Peter Gaiduk - Academia.edu (original) (raw)
Papers by Peter Gaiduk
The optical properties of metallic tin nanoparticles embedded in silicon-based host materials wer... more The optical properties of metallic tin nanoparticles embedded in silicon-based host materials were studied. Thin films containing the nanoparticles were produced using RF magnetron sputtering followed by ex situ heat treatment. Transmission electron microscopy was used to determine the nanoparticle shape and size distribution; spherical, metallic tin nanoparticles were always found. The presence of a localized surface plasmon resonance in the nanoparticles was observed when SiO2 and amorphous silicon were the host materials. Optical spectroscopy revealed that the localized surface plasmon resonance is at approximately 5.5 eV for tin nanoparticles in SiO2, and at approximately 2.5 eV in amorphous silicon. The size of the tin nanoparticles in SiO2 can be varied by changing the tin content of the films; this was used to tune the localized surface plasmon resonance.
Physical Review B, 2002
... 976564 and the Danish Strategic Material Re-search Program. *Corresponding author. Electronic... more ... 976564 and the Danish Strategic Material Re-search Program. *Corresponding author. Electronic address: gaiduk@ifa.au.dk 1 N. Bohr, Mat. Fys. Medd. K. Dan. ... Solids 59–60, 541 1983. 31 S. Yu. Shiryaev, M. Fyhn, and A. Nylandsted Larsen, Appl. Phys. Lett. 63, 3476 1993. ...
MRS Proceedings, 2004
ABSTRACTA method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam ep... more ABSTRACTA method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam epitaxy (MBE) and rapid thermal processing (RTP) is presented. The method takes advantage of the very high precision by which a very thin Ge layer can be deposited by MBE. With proper choice of process parameters the nanocrystal size can be varied between ∼3 and ∼8 nm and the area-density between ∼1×1011 and ∼1×1012 dots/cm2. The tunneling oxide thickness is determined by the thickness of a thermally grown SiO2 layer, and is typically 4 nm. C-V measurements of MOS capacitors reveal hole and electron injection from the substrate into the nanocrystals. Memory windows of about 0.2 and 0.5 V for gate-voltage sweeps of 3 and 6 V, respectively, are achieved.
Journal of Applied Physics, 1997
... This behavior is probably caused as already stated by Gibbons for implantation into Si by... more ... This behavior is probably caused as already stated by Gibbons for implantation into Si by the dilute collision cascades in the case of light ions, which may promote defect ... In the present paper ion beam induced damaging and amorphization of crystalline InP is ...
Applied Physics A, 2005
Applied Physics A a. kanjilal 1 j.l. hansen 1 p. gaiduk 1 a. nylandsted larsen 1,u p. normand 2 p... more Applied Physics A a. kanjilal 1 j.l. hansen 1 p. gaiduk 1 a. nylandsted larsen 1,u p. normand 2 p. dimitrakis 2 d. tsoukalas 2 n. cherkashin 3 a. claverie 3
Applied Physics Letters, 2003
Vacuum, 2004
Silicon layers of 150 nm thickness supersaturated with indium up to E5 at% were prepared by multi... more Silicon layers of 150 nm thickness supersaturated with indium up to E5 at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal decomposition of the supersaturated Si/InS solution is accompanied by polycrystalline recrystallisation of amorphous silicon, precipitation of the second phase (In) both within the implanted layer and on the surface, as well as by impurity redistribution. The main features of the structure transformation under the influence of the Bi ion irradiation are discussed.
