Yinggang Li - Academia.edu (original) (raw)

Papers by Yinggang Li

Research paper thumbnail of A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology

IEEE Microwave and Wireless Components Letters, 2012

A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial he... more A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.

Research paper thumbnail of A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017

This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Ball Gri... more This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Ball Grid Array (eWLB) commercial process. The transition is realized through a patch slot antenna directly radiating to a standard waveguide opening. The interconnect achieves low insertion loss and good bandwidth. The measured minimum Insertion Loss (IL) is 2 dB and the average is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. In addition, the structure is easy to integrate as it does not require any special assembly nor any galvanic contacts. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz.

Research paper thumbnail of Realizing a 140 GHz Gap Waveguide–Based Array Antenna by Low-Cost Injection Molding and Micromachining

Journal of Infrared, Millimeter, and Terahertz Waves, 2021

This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on... more This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on gap waveguide technology to be used in the next-generation backhauling links. The 140 GHz planar array antenna consists of three layers, all of which have been fabricated using polymer-based microfabrication and injection molding. The 140 GHz antenna has the potential to be used as an element in a bigger 3D array in a line-of-sight (LOS) multiple input multiple output (MIMO) configuration to boost the network capacity. In this work, we focus on the fabrication of a single antenna array element based on gap waveguide technology. Depending on the complexity of each antenna layer’s design, three different micromachining techniques, SU8 fabrication, polydimethylsiloxane (PDMS) molding, and injection molding of the polymer (OSTEMER), together with gold (Au) coating, have been utilized to fabricate a single 140 GHz planar array antenna. The input reflection coefficient was measured to be belo...

Research paper thumbnail of Fixed Wireless Communication Links Beyond 100 GHZ

2018 Asia-Pacific Microwave Conference (APMC), 2018

This contribution focuses on the spectrum above 92 GHz allocated for fixed wireless links and giv... more This contribution focuses on the spectrum above 92 GHz allocated for fixed wireless links and gives an overview on the FCC Spectrum Horizon, the use cases, and the technical challenges that are faced in implementing commercial products in the beyond 100 GHz bands. Initial industrial efforts spent on commercializing these bands are briefly reported.

Research paper thumbnail of An Ultra Low-Loss Silicon-Micromachined Waveguide Filter for D-Band Telecommunication Applications

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018

A very low-loss micromachined waveguide bandpass filter for use in D-band (110-170 GHz) telecommu... more A very low-loss micromachined waveguide bandpass filter for use in D-band (110-170 GHz) telecommunication applications is presented. The 134-146 GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom splitblocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008-0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4 %), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85 % of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600.

Research paper thumbnail of Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

IEEE Transactions on Terahertz Science and Technology, 2019

This is the accepted version of a paper published in IEEE Transactions on Terahertz Science and T... more This is the accepted version of a paper published in IEEE Transactions on Terahertz Science and Technology. This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination.

Research paper thumbnail of A data-rate adaptable modem solution for millimeter-wave wireless fronthaul networks

2015 IEEE International Conference on Communication Workshop (ICCW), 2015

Higher capacity backhaul/fronthaul links ICC'15-Workshops 03: IEEE ICC 2015-Workshop on Small Cel... more Higher capacity backhaul/fronthaul links ICC'15-Workshops 03: IEEE ICC 2015-Workshop on Small Cell and 5G Networks (SmallNets) Modeling and performance analysis Flexible Duplexing Techniques and User Association

Research paper thumbnail of Transition from one- to two-dimensional island growth on metal (110) surfaces induced by anisotropic corner rounding

Physical Review B, 1997

We propose a kinetic model to describe the temperature dependence of the shape of islands formed ... more We propose a kinetic model to describe the temperature dependence of the shape of islands formed during submonolayer epitaxy on anisotropic metal surfaces. Our model reveals that "anisotropic corner rounding" is the key atomic process responsible for a transition in island shape, from chain structures at lower temperatures, to compact islands at higher temperatures. Exploiting data for the temperature and flux scaling of the island density, we analyze such behavior observed experimentally in Cu/Pd(110) epitaxy, estimating activation barriers of 0.45 and 0.3 eV for anisotropic terrace diffusion, and 0.65 eV for the slow cornerrounding process. Disciplines Chemistry | Mathematics Comments

