azza anis - Academia.edu (original) (raw)
Related Authors
National Institute of Technology, Calicut
Uploads
Papers by azza anis
International Journal of Applied Information Systems, Sep 4, 2014
This paper presents the design of a high-performance dualband wireless capacitive pressure sensor... more This paper presents the design of a high-performance dualband wireless capacitive pressure sensor operating in harsh environment. The proposed design is composed of an absolute capacitive pressure sensor, pressure controlled oscillator (PCO), class-E power amplifier (PA) and an antenna. The sensor node collects and transmits the pressure variation in the term of frequency output wirelessly to a nearby base station. Simulation results show that the low frequency band can be tuned from 2.1 to 2.6 GHz while the high frequency band ranging from 4.6 to 5.1 GHz in a pressure range from 5 to 10 MPa with total output power from 16 to 14 dBm at 0.35µm CMOS technology.
Recent Advances in Engineering Mathematics and Physics
This paper presents the characterization and design of a capacitive pressure sensor with LC-based... more This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.
Silicon, 2019
This paper presents a unified two-dimensional (2D) threshold voltage model for lightly doped symm... more This paper presents a unified two-dimensional (2D) threshold voltage model for lightly doped symmetrical double-gate p-channel MOSFETs including quantum confinement effects and negative bias temperature instability (NBTI). The proposed model has been derived by solving the two-dimensional Poisson equation to obtain the NBTI potential model and the one-dimensional Schrödinger equation together with the 2D Poisson equation to obtain the quantum confinement model. The quantum expression was subsequently embedded in the NBTI solution to reach a unified model for both quantum confinement and NBTI. The model is simple and continuous, thereby ensuring compatibility for insertion in Verilog-A based device simulators. The effect of stress time on the degradation of the threshold voltage has been measured over a 10 year period. The accuracy of the model has been validated through comparisons with both 2D numerical simulations and experimental data. The results show matching within ±3% for channel lengths down to 7 nm and silicon thicknesses of 5 nm at 1 GHz operation after 10 years.
2011 Third International Conference on Computational Intelligence, Modelling & Simulation, 2011
ABSTRACT This paper presents an analytical and simulation solution for MEMS (Microelectromechanic... more ABSTRACT This paper presents an analytical and simulation solution for MEMS (Microelectromechanical Systems) capacitive pressure sensor operating in harsh environment. The proposed sensor consists of a circular SiC (Silicon Carbide) diaphragm suspended over sealed cavity on a Si (Silicon) substrate. SiC is selected in this work due to its excellent electrical stability, mechanical robustness and chemical inertness properties, which is very adequate for harsh environment. The design is based on the use of COMSOL multiphysics structural analysis to design and obtain analytical solution for a circular diaphragm deflection. The proposed sensor demonstrated diaphragm of 100 μm diameter with the gap depth 0.64 μm and the sensor exhibit a linear response with pressure load up to 3.5 MPa with maximum deflection up to 0.52 μm.
Silicon, 2019
Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much interest ... more Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much interest in nanoscale electronic based systems and sensor applications. In this work, the threshold voltage for the ultrathin lightly doped n-channel Si GAA NWFETs with magnetic field effect is investigated. The study begins by modeling the inversion charge density including confinement-effect in the channel cross-section of the device. Three-dimensional (3D) potential model including magnetic field interaction is studied in this work. Threshold voltage and short channel effects such as threshold voltage roll-off and drain induced barrier lowering are also analyzed at different channel lengths. The obtained analytical results have been verified with 3D COMSOL numerical simulation results. The impact of the external magnetic field is well observed in the energy dispersion relations. However, the magnetic field has no considerable effect on the threshold voltage neither the short channel behavior for the proposed Si GAA NWFET even with increasing the biasing values and at different device parameters.
International Journal of Applied Information Systems, Sep 4, 2014
This paper presents the design of a high-performance dualband wireless capacitive pressure sensor... more This paper presents the design of a high-performance dualband wireless capacitive pressure sensor operating in harsh environment. The proposed design is composed of an absolute capacitive pressure sensor, pressure controlled oscillator (PCO), class-E power amplifier (PA) and an antenna. The sensor node collects and transmits the pressure variation in the term of frequency output wirelessly to a nearby base station. Simulation results show that the low frequency band can be tuned from 2.1 to 2.6 GHz while the high frequency band ranging from 4.6 to 5.1 GHz in a pressure range from 5 to 10 MPa with total output power from 16 to 14 dBm at 0.35µm CMOS technology.
Recent Advances in Engineering Mathematics and Physics
This paper presents the characterization and design of a capacitive pressure sensor with LC-based... more This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.
Silicon, 2019
This paper presents a unified two-dimensional (2D) threshold voltage model for lightly doped symm... more This paper presents a unified two-dimensional (2D) threshold voltage model for lightly doped symmetrical double-gate p-channel MOSFETs including quantum confinement effects and negative bias temperature instability (NBTI). The proposed model has been derived by solving the two-dimensional Poisson equation to obtain the NBTI potential model and the one-dimensional Schrödinger equation together with the 2D Poisson equation to obtain the quantum confinement model. The quantum expression was subsequently embedded in the NBTI solution to reach a unified model for both quantum confinement and NBTI. The model is simple and continuous, thereby ensuring compatibility for insertion in Verilog-A based device simulators. The effect of stress time on the degradation of the threshold voltage has been measured over a 10 year period. The accuracy of the model has been validated through comparisons with both 2D numerical simulations and experimental data. The results show matching within ±3% for channel lengths down to 7 nm and silicon thicknesses of 5 nm at 1 GHz operation after 10 years.
2011 Third International Conference on Computational Intelligence, Modelling & Simulation, 2011
ABSTRACT This paper presents an analytical and simulation solution for MEMS (Microelectromechanic... more ABSTRACT This paper presents an analytical and simulation solution for MEMS (Microelectromechanical Systems) capacitive pressure sensor operating in harsh environment. The proposed sensor consists of a circular SiC (Silicon Carbide) diaphragm suspended over sealed cavity on a Si (Silicon) substrate. SiC is selected in this work due to its excellent electrical stability, mechanical robustness and chemical inertness properties, which is very adequate for harsh environment. The design is based on the use of COMSOL multiphysics structural analysis to design and obtain analytical solution for a circular diaphragm deflection. The proposed sensor demonstrated diaphragm of 100 μm diameter with the gap depth 0.64 μm and the sensor exhibit a linear response with pressure load up to 3.5 MPa with maximum deflection up to 0.52 μm.
Silicon, 2019
Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much interest ... more Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much interest in nanoscale electronic based systems and sensor applications. In this work, the threshold voltage for the ultrathin lightly doped n-channel Si GAA NWFETs with magnetic field effect is investigated. The study begins by modeling the inversion charge density including confinement-effect in the channel cross-section of the device. Three-dimensional (3D) potential model including magnetic field interaction is studied in this work. Threshold voltage and short channel effects such as threshold voltage roll-off and drain induced barrier lowering are also analyzed at different channel lengths. The obtained analytical results have been verified with 3D COMSOL numerical simulation results. The impact of the external magnetic field is well observed in the energy dispersion relations. However, the magnetic field has no considerable effect on the threshold voltage neither the short channel behavior for the proposed Si GAA NWFET even with increasing the biasing values and at different device parameters.