Paulius Sakalas - Academia.edu (original) (raw)
Papers by Paulius Sakalas
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017
High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors... more High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.
Bookmarks Related papers MentionsView impact
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such ... more An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.
Bookmarks Related papers MentionsView impact
2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015
A two stage cascode low noise amplifier using tapered inductors with optimized quality factors wa... more A two stage cascode low noise amplifier using tapered inductors with optimized quality factors was designed in a 130 nm logic CMOS process. The K-band (24 GHz-26.5 GHz) LNA consumes 11.25 mW DC power for a supply voltage of 1.5 V, achieves 27.5 dB peak transducer gain and 3.88 dB noise figure (NF) at 25 GHz. S11 and S22 at 25 GHz are -13 dB and -10 dB, respectively. It achieves a minimum NF of 3.5 dB at 24 GHz and within the entire frequency band of interest the NF is less than 5 dB. IIP3 of the LNA is -11 dBm and the LNA including pads occupies an area of 830μm × 800μm.
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 1982
Bookmarks Related papers MentionsView impact
HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable C... more HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-fin ger CNTFETs exhibit still rela tively high values for the minimum noise figure (NF min = 3.5 dB at 1 GHz). Based on detailed compact modelin g, the ori gin of this noise can be explained by the existence of the parasitic network and metallic tubes. Keywords-compone nt:
Bookmarks Related papers MentionsView impact
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021
Bookmarks Related papers MentionsView impact
IEEE Microwave and Wireless Components Letters, 2019
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2016
Bookmarks Related papers MentionsView impact
IMTC 2001. Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference. Rediscovering Measurement in the Age of Informatics (Cat. No.01CH 37188)
Bookmarks Related papers MentionsView impact
30th European Microwave Conference, 2000, 2000
Bookmarks Related papers MentionsView impact
IEEE Transactions on Microwave Theory and Techniques, 2012
Bookmarks Related papers MentionsView impact
IEEE Microwave and Guided Wave Letters, 2000
This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-l... more This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (TD) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed.
Bookmarks Related papers MentionsView impact
physica status solidi (c), 2008
1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, ... more 1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, 73100 Chania, Greece 3 FPL, Semiconductor Physics Institute, 01108 Vilnius, Lithuania 4 Technical University of Dresden, 01069 Dresden, Germany 5 ECE Department, ...
Bookmarks Related papers MentionsView impact
IEEE Journal of Microwaves, 2021
Bookmarks Related papers MentionsView impact
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016
A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on ac... more A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.
Bookmarks Related papers MentionsView impact
Nonlinear Analysis: Modelling and Control, 1998
Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced ... more Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.
Bookmarks Related papers MentionsView impact
Microelectronics Reliability, 2004
Bookmarks Related papers MentionsView impact
… WSL (IMS/RFIC)- …, 2009
Please be patient while the object screen loads. Changez de vue : Choisir un site UCL FUNDP FUSL... more Please be patient while the object screen loads. Changez de vue : Choisir un site UCL FUNDP FUSL FUCaM. ...
Bookmarks Related papers MentionsView impact
Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequenc... more Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the carriers. The impact of Schottky-barriers on the escape time is discussed both analytically and by means of transient simulations. A comparison with experimental data reveals an interesting qualitative similarity. Index Terms-CNTFET, ballistic transport, high-frequency behavior, gate capacitance, double barrier structure, non-quasistatic phenomena, escape time
Bookmarks Related papers MentionsView impact
IEEE Transactions on Microwave Theory and Techniques, 2021
A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featur... more A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featuring high-speed heterojunction bipolar transistors (HBTs) with (<inline-formula> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$f_{\text {max}}$ </tex-math></inline-formula>) = (300, 500) GHz is presented. The core part of the receiver consists of a low-noise amplifier (LNA), an active tunable fundamental mixer, an intermediate frequency (IF) buffer amplifier (BA), and an active inverse balun. A wideband, high conversion gain (CG) local oscillator (LO) chain is integrated to make the receiver suitable for applications requiring tunable LO, which contains a multiplier with a multiplication factor of 12 (<inline-formula> <tex-math notation="LaTeX">$\times 12$ </tex-math></inline-formula>) and a driver amplifier. To explo...