Research paper thumbnail of A Simple DBPSK Modem Based on High-Speed Logical Gates for a 70/80 GHz GbE Microwave Link

2010 IEEE 71st Vehicular Technology Conference, 2010

Abstract A simple DBPSK modulator and demodulator based on high-speed logical gates is implemente... more Abstract A simple DBPSK modulator and demodulator based on high-speed logical gates is implemented. The modulator and demodulator is verified in a GbE microwave link for the 70/80 GHz band. Performance is evaluated back-to-back and in an outdoor hop over 1 km ...

Research paper thumbnail of Transmission solutions and architectures for heterogeneous networks built as C-RANs

7th International Conference on Communications and Networking in China, 2012

A novel end-to-end transport network solution is proposed to meet the operational and technical c... more A novel end-to-end transport network solution is proposed to meet the operational and technical challenges of heterogeneous networks built as C-RANs with centralized base band processing and CPRI links. The flexibility of the proposed architecture to support distributed architectures and Ethernet links is also described and the results of a C-RAN proof of concept demonstration are discussed. Substantiated by the evolution of key optical technologies, including a novel WDM-PON based solution, we conclude that backhaul and metro network strategies need to flexibly support both centralized and distributed radio baseband solutions, as well as being multiservice capable. Additionally, as a complement to fiber, we propose use of the 70/80 GHz frequency band (E-band) to provide high performance microwave links for both centralized and distributed architectures.

Research paper thumbnail of IMS 2019: "High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps" presentation

More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products... more More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products were part of last IMS Microwave Week conference. In fact, IMS Microwave Week is the world's largest conference of Radio Frequency (RF), which is the most essential forum for the latest research developments and practices in the field. There microwave experts gathered together and shared their innovative thoughts and ideas. During the <strong>IMS Microwave Week</strong> held on 2-7 June 2019 in Boston, Dr.Yinggang Li, Jonas Hansryd and Mikael Hörberg from Ericsson, as representatives of the Car2TERA project- the M3TERA project continuation, presented with the topic of "<strong>High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps</strong>". IMS Microwave Week consisted of three related conferences including technical sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhib...

Research paper thumbnail of D-band SiGe transceiver modules based on silicon-micromachined integration

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chips... more This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10−11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.

Research paper thumbnail of A 17 to 26 GHz micromixer in SiGe BiCMOS technology

Wereport, for the first time, our experimental results of a high frequency Micromixer operating f... more Wereport, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved:typically 0 dBm input-referred P-1dB and 8 dBm IIP3.The conversion gain and double side band noise figureat23GHzRFinput are –3.6 dB and 18.2 dB, respectively.The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer isalso implanted on the same wafer.The experimental results are compared for the two active mixers.

Research paper thumbnail of A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition Using 130nm SiGe BiCMOS Process

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology wit... more This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with ft/fmaxf_t/f_{max}ft/fmax values of 250 GHzI 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110–147 GHz, while the amplifier operates between 115–155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is mathbf3mmtimes0.73mm\mathbf{3\ mm \times 0.73 \ mm}mathbf3mmtimes0.73mm including chip-to-waveguide transition. The transmitter gives −4 dBm output power at 140 GHz and can operate between 129–148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

Research paper thumbnail of Integration of a 140 GHz Packaged LTCC Grid Array Antenna With an InP Detector

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015

ABSTRACT

Research paper thumbnail of Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084), 2000

One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufact... more One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;#x27;s 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1×1 mm2

Research paper thumbnail of A high frequency low phase-noise signal source generated using a self-oscillating mixer

