Nhat Nguyen - Academia.edu (original) (raw)
Papers by Nhat Nguyen
2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007
2008 IEEE Symposium on VLSI Circuits, 2008
2014 27th International Conference on VLSI Design and 2014 13th International Conference on Embedded Systems, 2014
ABSTRACT An adaptive forward body biasing technique is implemented in a clock generation and dist... more ABSTRACT An adaptive forward body biasing technique is implemented in a clock generation and distribution test chip for memory interface applications to enable wide-range and high-fidelity operation. The proposed clock generation system employs a self-body-biased ring voltage-controlled oscillator (VCO) in a phase-locked loop (PLL) to adaptively adjust device body voltages over process and temperature variations. Moreover, a differential body-biasing technique incorporated in a duty cycle corrector (DCC) achieves effective correction range with minimal power overhead. The adaptive self-body-biasing technique extends PLL frequency locking range by more than 20 percent while reducing power supply induced jitter (PSIJ) by maximum 25 percent for increased yield and reliable operation.
IEEE Journal of Solid-State Circuits, 1992
IEEE Journal of Solid-State Circuits, 1992
Page 1. 444 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 27. NO. 3. MARCH 1992 A 1.8-GHz Monolithic... more Page 1. 444 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 27. NO. 3. MARCH 1992 A 1.8-GHz Monolithic LC Voltage-Controlled Oscillator Nhat M. Nguyen, Student Member, IEEE, and Robert G. Meyer, Fellow, IEEE Abstract ...
IEEE Journal of Solid-State Circuits, 1992
IEEE Journal of Solid-State Circuits, 1990
Page 1. 1028 APPENDIX &-ENHANCEMENT EFFECTS IN BANDPASS STRUCTURE OF FIG. 4 The c... more Page 1. 1028 APPENDIX &-ENHANCEMENT EFFECTS IN BANDPASS STRUCTURE OF FIG. 4 The characteristic equation of the filter of Fig. 4 using ideal OTAs can be expressed by with ideal pole frequency w, = g , / C and pole quality factor Q = gQD/gQ,. ...
IEEE Journal of Solid-State Circuits, 2000
2011 Symposium on Vlsi Technology Digest of Technical Papers, 2011
ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are... more ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are discussed within the context of CMOS process scaling. Key challenges include process variations, low Vdd/Vth ratio, interconnect parasitics, and model accuracy of key process parameters. It is shown that careful system architecture along with appropriate circuit techniques allow mobile memory interface to meet aggressive performance and power targets with conventional technology.
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), 2004
CMOS technology with a IV nominal supply. To minimize area and power consumption, the cell uses a... more CMOS technology with a IV nominal supply. To minimize area and power consumption, the cell uses a single dual-loop PLL. Gate-current leakage compensator is used to mitigate gate-current leakage in the PLL loop-filter capacitor. The quad cell consumes 73mWilink at 3.125Gbps ...
ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are... more ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are discussed within the context of CMOS process scaling. Key challenges include process variations, low Vdd/Vth ratio, interconnect parasitics, and model accuracy of key process parameters. It is shown that careful system architecture along with appropriate circuit techniques allow mobile memory interface to meet aggressive performance and power targets with conventional technology.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, 2011
Future generation graphics applications require more than 1TB/s memory bandwidth with a constant ... more Future generation graphics applications require more than 1TB/s memory bandwidth with a constant power budget as in today's systems. In contrast, future mobile applications require power optimized memory interfaces that can provide sufficient memory bandwidth on the order of 25GB/s. The difference in the optimization criteria results in different design challenges and consequently, different architectural and circuit-level design tradeoffs. In this paper, we compare two different memory interface design examples, one from each area operating at 16Gbps and 3.2Gbps per pin respectively, and highlight their major differences in terms of driver and receiver design, as well as clock generation and distribution. We will also discuss some of the problems facing future generations of memory interfaces that push the limits of performance and power efficiency.
2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, 2009
Page 1. Design and Characterization of a 12.8GB/s Low Power Differential Memory System for Mobile... more Page 1. Design and Characterization of a 12.8GB/s Low Power Differential Memory System for Mobile Applications Dan Oh, Sam Chang, Chris Madden, Joong-Ho Kim, Ralf Schmitt, Ming Li,Chuck Yuan Fred Ware, Brian Leibowitz, Yohan Frans, and Nhat Nguyen Rambus Inc. ...
2011 IEEE Custom Integrated Circuits Conference (CICC), 2011
Abstract Power-efficiency results from several generations of I/O interfaces with specific goals ... more Abstract Power-efficiency results from several generations of I/O interfaces with specific goals are presented as well as the tradeoffs made within and across those designs. Foundational work in active-power reduction at a single rate for a symmetric system, the ...
19th Topical Meeting on Electrical Performance of Electronic Packaging and Systems, 2010
AbstractThis paper experimentally investigates substrate noise and its impact on the jitter perf... more AbstractThis paper experimentally investigates substrate noise and its impact on the jitter performance of a low-power memory controller PHY interface using an on-chip substrate noise measurement structure. A previously proven on-chip supply noise measurement method is extended ...