Bookmarks Related papers MentionsView impact
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017
High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors... more High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.
Bookmarks Related papers MentionsView impact
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such ... more An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.
Bookmarks Related papers MentionsView impact
2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015
A two stage cascode low noise amplifier using tapered inductors with optimized quality factors wa... more A two stage cascode low noise amplifier using tapered inductors with optimized quality factors was designed in a 130 nm logic CMOS process. The K-band (24 GHz-26.5 GHz) LNA consumes 11.25 mW DC power for a supply voltage of 1.5 V, achieves 27.5 dB peak transducer gain and 3.88 dB noise figure (NF) at 25 GHz. S11 and S22 at 25 GHz are -13 dB and -10 dB, respectively. It achieves a minimum NF of 3.5 dB at 24 GHz and within the entire frequency band of interest the NF is less than 5 dB. IIP3 of the LNA is -11 dBm and the LNA including pads occupies an area of 830μm × 800μm.
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 1982
Bookmarks Related papers MentionsView impact
HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable C... more HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-fin ger CNTFETs exhibit still rela tively high values for the minimum noise figure (NF min = 3.5 dB at 1 GHz). Based on detailed compact modelin g, the ori gin of this noise can be explained by the existence of the parasitic network and metallic tubes. Keywords-compone nt:
Bookmarks Related papers MentionsView impact
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021
Bookmarks Related papers MentionsView impact
IEEE Microwave and Wireless Components Letters, 2019
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2016
Bookmarks Related papers MentionsView impact
IMTC 2001. Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference. Rediscovering Measurement in the Age of Informatics (Cat. No.01CH 37188)
Bookmarks Related papers MentionsView impact
30th European Microwave Conference, 2000, 2000
Bookmarks Related papers MentionsView impact
IEEE Transactions on Microwave Theory and Techniques, 2012
Bookmarks Related papers MentionsView impact
IEEE Microwave and Guided Wave Letters, 2000
This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-l... more This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (TD) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed.
Bookmarks Related papers MentionsView impact
physica status solidi (c), 2008
1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, ... more 1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, 73100 Chania, Greece 3 FPL, Semiconductor Physics Institute, 01108 Vilnius, Lithuania 4 Technical University of Dresden, 01069 Dresden, Germany 5 ECE Department, ...
Bookmarks Related papers MentionsView impact
IEEE Journal of Microwaves, 2021
Bookmarks Related papers MentionsView impact
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016
A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on ac... more A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.
Bookmarks Related papers MentionsView impact
Nonlinear Analysis: Modelling and Control, 1998
Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced ... more Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.
Bookmarks Related papers MentionsView impact
Microelectronics Reliability, 2004
Bookmarks Related papers MentionsView impact
… WSL (IMS/RFIC)- …, 2009
Please be patient while the object screen loads. Changez de vue : Choisir un site UCL FUNDP FUSL... more Please be patient while the object screen loads. Changez de vue : Choisir un site UCL FUNDP FUSL FUCaM. ...
Bookmarks Related papers MentionsView impact
Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequenc... more Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the carriers. The impact of Schottky-barriers on the escape time is discussed both analytically and by means of transient simulations. A comparison with experimental data reveals an interesting qualitative similarity. Index Terms-CNTFET, ballistic transport, high-frequency behavior, gate capacitance, double barrier structure, non-quasistatic phenomena, escape time
Bookmarks Related papers MentionsView impact
IEEE Transactions on Microwave Theory and Techniques, 2021
A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featur... more A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featuring high-speed heterojunction bipolar transistors (HBTs) with (<inline-formula> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$f_{\text {max}}$ </tex-math></inline-formula>) = (300, 500) GHz is presented. The core part of the receiver consists of a low-noise amplifier (LNA), an active tunable fundamental mixer, an intermediate frequency (IF) buffer amplifier (BA), and an active inverse balun. A wideband, high conversion gain (CG) local oscillator (LO) chain is integrated to make the receiver suitable for applications requiring tunable LO, which contains a multiplier with a multiplication factor of 12 (<inline-formula> <tex-math notation="LaTeX">$\times 12$ </tex-math></inline-formula>) and a driver amplifier. To explo...
Bookmarks Related papers MentionsView impact