A 21 GHz signal source is obtained from a 4 GHz voltage-controlled oscillator (VCO) using an inte... more A 21 GHz signal source is obtained from a 4 GHz voltage-controlled oscillator (VCO) using an integrated self-oscillating mixer which, in essence, contains a fixed frequency oscillator (FFO) and a mixer. The phase noise for the up-converted signal is about 5 dB worse than for the 4 GHz VCO, much less than the expected 14.7 dB degradation if a frequency multiplier would be used. The focus of the present work, however, is not on design optimization of the overall signal source performance, but rather to demonstrate how practical the proposed up-conversion method is in generation of low phase noise sources at high frequencies. This is experimentally done by manipulating the phase noise of the FFO using the so called self-injection lock technique.

Research paper thumbnail of Potential energy barriers for interlayer mass transport in homoepitaxial growth on fcc(111) surfaces: Pt and Ag

Surface Science, 1994

ABSTRACT The efficiency of interlayer mass transport determines the growth mode and film quality ... more ABSTRACT The efficiency of interlayer mass transport determines the growth mode and film quality in molecular beam epitaxy. In this paper we report potential energy barriers (PEB) to interlayer diffusion for Pt and Ag homoepitaxial growth on fcc (111) surfaces, as calculated using the corrected effective medium theory. Various island structures were considered. The island sizes ranged from 3- to about 60-atom islands and to various steps (“infinite” large islands). We found that jumping directly over the island edge has a much higher PEB than does the so-called displacement-exchange mechanism. Exchange at edges with kink sites also had a higher or comparable PEB to those at the straight (perfect) edges, contrary to previous speculations [M. Henzler, T. Schmidt and E.Z. Luo, in: The Structure of Surfaces IV (World Scientific, Signapore, 1994)]. The PEB depended strongly on the local atomic arrangement but was insensitive to the global island size and shape as long as the island edges were at least five atoms long. For the displacement-exchange process, the PEB did not decrease monotonically with decreasing island size over the entire island size range. For very small islands of less than ten atoms the PEB increased abruptly by an order of magnitude. This qualitative behavior was exhibited by both Pt and Ag systems but the two differed quantitatively for island sizes above ten atoms. We discuss the relevance of these results to the experimental observations, i.e., the reentrant growth in Pt [R. Kunkel, B. Poelsema, L.K. Verheij and G. Comsa, Phys. Rev. Lett. 65 (1990) 733], layer-by-layer growth in Ag induced by surfactant [H.A. van der Vegt, H.M. van Pinxteren, M. Lohmerier and E. Vlieg, Phys. Rev. Lett. 68 (1992) 3335] or by high-density of islands [G. Rosenfeld, R. Servaty, C. Teichert, B. Poelsema and G. Comsa, Phys. Rev. Lett. 71 (1993) 895 ], as well as the different growth behaviors found in the two systems.

Research paper thumbnail of Step-facilitated dissociation of small metal clusters: A molecular-dynamics study

Physical Review B, 1994

The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dy... more The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dynamics simulations using the corrected effective-medium theory. It was found that interlayer diffusion of the clusters proceeds via dissociation and consecutive single-atom exchanges with the edge atoms, rather than hopping over the edge as a unit. The dissociation and the exchanges occur in a coherent way. We therefore propose that surface defects, like steps or large vacancy pits, may facilitate cluster dissociation via incorporation of the cluster atoms into the edges.

Research paper thumbnail of A 31∼61 GHz linear transconductance up-conversion mixer with 15 GHz IF-bandwidth

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013

A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in ... more A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0.25 μm InP DHBT technology, which consists of a main and an auxiliary mixer. At large input power, the conversion gain compression of the main mixer is compensated by the gain expansion of the auxiliary mixer; consequently, the linearity of the combined two mixers is improved. The measured output referred 1-dB compression point, OP1dB, is -2.2 dBm to -0.57 dBm in the frequency range, which to the authors' knowledge, is the best obtained among the up-conversion mixers published so far. Moreover, the mixer also demonstrates a broad IF bandwidth of 0~15 GHz, supporting up-conversion of high datarate baseband signals.

