Togo Kudo - Academia.edu (original) (raw)

Papers by Togo Kudo

arXiv (Cornell University), Jul 21, 2015

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments... more We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer-SOI2 beneath the BOX (Buried OXide) layer-in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by 60 Co γ-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100 Gy to 2 MGy.

Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu), 2010

Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu), 2013

We developed logic-reconfigurable VME boards with high flexibility. The board has two parts, a ba... more We developed logic-reconfigurable VME boards with high flexibility. The board has two parts, a base board and two I/O daughter boards. The base board has a fieldprogrammable gate array (FPGA) chip for the execution of user logic, such as a digital low-pass filter or the calculation of the center of a spot image. Users can install their logic into the FPGA via the VME bus. The I/O daughter boards are simple I/O modules such as analog inputs and outputs (AI/AOs) or digital inputs/outputs (DIOs). The data from the I/O board is sent to the base board and processed there. As the I/O module is separated physically, the user can customize the VME board by choosing I/O modules and does not need to develop the whole device. We have developed DIO, AI/AO and camera link interface modules [1] as I/O daughter boards. INTRODUCTION Software on a CPU and simple AI/AOs and DIOs enables us to build control systems with complex sequences, such as feedback routines. However, a fast sequence that requir...

Journal of Synchrotron Radiation, 2021

Ptychographic coherent diffraction imaging (CDI) allows the visualization of both the structure a... more Ptychographic coherent diffraction imaging (CDI) allows the visualization of both the structure and chemical state of materials on the nanoscale, and has been developed for use in the soft and hard X-ray regions. In this study, a ptychographic CDI system with pinhole or Fresnel zone-plate optics for use in the tender X-ray region (2–5 keV) was developed on beamline BL27SU at SPring-8, in which high-precision pinholes optimized for the tender energy range were used to obtain diffraction intensity patterns with a low background, and a temperature stabilization system was developed to reduce the drift of the sample position. A ptychography measurement of a 200 nm thick tantalum test chart was performed at an incident X-ray energy of 2.500 keV, and the phase image of the test chart was successfully reconstructed with approximately 50 nm resolution. As an application to practical materials, a sulfur polymer material was measured in the range of 2.465 to 2.500 keV including the sulfur K a...

Journal of Physics: Conference Series, 2016

A tapered undulator beamline BL36XU was constructed at SPring-8 to conduct structural and electro... more A tapered undulator beamline BL36XU was constructed at SPring-8 to conduct structural and electronic analysis of dynamic events on polymer electrolyte fuel cell (PEFC) cathode catalysts for the development of next-generation PEFCs. BL36XU provides various time and spatially resolved XAFS techniques in an energy range from 4.5 to 35 keV for investigating PEFCs under the operating conditions. In addition, we developed in-situ complementary measurement systems, such as in-situ time-resolved XAFS/XRD and ambient pressure HAXPES systems. This report describes the performance and present status of the BL36XU.

Review of Scientific Instruments, 2016

A new beam profile monitoring system for the small X-ray beam exiting from the SPring-8 front-end... more A new beam profile monitoring system for the small X-ray beam exiting from the SPring-8 front-end was developed and tested at BL13XU. This system is intended as a screen monitor and also as a position monitor even at beam currents of 100 mA by using photoluminescence of a chemical vapor deposition-grown diamond film. To cope with the challenge that the spatial distribution of the photoluminescence in the vertical direction is too flat to detect the beam centroid within a limited narrow aperture, a filter was installed that absorbs the fundamental harmonic concentrated in the beam center, which resulted in “de-flattening” of the vertical distribution. For the measurement, the filter crossed the photon beam vertically at high speed to withstand the intense heat flux of the undulator pink-beam. A transient thermal analysis, which can simulate the movement of the irradiation position with time, was conducted to determine the appropriate configuration and the required moving speed of the...

