Multiple die-to-wafer adhesive bonding for heterogeneous integration (original) (raw)
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Optical Materials Express, 2012
Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed siliconon-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.
Frontiers in Materials, 2015
Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.
III-V/silicon photonics for on-chip and intra-chip optical interconnects
Laser & Photonics Reviews, 2010
In this paper III-V on silicon-on-insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter-chip and intra-chip optical interconnects. Two bonding technologies are used to realize the III-V/SOI integration: one based on molecular wafer bonding and the other based on DVS-BCB adhesive wafer bonding. The realization of micro-disk lasers, Fabry-Perot lasers, DFB lasers, DBR lasers and modelocked lasers on the III-V/SOI material platform is discussed. Artist impression of a multi-wavelength laser based on microdisk cavities realized on a III-V/SOI heterogeneous platform and a microscope image of a realized structure.
Metallic bonding of optoelectronic dies to silicon wafers
Journal of Physics: Conference Series, 2005
In future generation electronic circuits the severe bottleneck which is expected on the level of interconnections seems to has only one possible solution: that of using optical interconnection layers instead of the electrical ones. Our research focuses on the development of a die-to-wafer metallic bonding technique for the integration of a photonic wiring circuit on top of the CMOS wafer. Metal plating of the contact surfaces of both the optoelectronic devices and CMOS wafer pads using appropriate alloys are examined. After experiments with different metal alloys we decided to proceed with Au/Sn deposition on both CMOS and III-V photonics. Precise alloy composition has been achieved with multilayers and flat Si and InP dies have been successfully bonded on flat Si wafers using either hard Au-20Sn or soft Au-39Sn and Au-71Sn with solder joints thickness ranging from 0.1 to several µm. Experiments aiming to the study of alloys incorporating rare earths and their influence to the properties of the metallic bonding have been performed. Initial encouraging results are reported.
Heterogeneous integration of microdisk lasers on silicon strip waveguides for optical interconnects
IEEE Photonics Technology Letters, 2006
A new approach is proposed to realize an optical link for intrachip optical interconnects. This link includes III-V compound-based laser sources and photodetectors, and silicon-on-insulator-based strip waveguides. The heterogeneous integration of an InP-based microdisk laser with a silicon waveguide using SiO 2 -SiO 2 molecular bonding and nano-fabrication procedures is emphasized. The technological procedure is described and first experimental results show that, with an adequate configuration, 35% of light could be coupled from the optically pumped microlaser to the waveguide, as a result of the vertical evanescent coupling.
Journal of Electronic Materials, 2008
We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2.65 J/m2 after a 2-h 300°C anneal. O2 plasma treatment and surface chemistry optimization in dilute hydrofluoric (HF) solution and NH4OH vapor efficiently suppress the small-size interfacial void density down to 2 voids/cm2, dramatically increasing the wafer-bonded device yield. Bonding-induced strain, as determined by x-ray diffraction measurements, is negligible. The demonstration of a 50 mm InP epitaxial layer transferred to a silicon-on-insulator (SOI) substrate shows the promise of the method for wafer-scale applications.
Heterogeneous Integration of III-V Active Devices on a Silicon-on-Insulator Photonic Platform
2007 4th IEEE International Conference on Group IV Photonics, 2007
We present the heterogeneous integration of III-V active opto-electronic devices on top of a silicon-oninsulator photonic integrated circuit. This is achieved by adhesive die-to-wafer bonding of an unprocessed InP/InGaAsP epitaxial layer structure, after which laser diodes and photodetectors were fabricated in the bonded layer and optically coupled to the underlying silicon-oninsulator waveguide circuit.
Light: Science & Applications, 2019
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p–i–n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm−2, two...
III-V-on-Silicon Photonic Devices for Optical Communication and Sensing
Photonics, 2015
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.