physica status solidi (b)
Physical Review B
Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rut... more Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rutherford backscattering spectrometry using a channeling technique and cross-section TEM. Different concentrations and types of defects are created at different depths of the trajectory due to the different dominating interaction processes. Depending on the ion fluence the formation of discontinuous tracks and amorphous layers was registered in the depth region of high electronic energy loss of the incident ions. The observed findings are interpreted as the effect of a thermal spike in combination with damage accumulation resulting from imperfect epitaxial recrystallization of the molten ion tracks. ͓S0163-1829͑98͒05432-0͔
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Damage production in crystalline InP by swift Kr-and Xe-ions at room temperature was studied by c... more Damage production in crystalline InP by swift Kr-and Xe-ions at room temperature was studied by cross section TEM and RBS. The type and concentration of defects varies with depth due to the dierent dominating interaction processes of the ions with the solid. A¯uence-dependent damage production is observed in the region of dominating electronic excitation for an electronic energy deposition above %13 keV/(ion nm). Depending on the ion¯uence point defect complexes, discontinuous tracks or amorphous layers are formed. The observed ®ndings are interpreted as the eect of a thermal spike in combination with damage accumulation resulting from imperfect recrystallization of the molten tracks.
Physical Review B
Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swif... more Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift ͑250 and 340 MeV͒ Xe ϩ ions to doses of 5ϫ10 13 and 1ϫ10 14 cm Ϫ2 , respectively, are investigated by transmission electron microscopy. For ion fluences above 5ϫ10 13 cm Ϫ2 , amorphization is registered in the near-surface region as well as around the mean ion range. The amorphous layers produced due to electronic energy deposition in the near-surface region are found to have different short-range atomic structure as compared to those produced in the depth region of nuclear energy deposition. In the case of the highest ion fluence (1 ϫ10 14 cm Ϫ2) a partial crystallization of the amorphous surface layer to polycrystalline InP is observed. The process of the crystallization passes a stage of wurtzite InP phase formation.
physica status solidi (c), 2014
ABSTRACT By combining secondary ion-mass spectrometry, transmission-electron microscopy (TEM) and... more ABSTRACT By combining secondary ion-mass spectrometry, transmission-electron microscopy (TEM) and Rutherford-backscattering spectrometry we show that the redistribution of implanted carbon atoms around epitaxially strained Si/SiGe layers results in their accumulation on the Si side and depletion on the SiGe side. On the contrary, uphill diffusion of carbon into SiSn layers takes place in the case of Si/SiSn structures. The TEM study demonstrates formation of dislocation loops, stacking faults and interstitial clusters in the Si/SiGe layers, but elimination of interstitial dislocation loops and suppression of tin precipitates in the Si/SiSn layers. We deduced different evolution of dislocation loops and a precipitate is due to dopant-defect complexes. The complex formation is enhanced by separation of implanted point defects in strain-fields of Si/SiSn and Si/SiGe layers. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Eprint Arxiv 0812 4680, Dec 26, 2008
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chem... more A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and rutherford back scattering spectrometry, as well as electrically by measuring CV and IV characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots are situated in the SiO2 on the average distance 5 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge nanodot layer is demonstrated by the hysteresis behavior of the high frequency CV curves.
Physical Review B, 2003
ABSTRACT We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layer... more ABSTRACT We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layered structure after 800-keV Ge ion implantation followed by rapid thermal annealing. The voids are of nanometer size and are solely assembled in thin SiGe quantum wells in the surface region (<R-p/2) of the implanted sample. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The strain situation around the SiGe quantum wells is suggested as a possible reason for the void self-assembling effect.
Physical Review B, 2003
ABSTRACT Spherically shaped voids, of nanometer size, are observed in molecular-beam epitaxially ... more ABSTRACT Spherically shaped voids, of nanometer size, are observed in molecular-beam epitaxially grown SiGe alloy layers implanted in-situ at elevated temperature with low-energy Ge ions, followed by thermal treatments. The voids are exclusively assembled in the narrow, implanted band. The voids only appear in the layers after a heat treatment at a temperature higher than 700 °C, and they are stable up to 900 °C. Arsenic ion implantation at similar conditions does not give rise to void formation but to regular interstitial dislocation loops. The nucleation stage of the voids is accompanied by a strong photoluminescence-yield enhancement in the range of 1.4 1.55 μm, originating from the strained SiGe alloy layer which contain vacancy clusters or small voids.
