200 psec wide at approximately-GHz repetition rates was achieved by operating the laser in a 5-cm-long external cavity. The presence of a strong resonance at low frequencies in the laser actually aided the generation of short pulses. A novel external-cavity configuration using a piece of optical fiber is also described. Modulation frequencies as high as 4.26 GHz were obtained for lasers biased only slightly above threshold, and optical pulses as narrow as 200 psec were generated using this technique. A theoretical study of the response of GaAs FETs under optical illumination was presented. For a strong photo-transistor effect to occur in an FET requires that the region of active channel under the gate electrode be illuminated. A modified FET design suitable for this purpose is proposed and analyzed.

Research paper thumbnail of Laser Diode Technology and Applications

Research paper thumbnail of Leaky-guided channeled substrate planar (LCSP)

Research paper thumbnail of Strained quantum well laser for high temperature operation

Research paper thumbnail of High power laser diodes and applications; Proceedings of the Meeting, Los Angeles, CA, Jan. 14, 15, 1988

Proceedings of Spie the International Society For Optical Engineering, Dec 30, 1987

Research paper thumbnail of Studies of (GaAI)As injection lasers operating with an optical fiber resonator

Research paper thumbnail of High Speed Photoconductive Detector

Research paper thumbnail of Multiwavelength LED and laser diode optical source

Research paper thumbnail of Laser-diode technology and applications II; Proceedings of the Meeting, Los Angeles, CA, Jan. 16-19, 1990

Proceedings of Spie the International Society For Optical Engineering, 1990

Abstract Various papers on laser-diode technology and applications are presented. The general top... more Abstract Various papers on laser-diode technology and applications are presented. The general topics addressed include: miniature visible lasers; quantum well semiconductor laser devices; high power semiconductor optical sources: single-element devices; high-...

Research paper thumbnail of Gallium arsenide burrus FET structure for optical detection

Research paper thumbnail of Variations of linewith enhancement factor and linewidth as a function of laser geometry in (AlGa)As lasers

Ieee Journal of Quantum Electronics, 1989

Research paper thumbnail of Heterostructure interdigital high speed photoconductive detector

Research paper thumbnail of GHz bandwidth /GaAl/As semiconductor lasers and optical detectors for signal processing applications

Integrated Optics and Millimeter and Microwave Integrated Circuits, Aug 1, 1982

Research paper thumbnail of Integrated waveguide and FET detector

Research paper thumbnail of Optically pumped GaAs-Ga/sub x/Al/sub x/As half-ring laser fabricated by liquid-phase epitaxy over chemically etched channels

Research paper thumbnail of GaAs double-heterostructure injection lasers with lateral optical and current confinement

Research paper thumbnail of Specialty Fiber Optic Systems for Mobile Platforms and Plastic Optical Fibers

Specialty Fiber Optic Systems For Mobile Platforms and Plastic Optical Fibers, Feb 1, 1993

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