Research paper thumbnail of A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology

IEEE Microwave and Wireless Components Letters, 2012

A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial he... more A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.

Research paper thumbnail of A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017

This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Ball Gri... more This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Ball Grid Array (eWLB) commercial process. The transition is realized through a patch slot antenna directly radiating to a standard waveguide opening. The interconnect achieves low insertion loss and good bandwidth. The measured minimum Insertion Loss (IL) is 2 dB and the average is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. In addition, the structure is easy to integrate as it does not require any special assembly nor any galvanic contacts. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz.

Research paper thumbnail of Realizing a 140 GHz Gap Waveguide–Based Array Antenna by Low-Cost Injection Molding and Micromachining

Journal of Infrared, Millimeter, and Terahertz Waves, 2021

This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on... more This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on gap waveguide technology to be used in the next-generation backhauling links. The 140 GHz planar array antenna consists of three layers, all of which have been fabricated using polymer-based microfabrication and injection molding. The 140 GHz antenna has the potential to be used as an element in a bigger 3D array in a line-of-sight (LOS) multiple input multiple output (MIMO) configuration to boost the network capacity. In this work, we focus on the fabrication of a single antenna array element based on gap waveguide technology. Depending on the complexity of each antenna layer’s design, three different micromachining techniques, SU8 fabrication, polydimethylsiloxane (PDMS) molding, and injection molding of the polymer (OSTEMER), together with gold (Au) coating, have been utilized to fabricate a single 140 GHz planar array antenna. The input reflection coefficient was measured to be belo...

Research paper thumbnail of Fixed Wireless Communication Links Beyond 100 GHZ

2018 Asia-Pacific Microwave Conference (APMC), 2018

This contribution focuses on the spectrum above 92 GHz allocated for fixed wireless links and giv... more This contribution focuses on the spectrum above 92 GHz allocated for fixed wireless links and gives an overview on the FCC Spectrum Horizon, the use cases, and the technical challenges that are faced in implementing commercial products in the beyond 100 GHz bands. Initial industrial efforts spent on commercializing these bands are briefly reported.

Research paper thumbnail of An Ultra Low-Loss Silicon-Micromachined Waveguide Filter for D-Band Telecommunication Applications

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018

A very low-loss micromachined waveguide bandpass filter for use in D-band (110-170 GHz) telecommu... more A very low-loss micromachined waveguide bandpass filter for use in D-band (110-170 GHz) telecommunication applications is presented. The 134-146 GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom splitblocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008-0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4 %), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85 % of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600.

Research paper thumbnail of Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

IEEE Transactions on Terahertz Science and Technology, 2019

This is the accepted version of a paper published in IEEE Transactions on Terahertz Science and T... more This is the accepted version of a paper published in IEEE Transactions on Terahertz Science and Technology. This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination.

Research paper thumbnail of A data-rate adaptable modem solution for millimeter-wave wireless fronthaul networks

2015 IEEE International Conference on Communication Workshop (ICCW), 2015

Higher capacity backhaul/fronthaul links ICC'15-Workshops 03: IEEE ICC 2015-Workshop on Small Cel... more Higher capacity backhaul/fronthaul links ICC'15-Workshops 03: IEEE ICC 2015-Workshop on Small Cell and 5G Networks (SmallNets) Modeling and performance analysis Flexible Duplexing Techniques and User Association

Research paper thumbnail of Transition from one- to two-dimensional island growth on metal (110) surfaces induced by anisotropic corner rounding

Physical Review B, 1997

We propose a kinetic model to describe the temperature dependence of the shape of islands formed ... more We propose a kinetic model to describe the temperature dependence of the shape of islands formed during submonolayer epitaxy on anisotropic metal surfaces. Our model reveals that "anisotropic corner rounding" is the key atomic process responsible for a transition in island shape, from chain structures at lower temperatures, to compact islands at higher temperatures. Exploiting data for the temperature and flux scaling of the island density, we analyze such behavior observed experimentally in Cu/Pd(110) epitaxy, estimating activation barriers of 0.45 and 0.3 eV for anisotropic terrace diffusion, and 0.65 eV for the slow cornerrounding process. Disciplines Chemistry | Mathematics Comments