Radiation effects
ABSTRACT
The optical properties of metallic tin nanoparticles embedded in silicon-based host materials wer... more The optical properties of metallic tin nanoparticles embedded in silicon-based host materials were studied. Thin films containing the nanoparticles were produced using RF magnetron sputtering followed by ex situ heat treatment. Transmission electron microscopy was used to determine the nanoparticle shape and size distribution; spherical, metallic tin nanoparticles were always found. The presence of a localized surface plasmon resonance in the nanoparticles was observed when SiO2 and amorphous silicon were the host materials. Optical spectroscopy revealed that the localized surface plasmon resonance is at approximately 5.5 eV for tin nanoparticles in SiO2, and at approximately 2.5 eV in amorphous silicon. The size of the tin nanoparticles in SiO2 can be varied by changing the tin content of the films; this was used to tune the localized surface plasmon resonance.
Physical Review B, 2002
... 976564 and the Danish Strategic Material Re-search Program. *Corresponding author. Electronic... more ... 976564 and the Danish Strategic Material Re-search Program. *Corresponding author. Electronic address: gaiduk@ifa.au.dk 1 N. Bohr, Mat. Fys. Medd. K. Dan. ... Solids 59–60, 541 1983. 31 S. Yu. Shiryaev, M. Fyhn, and A. Nylandsted Larsen, Appl. Phys. Lett. 63, 3476 1993. ...
MRS Proceedings, 2004
ABSTRACTA method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam ep... more ABSTRACTA method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam epitaxy (MBE) and rapid thermal processing (RTP) is presented. The method takes advantage of the very high precision by which a very thin Ge layer can be deposited by MBE. With proper choice of process parameters the nanocrystal size can be varied between ∼3 and ∼8 nm and the area-density between ∼1×1011 and ∼1×1012 dots/cm2. The tunneling oxide thickness is determined by the thickness of a thermally grown SiO2 layer, and is typically 4 nm. C-V measurements of MOS capacitors reveal hole and electron injection from the substrate into the nanocrystals. Memory windows of about 0.2 and 0.5 V for gate-voltage sweeps of 3 and 6 V, respectively, are achieved.
Journal of Applied Physics, 1997
... This behavior is probably caused as already stated by Gibbons for implantation into Si by... more ... This behavior is probably caused as already stated by Gibbons for implantation into Si by the dilute collision cascades in the case of light ions, which may promote defect ... In the present paper ion beam induced damaging and amorphization of crystalline InP is ...
Applied Physics A, 2005
Applied Physics A a. kanjilal 1 j.l. hansen 1 p. gaiduk 1 a. nylandsted larsen 1,u p. normand 2 p... more Applied Physics A a. kanjilal 1 j.l. hansen 1 p. gaiduk 1 a. nylandsted larsen 1,u p. normand 2 p. dimitrakis 2 d. tsoukalas 2 n. cherkashin 3 a. claverie 3
Applied Physics Letters, 2003
Vacuum, 2004
Silicon layers of 150 nm thickness supersaturated with indium up to E5 at% were prepared by multi... more Silicon layers of 150 nm thickness supersaturated with indium up to E5 at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal decomposition of the supersaturated Si/InS solution is accompanied by polycrystalline recrystallisation of amorphous silicon, precipitation of the second phase (In) both within the implanted layer and on the surface, as well as by impurity redistribution. The main features of the structure transformation under the influence of the Bi ion irradiation are discussed.
