Ben Lee | National Central University (original) (raw)
Address: Taipei, Taipei, Taiwan
less
Uploads
Papers by Ben Lee
Applied Physics Letters, 1998
Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2... more Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 °C.
Applied Physics Letters, 1997
Si, Ge, SiC, and diamond samples were implanted with H 2 ϩ at 120-160 keV with 5.0 ϫ10 16 ions/cm... more Si, Ge, SiC, and diamond samples were implanted with H 2 ϩ at 120-160 keV with 5.0 ϫ10 16 ions/cm 2 ͑corresponding to 1.0ϫ10 17 H ϩ ions/cm 2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy.
Applied Physics Letters, 1999
When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-t... more When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-transfer process, a spongy damage layer with microvoids was formed on the transferred layer because of hydrogen blistering. The surface-to-volume ratio of the damage layer was greater than that of the layer where blistering did not occur. Therefore, the damage layer was selectively etched by an HF/H 2 O 2 mixture and completely removed ͑the etching rates of Si at 70°C for the bulk layer and damage layer were 0.45 and 13.8 nm/min, respectively͒. Consequently, a smooth, damage-free Si layer ͑root-mean-square roughness = 2.74 nm͒ was obtained.
Applied Physics Letters, 1998
Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2... more Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 °C.
Applied Physics Letters, 1997
Si, Ge, SiC, and diamond samples were implanted with H 2 ϩ at 120-160 keV with 5.0 ϫ10 16 ions/cm... more Si, Ge, SiC, and diamond samples were implanted with H 2 ϩ at 120-160 keV with 5.0 ϫ10 16 ions/cm 2 ͑corresponding to 1.0ϫ10 17 H ϩ ions/cm 2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy.
Applied Physics Letters, 1999
When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-t... more When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-transfer process, a spongy damage layer with microvoids was formed on the transferred layer because of hydrogen blistering. The surface-to-volume ratio of the damage layer was greater than that of the layer where blistering did not occur. Therefore, the damage layer was selectively etched by an HF/H 2 O 2 mixture and completely removed ͑the etching rates of Si at 70°C for the bulk layer and damage layer were 0.45 and 13.8 nm/min, respectively͒. Consequently, a smooth, damage-free Si layer ͑root-mean-square roughness = 2.74 nm͒ was obtained.