Leonardo Lucci | Pontifícia Universidade Católica de São Paulo (original) (raw)

Papers by Leonardo Lucci

Research paper thumbnail of Quantitative assessment of mobility degradation by remote Coulomb scattering in ultra-thin oxide MOSFETs: measurements and simulations

IEEE International Electron Devices Meeting 2003

In this paper, we report measurements of electron effective mobility (μeff) in ultra-thin (UT) pu... more In this paper, we report measurements of electron effective mobility (μeff) in ultra-thin (UT) pure SiO2 bulk MOSFETs. A low substrate doping was intentionally used to better detect a possible μeff degradation at small Tox. New quantitative criteria were developed and used to obtain μeff measurements unaffected by either gate doping penetration or gate oxide leakage. Mobility simulations, based on

Research paper thumbnail of Comparative analysis of basic transport properties in the inversion layer of bulk and SOI MOSFETs: a Monte-Carlo study

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

Monte-Carlo simulator for the quasi-2D electron gas in the inversion layer of Bulk and SO1 MOSFET... more Monte-Carlo simulator for the quasi-2D electron gas in the inversion layer of Bulk and SO1 MOSFETs has been developed. The code has been used to validate the momentum-relaxationtime technique commonly used to evaluate the low field mobility, pointing out the importance of inter-subband transitions in SO1 devices. The high field transport properties in thin SO1 MOSFETs have been investigated, showing for the first time that surface roughness scattering could have a strong impact on the saturation velocity whose value is significantly lower than the value reported for bulk silicon and bulk MOSFETs. On the other hand, the high energy carrier distribution is only weakly influenced by carrier quantization.

Research paper thumbnail of Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

In this work, an original and computationally efficient analytical model for quantization in FD-S... more In this work, an original and computationally efficient analytical model for quantization in FD-SG devices is proposed. It accounts for the coupling between the two interfaces, and leads to a proper modeling of energy levels, and consequently of ballistic and quasi ballistic currents. Suitable to model the impact of subband engineering on performances in the quasi ballistic regime of transport, such a model may also be used to extract from experiments the "degree of ballisticity" of real devices. It has been validated by comparison with Poisson Schrodinger (PS) simulations and experiments

Research paper thumbnail of Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs

2006 International Electron Devices Meeting, 2006

This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of ... more This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility

Research paper thumbnail of Assessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET

2006 European Solid-State Device Research Conference, 2006

ABSTRACT

Research paper thumbnail of Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. T... more This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results

Research paper thumbnail of Plano de recuperação judicial com perdão de dívidas: o momento de incidência do PIS, da Cofins, do IRPJ e da CSLL

Economic Analysis of Law Review

Este artigo objetiva analisar o momento de incidência do PIS, da COFINS, do IRPJ e da CSLL sobre ... more Este artigo objetiva analisar o momento de incidência do PIS, da COFINS, do IRPJ e da CSLL sobre valores obtidos a partir do perdão de dívidas concedido em plano de recuperação judicial. Para tanto, considerará a aprovação do plano de recuperação judicial como negócio jurídico de novação de débitos sob cláusula resolutiva. A partir disso, concluirá que o momento de incidência desses tributos coincidirá com o momento em que for concedida a recuperação judicial e, consequentemente, aprovado o plano de recuperação pelo juiz.

Research paper thumbnail of Quantitative assessment of mobility degradation by remote Coulomb scattering in ultra-thin oxide MOSFETs: measurements and simulations

IEEE International Electron Devices Meeting 2003

In this paper, we report measurements of electron effective mobility (μeff) in ultra-thin (UT) pu... more In this paper, we report measurements of electron effective mobility (μeff) in ultra-thin (UT) pure SiO2 bulk MOSFETs. A low substrate doping was intentionally used to better detect a possible μeff degradation at small Tox. New quantitative criteria were developed and used to obtain μeff measurements unaffected by either gate doping penetration or gate oxide leakage. Mobility simulations, based on

Research paper thumbnail of Comparative analysis of basic transport properties in the inversion layer of bulk and SOI MOSFETs: a Monte-Carlo study

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

Monte-Carlo simulator for the quasi-2D electron gas in the inversion layer of Bulk and SO1 MOSFET... more Monte-Carlo simulator for the quasi-2D electron gas in the inversion layer of Bulk and SO1 MOSFETs has been developed. The code has been used to validate the momentum-relaxationtime technique commonly used to evaluate the low field mobility, pointing out the importance of inter-subband transitions in SO1 devices. The high field transport properties in thin SO1 MOSFETs have been investigated, showing for the first time that surface roughness scattering could have a strong impact on the saturation velocity whose value is significantly lower than the value reported for bulk silicon and bulk MOSFETs. On the other hand, the high energy carrier distribution is only weakly influenced by carrier quantization.

Research paper thumbnail of Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

In this work, an original and computationally efficient analytical model for quantization in FD-S... more In this work, an original and computationally efficient analytical model for quantization in FD-SG devices is proposed. It accounts for the coupling between the two interfaces, and leads to a proper modeling of energy levels, and consequently of ballistic and quasi ballistic currents. Suitable to model the impact of subband engineering on performances in the quasi ballistic regime of transport, such a model may also be used to extract from experiments the "degree of ballisticity" of real devices. It has been validated by comparison with Poisson Schrodinger (PS) simulations and experiments

Research paper thumbnail of Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs

2006 International Electron Devices Meeting, 2006

This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of ... more This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility

Research paper thumbnail of Assessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET

2006 European Solid-State Device Research Conference, 2006

ABSTRACT

Research paper thumbnail of Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. T... more This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results

Research paper thumbnail of Plano de recuperação judicial com perdão de dívidas: o momento de incidência do PIS, da Cofins, do IRPJ e da CSLL

Economic Analysis of Law Review

Este artigo objetiva analisar o momento de incidência do PIS, da COFINS, do IRPJ e da CSLL sobre ... more Este artigo objetiva analisar o momento de incidência do PIS, da COFINS, do IRPJ e da CSLL sobre valores obtidos a partir do perdão de dívidas concedido em plano de recuperação judicial. Para tanto, considerará a aprovação do plano de recuperação judicial como negócio jurídico de novação de débitos sob cláusula resolutiva. A partir disso, concluirá que o momento de incidência desses tributos coincidirá com o momento em que for concedida a recuperação judicial e, consequentemente, aprovado o plano de recuperação pelo juiz.