Mustafa Jamil - Academia.edu (original) (raw)

Papers by Mustafa Jamil

MRS Proceedings, 2008

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly ... more ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate...

IEEE Transactions on Nanotechnology, 2011

We demonstrate a CMOS-compatible, nonvolatile, hybrid-memory device using fullerenes as a floatin... more We demonstrate a CMOS-compatible, nonvolatile, hybrid-memory device using fullerenes as a floating gate. In the hybrid MOS capacitors, organic fullerene molecules were encap- sulated between inorganic oxides, i.e., SiO2 as a tunnel oxide and HfO2 as a control oxide. Aluminum was e-beam deposited on the fullerenes and spontaneously oxidized to act as a nucleation layer for the HfO2 control oxide. Material characterization con- firmed the presence of fullerenes and high-k dielectric in the gate stack. Electrical characterization verified the memory operation of the devices. Finally, the molecular orbital energies of the fullerene molecules in the gate stack were estimated.

IEEE Electron Device Letters, 2011

ABSTRACT We report high-mobility Ge nMOSFETs using a simple approach to form n(+)-p junctions by ... more ABSTRACT We report high-mobility Ge nMOSFETs using a simple approach to form n(+)-p junctions by rapid thermal diffusion of "spin-on dopant" to avoid implantation damage. These junctions show a high I-ON/I-OFF ratio (similar to 10(5)-10(6)) and an ideality factor of similar to 1.03, indicating a low defect density in the junction, whereas ion-implanted junctions show higher I-OFF (by approximately one to two orders) and a larger ideality factor (n similar to 1.45). Germanium (100) nMOSFETs with diffusion doping and GeO2 passivation show a high I-ON/I-OFF ratio of similar to 10(4)-10(5), a low SS of 111 mV/decade, and a high mu(eff) (679 cm(2) . V-1 . s(-1) at peak). The diffusion-doped devices also show lower (approximately one order) GIDL and a higher (similar to 1.3x) drive current of similar to 12 mu A/mu m in an L similar to 20 mu m device at V-G -V-T = 2 V and V-D = 1 V, compared to the implanted devices. Moreover, diffusion-doped Ge (111) devices show even higher mu(eff) (970 cm(2) . V-1 . s(-1) at peak) and similar to 1.5x enhancement over the diffusion-doped Ge (100) devices and surpass the universal Si mobility at low effective fields.

variations

Md. Rashidul Hasan, Mustafa Jamil, Md. Golam Rabbani Md. Saifur Rahman Electrical and Electronic ... more Md. Rashidul Hasan, Mustafa Jamil, Md. Golam Rabbani Md. Saifur Rahman Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000 E-mail: saif672@yahoo.com ... ABSTRACT This paper presents a security system based on ...

Semiconductor Science and Technology, 2010

ABSTRACT This work presents the effects of Si-cap thickness and temperature on device performance... more ABSTRACT This work presents the effects of Si-cap thickness and temperature on device performance of buried channel Si/Ge1−xCx/Si p-MOSFETs. The silicon-cap thickness (3–9 nm), as well as the operating temperature (300 K down to 77 K), plays a significant role on device performance in terms of drive current, sub-threshold slope, effective hole mobility and Ion–Ioff ratio. The 7 nm Si-capped device demonstrates highest mobility enhancement because of reduced remote Coulomb scattering. In addition, the valence band offset between the Si-cap/Ge1−xCx interface was quantitatively extracted by fitting the stair-case behavior of split C–V characteristics with self-consistent simulations of one-dimensional Poisson and Schrodinger equations.

