Jarosław Jureńczyk | Wrocław University of Technology (original) (raw)

Papers by Jarosław Jureńczyk

2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

IEEE Transactions on Electron Devices, Dec 1, 2016

1/f noise-dark current correlation of p-i-n InAs/ GaSb T2SL detectors was analyzed. Experiments i... more 1/f noise-dark current correlation of p-i-n InAs/ GaSb T2SL detectors was analyzed. Experiments include current and noise measurements versus voltage and temperature. Modeling was used to decompose dark current into its components and correlate them with the observed 1/f noise. As a result, the total 1/f noise at arbitrary bias and temperature can be expressed as a sum αsh(Ish)2 + αG-R(IG-R)2 + αtun(Itun)1. 1/f noise from diffusion current was not observed, probably due to a very small noise coefficient, which is less than αdiff <; 10-11. The generation-recombination (G-R) current has relatively small contribution to the total 1/f noise in the inspected samples, because its noise coefficient is αG-R = 2 × 10-8. The largest contribution to 1/f noise comes from the shunt current. The shunt current 1/f noise coefficient αsh is temperature independent and proportional to the shunt resistance, αsh ~ Rsh. Its value can be so high that shunt-originated 1/f noise is observed at high temperature region, in which current is limited by the G-R and diffusion components. At high reverse bias, tunneling currents introduce additional contribution to 1/f noise, which exhibits linear dependence on the tunneling current.

IEEE Transactions on Electron Devices, 2016

Elektronika : konstrukcje, technologie, zastosowania, 2016

Semiconductor Science and Technology, Apr 4, 2017

Doping of the absorption region is one of the most crucial aspects of narrow-bandgap semiconducto... more Doping of the absorption region is one of the most crucial aspects of narrow-bandgap semiconductor design of a photodiode, especially, if it is adjacent to the p-n junction area. It significantly impacts various dark current mechanisms and thus the overall performance of these devices. In this work, the influence of a Be doping placement in the absorption region of type-II InAs/GaSb superlattice-based homojunction photodiodes on their performance was investigated. The analysis of diffusion, generation-recombination, shunt and tunnelling dark current components in a wide range of temperatures was performed. Moreover, performance-limiting factors were considered as well as their impact on most important figures of merit of photodetectors was considered. The photodiodes with Be-doped InAs layers in absorption region achieved the best performance.

Infrared Physics & Technology, 2018

We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operat... more We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling. We investigate optically immersed, laterally operated photoconductors with a cutoff wavelength around 10 µm at an operating temperature of 200 K. The identification of a suitable superlattice composition, the growth of a linearly graded metamorphic buffer layer and the transfer of the device concept from GaSb to GaAs are motivated and described. We show that immersion lens technology even for non-doping optimized devices enables a peak spectral detectivity above 6 × 10 9 cm Hz 0.5 W −1 at 195 K, approaching the performance of commercially available HgCdTe-based photoconductors.

Thin Solid Films, 2014

The effect of (NH 4) 2 S-based chemical treatment on type-II InAs/GaSb superlattice has been inve... more The effect of (NH 4) 2 S-based chemical treatment on type-II InAs/GaSb superlattice has been investigated. X-ray photoelectron spectroscopy and spectroscopic ellipsometry together with the fractional derivative spectrum model have been used for surface and interface characterization. It has been shown that As 2 S 3 and In 2 S 3 compounds are created during 21% (NH 4) 2 S-based chemical treatment. Additionally, the reduction of leakage current of InAs/GaSb-based photodetectors has been observed. These results indicate that 21% (NH 4) 2 S chemical treatment seems to be a promising long term stable passivation method for InAs/GaSb superlattice-based photodetectors.

Journal of Electronic Materials

This paper presents the performance of an interband cascade long-wavelength infrared detector des... more This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p+/n+ superlattice tunneling junctions connecting adjacent stages. Detectivity of the multi-junction heterostructure detector exceeding 1010 cm Hz1/2/W was estimated at wavelength λ ~ 9 µm and T = 210 K and ~ 3 × 108 cm Hz1/2/W for T = 300 K, achieving a tenfold improvement in detectivity in comparison to a device without an immersion lens and 30-fold improvement in detectivity in comparison to the single-stage device.