Research paper thumbnail of A Simple DBPSK Modem Based on High-Speed Logical Gates for a 70/80 GHz GbE Microwave Link

2010 IEEE 71st Vehicular Technology Conference, 2010

Abstract A simple DBPSK modulator and demodulator based on high-speed logical gates is implemente... more Abstract A simple DBPSK modulator and demodulator based on high-speed logical gates is implemented. The modulator and demodulator is verified in a GbE microwave link for the 70/80 GHz band. Performance is evaluated back-to-back and in an outdoor hop over 1 km ...

Research paper thumbnail of Transmission solutions and architectures for heterogeneous networks built as C-RANs

7th International Conference on Communications and Networking in China, 2012

A novel end-to-end transport network solution is proposed to meet the operational and technical c... more A novel end-to-end transport network solution is proposed to meet the operational and technical challenges of heterogeneous networks built as C-RANs with centralized base band processing and CPRI links. The flexibility of the proposed architecture to support distributed architectures and Ethernet links is also described and the results of a C-RAN proof of concept demonstration are discussed. Substantiated by the evolution of key optical technologies, including a novel WDM-PON based solution, we conclude that backhaul and metro network strategies need to flexibly support both centralized and distributed radio baseband solutions, as well as being multiservice capable. Additionally, as a complement to fiber, we propose use of the 70/80 GHz frequency band (E-band) to provide high performance microwave links for both centralized and distributed architectures.

Research paper thumbnail of IMS 2019: "High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps" presentation

More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products... more More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products were part of last IMS Microwave Week conference. In fact, IMS Microwave Week is the world's largest conference of Radio Frequency (RF), which is the most essential forum for the latest research developments and practices in the field. There microwave experts gathered together and shared their innovative thoughts and ideas. During the <strong>IMS Microwave Week</strong> held on 2-7 June 2019 in Boston, Dr.Yinggang Li, Jonas Hansryd and Mikael Hörberg from Ericsson, as representatives of the Car2TERA project- the M3TERA project continuation, presented with the topic of "<strong>High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps</strong>". IMS Microwave Week consisted of three related conferences including technical sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhib...

Research paper thumbnail of D-band SiGe transceiver modules based on silicon-micromachined integration

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chips... more This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10−11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.

Research paper thumbnail of A 17 to 26 GHz micromixer in SiGe BiCMOS technology

Wereport, for the first time, our experimental results of a high frequency Micromixer operating f... more Wereport, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved:typically 0 dBm input-referred P-1dB and 8 dBm IIP3.The conversion gain and double side band noise figureat23GHzRFinput are –3.6 dB and 18.2 dB, respectively.The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer isalso implanted on the same wafer.The experimental results are compared for the two active mixers.

Research paper thumbnail of A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition Using 130nm SiGe BiCMOS Process

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology wit... more This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with ft/fmaxf_t/f_{max}ft/fmax values of 250 GHzI 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110–147 GHz, while the amplifier operates between 115–155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is mathbf3mmtimes0.73mm\mathbf{3\ mm \times 0.73 \ mm}mathbf3mmtimes0.73mm including chip-to-waveguide transition. The transmitter gives −4 dBm output power at 140 GHz and can operate between 129–148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

Research paper thumbnail of Integration of a 140 GHz Packaged LTCC Grid Array Antenna With an InP Detector

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015

ABSTRACT

Research paper thumbnail of Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084), 2000

One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufact... more One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;#x27;s 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1×1 mm2

Research paper thumbnail of A high frequency low phase-noise signal source generated using a self-oscillating mixer