2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007
2008 IEEE Symposium on VLSI Circuits, 2008
2014 27th International Conference on VLSI Design and 2014 13th International Conference on Embedded Systems, 2014
ABSTRACT An adaptive forward body biasing technique is implemented in a clock generation and dist... more ABSTRACT An adaptive forward body biasing technique is implemented in a clock generation and distribution test chip for memory interface applications to enable wide-range and high-fidelity operation. The proposed clock generation system employs a self-body-biased ring voltage-controlled oscillator (VCO) in a phase-locked loop (PLL) to adaptively adjust device body voltages over process and temperature variations. Moreover, a differential body-biasing technique incorporated in a duty cycle corrector (DCC) achieves effective correction range with minimal power overhead. The adaptive self-body-biasing technique extends PLL frequency locking range by more than 20 percent while reducing power supply induced jitter (PSIJ) by maximum 25 percent for increased yield and reliable operation.
IEEE Journal of Solid-State Circuits, 1992
IEEE Journal of Solid-State Circuits, 1992
Page 1. 444 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 27. NO. 3. MARCH 1992 A 1.8-GHz Monolithic... more Page 1. 444 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 27. NO. 3. MARCH 1992 A 1.8-GHz Monolithic LC Voltage-Controlled Oscillator Nhat M. Nguyen, Student Member, IEEE, and Robert G. Meyer, Fellow, IEEE Abstract ...
IEEE Journal of Solid-State Circuits, 1992
IEEE Journal of Solid-State Circuits, 1990
Page 1. 1028 APPENDIX &-ENHANCEMENT EFFECTS IN BANDPASS STRUCTURE OF FIG. 4 The c... more Page 1. 1028 APPENDIX &-ENHANCEMENT EFFECTS IN BANDPASS STRUCTURE OF FIG. 4 The characteristic equation of the filter of Fig. 4 using ideal OTAs can be expressed by with ideal pole frequency w, = g , / C and pole quality factor Q = gQD/gQ,. ...
IEEE Journal of Solid-State Circuits, 2000
2011 Symposium on Vlsi Technology Digest of Technical Papers, 2011
ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are... more ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are discussed within the context of CMOS process scaling. Key challenges include process variations, low Vdd/Vth ratio, interconnect parasitics, and model accuracy of key process parameters. It is shown that careful system architecture along with appropriate circuit techniques allow mobile memory interface to meet aggressive performance and power targets with conventional technology.
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), 2004
CMOS technology with a IV nominal supply. To minimize area and power consumption, the cell uses a... more CMOS technology with a IV nominal supply. To minimize area and power consumption, the cell uses a single dual-loop PLL. Gate-current leakage compensator is used to mitigate gate-current leakage in the PLL loop-filter capacitor. The quad cell consumes 73mWilink at 3.125Gbps ...
ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are... more ABSTRACT Design requirements for low-power and high-speed memory interfaces in mobile systems are discussed within the context of CMOS process scaling. Key challenges include process variations, low Vdd/Vth ratio, interconnect parasitics, and model accuracy of key process parameters. It is shown that careful system architecture along with appropriate circuit techniques allow mobile memory interface to meet aggressive performance and power targets with conventional technology.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, 2011
Future generation graphics applications require more than 1TB/s memory bandwidth with a constant ... more Future generation graphics applications require more than 1TB/s memory bandwidth with a constant power budget as in today's systems. In contrast, future mobile applications require power optimized memory interfaces that can provide sufficient memory bandwidth on the order of 25GB/s. The difference in the optimization criteria results in different design challenges and consequently, different architectural and circuit-level design tradeoffs. In this paper, we compare two different memory interface design examples, one from each area operating at 16Gbps and 3.2Gbps per pin respectively, and highlight their major differences in terms of driver and receiver design, as well as clock generation and distribution. We will also discuss some of the problems facing future generations of memory interfaces that push the limits of performance and power efficiency.
2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, 2009
Page 1. Design and Characterization of a 12.8GB/s Low Power Differential Memory System for Mobile... more Page 1. Design and Characterization of a 12.8GB/s Low Power Differential Memory System for Mobile Applications Dan Oh, Sam Chang, Chris Madden, Joong-Ho Kim, Ralf Schmitt, Ming Li,Chuck Yuan Fred Ware, Brian Leibowitz, Yohan Frans, and Nhat Nguyen Rambus Inc. ...
2011 IEEE Custom Integrated Circuits Conference (CICC), 2011
Abstract Power-efficiency results from several generations of I/O interfaces with specific goals ... more Abstract Power-efficiency results from several generations of I/O interfaces with specific goals are presented as well as the tradeoffs made within and across those designs. Foundational work in active-power reduction at a single rate for a symmetric system, the ...
19th Topical Meeting on Electrical Performance of Electronic Packaging and Systems, 2010
AbstractThis paper experimentally investigates substrate noise and its impact on the jitter perf... more AbstractThis paper experimentally investigates substrate noise and its impact on the jitter performance of a low-power memory controller PHY interface using an on-chip substrate noise measurement structure. A previously proven on-chip supply noise measurement method is extended ...