Proposal for an all-spin logic device with built-in memory - PubMed (original) (raw)
Proposal for an all-spin logic device with built-in memory
Behtash Behin-Aein et al. Nat Nanotechnol. 2010 Apr.
Abstract
The possible use of spin rather than charge as a state variable in devices for processing and storing information has been widely discussed, because it could allow low-power operation and might also have applications in quantum computing. However, spin-based experiments and proposals for logic applications typically use spin only as an internal variable, the terminal quantities for each individual logic gate still being charge-based. This requires repeated spin-to-charge conversion, using extra hardware that offsets any possible advantage. Here we propose a spintronic device that uses spin at every stage of its operation. Input and output information are represented by the magnetization of nanomagnets that communicate through spin-coherent channels. Based on simulations with an experimentally benchmarked model, we argue that the device is both feasible and shows the five essential characteristics for logic applications: concatenability, nonlinearity, feedback elimination, gain and a complete set of Boolean operations.
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References
- Nature. 2002 Apr 18;416(6882):713-6 - PubMed
- Science. 2005 Sep 9;309(5741):1688-92 - PubMed
- Nature. 2001 Mar 15;410(6826):345-8 - PubMed
- Phys Rev Lett. 1985 Oct 21;55(17):1790-1793 - PubMed
- Science. 2006 Jan 13;311(5758):205-8 - PubMed
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