physica status solidi (b)
Physical Review B
Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rut... more Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rutherford backscattering spectrometry using a channeling technique and cross-section TEM. Different concentrations and types of defects are created at different depths of the trajectory due to the different dominating interaction processes. Depending on the ion fluence the formation of discontinuous tracks and amorphous layers was registered in the depth region of high electronic energy loss of the incident ions. The observed findings are interpreted as the effect of a thermal spike in combination with damage accumulation resulting from imperfect epitaxial recrystallization of the molten ion tracks. ͓S0163-1829͑98͒05432-0͔
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Damage production in crystalline InP by swift Kr-and Xe-ions at room temperature was studied by c... more Damage production in crystalline InP by swift Kr-and Xe-ions at room temperature was studied by cross section TEM and RBS. The type and concentration of defects varies with depth due to the dierent dominating interaction processes of the ions with the solid. A¯uence-dependent damage production is observed in the region of dominating electronic excitation for an electronic energy deposition above %13 keV/(ion nm). Depending on the ion¯uence point defect complexes, discontinuous tracks or amorphous layers are formed. The observed ®ndings are interpreted as the eect of a thermal spike in combination with damage accumulation resulting from imperfect recrystallization of the molten tracks.
Physical Review B
Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swif... more Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift ͑250 and 340 MeV͒ Xe ϩ ions to doses of 5ϫ10 13 and 1ϫ10 14 cm Ϫ2 , respectively, are investigated by transmission electron microscopy. For ion fluences above 5ϫ10 13 cm Ϫ2 , amorphization is registered in the near-surface region as well as around the mean ion range. The amorphous layers produced due to electronic energy deposition in the near-surface region are found to have different short-range atomic structure as compared to those produced in the depth region of nuclear energy deposition. In the case of the highest ion fluence (1 ϫ10 14 cm Ϫ2) a partial crystallization of the amorphous surface layer to polycrystalline InP is observed. The process of the crystallization passes a stage of wurtzite InP phase formation.
physica status solidi (c), 2014
ABSTRACT By combining secondary ion-mass spectrometry, transmission-electron microscopy (TEM) and... more ABSTRACT By combining secondary ion-mass spectrometry, transmission-electron microscopy (TEM) and Rutherford-backscattering spectrometry we show that the redistribution of implanted carbon atoms around epitaxially strained Si/SiGe layers results in their accumulation on the Si side and depletion on the SiGe side. On the contrary, uphill diffusion of carbon into SiSn layers takes place in the case of Si/SiSn structures. The TEM study demonstrates formation of dislocation loops, stacking faults and interstitial clusters in the Si/SiGe layers, but elimination of interstitial dislocation loops and suppression of tin precipitates in the Si/SiSn layers. We deduced different evolution of dislocation loops and a precipitate is due to dopant-defect complexes. The complex formation is enhanced by separation of implanted point defects in strain-fields of Si/SiSn and Si/SiGe layers. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Eprint Arxiv 0812 4680, Dec 26, 2008
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chem... more A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and rutherford back scattering spectrometry, as well as electrically by measuring CV and IV characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots are situated in the SiO2 on the average distance 5 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge nanodot layer is demonstrated by the hysteresis behavior of the high frequency CV curves.
Physical Review B, 2003
ABSTRACT We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layer... more ABSTRACT We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layered structure after 800-keV Ge ion implantation followed by rapid thermal annealing. The voids are of nanometer size and are solely assembled in thin SiGe quantum wells in the surface region (<R-p/2) of the implanted sample. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The strain situation around the SiGe quantum wells is suggested as a possible reason for the void self-assembling effect.
Physical Review B, 2003
ABSTRACT Spherically shaped voids, of nanometer size, are observed in molecular-beam epitaxially ... more ABSTRACT Spherically shaped voids, of nanometer size, are observed in molecular-beam epitaxially grown SiGe alloy layers implanted in-situ at elevated temperature with low-energy Ge ions, followed by thermal treatments. The voids are exclusively assembled in the narrow, implanted band. The voids only appear in the layers after a heat treatment at a temperature higher than 700 °C, and they are stable up to 900 °C. Arsenic ion implantation at similar conditions does not give rise to void formation but to regular interstitial dislocation loops. The nucleation stage of the voids is accompanied by a strong photoluminescence-yield enhancement in the range of 1.4 1.55 μm, originating from the strained SiGe alloy layer which contain vacancy clusters or small voids.
Radiation effects
ABSTRACT