Paulius Sakalas - Profile on Academia.edu (original) (raw)

Papers by Paulius Sakalas

Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017

High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors... more High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.

SiGe HBT modeling for mm-wave circuit design

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015

An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such ... more An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.

A K-band high gain, low noise figure LNA using 0.13 μm logic CMOS technology

2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015

A two stage cascode low noise amplifier using tapered inductors with optimized quality factors wa... more A two stage cascode low noise amplifier using tapered inductors with optimized quality factors was designed in a 130 nm logic CMOS process. The K-band (24 GHz-26.5 GHz) LNA consumes 11.25 mW DC power for a supply voltage of 1.5 V, achieves 27.5 dB peak transducer gain and 3.88 dB noise figure (NF) at 25 GHz. S11 and S22 at 25 GHz are -13 dB and -10 dB, respectively. It achieves a minimum NF of 3.5 dB at 24 GHz and within the entire frequency band of interest the NF is less than 5 dB. IIP3 of the LNA is -11 dBm and the LNA including pads occupies an area of 830μm × 800μm.

IEEE Transactions on Electron Devices, 1982

Noise measurements in a short, near-ballistic, n+-n-n+ GaAs diode are reported. The device had a ... more Noise measurements in a short, near-ballistic, n+-n-n+ GaAs diode are reported. The device had a linear characteristic below 100 mA. It showed l/f noise at low frequencies and a white noise close to the thermal noise of the device conductance g at high frequencies. The l/f noise is most likely mobility fluctuation noise; we evaluated Hooge's parameter a and found a value of 1.95 X at room temperature and 0.959 X at liquid nitrogen temperature. We also observed a l/fnoise spectrum turning over into l/f0.5 spectrum at 77 K.

High Frequency Noise in Manufacturable

HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable C... more HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-fin ger CNTFETs exhibit still rela tively high values for the minimum noise figure (NF min = 3.5 dB at 1 GHz). Based on detailed compact modelin g, the ori gin of this noise can be explained by the existence of the parasitic network and metallic tubes. Keywords-compone nt:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021

The theory, design and implementation of emittercoupled logic (ECL) based voltage-controlled ring... more The theory, design and implementation of emittercoupled logic (ECL) based voltage-controlled ring oscillators (R-VCOs) operating at X-and Ku-band for cryogenic applications are presented. Five-and seven-stage R-VCOs were fabricated in a 130 nm SiGe:C BiCMOS process technology. They provide differential multi-phased local oscillator (LO) signals with a maximum time resolution of 5.4 ps and can operate at both room temperature (RT) and cryogenic temperature (CT). For designing under cryogenic conditions (6 K), the compact model HICUM/L2 was extended and the corresponding model parameters were extracted at CTs. The implemented 5-/7-stage R-VCOs offer an adjustable frequency range of 9.7 to 16.5 GHz (52%) and 8.4 to 13.3 GHz (45%), respectively, with a maximum core power dissipation of 153 mW and 165 mW. At 6 K, the frequency of operation can be increased up to 18 GHz while the power dissipation increases by only 30 mW. The R-VCOs occupy a very compact active area of 0.04 mm 2 and 0.12 mm 2. The phase noise of the R-VCOs at 16.5/13 GHz at an offset frequency of 10 MHz is-106.3/-107.3 dBc/Hz. They provide up to-6 dBm of saturated differential output power. To the best of the authors' knowledge, this is the first time an HBT-based 5-/7-stage R-VCO is being presented at X-and Ku-band that can operate under cryogenic conditions.

IEEE Microwave and Wireless Components Letters, 2019

This letter presents a 97-GHz downconversion mixer in a 130-nm SiGe HBT technology. For achieving... more This letter presents a 97-GHz downconversion mixer in a 130-nm SiGe HBT technology. For achieving the demonstrated ultralow dc power consumption, the mixer was designed with transistors operating in saturation using an accurate compact model. With 0.7-V supply voltage and −5-dBm local oscillator pumping power, this mixer achieves a double-sideband conversion gain (CG) of 6.6 ± 3 dB over the RF frequency range from 91 to 100 GHz, consuming 12-mW static dc power. With the supply voltage further reduced to 0.5 V, this mixer still works with a maximum upper-sideband CG of 5.2 dB from 94 to 100 GHz, with only 8-mW static power consumption.