20 keV energy Mn ions were implanted in two samples: 1) bulk Ge (100) and 2) a 250 nm thick epita... more 20 keV energy Mn ions were implanted in two samples: 1) bulk Ge (100) and 2) a 250 nm thick epitaxial GeC film, grown on a Si (100) wafer. The GeC thin film was grown by UHV chemical vapor deposition using a mixture of germane (GeH4) and methylgermane (CH3GeH3) gases and contains less than 1% carbon. X-ray diffraction data shows a single crystal phase for the GeC film, and the surface rms roughness is about 0.3 nm, measured with AFM. The Mn implant dose was 1.1x10^16/cm^2 at a temperature of 300^oC for both samples. For this relatively low energy Mn ion implant, the range is about 17 nm and the straggle is about 9 nm. A SQUID magnetometer study shows ferromagnetism in both samples. While the Curie temperature for both samples is about 180 K, the in-plane saturated magnetic moment per unit area for the first sample is about 2.2x10-5emu/cm^2 and that for the second sample is about 3.0x10-5emu/cm^2. These results show clear enhancement of magnetic properties of the Mn-implanted GeC thi...

We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. ... more We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (rhoc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective

Kafkas Universitesi Veteriner Fakultesi Dergisi, 2015

Sheep and goats of Lahore district were examined for the prevalence, hematology and treatment of ... more Sheep and goats of Lahore district were examined for the prevalence, hematology and treatment of Balantidium coli. A total of 752 sheep and goats were examined (n=376 sheep; n=376 goats). Sheep had a somewhat greater prevalence (3.99%) than goats (3.46%). In both species, decrease in hemoglobin (Hb) and increased packed cell volume (PCV) was observed in infected animals. Efficacy of Secnidazole was higher as compared to Oxytetracycline and Metronidazole in all experimental animals. Balantidiasis is rarely studied infection in small ruminants and this is the first report published on the disease from Pakistan. It is still unclear whether this is an emerging infection, or whether it is a newly reported endemic in the studied area.

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012

Germanium is an attractive channel material for future CMOS scaling because of its higher electro... more Germanium is an attractive channel material for future CMOS scaling because of its higher electron (~2x) and hole (~4x) mobilities compared to Si. While high-performance Ge pFETs have been consistently demonstrated, Ge nFETs continue to show empirical electron mobilities inferior to that of Si. Two of the presumed culprits for this behavior are the high density of interface states (Dit)

MRS Proceedings, 2008

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly ... more ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate...

IEEE Transactions on Nanotechnology, 2011

We demonstrate a CMOS-compatible, nonvolatile, hybrid-memory device using fullerenes as a floatin... more We demonstrate a CMOS-compatible, nonvolatile, hybrid-memory device using fullerenes as a floating gate. In the hybrid MOS capacitors, organic fullerene molecules were encap- sulated between inorganic oxides, i.e., SiO2 as a tunnel oxide and HfO2 as a control oxide. Aluminum was e-beam deposited on the fullerenes and spontaneously oxidized to act as a nucleation layer for the HfO2 control oxide. Material characterization con- firmed the presence of fullerenes and high-k dielectric in the gate stack. Electrical characterization verified the memory operation of the devices. Finally, the molecular orbital energies of the fullerene molecules in the gate stack were estimated.

IEEE Electron Device Letters, 2011

ABSTRACT We report high-mobility Ge nMOSFETs using a simple approach to form n(+)-p junctions by ... more ABSTRACT We report high-mobility Ge nMOSFETs using a simple approach to form n(+)-p junctions by rapid thermal diffusion of "spin-on dopant" to avoid implantation damage. These junctions show a high I-ON/I-OFF ratio (similar to 10(5)-10(6)) and an ideality factor of similar to 1.03, indicating a low defect density in the junction, whereas ion-implanted junctions show higher I-OFF (by approximately one to two orders) and a larger ideality factor (n similar to 1.45). Germanium (100) nMOSFETs with diffusion doping and GeO2 passivation show a high I-ON/I-OFF ratio of similar to 10(4)-10(5), a low SS of 111 mV/decade, and a high mu(eff) (679 cm(2) . V-1 . s(-1) at peak). The diffusion-doped devices also show lower (approximately one order) GIDL and a higher (similar to 1.3x) drive current of similar to 12 mu A/mu m in an L similar to 20 mu m device at V-G -V-T = 2 V and V-D = 1 V, compared to the implanted devices. Moreover, diffusion-doped Ge (111) devices show even higher mu(eff) (970 cm(2) . V-1 . s(-1) at peak) and similar to 1.5x enhancement over the diffusion-doped Ge (100) devices and surpass the universal Si mobility at low effective fields.