18th Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2012

ABSTRACT For high-bit rate and long-haul receivers in optical telecommunication systems the avala... more ABSTRACT For high-bit rate and long-haul receivers in optical telecommunication systems the avalanche photodiodes are preferred since they offer an improvement of the receiver sensitivity by several decibels. Recently critical sensing and imaging applications stimulated development of modified avalanche photodiodes structures operating in 1.55 μm spectral range. For these devices speed is not further critical. Instead, very low current densities and low multiplication noises are the main requirements. The most advanced structure of avalanche photodiodes is known as Separate Absorption, Grading, Charge and Multiplication (SAGCM). In the present work the performance of uncooled InGaAs/InAlAs/InP avalanche photodiodes operating near 1.55 μm has been studied theoretically. Device modeling based on advanced drift - diffusion model with commercial Crosslight APSYS software has been performed. Conventional SAGCM avalanche photodiodes as well as devices with a relatively thick undepleted p-type InGaAs absorption region and thin InAlAs multiplication layer have been considered. This type of avalanche photodiodes enables to increase device quantum efficiency, reduce dark current and eliminate impact ionization processes within absorbing layer. Extensive calculations allowed for detailed analysis of individual regions of the device and determination of their influence on diode characteristics.

Solid-State Electronics, 2015

Development of telecommunication, medical imaging and measurement systems resulted in increasing ... more Development of telecommunication, medical imaging and measurement systems resulted in increasing demand for new generation of photodetectors, especially those with internal gain. An example of such device is Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiode. It achieves far greater sensitivity, faster response time and smaller dark current levels in comparison with conventional p-n or p-in avalanche photodiodes. Additionally, to improve parameters of the photodiode an integrated monolithic optics can be applied. In this work numerical analysis of selected regions in such avalanche photodiode operating at 1.55 lm wavelength was performed. Calculations were carried out using Silvaco's TCAD software. The influence of doping concentration, profile and layer thickness on device characteristics was investigated. The results of performed simulations were then compared with data obtained from the measurements of real avalanche photodiodes.

Journal of Applied Remote Sensing, 2014

The essential steps in simulations of modern separate absorption, grading, charge, and multiplica... more The essential steps in simulations of modern separate absorption, grading, charge, and multiplication avalanche photodiode and their results are discussed. All simulations were performed using two commercial technology computer-aided design type software packages, namely Silvaco ATLAS and Crosslight APSYS. Comparison between those two frameworks was made and differences between them were pointed out. Several examples of the influence of changes made in individual layers on overall device characteristics have been shown. Proper selection of models and their parameters as well as its significance on results has been illustrated. Additionally, default values of material parameters were revised and adequate values from the literature were entered. Simulated characteristics of optimized structure were compared with ones obtained from measurements of real devices (e.g., current-voltage curves). Finally, properties of crucial layers in the structure were discussed. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012

ABSTRACT Solar cells are very promising renewable resource. High efficiency of AIIIBV based solar... more ABSTRACT Solar cells are very promising renewable resource. High efficiency of AIIIBV based solar cells are achieved in multijunction constructions. The technology of these devices is very difficult due to the complex electrical and optical interactions between the different semiconductor layers. Usually, the individual subcells are interconnected via Esaki tunnel diodes. This work presents the technology and computer modelling of GaAs based tunnel diodes which will be applied in tandem GaAs/InGaAs solar cells. Designed structures were grown by atmospheric pressure metal organic vapour phase epitaxy. Simulation results as well as dopant profiles and measured DC I-U characteristics of the obtained tunnel diodes are presented and discussed.

Optical Engineering, 2018

Abstract. We investigate the high-operating temperature performance of InAsSb/AlSb heterostructur... more Abstract. We investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cutoff wavelengths near 5 μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (with n-type conductivity), and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer type. Generally, the p-type absorber provides higher values of current responsivity than the n-type absorber, but at the same time also higher values of dark current. The device with the nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D * of nonimmersed devices vary from 2 × 109 to 5 × 109 cm Hz1/2 W ? 1 at 230 K, which is easily achievable with a two-stage thermoelectric cooler. Optical immersion increases the detectivity up to 5 × 1010 cm Hz1/2 W ? 1.