AIP Conference Proceedings, 2004

A measurement system for circular dichroism (CD) of soft X-ray absorption has been developed usin... more A measurement system for circular dichroism (CD) of soft X-ray absorption has been developed using helicity switching of circularly polarized radiation by twin helical undulators at BL25SU of SPring-8. Difference of horizontal spot positions between the negative- and positive-helicity light at the sample position is within +/-3mum. Measurement time for magnetic circular dichroism (MCD) of core absorption is shortened to

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001

AIP Conference Proceedings, 2004

High-speed and simultaneous photon beam diagnostic system using optical cables at SPring-8. [AIP ... more High-speed and simultaneous photon beam diagnostic system using optical cables at SPring-8. [AIP Conference Proceedings 705, 593 (2004)]. Hideki Aoyagi, Togo Kudo, Shukui Wu, Kazumichi Sato, Shigeki Sasaki, Hitoshi Tanaka, Tetsuya Ishikawa, Hideo Kitamura. Abstract. ...

IEEE Transactions on Nuclear Science, 2014

A high-speed experimental method to evaluate the X-ray radiation damage of a large number of tran... more A high-speed experimental method to evaluate the X-ray radiation damage of a large number of transistors has been developed. In this method, test-element groups (TEGs), including approximately 10,000 metal-oxide-semiconductor (MOS) transistors, were formed on a silicon-on-insulator (SOI) wafer and irradiated with X-rays using novel equipment. After irradiation, fuses on the wafer were cut to isolate each transistor, and the transistor characteristics were measured by an automatic probe station. This method can provide approximately 10,000 lines of I-V curves of the transistors under 31 irradiation dose conditions in 10 days. Radiation damages are known to largely depend on the bias voltage conditions of the devices. In this method, the TEGs are located apart from one another on the wafer; then, the X-ray doses and bias voltage can be controlled specifically by each TEG. Using this equipment, a large amount of experimental data can be effectively acquired. The statistical data analysis enables highly effective radiation-resistant semiconductor development and reliability examination.

SPIE Proceedings, 2007

ABSTRACT

SPIE Proceedings, 2003

ABSTRACT

Transactions of the Materials Research Society of Japan, 2009

An x-ray optics was proposed for dynamical diffraction measurements of a non-ideal crystal. It wa... more An x-ray optics was proposed for dynamical diffraction measurements of a non-ideal crystal. It was composed of a pair of channel-cut Si (004) crystals and a one-dimensional focusing lens system. Vertical angular divergence values were measured as FWHM s of ca. 1.3 arc secs for an incident photon energy of 12.4 keV during a rocking scan around the analyzer sapphire 0006 reflection when the second channel-cut crystal was fixed at five deviation angles. The experimental angular resolution deconvoluted is about 1.3 arc secs at the deviation angle of ca. 0.7 arc sec. A typical photon flux was around 10 9 photons /s as a peak value of the rocking scan for an incident slit of 0.2 x 0.1 mm. The horizontal beam size measured at the focal distance of ca. 200 mm was 4.3 µm.

Review of Scientific Instruments, 2009

We developed a vacuum-compatible pulse selector for a free-electron laser. A rotating cylinder wi... more We developed a vacuum-compatible pulse selector for a free-electron laser. A rotating cylinder with eight apertures in a vacuum is driven by a closed-loop stepping motor system through a magnetically coupled rotary feedthrough. A field programmable gate array is used to synchronize the cylinder rotation with a trigger signal of the accelerator at a maximum repetition rate of 60 Hz. We achieved to select specific pulses from a continuous pulse train of the SPring-8 Compact SASE Source.

Review of Scientific Instruments, 2006

Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical v... more Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739nm and a wideband structure extending from 550to700nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 103. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

Review of Scientific Instruments, 2012

We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-n... more We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (103–1011 photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 103–109 photons/pulse of ∼10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 107–1011 photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This syste...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001

Beamline interlock systems (BL-IS) in SPring-8 were constructed for respective beamlines in accor... more Beamline interlock systems (BL-IS) in SPring-8 were constructed for respective beamlines in accordance with their own components. The systems are based on same architecture. On the other hand when the electron beam deviates from the central region of the insertion device (ID), the generated light melts the downstream devices. In order to prevent it, The rfBPM interlock system was constructed. When the rfBPM interlock system detects deviation, it aborts the stored electron beam within 0.8ms.

