Khoubeib Ch | Fac. Sciences Monastir University (original) (raw)
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Lawrence Berkeley National Laboratory
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The dependence of carrier effective mass of GaN x As 1 − x , InN x P 1 − x , InN x As 1 − x , and... more The dependence of carrier effective mass of GaN x As 1 − x , InN x P 1 − x , InN x As 1 − x , and InN x Sb 1 − x alloys on nitrogen content is investigated using a 10-band k.p model. The electron effective mass m e ⁎ at the bottom of conduction band in GaN x As 1 − x and InN x P 1 − x exhibits a gradual increase as a function of N concentration in the range 0− 1% and a decrease of x value between 1 and 5%. However, the behavior of m e ⁎ in InN x As 1 − x and InN x Sb 1 − x shows a strong decrease in all studied x-range. Our results are compared to the available data reported in the literature. On the other hand, contrary to heavy-hole effective mass m hh ⁎ , the light-hole effective mass m lh ⁎ in all studied alloys is significantly affected by nitrogen states, which modify the non-parabolicity of the LH band. The modification of the carrier effective mass affects the transport properties of the III-N-V alloys.
We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band structures o... more We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V semiconductors causes a significant reduction in the band gap energy and an enhancement of the spin-orbit splitting energy. Further, the conduction and valence offsets between III-V-N/III-V-Bi were also investigated for different nitrogen and bismuth concentrations. For III-V-N/III-V-Bi heterojunctions, the strain-balanced criteria were under-taken by the zero stress analysis. The band alignment of strain-balanced GaAsN/GaAsBi, InPN/InPBi and InAsN/InAsBi is a type II. For InSbN/InSbBi heterostructure, the band lineup can be type I or II.
GaAsBi/GaAs nanostructure is successfully grown by metalorganic vapor phase epitaxy. The GaAsBi l... more GaAsBi/GaAs nanostructure is successfully grown by metalorganic vapor phase epitaxy. The GaAsBi layer grown on a rough GaAs buffer surface is investigated in order to succeed the formation of quantum dots (QDs) structures. Photoluminescence (PL) measurements show signals from all QDs up to the roomtemperature. The PL peak positions are nearly unchanged by varying measurement temperature, but relative intensity of some peaks has changed. In addition, the positions of these low temperature PL peaks slightly shift after annealing, although the QDs luminescence intensity has strongly affected. These results are considered to be related to the reduced size of the QDs and/or by Bi content changes in the QDs.
The dependence of carrier effective mass of GaN x As 1 − x , InN x P 1 − x , InN x As 1 − x , and... more The dependence of carrier effective mass of GaN x As 1 − x , InN x P 1 − x , InN x As 1 − x , and InN x Sb 1 − x alloys on nitrogen content is investigated using a 10-band k.p model. The electron effective mass m e ⁎ at the bottom of conduction band in GaN x As 1 − x and InN x P 1 − x exhibits a gradual increase as a function of N concentration in the range 0− 1% and a decrease of x value between 1 and 5%. However, the behavior of m e ⁎ in InN x As 1 − x and InN x Sb 1 − x shows a strong decrease in all studied x-range. Our results are compared to the available data reported in the literature. On the other hand, contrary to heavy-hole effective mass m hh ⁎ , the light-hole effective mass m lh ⁎ in all studied alloys is significantly affected by nitrogen states, which modify the non-parabolicity of the LH band. The modification of the carrier effective mass affects the transport properties of the III-N-V alloys.
We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band structures o... more We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V semiconductors causes a significant reduction in the band gap energy and an enhancement of the spin-orbit splitting energy. Further, the conduction and valence offsets between III-V-N/III-V-Bi were also investigated for different nitrogen and bismuth concentrations. For III-V-N/III-V-Bi heterojunctions, the strain-balanced criteria were under-taken by the zero stress analysis. The band alignment of strain-balanced GaAsN/GaAsBi, InPN/InPBi and InAsN/InAsBi is a type II. For InSbN/InSbBi heterostructure, the band lineup can be type I or II.
GaAsBi/GaAs nanostructure is successfully grown by metalorganic vapor phase epitaxy. The GaAsBi l... more GaAsBi/GaAs nanostructure is successfully grown by metalorganic vapor phase epitaxy. The GaAsBi layer grown on a rough GaAs buffer surface is investigated in order to succeed the formation of quantum dots (QDs) structures. Photoluminescence (PL) measurements show signals from all QDs up to the roomtemperature. The PL peak positions are nearly unchanged by varying measurement temperature, but relative intensity of some peaks has changed. In addition, the positions of these low temperature PL peaks slightly shift after annealing, although the QDs luminescence intensity has strongly affected. These results are considered to be related to the reduced size of the QDs and/or by Bi content changes in the QDs.