Milko Peikert - Academia.edu (original) (raw)

Papers by Milko Peikert

Proceedings of SPIE, Jun 16, 2005

... Karin Eggersa, Karsten Gutjahra, Milko Peikerta, Dieter Rutzingera, Ralf Ludwigb, Michael Kai... more ... Karin Eggersa, Karsten Gutjahra, Milko Peikerta, Dieter Rutzingera, Ralf Ludwigb, Michael Kaiserb, Jan Heumannb a Infineon Technologies AG, Königsbrücker Str. ... Defect types: A: dark ex-tension (DEX), B: dark center (DCE), C: clear exten-sion (CEX), D: clear center (CCE), G ...

Proceedings of SPIE, Mar 13, 2009

Reticle defectivity was evaluated using two known approaches: direct reticle inspection and the i... more Reticle defectivity was evaluated using two known approaches: direct reticle inspection and the inspection of the wafer prints. The primary test vehicle was a reticle with a design consisting of 45 nm and 60 nm comb and serpentine structures in different orientations. The reticle was inspected in reflected light on the KLA 587 in a die-todie and a die-to-database mode. Wafers were exposed on a 0.25 NA full-field EUV exposure tool and inspected on a KLA 2800. Both methods delivered two populations of defects which were correlated to identify coinciding detections and mismatches. In addition, reticle defects were reviewed using scanning electron microscopy (SEM) to assess the printability. Furthermore, some images of the defects found on the 45 nm reticle used in the previous study [1] were collected using actinic (EUV) microscopy. The results of the observed mask defects are presented and discussed together with a defect classification.

Vacuum

ABSTRACT The efficiency as a diffusion barrier of RF-magnetron sputtered Ta-layers modified by io... more ABSTRACT The efficiency as a diffusion barrier of RF-magnetron sputtered Ta-layers modified by ion implantation has been studied using Auger electron spectroscopy and X-ray diffraction. Two systems were prepared: 50 nm Ta/500 nm Cu/50 nm Ta on SiO2 and 200 nm Cu/50 nm Ta on SiO2. The samples were annealed at temperatures from 600°C to 850°C in a vacuum of 2×10−4 Pa. The thermal stability was determined by interdiffusion of Cu into the diffusion barrier. The as-deposited Ta barriers are polycrystalline. After annealing at 600°C for 1 h interdifusion of Cu is observed for the non-implanted barrier. Ion implantation of nitrogen into the Ta layer leads to a nanocrystalline or amorphous-like structure with an important improvement of the barrier effect. The nitrogen-implanted 50 nm Ta barrier on Cu is stable up to 750°C for 1 h. Ta layers between the Cu and SiO2 exhibit even higher thermal stability. The Cu/Ta/SiO2 system shows beginning of copper diffusion and a strong interdiffusion between Ta and SiO2 after annealing at 800°C without implantation. The implanted Ta-barriers in this system are still effective after annealing at 850°C for 3 h.

Alternative Lithographic Technologies, 2009

21st European Mask and Lithography Conference, 2005

Photomask Technology 2006, 2006

Mask inspection and qualification is a must for wafer fabs to ensure and guarantee high and stabl... more Mask inspection and qualification is a must for wafer fabs to ensure and guarantee high and stable yields. Single defect events can easily cause a million dollar loss through a defect duplicating onto the wafer. Several techniques and methods for mask qualification within a wafer fab are known but not all of them are neither used nor understood regarding their

Surface and Coatings Technology, 2005

ABSTRACT The incorporation of nitrogen into thin (10 nm) Ta layers using plasma immersion ion imp... more ABSTRACT The incorporation of nitrogen into thin (10 nm) Ta layers using plasma immersion ion implantation (PIII) has been studied. PIII was carried out using a low-pressure (0.3 Pa) plasma and ion energies between 6 and 25 keV. The depth distributions of nitrogen were measured by Auger electron spectroscopy (AES) and compared with those obtained by numerical simulations (Profile Code). The experimental profiles do not show a maximum at the projected range of the implanted ions, but a high nitrogen concentration at the surface decreasing with depth. The influence of implantation parameters such as high-voltage pulse rise and fall times, voltage amplitude, and plasma pulsing on the shape of the nitrogen profile is investigated and discussed. Especially reduced fall time of the high-voltage pulse reduces the implantation with energies below the nominal value and therefore the high nitrogen concentration near the surface significantly.

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014), 2014

ABSTRACT The purpose of this paper is to elucidate other applications where the low frequency com... more ABSTRACT The purpose of this paper is to elucidate other applications where the low frequency component of background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different processes. During initial epitaxial development cycles a fast method of qualifying the growth runs is required. While SEM inspections can sub-sample the wafer, a semi-quantitative way of qualifying growth can be immensely helpful in speeding up the process. In this paper we monitor the epitaxial growth of III/V materials by two different methods: 1) strain relaxed buffers (SRB approach); and, 2) selective epitaxial growth (SEG approach) by using the haze.

Applied Surface Science, 2005

Reliably acting diffusion barrier films are basically for the functionality of the copper interco... more Reliably acting diffusion barrier films are basically for the functionality of the copper interconnect technology. Tantalum (Ta) and Tantalum nitride (TaN) are established materials for diffusion barriers against copper diffusion. In this study, the characterization of TaN like films produced using N + plasma immersion ion implantation (PIII) was performed using Auger electron spectroscopy (AES). Chemical information was extracted from the Auger data using linear least square fit (LLS). The capability of the method in order to detect very little changes in the film composition dependent on small process changes was demonstrated. The nitrogen incorporation by PIII into high aspect ratio contact holes was proven using analytical TEM.

Proc. …, 2005

Thin Solid Films, 2004

The effect of ion beam mixing on the formation of tantalum-silicon contacts was studied. Silicon ... more The effect of ion beam mixing on the formation of tantalum-silicon contacts was studied. Silicon implantation into 50 nm Ta layers on n-Si (1 0 0) was carried out at temperatures from 150 to 500 8C and fluences between 1=10 and 1=10 Siycm. q 15 17 2 16 2 2 interface was observed in this case.

Thin Solid Films, 2002

Magnetron sputtered polycrystalline Ta and Ta(Si) barriers for copper metallization schemes were ... more Magnetron sputtered polycrystalline Ta and Ta(Si) barriers for copper metallization schemes were modified by nitrogen as well as oxygen high dose ion implantation to improve their thermo-mechanical stability. Ion bombardment changed the initial polycrystalline microstructure to amorphous-like. In contrast to pure Ta, Ta(Si) layers were already amorphous or nanocrystalline after deposition. In this case, the annealing temperature at which formation