variations

Md. Rashidul Hasan, Mustafa Jamil, Md. Golam Rabbani Md. Saifur Rahman Electrical and Electronic ... more Md. Rashidul Hasan, Mustafa Jamil, Md. Golam Rabbani Md. Saifur Rahman Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000 E-mail: saif672@yahoo.com ... ABSTRACT This paper presents a security system based on ...

Semiconductor Science and Technology, 2010

ABSTRACT This work presents the effects of Si-cap thickness and temperature on device performance... more ABSTRACT This work presents the effects of Si-cap thickness and temperature on device performance of buried channel Si/Ge1−xCx/Si p-MOSFETs. The silicon-cap thickness (3–9 nm), as well as the operating temperature (300 K down to 77 K), plays a significant role on device performance in terms of drive current, sub-threshold slope, effective hole mobility and Ion–Ioff ratio. The 7 nm Si-capped device demonstrates highest mobility enhancement because of reduced remote Coulomb scattering. In addition, the valence band offset between the Si-cap/Ge1−xCx interface was quantitatively extracted by fitting the stair-case behavior of split C–V characteristics with self-consistent simulations of one-dimensional Poisson and Schrodinger equations.

20 keV energy Mn ions were implanted in two samples: 1) bulk Ge (100) and 2) a 250 nm thick epita... more 20 keV energy Mn ions were implanted in two samples: 1) bulk Ge (100) and 2) a 250 nm thick epitaxial GeC film, grown on a Si (100) wafer. The GeC thin film was grown by UHV chemical vapor deposition using a mixture of germane (GeH4) and methylgermane (CH3GeH3) gases and contains less than 1% carbon. X-ray diffraction data shows a single crystal phase for the GeC film, and the surface rms roughness is about 0.3 nm, measured with AFM. The Mn implant dose was 1.1x10^16/cm^2 at a temperature of 300^oC for both samples. For this relatively low energy Mn ion implant, the range is about 17 nm and the straggle is about 9 nm. A SQUID magnetometer study shows ferromagnetism in both samples. While the Curie temperature for both samples is about 180 K, the in-plane saturated magnetic moment per unit area for the first sample is about 2.2x10-5emu/cm^2 and that for the second sample is about 3.0x10-5emu/cm^2. These results show clear enhancement of magnetic properties of the Mn-implanted GeC thi...

We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. ... more We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (rhoc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective

Kafkas Universitesi Veteriner Fakultesi Dergisi, 2015

Sheep and goats of Lahore district were examined for the prevalence, hematology and treatment of ... more Sheep and goats of Lahore district were examined for the prevalence, hematology and treatment of Balantidium coli. A total of 752 sheep and goats were examined (n=376 sheep; n=376 goats). Sheep had a somewhat greater prevalence (3.99%) than goats (3.46%). In both species, decrease in hemoglobin (Hb) and increased packed cell volume (PCV) was observed in infected animals. Efficacy of Secnidazole was higher as compared to Oxytetracycline and Metronidazole in all experimental animals. Balantidiasis is rarely studied infection in small ruminants and this is the first report published on the disease from Pakistan. It is still unclear whether this is an emerging infection, or whether it is a newly reported endemic in the studied area.

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012

Germanium is an attractive channel material for future CMOS scaling because of its higher electro... more Germanium is an attractive channel material for future CMOS scaling because of its higher electron (~2x) and hole (~4x) mobilities compared to Si. While high-performance Ge pFETs have been consistently demonstrated, Ge nFETs continue to show empirical electron mobilities inferior to that of Si. Two of the presumed culprits for this behavior are the high density of interface states (Dit)