IEEE Transactions on Electron Devices, 2016

IMTC 2001. Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference. Rediscovering Measurement in the Age of Informatics (Cat. No.01CH 37188)

This paperpresents a procedure for an accurate characterization of parasitic effects of terminal ... more This paperpresents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit.

30th European Microwave Conference, 2000, 2000

A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of... more A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of the intrinsic HFETs were measured and simulated by using Pospieszalski noise model. Extracted drain and gate temperatures were used for the characterization of the amplifier noise properties. An input match better than-20 dB in a wide band from 2 to 6 GHz and-10 dB from 1-13 GHz with corresponding 11 dB gain was obtained. NF min of 3 dB was found experimentally at room temperature. A dc power dissipation of less than 20 mW is possible to obtain with this device technology. The total chip area is 2x1.5 mm 2. The active circuit area is less than 1 mm 2 .We have simulated amplifiers rf and noise performance with the wider gate HFET at the input.

IEEE Transactions on Microwave Theory and Techniques, 2012

A systematic method for the integration of correlated shot-noise sources into compact models (CMs... more A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theory approach, and hence, is not limited to specific CM or device type. In this paper, the method is applied to the CM HICUM, which serves a vehicle for verification purposes. The method and its implementation were verified for SiGe heterojunction bipolar transistors based on measured data for frequencies up to 50 GHz, as well as on device simulation data up to 500 GHz, obtained from simulations of both hydrodynamic and a Boltzmann transport model.

Microwave noise modeling of InP based MODFETs biased for low power consumption

IEEE Microwave and Guided Wave Letters, 2000

This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-l... more This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (TD) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed.

High-frequency scalable compact modelling of Si RF-CMOS technology

physica status solidi (c), 2008

1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, ... more 1 National Technical University of Athens, 15780 Athens, Greece 2 Technical University of Crete, 73100 Chania, Greece 3 FPL, Semiconductor Physics Institute, 01108 Vilnius, Lithuania 4 Technical University of Dresden, 01069 Dresden, Germany 5 ECE Department, ...

IEEE Journal of Microwaves, 2021

This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which... more This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented. INDEX TERMS Heterojunction bipolar transistors (HBTs), high-frequency measurements, millimeter wave, SiGe, technologies, terahertz, modeling, wireless communication systems, high-speed optical transmission system.

Low Power Ultra-Wide Band LNA Based on Active Impedance Matching Technique for UWB Wireless Communication

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016

A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on ac... more A two stage ultra-wideband low noise amplifier (LNA) MMIC was designed and fabricated based on active impedance matching technique and SiGe BiCMOS technology. The measured performance featuring transducer gain of 10.2 dB, noise figure below 4.7 dB, -3 dB bandwidth of 50 GHz and 8.06 mW DC power consumption, yields by far the best figure of merit (FOM) reported up to date. The proposed LNA exhibits a great degree of design simplicity and requires a total chip area of only 0.16 mm2.

Nonlinear Analysis: Modelling and Control, 1998

Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced ... more Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.

Microelectronics Reliability, 2004

Noise properties of Low-Power Si MOSFETs through different channel engineering

… WSL (IMS/RFIC)- …, 2009

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Analysis of the frequency dependent gate capacitance in CNTFETs

Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequenc... more Abstract-A time-dependent effective-mass Schrödinger-Poisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the carriers. The impact of Schottky-barriers on the escape time is discussed both analytically and by means of transient simulations. A comparison with experimental data reveals an interesting qualitative similarity. Index Terms-CNTFET, ballistic transport, high-frequency behavior, gate capacitance, double barrier structure, non-quasistatic phenomena, escape time

LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption

IEEE Transactions on Microwave Theory and Techniques, 2021

A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featur... more A 190-GHz mixer-based down-conversion receiver realized in a 130-nm SiGe BiCMOS technology featuring high-speed heterojunction bipolar transistors (HBTs) with (<inline-formula> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$f_{\text {max}}$ </tex-math></inline-formula>) = (300, 500) GHz is presented. The core part of the receiver consists of a low-noise amplifier (LNA), an active tunable fundamental mixer, an intermediate frequency (IF) buffer amplifier (BA), and an active inverse balun. A wideband, high conversion gain (CG) local oscillator (LO) chain is integrated to make the receiver suitable for applications requiring tunable LO, which contains a multiplier with a multiplication factor of 12 (<inline-formula> <tex-math notation="LaTeX">$\times 12$ </tex-math></inline-formula>) and a driver amplifier. To explo...