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Papers by Monique Teisseire

Research paper thumbnail of Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

Semiconductor Science and Technology, 2015

Research paper thumbnail of Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Journal of Crystal Growth, 2014

We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane p... more We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition. Using a three-step growth method, planar (11-22) GaN epilayers on 2 in. wafers with significant optical and structural quality improvements have been obtained. The filtering of basal stacking faults and dislocations was achieved by overlapping adjacent crystals and forming voids between them. These voids act as a barrier to defect propagation which results in reduced defect density at the surface of the epilayer. Cathodoluminescence measurements at 80 K revealed a dislocation density of 5.1 Â 10 7 cm À 2 and a basal stacking fault density below 30 cm À 1 . Moreover, photoluminescence and X-ray diffraction measurements attested a material quality similar to conventional GaN on c-plane sapphire. Such large scale semipolar GaN templates are opening the way for efficient semipolar devices grown heteroepitaxially.

Research paper thumbnail of GaN-based heterostructures grown on ZnO substrates: from polarity control to the fabrication of blue LEDs

Asia Communications and Photonics Conference 2014, 2014

Research paper thumbnail of Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Research paper thumbnail of Blue Light-Emitting Diodes Grown on ZnO Substrates

Applied Physics Express, 2013

ABSTRACT Blue light-emitting diodes (LEDs) grown on ZnO substrates were fabricated owing to the m... more ABSTRACT Blue light-emitting diodes (LEDs) grown on ZnO substrates were fabricated owing to the monolithic integration of an entire nitride-based LED structure including a GaN p-n junction and an (In,Ga) N/GaN multiple quantum well active region. The surface preparation of the ZnO substrate, as well as the GaN nucleation process, was developed to grow the structures and limit the inter diffusion of O from the substrate, which are the key points for the fabrication of a light-emitting device on ZnO. LEDs with a clear rectification behavior and electroluminescence over the blue range, from 415 to 450 nm, were demonstrated. (C) 2013 The Japan Society of Applied Physics

Research paper thumbnail of Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy : Cross correlation between structural and optical properties

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organi... more Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

Research paper thumbnail of Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

Semiconductor Science and Technology, 2015

Research paper thumbnail of Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Journal of Crystal Growth, 2014

We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane p... more We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition. Using a three-step growth method, planar (11-22) GaN epilayers on 2 in. wafers with significant optical and structural quality improvements have been obtained. The filtering of basal stacking faults and dislocations was achieved by overlapping adjacent crystals and forming voids between them. These voids act as a barrier to defect propagation which results in reduced defect density at the surface of the epilayer. Cathodoluminescence measurements at 80 K revealed a dislocation density of 5.1 Â 10 7 cm À 2 and a basal stacking fault density below 30 cm À 1 . Moreover, photoluminescence and X-ray diffraction measurements attested a material quality similar to conventional GaN on c-plane sapphire. Such large scale semipolar GaN templates are opening the way for efficient semipolar devices grown heteroepitaxially.

Research paper thumbnail of GaN-based heterostructures grown on ZnO substrates: from polarity control to the fabrication of blue LEDs

Asia Communications and Photonics Conference 2014, 2014

Research paper thumbnail of Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Research paper thumbnail of Blue Light-Emitting Diodes Grown on ZnO Substrates

Applied Physics Express, 2013

ABSTRACT Blue light-emitting diodes (LEDs) grown on ZnO substrates were fabricated owing to the m... more ABSTRACT Blue light-emitting diodes (LEDs) grown on ZnO substrates were fabricated owing to the monolithic integration of an entire nitride-based LED structure including a GaN p-n junction and an (In,Ga) N/GaN multiple quantum well active region. The surface preparation of the ZnO substrate, as well as the GaN nucleation process, was developed to grow the structures and limit the inter diffusion of O from the substrate, which are the key points for the fabrication of a light-emitting device on ZnO. LEDs with a clear rectification behavior and electroluminescence over the blue range, from 415 to 450 nm, were demonstrated. (C) 2013 The Japan Society of Applied Physics

Research paper thumbnail of Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy : Cross correlation between structural and optical properties

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organi... more Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

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