Applied Sciences, 2022

In this paper, we report on the influence of molecular beam epitaxial (MBE) growth temperature on... more In this paper, we report on the influence of molecular beam epitaxial (MBE) growth temperature on the spectral response of the long-wavelength infrared radiation (LWIR), three-stage thermoelectrically (TE) cooled (T = 210, 230 K) InAs/InAsSb type-II superlattice (T2SL)-based detectors grown on the GaSb/GaAs buffer layers/substrates. Likewise, antimony (Sb) composition and the superlattice (SL) period could be used for spectral response selection. The presented results indicate that the growth temperature affects the 50% cut-off (λ50%cut-off) of the fabricated devices and could be used for operating wavelength tunning. Assuming constant Sb composition and T2SL period during MBE process, the growth temperature is presented to influence λ50%cut-off covering entire LWIR (e.g., temperature growth change within the range of 400–450 °C contributes to the λ50%cut-off ~ 11.6–8.3 μm estimated for operating temperature, T = 230 K). An increase in temperature growth makes a blueshift of the λ50...

Physics and Simulation of Optoelectronic Devices XXIX, 2021

The InAs/InAsSb superlattices are attractive materials for the replacement of both RoHS restricte... more The InAs/InAsSb superlattices are attractive materials for the replacement of both RoHS restricted bulk HgCdTe and strongly Shockley-Read (SR) generation limited InAs/GaSb superlattices. Two main factors limit the performance of InAs/InAsSb photodiodes: the rate of the SR processes, especially in the depletion region, which is the source of the large dark current and a short vertical diffusion length of charge carriers in superlattice absorbers which results in poor responsivity. In this paper, we report on the status of HOT LWIR detectors based on InAs/InAsSb superlattices at VIGO System S.A. The uncooled and Peltier cooled LWIR photoconductors are the most successful devices developed so far. The practical InAs/InAsSb SL-based photoconductors have been fabricated by MBE heteroepitaxial growth on buffered 3” wafers. The design of the devices, material composition and doping, has been optimized for operation at temperatures from 200 to 300 K at a spectral range up to 18 μm. Some of the detectors were supplied with immersion microlenses formed in the GaAs substrates. The devices were characterized by measurements of the spectral responsivity and frequency-dependent noise density. The measured spectral detectivities of the best SL devices were found to be close or better compared to the HgCdTe counterparts operating at the same conditions. The devices are now offered as commercial products. Vigo present efforts are focused on the development of HOT LWIR photodiodes including monolithic cascade devices and thin absorber devices with the plasmonic enhancement of absorption. The development roadmap of advanced HOT devices is also sketched.

Infrared Physics & Technology, 2019

We have demonstrated Si and Be doped InAs 1-x Sb x-based heterostructures (0.3 ≤ x ≤ 0.9) for LWI... more We have demonstrated Si and Be doped InAs 1-x Sb x-based heterostructures (0.3 ≤ x ≤ 0.9) for LWIR and VLWIR detection grown by molecular beam epitaxy on semi-insulating GaAs (001) substrates. Wet etching and electroplating were used to fabricate photoconductive and photovoltaic devices optimized for 50% cutoff wavelengths ranging from 8 to 16 µm at room temperature. Photoelectrical properties of the devices were studied. The devices based on minimum bandgap material were optimized for a high-frequency operation in a wide spectral range with response time down to 100 ps. Other devices doping level in the active layer was chosen to reach high room-temperature detectivity. Furthermore, the implementation of monolithic optical immersion has drastically improved the signal to noise ratio allowing uncooled or Peltier-cooled operation. Highlights  HOT LWIR and VLWIR InAsSb-based photodetectors were grown and characterized  Immersion lenses were fabricated from GaAs substrate to improve the performance  The devices exhibit down to picosecond-range response time  The performance of the devices is similar to MCT-based LWIR devices