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011

A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based ... more A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 mm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors. For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.

arXiv (Cornell University), Jul 21, 2015

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments... more We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer-SOI2 beneath the BOX (Buried OXide) layer-in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by 60 Co γ-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100 Gy to 2 MGy.

Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu), 2010

Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu), 2013

We developed logic-reconfigurable VME boards with high flexibility. The board has two parts, a ba... more We developed logic-reconfigurable VME boards with high flexibility. The board has two parts, a base board and two I/O daughter boards. The base board has a fieldprogrammable gate array (FPGA) chip for the execution of user logic, such as a digital low-pass filter or the calculation of the center of a spot image. Users can install their logic into the FPGA via the VME bus. The I/O daughter boards are simple I/O modules such as analog inputs and outputs (AI/AOs) or digital inputs/outputs (DIOs). The data from the I/O board is sent to the base board and processed there. As the I/O module is separated physically, the user can customize the VME board by choosing I/O modules and does not need to develop the whole device. We have developed DIO, AI/AO and camera link interface modules [1] as I/O daughter boards. INTRODUCTION Software on a CPU and simple AI/AOs and DIOs enables us to build control systems with complex sequences, such as feedback routines. However, a fast sequence that requir...

Journal of Synchrotron Radiation, 2021

Ptychographic coherent diffraction imaging (CDI) allows the visualization of both the structure a... more Ptychographic coherent diffraction imaging (CDI) allows the visualization of both the structure and chemical state of materials on the nanoscale, and has been developed for use in the soft and hard X-ray regions. In this study, a ptychographic CDI system with pinhole or Fresnel zone-plate optics for use in the tender X-ray region (2–5 keV) was developed on beamline BL27SU at SPring-8, in which high-precision pinholes optimized for the tender energy range were used to obtain diffraction intensity patterns with a low background, and a temperature stabilization system was developed to reduce the drift of the sample position. A ptychography measurement of a 200 nm thick tantalum test chart was performed at an incident X-ray energy of 2.500 keV, and the phase image of the test chart was successfully reconstructed with approximately 50 nm resolution. As an application to practical materials, a sulfur polymer material was measured in the range of 2.465 to 2.500 keV including the sulfur K a...

Journal of Physics: Conference Series, 2016

A tapered undulator beamline BL36XU was constructed at SPring-8 to conduct structural and electro... more A tapered undulator beamline BL36XU was constructed at SPring-8 to conduct structural and electronic analysis of dynamic events on polymer electrolyte fuel cell (PEFC) cathode catalysts for the development of next-generation PEFCs. BL36XU provides various time and spatially resolved XAFS techniques in an energy range from 4.5 to 35 keV for investigating PEFCs under the operating conditions. In addition, we developed in-situ complementary measurement systems, such as in-situ time-resolved XAFS/XRD and ambient pressure HAXPES systems. This report describes the performance and present status of the BL36XU.

Review of Scientific Instruments, 2016

A new beam profile monitoring system for the small X-ray beam exiting from the SPring-8 front-end... more A new beam profile monitoring system for the small X-ray beam exiting from the SPring-8 front-end was developed and tested at BL13XU. This system is intended as a screen monitor and also as a position monitor even at beam currents of 100 mA by using photoluminescence of a chemical vapor deposition-grown diamond film. To cope with the challenge that the spatial distribution of the photoluminescence in the vertical direction is too flat to detect the beam centroid within a limited narrow aperture, a filter was installed that absorbs the fundamental harmonic concentrated in the beam center, which resulted in “de-flattening” of the vertical distribution. For the measurement, the filter crossed the photon beam vertically at high speed to withstand the intense heat flux of the undulator pink-beam. A transient thermal analysis, which can simulate the movement of the irradiation position with time, was conducted to determine the appropriate configuration and the required moving speed of the...

