Muneeb Muneeb - Academia.edu (original) (raw)

Papers by Muneeb Muneeb

Optics Express, 2013

The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.... more The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8μm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

SPIE Proceedings, 2013

We review the integration of III-V semiconductors on silicon photonic integrated circuits as a wa... more We review the integration of III-V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and shortwave infrared spectroscopic sensors.

A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits usin... more A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divynilsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. High-quality bonding, with ultra-thin bonding layers (< 60 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Optical Materials Express, 2012

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platfo... more Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed siliconon-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Optics express, Jan 3, 2014

This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the short... more This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the shortwave infrared wavelength range based on an optimized arrayed waveguide grating (AWG) filter with an integrated photodiode array. The AWG response is designed to obtain large nearest neighbor crosstalk (i.e. large overlap) between output channels, which allows accurately measuring the wavelength of a laser under test using the centroid detection technique. The passive AWG is fabricated on a 220 nm silicon-on-insulator (SOI) platform and is combined with GaInAsSb-based photodiodes. The photodiodes are heterogeneously integrated on the output grating couplers of the AWG using DVS-BCB adhesive bonding. The complete device with AWG and detectors has a footprint of only 2 mm(2) while the measured accuracy and resolution of the detected wavelength is better than 20pm.

11th International Conference on Group IV Photonics (GFP), 2014

Smart Photonic and Optoelectronic Integrated Circuits XVI, 2014

Diabetes is a fast growing metabolic disease, where monitoring the blood glucose values in combin... more Diabetes is a fast growing metabolic disease, where monitoring the blood glucose values in combination with insulin injection is currently the only therapy to keep the glucose concentration in diabetic patients under control, minimizing the long-term effects of elevated glucose concentrations and improving quality of life of the diabetic patients. Implantable sensors allow continuous glucose monitoring, offering the most reliable data to control the glucose. Infrared spectroscopy is proposed as a non-chemical measurement method to determine the small glucose concentrations in blood serum, with promise for a long implantation time. In this work, a spectrometer platform based on silicon photonics is presented, allowing the realization of very small glucose sensors suitable for building implantable sensors. A proof-ofconcept of a spectrometer with integrated evanescent sample interface is presented, and the route towards a fully implantable spectrometer is discussed.

2013 IEEE Photonics Conference, 2013

The design and characterization of a silicon-on-insulator planar concave grating based (de)multip... more The design and characterization of a silicon-on-insulator planar concave grating based (de)multiplexer operating at 3.8μm is reported. Low insertion loss (≈1.6dB) and good crosstalk characteristics (≈19dB) are demonstrated.

2013 IEEE Photonics Conference, 2013

In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5... more In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2-5.4 µm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented. Index Terms-mid-infrared, photonic integrated circuits, germanium on silicon

In this paper, we review our work on efficient, broadband and polarization independent interfaces... more In this paper, we review our work on efficient, broadband and polarization independent interfaces between a silicon-oninsulator photonic IC and a single-mode optical fiber based on grating structures. The high alignment tolerance and the fact that the optical fiber interface is out-of-plane provide opportunities for easy packaging and wafer-scale testing of the photonic IC. Next to fiber-chip interfaces we will discuss the use of silicon grating structures in III-V on silicon optoelectronic components such as integrated photodetectors and microlasers.

Optics Express, 2013

The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.... more The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8μm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

SPIE Proceedings, 2013

We review the integration of III-V semiconductors on silicon photonic integrated circuits as a wa... more We review the integration of III-V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and shortwave infrared spectroscopic sensors.

A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits usin... more A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divynilsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. High-quality bonding, with ultra-thin bonding layers (< 60 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Optical Materials Express, 2012

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platfo... more Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed siliconon-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Optics express, Jan 3, 2014

This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the short... more This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the shortwave infrared wavelength range based on an optimized arrayed waveguide grating (AWG) filter with an integrated photodiode array. The AWG response is designed to obtain large nearest neighbor crosstalk (i.e. large overlap) between output channels, which allows accurately measuring the wavelength of a laser under test using the centroid detection technique. The passive AWG is fabricated on a 220 nm silicon-on-insulator (SOI) platform and is combined with GaInAsSb-based photodiodes. The photodiodes are heterogeneously integrated on the output grating couplers of the AWG using DVS-BCB adhesive bonding. The complete device with AWG and detectors has a footprint of only 2 mm(2) while the measured accuracy and resolution of the detected wavelength is better than 20pm.

11th International Conference on Group IV Photonics (GFP), 2014

Smart Photonic and Optoelectronic Integrated Circuits XVI, 2014

Diabetes is a fast growing metabolic disease, where monitoring the blood glucose values in combin... more Diabetes is a fast growing metabolic disease, where monitoring the blood glucose values in combination with insulin injection is currently the only therapy to keep the glucose concentration in diabetic patients under control, minimizing the long-term effects of elevated glucose concentrations and improving quality of life of the diabetic patients. Implantable sensors allow continuous glucose monitoring, offering the most reliable data to control the glucose. Infrared spectroscopy is proposed as a non-chemical measurement method to determine the small glucose concentrations in blood serum, with promise for a long implantation time. In this work, a spectrometer platform based on silicon photonics is presented, allowing the realization of very small glucose sensors suitable for building implantable sensors. A proof-ofconcept of a spectrometer with integrated evanescent sample interface is presented, and the route towards a fully implantable spectrometer is discussed.

2013 IEEE Photonics Conference, 2013

The design and characterization of a silicon-on-insulator planar concave grating based (de)multip... more The design and characterization of a silicon-on-insulator planar concave grating based (de)multiplexer operating at 3.8μm is reported. Low insertion loss (≈1.6dB) and good crosstalk characteristics (≈19dB) are demonstrated.

2013 IEEE Photonics Conference, 2013

In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5... more In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2-5.4 µm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented. Index Terms-mid-infrared, photonic integrated circuits, germanium on silicon

In this paper, we review our work on efficient, broadband and polarization independent interfaces... more In this paper, we review our work on efficient, broadband and polarization independent interfaces between a silicon-oninsulator photonic IC and a single-mode optical fiber based on grating structures. The high alignment tolerance and the fact that the optical fiber interface is out-of-plane provide opportunities for easy packaging and wafer-scale testing of the photonic IC. Next to fiber-chip interfaces we will discuss the use of silicon grating structures in III-V on silicon optoelectronic components such as integrated photodetectors and microlasers.