A 21 GHz signal source is obtained from a 4 GHz voltage-controlled oscillator (VCO) using an inte... more A 21 GHz signal source is obtained from a 4 GHz voltage-controlled oscillator (VCO) using an integrated self-oscillating mixer which, in essence, contains a fixed frequency oscillator (FFO) and a mixer. The phase noise for the up-converted signal is about 5 dB worse than for the 4 GHz VCO, much less than the expected 14.7 dB degradation if a frequency multiplier would be used. The focus of the present work, however, is not on design optimization of the overall signal source performance, but rather to demonstrate how practical the proposed up-conversion method is in generation of low phase noise sources at high frequencies. This is experimentally done by manipulating the phase noise of the FFO using the so called self-injection lock technique.

Research paper thumbnail of Potential energy barriers for interlayer mass transport in homoepitaxial growth on fcc(111) surfaces: Pt and Ag

Surface Science, 1994

ABSTRACT The efficiency of interlayer mass transport determines the growth mode and film quality ... more ABSTRACT The efficiency of interlayer mass transport determines the growth mode and film quality in molecular beam epitaxy. In this paper we report potential energy barriers (PEB) to interlayer diffusion for Pt and Ag homoepitaxial growth on fcc (111) surfaces, as calculated using the corrected effective medium theory. Various island structures were considered. The island sizes ranged from 3- to about 60-atom islands and to various steps (“infinite” large islands). We found that jumping directly over the island edge has a much higher PEB than does the so-called displacement-exchange mechanism. Exchange at edges with kink sites also had a higher or comparable PEB to those at the straight (perfect) edges, contrary to previous speculations [M. Henzler, T. Schmidt and E.Z. Luo, in: The Structure of Surfaces IV (World Scientific, Signapore, 1994)]. The PEB depended strongly on the local atomic arrangement but was insensitive to the global island size and shape as long as the island edges were at least five atoms long. For the displacement-exchange process, the PEB did not decrease monotonically with decreasing island size over the entire island size range. For very small islands of less than ten atoms the PEB increased abruptly by an order of magnitude. This qualitative behavior was exhibited by both Pt and Ag systems but the two differed quantitatively for island sizes above ten atoms. We discuss the relevance of these results to the experimental observations, i.e., the reentrant growth in Pt [R. Kunkel, B. Poelsema, L.K. Verheij and G. Comsa, Phys. Rev. Lett. 65 (1990) 733], layer-by-layer growth in Ag induced by surfactant [H.A. van der Vegt, H.M. van Pinxteren, M. Lohmerier and E. Vlieg, Phys. Rev. Lett. 68 (1992) 3335] or by high-density of islands [G. Rosenfeld, R. Servaty, C. Teichert, B. Poelsema and G. Comsa, Phys. Rev. Lett. 71 (1993) 895 ], as well as the different growth behaviors found in the two systems.

Research paper thumbnail of Step-facilitated dissociation of small metal clusters: A molecular-dynamics study

Physical Review B, 1994

The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dy... more The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dynamics simulations using the corrected effective-medium theory. It was found that interlayer diffusion of the clusters proceeds via dissociation and consecutive single-atom exchanges with the edge atoms, rather than hopping over the edge as a unit. The dissociation and the exchanges occur in a coherent way. We therefore propose that surface defects, like steps or large vacancy pits, may facilitate cluster dissociation via incorporation of the cluster atoms into the edges.

Research paper thumbnail of A 31∼61 GHz linear transconductance up-conversion mixer with 15 GHz IF-bandwidth

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013

A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in ... more A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0.25 μm InP DHBT technology, which consists of a main and an auxiliary mixer. At large input power, the conversion gain compression of the main mixer is compensated by the gain expansion of the auxiliary mixer; consequently, the linearity of the combined two mixers is improved. The measured output referred 1-dB compression point, OP1dB, is -2.2 dBm to -0.57 dBm in the frequency range, which to the authors' knowledge, is the best obtained among the up-conversion mixers published so far. Moreover, the mixer also demonstrates a broad IF bandwidth of 0~15 GHz, supporting up-conversion of high datarate baseband signals.