AIP Conference Proceedings, 2004

A measurement system for circular dichroism (CD) of soft X-ray absorption has been developed usin... more A measurement system for circular dichroism (CD) of soft X-ray absorption has been developed using helicity switching of circularly polarized radiation by twin helical undulators at BL25SU of SPring-8. Difference of horizontal spot positions between the negative- and positive-helicity light at the sample position is within +/-3mum. Measurement time for magnetic circular dichroism (MCD) of core absorption is shortened to

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001

AIP Conference Proceedings, 2004

High-speed and simultaneous photon beam diagnostic system using optical cables at SPring-8. [AIP ... more High-speed and simultaneous photon beam diagnostic system using optical cables at SPring-8. [AIP Conference Proceedings 705, 593 (2004)]. Hideki Aoyagi, Togo Kudo, Shukui Wu, Kazumichi Sato, Shigeki Sasaki, Hitoshi Tanaka, Tetsuya Ishikawa, Hideo Kitamura. Abstract. ...

IEEE Transactions on Nuclear Science, 2014

A high-speed experimental method to evaluate the X-ray radiation damage of a large number of tran... more A high-speed experimental method to evaluate the X-ray radiation damage of a large number of transistors has been developed. In this method, test-element groups (TEGs), including approximately 10,000 metal-oxide-semiconductor (MOS) transistors, were formed on a silicon-on-insulator (SOI) wafer and irradiated with X-rays using novel equipment. After irradiation, fuses on the wafer were cut to isolate each transistor, and the transistor characteristics were measured by an automatic probe station. This method can provide approximately 10,000 lines of I-V curves of the transistors under 31 irradiation dose conditions in 10 days. Radiation damages are known to largely depend on the bias voltage conditions of the devices. In this method, the TEGs are located apart from one another on the wafer; then, the X-ray doses and bias voltage can be controlled specifically by each TEG. Using this equipment, a large amount of experimental data can be effectively acquired. The statistical data analysis enables highly effective radiation-resistant semiconductor development and reliability examination.

SPIE Proceedings, 2007

ABSTRACT

SPIE Proceedings, 2003

ABSTRACT

Transactions of the Materials Research Society of Japan, 2009

An x-ray optics was proposed for dynamical diffraction measurements of a non-ideal crystal. It wa... more An x-ray optics was proposed for dynamical diffraction measurements of a non-ideal crystal. It was composed of a pair of channel-cut Si (004) crystals and a one-dimensional focusing lens system. Vertical angular divergence values were measured as FWHM s of ca. 1.3 arc secs for an incident photon energy of 12.4 keV during a rocking scan around the analyzer sapphire 0006 reflection when the second channel-cut crystal was fixed at five deviation angles. The experimental angular resolution deconvoluted is about 1.3 arc secs at the deviation angle of ca. 0.7 arc sec. A typical photon flux was around 10 9 photons /s as a peak value of the rocking scan for an incident slit of 0.2 x 0.1 mm. The horizontal beam size measured at the focal distance of ca. 200 mm was 4.3 µm.

Review of Scientific Instruments, 2009

We developed a vacuum-compatible pulse selector for a free-electron laser. A rotating cylinder wi... more We developed a vacuum-compatible pulse selector for a free-electron laser. A rotating cylinder with eight apertures in a vacuum is driven by a closed-loop stepping motor system through a magnetically coupled rotary feedthrough. A field programmable gate array is used to synchronize the cylinder rotation with a trigger signal of the accelerator at a maximum repetition rate of 60 Hz. We achieved to select specific pulses from a continuous pulse train of the SPring-8 Compact SASE Source.

Review of Scientific Instruments, 2006

Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical v... more Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739nm and a wideband structure extending from 550to700nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 103. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

Review of Scientific Instruments, 2012

We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-n... more We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (103–1011 photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 103–109 photons/pulse of ∼10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 107–1011 photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This syste...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001

Beamline interlock systems (BL-IS) in SPring-8 were constructed for respective beamlines in accor... more Beamline interlock systems (BL-IS) in SPring-8 were constructed for respective beamlines in accordance with their own components. The systems are based on same architecture. On the other hand when the electron beam deviates from the central region of the insertion device (ID), the generated light melts the downstream devices. In order to prevent it, The rfBPM interlock system was constructed. When the rfBPM interlock system detects deviation, it aborts the stored electron beam within 0.8ms.

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011

A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based ... more A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 mm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors. For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.